Rectifiers - Компэл · PDF fileST’s rectifiers portfolio 2 15mA 2x120A 15V 150V...

Rectifiers

August 2013

Blank series

ST’s rectifiers portfolio 2

2x120A 15mA 15V

150V

100V

40/45V

30V

From 200 V to 1200 V

From 1 A to 200 A

STPSxx STTHxx

600V / 650V

200V

80V

High-performance

Low QRR

Low VF

Tandem

R series

L series

S series

LCD series

Mainstream

170V

60V

From wall adapters

1A to solar farms

200A

Avalanche-rated up

to 170V

120V

W series

Power Schottky

Signal Schottky Bipolar rectifiers

AC series

SiC diode current Gen. 2 voltage • Blank: single diode

• C: dual-diode with

common cathode

Package

STPSC bb H 065 bb bb

BATxx

Silicon Carbide (SiC) 650 V

4A, 6A, 8A, 10, 20A • STPSC4H065

• STPSC8H065

• STPSC10H065

• STPSC12H065

• STPSC20H065C

Silicon Carbide

www.st.com/diodes

Order code : SGDIODRECT0413

http://www.st.com/diodes

… and Our Drivers

Energy Saving

Space Savings

Environment

1 slide summary on Rectifiers 3

What: Our Edge Products

• Power Schottkys

• FERD: “the game changer”

• Super Power ISOTOP, TO3-P

• Gen 2Tandem 600V Hyperfast

• Gen 2 SiC 650V

Why: What is good

• Power Schottkys more power, more

robust

• Gen 2 SiC Highest peak power in SiC

• Gen 2 Tandem Like SiC at budget

• ISOTOP up to 200A for Welding

Help Needed?

www.st.com/diodes

Lighting

(CFL/LED)

Welding Solar

Automotive

UPS

Air Cond. SMPS

Where we are

Gen 2

Turbo2 TANDEM TANDEM

SiC

Lo

sse

s

attack “C”, “I”

“D” “V”

Selector Models System Boards

3

http://www.st.com/diodes

4

Low VF Reduced power losses and diode heats-up

High Tj to avoid thermal runaway phenomenon

Low IR as an evidence of Reliability and ruggness

Robust Inductive elements creates voltage spikes risk

Schottky Diodes advantages

Expanding LCD range in DPAK, up to 200V 5

TO-220FP

DPAK

TO-220

I²PAK

D²PAK

45

V

15 A

20 A

30 A

10 A

20 A

60

V

10 A

15 A

20 A

30 A

40 A

80

V

10 A

20 A

100

V

10 A

20 A

170

V

10 A

20 A

150

V

10 A

20 A

200

V

In mass production

In development

200V power Schottky diodes ext.

• Product range, all available

• High current: STPS60SM200CW

• Package: TO-247

• Output current: 2 x 30A

• Targeted applications: Telecom SMPS, welding equipments

• Medium current: STPS20200CT, STPS20200CTN, STPS20200CFP

• Packages: TO-220, TO-220NL, TO-220FPAB

• Output current: 2 x 10A

• Targeted applications: lighting, medium power SMPS

• Low current: STPS2200U, STPS2200UF, STPS2200AF

• Packages: SMB, SMB flat, SMA Flat

• Output current: 2A

• Targeted applications: lighting, DC/DC converters

6

7 New Welding devices series: “W series”

STTH Family (Ultrafast diodes)

Optimized

performance

Low price

Low Qrr

Low Vf

Tandem Series

« R » Series « L » Series

« S » Series

« LCD » Series « W » Series

For entry

level Welders

Part Numbers / New W series 8

STTH20W02CW

STTH200W03TV1

STTH60W03CW

STTH30W03CW

STTH60W02CW

STTH30W02CW

STTH61W04SW

STTH100W04CW

STTH200W04TV1

STTH50W06SW

STTH100W06CW

STTH200W06TV1

STTH50W03CW

Low VF Low QRR

High commutation perf

Multiple trade_offs

LCD series

L series R series

S series

Tandem series (600 V)

ST’600V Ultrafast diodes 9

AC series

STTHxxAC series target interleaved PFC in

air conditioning

600V diode

10

Requirements:

- Fast switch-off for CCM PFC

- Specific mechanical package for assy in « plastic frames »

Interleaved Boost

PFC

Tandem Generation 2

1 2

1

2

300 V diode 300 V diode

Two 300 V diodes in series make a faster 600 V diode.

TANDEMG2

STTH8T06DI (VF = 2.05V, QRR = 6nC) in mass-production

STTH8ST06DI (VF = 2.5V, QRR = 4nC) in mass-production

STTH12T06DI available for sampling in mass production

13

Tandem Generation 2

• Switching characteristics

IF=8A ; dI/dt=400A/µs ; VR=400V ; Tj=125°C

SiC G2: STPSC6H065D

Tandem G2: STTH8T06DI

Tandem G1: STTH806DTI

STTH8R06D

2A/div

10ns/div

New tandem G2

Up to 45% gain on QRR vs. tandem G1 !

TANDEM G2

14

Reverse recovery

comparison

Reverse recovery comparison

VR = 400 V, IF = 8 A, Tj = 125oC,dl/dt = -200 A/µs

Power loss comparison

400 W PFC, dI/dt = -200 A/µs, Tj = 125oC

W

0

1

2

3

4

5

6

7

Turbo2

“R”

TANDEM

G1

ST

SiC

Turbo 2, Tandem, SiC perf positioning

TANDEM

G2

Tandem G2

ST SiC

Tandem G1

STTH806DTI Silicon

ultrafast

15

600V / 650V SiC diodes

• SiC G2 technology: using JBS (Junction-Barrier Schottky) structure

EPITAXY

METAL

P+

Current flow

in normal

conditions

Current flow

in surge

conditions

Polymide

Metal Termination

Epitaxy

IF

VF

The addition of P+ implantation in the

schottky structure creates P/N

junctions.The surge forward current

capability can be increased while

keeping TJ < TJ(MAX)

Schottky

behaviour

Bipolar

behaviour

25°C

225°C

Clamping effect

Bipolar behaviour

600V / 650V SiC diodes

• Goal of SiC G2:

• Improve surge capability (IFSM)

• Give more margin on reverse voltage (VRRM)

New 650V SiC G2, better Ifsm

• Datasheet:

18

Improved surge capability

IFSM = 10 x IF(AV)

New voltage rating for

higher reverse safety

margin

New 650V SiC G2 19

Time

0A

20A

40A

60A

5ms 10ms 15ms 20ms 25ms 30ms120°C

160°C

200°C

240°C

215°CTj other 650V SiC JBS techno

TjSTPSC6H065

175°C

1000W PFC start-up Pspice simulation

90V, 70kHz, Cout = 600µF, L = 270µH, Tc = 125°C

STPSC6H065D lower VF enables to significantly reduce

the junction temperature during surge test .

• SiC G2 range

• 4A, 6A, 8A, 10, 20A:

• STPSC4H065 (TO-220AC, DPAK)

• STPSC6H065 (TO-220AC, DPAK, D²PAK)



• STPSC12H065 (TO-220AC, D²PAK)

• STPSC20H065C (TO-247, TO-220AB)

• Part-numbering:

STPSC xx H 065 y z

SiC diode current Gen. 2 voltage • Blank: single diode

• C: dual-diode with

common cathode

Package

20 New 650V SiC G2

1200V SiC diodes

• Key features

• 1200V Schottky rectifier for step up converter

• Robust high voltage periphery

• Ultrafast switching independant on the temperature

• Main benefits

• Higher efficiency & reduction of heatsink size

• Easy paralleling

• IEC 61000-4-5 & ANSI C 6241 (6kV, 2Ω) compliance

• IEC 60664-1 & UL 840 (Pollution degree II, material group, 1400V) compliance

Parameter value

VRRM min 1200V

IF(AV) 6A

VF(6A,25°C) typ. 1.65V

Cj (300V,25°C) typ. 29pF

STPSC6H12B

Mass-production in beg of Q3 2013

25

1200V SiC diodes

Parameters Conditions Value Unit

VRRM 1200 V

IF_AV δ = 0.5, TC = 125 °C 6 A

IFSM Half sine wave, tP = 10ms , Tc = 25°C 36

A Square wave, tP = 10µs , Tc = 25°C Ab.Val 100

TJ Maximum operating junction temperature 175 °C

VF IF = 6A & TJ = 25°C Typ. 1.65 V

VF IF = 6A & TJ = 25°C Max. 1.9 V

VF IF = 6A & TJ = 150°C Typ. 2.2 V

IR VR = VRRM , TJ = 25°C Max. 400 µA

IR VR = VRRM , TJ = 150°C Max. 1.5 mA

Qcj VR = 800V Typ. 29 nC

CJ

VR = 0V , Tc = 25°C , F = 1MHz Typ. 330 pF

VR = 300V , Tc = 25°C , F = 1MHz Typ. 29 pF

Rth(j-c) DPAK , Junction to case Typ. 1.3 °C/W

26

1200V SiC diodes

The DPAK HV

package is

system compliant

with the UL 840

or IEC 60664-1

until a Vrms=780V

for a pollution

degree 1

VV

peakVV

drms

ddrms

716

)( 2

Vd

Vin

t Vd

δ= 80%

800V

Extract of table 9.1 from UL840

A K

K A K

Compliant with pollution

degree 1 requirements

Application

example :

27

Field-Effect Rectifiers

• New family of rectifiers

• New patented technology from ST

• Main purpose: improve the efficiency of power-converters while not

impacting the thermal-margin in order to facilitate the design.

• Get a new price/performance positioning between Schottky and SR

28


• Technology positioning

Whatever the techno, the lower the VRRM, the better the VF / IR trade-off

VF

IR

VRR

M1

VRRM2 >

VRRM1

Schottky structured diode VF / IR

Same barrier

different die size

FERD techno VF / IR

VF

IR

VRR

M1

VRRM2 >

VRRM1

Same die size

Taylored process

29


In M/P

M/P in Q2 2013

30V

45V

60V

100V

FERD30M45C TO-220, D²PAK

FERD40M45C

TO-220, D²PAK

FERD40U45C

TO-220, D²PAK

FERD60U45C

TO-220, TO-247

FERD60M45C

TO-220, TO-247

FERD10U45 SMB flat e-pad

50V

FERD15S50 SMB flat e-pad

FERD8U60 SMB flat e-pad

FERD15S50 PowerFLAT 5 x 6

FERD30S50 PowerFLAT 5 x 6

8A 10A 30A 40A 60A 15A

In M/P

Samples Field-Effect Rectifiers

31


10.0E-6

100.0E-6

1.0E-3

10.0E-3

100.0E-3

1.0E+0

25 50 75 100 125 150

IR(typ)(mA)

Tj(°C)

IR = f(Tj)

0

2

4

6

8

10

12

14

16

18

20

0.1 0.2 0.3 0.4 0.5

IF(A)

VF(typ)(V)

IF = f(VF), without bonding

STPS30L45C

FERD30M45C

STPS30L45C

FERD30M45C

Tj=125°C

Tj=25°C

72mA

15mA

The best of the two worlds:

VF lower than STPS “L” series for good efficiency

IR lower than STPS “H” series for good thermal margin and easy design

Example: FERD30M45CT

32


• Datasheet benchmark examples

Parameter STPS3045CT STPS30L45CT FERD30M45CT

VFmax (15A, 25°C) 0.71 V 0.55 V 0.47 V

IRmax (VRRM,

125°C)

40 mA 200 mA 50 mA

RTH(j-c) 0.95 °C/W 0.85 °C/W 1.05 °C/W

Parameter STPS4045CT STPS41L45CT FERD40M45CT FERD40U45CT

VFmax (20A, 25°C) 0.76 V 0.53 V 0.48 V 0.47 V

IRmax (VRRM,

125°C)

40 mA 220 mA 50 mA 75 mA

RTH(j-c) 1.3 °C/W 0.8 °C/W TBD TBD

Parameter STPS6045CW (TO-247) STPS61L45CT FERD60M45CT FERD60U45CT

VFmax (30A, 25°C) 0.68 V 0.56 V 0.54 V 0.5 V

IRmax (VRRM,

125°C)

80 mA 400 mA 50 mA 75 mA

RTH(j-c) 0.55 °C/W 0.75 °C/W TBD TBD

The best of the two

worlds

33


• Application benchmark

34



4.0

4.5

5.0

5.5

6.0

6.5

7.0

7.5

8.0

30 40 50 60 70 80 90 100 110 120 130 140 150

P [ W ]

Tj [°C ]

FERD60U45CT − Typ

STPS40M60CT − Typ

• Temperature working point: 105°C measured on board for STPS40M60 at 150W

• Losses difference at 105°C: 1W

• Efficiency difference at 105°C: (1/150)×100=0.7%

A minimum of 0.7% efficiency

difference between

FERD60U45 & STPS40M60

is expected on this board.

1W Typical conduction +

reverse losses

comparison: Pout=150W

35



87.0

87.5

88.0

88.5

89.0

89.5

90.0

50 70 90 110 130 150

Effi

cie

ncy

[%

]

Load [W]

FERD60U45C

FERD40U45C

FERD30M45C

STPS40M60C

Difference: 0.91% Difference: 0.79%

Efficiency performance: FERD60U45C > FERD40U45C > FERD30M45C > STPS40M60C

Efficiency

Measurement: Vout =

11V, Pout = [50W to

150W], Vin = 115Vac,

Tamb = 25°C

36


• FER diodes for low-power chargers

Products: • 3A to 20A/45V Schottky & 8A to 30A

45V to 60V FERD

• SMD Flat packages, less than 1mm

Chargers Typical mapping:

Main applications: • DCM or QR flyback converters

Features: • Low VF

• Small form factor

• High forward surge capability

Benefits: • Help reaching high-efficiency standards

and high power density

Secondary rectification diode

current ratings

Chargers’ Output Power

SMB Flat

Exposed Pad

SMA Flat PowerFLATTM 6x5

5W 10W 12.5W

3A – 10A STPS3L45AF

FERD8U60UFE

FERD10U45UFE

10A to 15A FERD10U45FE

FERD15S50UFE

15A to 30A FERD15S50DJF

FERD30S50DJF

One output power and control charger, one diode

37


• Energy Star 6.0 for smart phones chargers coming in Q3 2013 Efficiency

60%

70%

80%

90%

0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4

Iout (A)

110V230V

Typical Efficiency = f(IOUT) on 10 W charger

100%

25%

50%

75%

Energy Star 5 min. average efficiency

Draft Energy Star 6 min. average efficiency

Energy savings standards such as Energy Star are pushing up

efficiency requirements on chargers

38


• Low-power chargers: typical flyback topology

DC VOUT = 5V

D

IOUT = 1A

to 2.5A

DCM

QR control Variable Fsw

RCD /

transil+ Diode

Active clamp

Diode choice DCM Controler QR control with valley detection

RCD network Transil + diode RCD network Active clamp

Voltage rating 45V to 60V 45V to 50V 40V to 50V 40V to 45V

<5W output 3A to 10A diodes

<10W output Up to 2 x 10A diodes in parallel

12.5W output Up to 30A diode rating

39


• Thermal considerations

A thermal pad can be used

on the diodes

Chargers are stuffy designs, where each component’s temperature influences other components.

Low profile packages enable power density increase and better convection cooling.

40


• Thermal considerations

Tj2 Tj1

PD1 PD2

Tc

PD2*Rthc PD1*Rthc

Tamb

Rthca

Rthjc Rthjc

Diode

Mosfet

MOS-FET & Diode are thermally coupled:

Optimization of one of the device benefit to the other one

41


• New technologies such as FERD bring significant improvements

compared to conventional Schottky-structured diodes.

• The use of flat packages (height < 1mm) becomes mandatory in the

chargers environment, to increase both power density, and the air

atmosphere surrounding the diode to improve convection cooling.

• An optimal choice of VRRM (as low as possible), I0, and package within

ST rectifiers gives designers the opportunity to comply with the most

stringent energy savings standards today applicable to smart phones

battery chargers.

42

Packages…

New TO-220 « narrow-leads » 44

1.2 0.65

1.25

0.3

Full insertion of the TO220 in the PCB possible,

To fit « low profile requirement”

1.7mm max

3.93mm

max

1.2mm max

2.9mm

max

Reduce the size of the lead-shoulders

Advantage

For adapters

New TO-220 « narrow-leads » 45

1.7mm max

3.93mm

max

1.2mm max

2.9mm

max

Complete insertion in the PCB

28 products in Mass-production (high runners in adapter business)

STPS40M120CTN STPS30L120CTN STPS20120CTN STPS30H100CTN STPS40M80CTN STPS30L60CTN

STPS40SM120CTN STPS30120CTN STPS40M100CTN STPS20SM100STN STPS30M80CTN STPS20L60CTN

STPS40120CTN STPS20M120STN STPS40SM100CTN STPS20H100CTN STPS40M60CTN STPS20LCD60CTN

STPS30M120STN STPS20SM120STN STPS30M100STN STPS20S100CTN STPS30M60STN

STPS30SM120STN STPS20L120CTN STPS30SM100STN STPS20LCD100CTN STPS30SM60STN

Focus on flat packages 46

PowerFLAT (6 x 5)

Low and medium power

High power

Footprint compatible with standard products

PowerFLAT (3.3 x 3.3)

Exposed PAD

ST flat packages less than 1mm height 47

New PowerFLAT™ 6 x 5 package 48

Current rating Voltage rating Part nbr 5x6x1

Po

we

r S

ch

ott

ky

15A 30V STPS15L30CDJFTR

30A 30V STPS30L30DJF-TR

30A 45V STPS3045DJF-TR

30A 60V STPS30M60DJF-TR

30A 100V STPS30M100DJF-TR

30A 100V STPS30H100DJF-TR



Ult

ra F

as

t 5A 600V STTH5R06DJF-TR

8A 300V STTH8R03DJF-TR

30A 200V STTH30R02DJF-TR

PowerFLATTM bring more current in high power density designs

Ultra-slim for ultra-

books

Solar µinverters

PowerFLAT™ 3.3 x 3.3 49

PowerFLAT 3.3 x 3.3

Current rating Voltage rating Part nbr 3.3²x1

5 30 STPS5L30CDEE

6 100 STPS6M100DEE

8 100 STPS8H100DEE

5 400 STTH5L04DEE

4 600 STTH4R06DEE

10 100 STPS10M100DEE

8 170 STPS8170DEE

10 45 STPS1045DEE

SMB flat with exposed-pad

Thickness: 1mm

Improved RTH(j-c)

thanks to exposed-

pad

Possibility to increase

the power density

thanks to a better

thermal dissipation

50

SMB Flat exposed Pad 51

For high power density applications

SMB flat with exposed-pad

ST’s SMB fLat exposed pad Competition

Smaller package (but fully footprint

compatible) than competitors.

52

STPS3L45AF 53

3A, 45V, SMA flat package

SMD flat packages 54

PART NUMBER FORWARD

CURRENT

REVERSE

VOLTAGE PACKAGE

STPS120MF 1 20 STMite Flat

STPS1H100MF 1 100 STMite Flat

STPS1L20MF 1 20 STMite Flat




STPS1H100AF 1 100 SMA Flat

STPS2150AF 2 150 SMA Flat

STPS2L30AF 2 30 SMA Flat

STPS2L40AF 2 40 SMA Flat

STPS2H100UF 2 100 SMB Flat

STPS2L25UF 2 25 SMB Flat




STPS3L45AF 3 45 SMA Flat in dev

STPS3150UF 3 150 SMB Flat



All in mass-

production,

3A/45V SMA flat

in development

Rectifier

New techno: FERD

processes

New substrate:

SiC

New ideas:

Tandem diodes,

Welding, air

conditioning PFC

New packages:

PowerFLAT, SMB Flat,

TO3PF

Conclusion 55

Rectifiers - Компэл · PDF fileST’s rectifiers portfolio 2 15mA 2x120A 15V 150V...

Documents

Transcript of Rectifiers - Компэл · PDF fileST’s rectifiers portfolio 2 15mA 2x120A 15V 150V...