RACETRACK MEMORYRACETRACKMEMORYedutalks.org/downloads/racetrack mem.pdf · Background Information A...
Transcript of RACETRACK MEMORYRACETRACKMEMORYedutalks.org/downloads/racetrack mem.pdf · Background Information A...
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RACETRACK MEMORYRACETRACK MEMORY
JYOTHISH V
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Introduction
Racetrack MemoryRacetrack Memory Experimental non-volatile memory device under Experimental non volatile memory device under
development. At IBM's Almaden Research Center led by Stuart y
Parkin. Incorporates the advantages of Flash Memory and
Hard Disc Drive. Vying to become a "universal memory" in the future.
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Background Information A disruptive technology based on recent
developments in spintronics and physics. Spintronics combines electronics and
magnetism. Charge and the spin of the electron play an
active role.active role. Utilizes the spin of an electron for storing,
accessing and reading data3
accessing and reading data.Racetrack Memory
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Background Information (Contd) In spintronic devices, information is stored
into spins as particular spin orientation. Spin is associated with a magnetic moment. A ‘magnetic domain’ - region within aA magnetic domain region within a
material which has uniform magnetization. Racetrack Memory uses spin currents to Racetrack Memory uses spin currents to
manipulate the magnetic domain walls which stores data
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stores data.Racetrack Memory
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Basic Structure
Uses spinUses spin--coherent electric current coherent electric current to move the magnetic domains to move the magnetic domains gg
A UA U--shapedshaped PermalloyPermalloy wire about wire about200200 nm long and 100nm long and 100 nm thick nm thickggembedded into a silicon chip.embedded into a silicon chip.
Read/Write mechanism near theRead/Write mechanism near thewire.wire.
Racetrack Memory
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Basic Operations
Memory bit selectMemory bit select Using spin momentum Using spin momentum
transfer
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Racetrack Memory
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Basic Operations (Contd)
Write OperationWrite Operation
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Racetrack Memory
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Basic Operations (Contd)
Read OperationRead Operation Using TMR Sensors Using TMR Sensors
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Development Difficulties
Imperfections in wires affected the Imperfections in wires affected the performanceperformanceperformance.performance.
Domain walls required high current to move.Domain walls required high current to move. Access time depends on position of data.Access time depends on position of data.
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Features
No moving partsNo moving parts Small SizeSmall Size Small SizeSmall Size High Storage CapacityHigh Storage Capacity Low Power ConsumptionLow Power Consumption Low Power ConsumptionLow Power Consumption Offers high performance in an inexpensive Offers high performance in an inexpensive
waywaywayway Domain walls are moved by electric pulses Domain walls are moved by electric pulses
instead of magnetic fieldinstead of magnetic field10
instead of magnetic fieldinstead of magnetic fieldRacetrack Memory
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Future Scope
Length of nanoscopic wire can be reduced.Length of nanoscopic wire can be reduced.A ti b d dA ti b d d Access time can be reduced.Access time can be reduced.
Multiple domain walls can be moved together Multiple domain walls can be moved together by a current.by a current.
Storage capacity can be increased by using Storage capacity can be increased by using different configurations. different configurations.
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Conclusion
Magnetic Racetrack Memory promises a l d d inovel data storage device.
Hard Disc on a chip.p Vying to become a ‘Universal Memory’
in the near futurein the near future.
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