Radiation effects on devices : Total Ionizing Dose...
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UNIVERSITE MONTPELLIER II
byJ. Gasiot
«Electronique et Rayonnement»Université de Montpellier II, FRANCE
CERN TrainingRadiation effects on electronic components and systems for LHC
Radiation effects on devices :Total Ionizing Dose, displacement effect, single event effect
Acknowledgments : Laurent Dusseau, G. Hubert, E. Lorfèvre. Many of the viewgraphs come from original works developed in our team.
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OUTLINE
• Introduction
• Radiation field & dosimetry
• Total ionizing dose
• Displacement
• Single event effect
• Conclusion
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Introduction
Radiation effects on electronic devices are observed :
Nuclear applicationscivil
high Dosegamma, electron, neutron
MilitaryDose and photocurrents in SCX-ray flash
Acceleratorshigh dose, displacement and single eventhadrons
Spacedose, displacement (LEO) and single eventheavy ions, electrons protons
Commercial LSI at ground levelsingle event neutron and material contamination
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Introduction
Radiation failure classification in devices :
Cumulative effects :Long term cumulative effect
Dose (TID, Total Ionizing Dose) and Dose rateIonization and trapping in insulators, bulk and interface
Displacement damage
Single Event Process (SEP)Short time response resulting from the energy transfer of a particleto the device.
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Introduction
24 %43 %
33 %
UnidentifiedAnomalies
OtherAnomalies
Radiation Induced Anomalies
Space anomalies
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1E+0 1E+1 1E+2 1E+3 1E+4 1E+5 1E+6 1E+7 1E+8
Tracker
Calorimeters
Muon Chambers
Cavern
Total Dose (rad/10 years)
Space
Comparison with space environment
Total Dose in Space and CMS
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1.E+05 1.E+07 1.E+09 1.E+11 1.E+13 1.E+15
Tracker
Calorimeters
Muon Chambers
Cavern
Charged Hadrons Flux (particles/cm2/10 years)
Protons in space
Protons in tracker
Pions in tracker
HCAL ECAL
Comparison with space environment
Charged Hadron Flux in space and CMS
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1E+07
1E+08
1E+09
1E+10
1E+11
1E+12
1E+13
1E+14
1E+15
1E+00 1E+01 1E+02 1E+03 1E+04
Energy (MeV)
E.d
ΦΦ/d
E (
1/cm
2/10
yea
rs)
Pions in CMS tracker
Protons in space
Protons in CMS tracker
Comparison with space environment
Charged Hadron Diff. Energy Spectrum
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OUTLINE
• Introduction
• Total ionizing dose
• Displacement
• Conclusion
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•Activity•Luminosity
Source Field Material
•Flux•Fluence•Stoppingpower
•Dose•Effect
Radiation field & dosimetry
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•ActivityUnit: Ci, Bq (s-1)1 Ci=3.7 1010 Bq (disintegrations . s-1)
•Luminosity fkS
NNL 21=
N1,N2 number of particlesS: Interaction surfacef: Collision frequencyR: Activity :cross section
LRi i∑= .σ
iσ
SourceSource
Radiation source
•Typical activity :Co60 radiotherapy k CiGeological sample 0.1 Bp/g
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Radiation field
• Φ Flux cm-2 s-1
• Ψ Fluence cm-2
Field
Typical values :- neutron at ground level : 0,1 cm-2 s-1 - protons in space, belts (E > 10 MeV) : 105 cm-2 s-1 - Electrons in space belts (E > 1 MeV) : 106 cm-2 s-1
- heavy ions in space (Geo, 10 years) : 106 cm-2
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Radiation field
For a charged particle beam, the average energy loss ischaracterized by (ICRU) :- Stopping power, S ( MeV/µµm): average energy loss per unit pathlength of a charged particle traversing a material - resulting from coulomb interactions with
- Electrons (Collision) Scol- Atomic nuclei (nuclear) Snuc
- Mass stopping power (1/ρρ) SThe energy may not be transferred in the surrounding path area.Nuclear reactions are not considered.
Field : particle energy loss
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Dosimetry
• Macroscopic : Dose
Gy (J.kg-1)
• Microscopic : LET,
NIEL
• Macroscopic :
- radiation protection Sv
- in Si e-h production
3.7 1015
e-h /Gy
• Microscopic : MeV g-1
LET : charge deposition around
the track
NIEL :energy transferred to recoil
atoms
Physical measurement Effect
Material
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Dosimetry
Dosimetry is concerned by the determination of the energy deposited in thearea of interest. As direct a measurement is most of the time impossible, a dosimeter is used.There are two levels- The physical characterization- The effect on a property of the considered. device :Measuring a dose at the first level on expect to obtain the second.Macroscopic physical data :The average energy deposited in a material per unit of mass at the point ofinterest is called Dose, Absorbed Dose, or Total Dose : - Gy (J.kg-1) (1 Gy = 100 rad )Macroscopic effect :In personal dosimetry the effect unit is the Sv (Sievert)1 Gy gamma is 1Sv1 Gy neutron or proton correspond to several Sv
Material : energy deposition
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Dosimetry
Material : energy deposition
Typical doses : Ground level, population : 0,5 rad/yearLethal dose : 4 Sv (4 Gy gamma whole body)Space mission 10 y : GEO 10 krad Constellation 100 kradNuclear reactors : D >> 1 MGy
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PARTICLE EFFICIENCY FOR TOTAL DOSE IN Si
Iron 104 max TID is closeProton 106
Electron 107
Photon 108
Neutron 109 long discussions
Even if this kind of data must be used with care, its aninteresting first response ( order of magnitude).
- Fluences (cm-2) that produces 1 Gy (TOTAL IONISATIONDOSE) in Silicon ( Particle energy : E = 14 MeV)
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Carrier densitycm-31010
Insulator
1022
Conductor
1015 1019
Semiconductor
Transient Phenomenon :Photo-currents
Permanent or semi-permanent Phenomenon :Displacements
Trapped charges + annealing
∆V = 3,6 d2 DC/Gy ~ 1015 cm-3
for d =100 nm and D=10 Krad ∆V=3,6 V
D, dosed, oxide thickness
Radiation Effects
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Dosimetry
LETdx
d=
Φ
ρ1
Material- Linear Energy transfer LET ( MeV.cm2. g-1) : Energy deposition related to Ionization along the particle path
- Non Ionizing Energy Loss NIEL ( MeV.cm2. g-1) : Energy deposition related to recoil atoms along the particle pathUsual parameter for displacement damage
Others convenient units are used : - MeV.µµm -1
- C.µµm -1
Usual parameter for Single Events
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MEV/(mg/cm2))
MEV/µmpC/µm
*0,2321
*0,0446
*96,5665
Linear Energy Transfer Units in Silicon
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10-2 10-1 100 101 102 1030,01
0,1
1
10
Proton Alpha Silicium
Energy (MeV)
LE
T
MeV
/(m
g/cm
2)LET in Silicon
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0,01 0,1 1 10 1E20,0
0,5
1,0
1,5
2,0
proton alpha
Energy (MeV)
LE
T
MeV
/(m
g/cm
2)
0,25 and 0,35 µm Technology Sensibility
SEU Sensibility
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10-2 10-1 100 101 102 1030,01
0,1
1
10
1E2
1E3
1E4
1E5
1E6 proton alpha Silicium
Ran
ge
(µm
)
Energy (MeV)
Range in Silicon
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LET and Range in Silicon
0,01 0,1 1 10 1E2 1E3 1E4
0,1
1
10
H He Li Be B C N O F Ne Na Mg Al Si P
LE
T (
MeV
.cm
2 /mg
)
Range (µm)
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Total dose Effects
Charge Trapping
Charge trapping after irradiation Threshold voltage degradationas a function of the total Dose
+ + + + + ++ + + ++ + + +
- ------ ---
Metal
Si
SiO2
Charge trapped at the interface
Charge trapped inthe oxide volume
NMOS
0
1
2
3
4
5
6
0 100 200 300 400 500Dose (Gy)
∆∆vt
h (V
)
+VGS
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Radiation Effects
Heavy Ions and Protons• Single Event Effects (Semiconductor / Oxide)
•Total dose effect (Oxide)
• Displacement damage (Semiconductor )
CMOS technologies Single Event Latch upSingle Event Upset
Power devices Single Event BurnoutSingle Event Gate RuptureSingle Event Latchup
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ION
Reverse biased junction
� Diffusion, radial and slow
Generation of electron-hole pair Collection � Drift, Field funneling
Heavy ion - Semiconductor interaction
Radiation Effects
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OUTLINE
• Introduction
• Radiation field & dosimetry
• Total ionizing dose
• Displacement
• Single event effect
• Conclusion
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TOTAL IONISATION DOSE EFFECT (TID)
Total Ionizing Dose (TID) induces :charge trapping in the oxide
new states at the Si-SiO2 interface.
- TID may change the device electrical characteristics for a dose as low as 10 Gy
- Long term behavior, interface state density and bulkcharge, depend on the device history.– Important parameters are :
- Dose- Dose rate- Applied voltage- Temperature- Time.
- These parameters must be taken into account in the device selection.
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TOTAL IONISATION DOSE IN : Si and SiO2
- In Si ( r = 2,3 g cm-3, pair creation energy = 3,8 eV)
In Si N = 3,7 1015 (electron-hole pairs) cm-3 Gy-1
- In SiO2 ( r = 2 g cm-3, pair creation energy = 17 eV)
In SiO2 N = 7,6 1014 (electron-hole pairs) cm-3 Gy-1
- To obtain this result, it is supposed that the energy is mostly transferred to electrons.
- The density of electron-hole pairs for one Gy is very low, unless high dose and dose rate :
- No effect on metal
- No effect on Si or others SC (for low dose rate < 105 Gy-1 s-1 )
- Possible effect on insulator - Trapping (starting at 10 Gy)
Very high dose rate may affect the semiconductor : starting with low carrierconcentrations (military applications)
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TOTAL IONISATION DOSE IN SiO2 ( BULK)
Typical Silicon oxide capacity behavior under irradiation :
- 1 - In SiO2 during irradiation e-h pairs are created
- 2 - As electron and hole mobility are quite different (µµe >> µµh)
- Most electrons may get out
- Most holes can be trapped
- 3 - The charge positive induced by D in the capacitor (S, a) is given by :
∆∆Q = f a S N e D
f is a collection efficiency (0 < f < 1).
f = 0 hard oxide
f= 1 dosimeter
∆∆Q can be considered as the equivalent charge near the surface.
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- With a proper electric field holes may be trapped near to the Si-SiO2 interface,
it’s the worst case :
∆∆Q = a S N e D
The capacity is C = εε S/a (εεr = 3,9)
The voltage drop is : ∆∆V(Volt) = 3,5 a2(µµm) D(Gy)
High dose, bad quality (f = 1) thick oxides (a2) develop important voltage.
- At the device level :
MOS Gates - not a problem for LSI
All devices - Thick Oxide next to the SC may induce, leakage, .....
TOTAL IONISATION DOSE IN SiO2 ( BULK)
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Typical Silicon-silicon oxide interface behavior under irradiation :
In device fabrication, interface states density are kept as low as possible.
Electron injection occurs in the interface states, charges are exchanged with Si.
Interface state charge can be positive or negative depending on the fermi levelposition in regard to the state energy location.
- n channel - acceptor - (negative)
- p channel - donor - (positive)
Interface states charge changes with polarization (time constant).
Total ionizing dose at the Si-SiO2 interface
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- 1 - At Si-SiO2 interface during irradiation chemical bonding are changed,hole trapping at interface, some hydrogen migration have been observed....
- New interface states are formed.
- Interface state density vs. energy is changed.
- Interface charge is more important.
As a result : static and dynamic electrical response of the Si-SiO2 is altered.
- 2 - Si-SiO2 interface state density evolution with time after irradiation :
- Interface state density changes with time.
- Construction after irradiation.
- Effect of annealing, hole trapping at interface.
Total ionizing dose at the Si-SiO2 interface
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TOTAL IONIZATION DOSE AT THE Si-SiO2 INTERFACE
Si O
Si
2
Q Bulk
Q Interf.
Dynamic charge exchange
nm
n'(Q), p'(Q)
n, p
Interface state charge and bulk trapped charge will play an important role :changing the free carrier density n and p next to the interface
possible inversion layermodifying the carrier mobility and life time
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TOTAL IONIZATION DOSE EFFECTS IN DEVICES
MOSTotal ionization dose effects in MOS devicesresult from both, bulk charge and Silicon-silicon oxide interface charge :- Induced mobility degradation- Threshold voltage changes- Induced leakage
Device characteristic changes :- Vth (threshold voltage). Interface and bulkcontribution.- Q Trapped oxide charge (density)- Q Interface trap charge (density and Edistribution)- µµ Mobility in the channel.- ID Channel output drive (n or p)
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BIPOLARTotal ionization dose effects in Bipolar devices result from siliconoxide (protection, isolation, non active) layers proximity with Siactive device area :
- Induced mobility degradation - Induced leakage
Device characteristic changes :- Gain b.- LeakageIC - Integrated circuits
Frequency operation Access and delay time Power supply current
TOTAL IONIZATION DOSE EFFECTS IN DEVICES
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OUTLINE
• Introduction
• Radiation field & dosimetry
• Total ionizing dose
• Displacement
• Single event effect
• Conclusion
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- Displacement damage is related to lattice defect density induced by (secondary) particle collision with atoms, in thetarget, that are ejected from their initial position.
- Lattice defect density will increase with irradiation, inducing adegradation of the material characteristics.
- For the semiconductor, introducing new defects means :- diminution on the carrier life time (minority),- carrier charge density change,- reduced mobility
The electrical characteristics degradation of the semiconductorwill affect the device performances.
Displacement
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The NIEL, Sd , is a target oriented parameter : average energy lossinducing displacement in the target.NIEL simple expression for a mono atomic target :
Sd = (N/A) ΣΣ σσi(E) Ti(E) MeV g-1 cm2
N is the Avogadro number, A is the atomic number of the target.σσ(E) is the interaction cross section. T(E), the average part of theenergy of the recoil atom that will induce displacement. The variouspossible interactions (i) are taken into account.
Particle interaction is a stochastic process, the NIEL is just anapproximation that get sense when the number of events is quitelarge in the considered area.high energy particles :
- 1 GeV muon will induce a shower that will affect billions ofparticles.
Displacement
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Role of (relatively) low energy particles in displacementdamage.Collision with atoms :
- Elastic- Inelastic
- Protons and heavy ions are important at low momentum.- Electrons induce displacement at high energy.- Photons do not have any effect if their energy is lower than 10MeV - wavelength above 10-13 m.
- Neutron behave almost like protons at high energy (100 MeVand up).Displacement damage is important at low energy. Inelasticcollisions are of particular interest.
Displacement
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The energy threshold for atom displacement is in therange of 6 to 25 eV.
- One 100 MeV electron, Si recoil 0,77 MeV, 0,1MeV in displacement
2 500 Frenkel pairs (90 % recombine in aminute).
Displacement
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OUTLINE
• Introduction
• Radiation field & dosimetry
• Total ionizing dose
• Displacement
• Single event effect
• Conclusion
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Effects in CMOS technologies
SRAM structure struck by an ion
Device level Circuit level(memory cell)
Single Event Upset
ION
ION
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Drain current Evolution of the node voltage
For impacts in or close to the drain
0,0E+0
2,0E-3
4,0E-3
6,0E-3
8,0E-3
1,0E-2
1,2E-2
1,4E-2
1E-13 1E-12 1E-11 1E-10 1E-09Temps (s)
Ids
(A)
x=0,6umx=1,5umx=1,9umx=2,4 um
Qcollected
0
1
2
3
4
5
1E-12 1E-11 1E-10 1E-09Temps (s)
Ten
sion
s (V
olts
) Vgrille
Vdrain
(1)
(0)
If Qcollected > Qcritical SEU
Single Event Upset
Effects in CMOS technologies
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Drain current Evolution of the node voltage
For impacts in or close to the drain
0,0E+0
2,0E-3
4,0E-3
6,0E-3
8,0E-3
1,0E-2
1,2E-2
1,4E-2
1E-13 1E-12 1E-11 1E-10 1E-09Temps (s)
Ids
(A)
x=0,6umx=1,5umx=1,9umx=2,4 um
Qcollected
0
1
2
3
4
5
1E-12 1E-11 1E-10 1E-09Temps (s)
Ten
sion
s (V
olts
) Vgrille
Vdrain
(1)
(0)
If Qcollected > Qcritical SEU
Single Event Upset
Effects in CMOS technologies
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LET (MeV.cm2/mg)
1E-7
1E-6
1E-5
1E-4
1E-3
1E-2
1E-1
Cro
ss S
ecti
on
(cm
2)
0 20 40 60 80
Cross Section of a 0.6 µm CMOS technology
Saturation
Threshold
Single Event Upset
Effects in CMOS technologies
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Single Event Latchup
Example oflatchup characteristic
Schematic representationof the parasitic NPNPstructure
0,1
1
10
100
2 3 4 5 6
Vsupply (V)
Isup
ply
(mA
)
Holding pointTriggering point
Vdd
P+P+P+
P substrate
Vout Vss
Vin
NPN
N+ N+N+
Nwell PNP
ION Destructive Failure
Effects in CMOS technologies
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� Adding contacts,body ties
� Geometric dimensions
P+N+
N well
P substratecontacts
N+N+P+P+
P+ P+N+N+
N well
P substrateGuard rings
P+ P+ N+N+
� Guard rings
SEL Hardening
Effects in CMOS technologies
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� Epitaxy
� Doping
N+N+
N well
P+substrate
P epitaxial zone
P+P+
Isolation trench
N+N+
N well
P substrate
P wellBuried oxide
P+ P+
� SOI
SEL Hardening
Effects in CMOS technologies
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Effects in Power Devices : MOSFET, VIP
Single Event Burnout
Source N+Prise P+ Body P
CanalGrille polysilicium
Oxyde de grille
Métal
Substrat N+
Contact de Drain
épi N
ION
émetteurn+ p
n epi c ll ct ur
asprise p +
ION
Power MOSFET (VDMOS) = 15000 cells in parallel
Triggering of the parasitic bipolar transistor Burnout
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Effects in Power Devices :
Single Event Burnout
trace de l'ion
p
n
n+
n+ 5 ns after the ion’s passage
Potential and current lines Generation rate
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MOSFET, VIP
Single Event Burnout
trace de l'ion
p
n
n+
n+
Potential and current lines Generation rate
25 ns after the ion’s passage
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SEB Hardening
0
5
o i d µm
µm
0 5 0 215 30 35 40 45
P P P+P+N+ N+
standardB450H
Sensitive at 380 V Sensitive at 460 V
Sensitive at 310 V
Br 142 M
eV
Effects in Power Devices : MOSFET, VIP
0
5µm
P+ PN+
PP+
N+
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1E+14
1E+15
1E+16
1E+17
1E+18
1E+19
12 14 16 18 20 22 24Distance (microns)
Log
Con
cent
ratio
n (c
m-3
)
Doping Profile at theepi-substrate junction
n+
p plug+ p plug+p emitter
source metallization
gate
n+ substrate
epi n
b s
c l e t r
�
�
�
LET Sensitivity� Standard 1� Stepped profile 1/6� Gradual profile 1/30
Effects in Power Devices : MOSFET, VIP
SEB Hardening
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Single Event Gate Rupture
n+
p plug+ p plug+p
source metallization
gate
n+ substrate
epi n
ION
gate oxide
VG < 0 V
Drain contact
VDS > 0 V
Electronsto draincontact
Holes tosourcecontact
Gate electrode
E
ION track
Effects in Power Devices : MOSFET, VIP
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SEGR Hardening
PP+
N+
0
5
oxi de µm
µm
0 5 10 2015 30 35 40 45
P P P+P+N+ N+
standard
� Oxide thickness optimization� Reduced area of gate oxide� Extended plug
��
�
Effects in Power Devices : MOSFET, VIP
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Single Event Latchup
n+
p plug+ p plug+p
Emitter metallization
Gate
p+ substrate
epi n
Collector +VCE
ION
Parasitic thyristor Example of Latched cell
Hardening solutions comparable to SEB
Effects in Power Devices : IGBT
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ConclusionDevelopment of an Electronic systems Evaluation of the constraint
Radiation field Working conditions (time, temperature, ..)
Testing conditionsSystem evaluationRadiation hardening level :Device
technologydesign
Circuitdesign
SystemredundancySoft correctionShielding