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Race track memory by rajeeb
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Transcript of Race track memory by rajeeb
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WELCOME
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RACETRACK MEMORY
PRESENTED BY
RAJEEB R VRoll No: 12S7 ECCollege of Engg. Attingal
GUIDE
SENTHIL NIVAS
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HISTORY OF STORAGE
MAGNETIC TAPE
FLOPPY DISK OPTICAL DISK
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HARD DISK DRIVE
SOLID STATE DRIVE
WHAT’S NEXT
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RACETRACK MEMORY• Racetrack memory (or domain-wall memory (DWM)) is a non-
volatile memory device under development at IBM's Almaden Research Center.
• In early 2008, a 3-bit version was successfully demonstrated.• Racetrack memory, so named because the data "races" around
the wire "track“.• A U-shaped magnetic nanowire is embedded into a silicon chip. • Unlike conventional memory, which relies on electronic
charges to store data, Racetrack uses the spin of an electron.• The operation of racetrack memory is analogous to a solid-
state, non-volatile shift register.• Stores bits of information in the magnetization orientation of
regions in a U channel-shaped ferromagnetic structure.
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WORKING PRINCIPLE
• Blue and red colored regions indicate domains of opposite magnetization
• BLUE- Binary 1
• RED- Binary 0• Pulsed current perpendicular to the
structure pushes domains into or away from reading/writing elements.
• WRITING- By moving the stray field from a neighboring domain wall into and out of range of the racetrack.
• READING- Using TMR
WRITING
READING
Pushing
domain walls
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MAGNETIC DOMAIN• Each electron posses a magnetic moment due to the
spin of electrons • In unmagnetised state the magnetic moment have
different direction and the total magnetic moment cancels out.
• When a strong external magnetic field is applied the magnetic moment of each electrons lined up with respect to the external filed.
• In ferromagnetic materials even after the removal of external magnetic field in each domain, all of the atomic dipoles are coupled together in a preferential direction
DOMAIN
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WRITING INFORMATION INTO THE RACETRACK
• Using magnetic domain wall injector• Red and Blue colour regions indicates
domain of opposite mangnetisation.• In domain wall injector current flows
in one direction for writing 0 and in opposite direction for writing bit 1
Writing Head
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TUNNEL MAGNETORESISTANCE(TMR)• Tunnel magnetoresistance (TMR) is a
magnetoresistive effect that occurs in a magnetic tunnel junction (MTJ), which is a component consisting of two ferromagnets separated by a thin insulator.
• If the insulating layer is thin enough (typically a few nanometers), electrons can tunnel from one ferromagnet into the other.
• The direction of the two magnetizations of the ferromagnetic films can be switched individually by an external magnetic field.
• Parallel-Low resistance• Antiparallel-High resistance
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READING INFORMATION FROM RACETRACK• Using Tunnel Magnetoresistance(TMR)• Resistance change for parallel and antiparallel magnetisation
between two plates • By measuring the resistance change we can determine whether it
is bit 0 or 1
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SPIN POLARIZED CURRENT• As well as mass and charge, an electron has
another intrinsic property, i.e. spin angular momentum.
• Electron spin can only point to up or down along a magnetic field
Unpolarised
electrons
Normal Metal
Ferromagnetic Material
Spin UP e
Spin down e
Spin UP e
Spin down e
Equal Scattering
Unequal Scattering
• Spin-up electrons may encounter less scattering.• So the conductivity due to the majority spin
channel would be higher. • Then, a spin polarized current would emerge
from the ferromagnetic material
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Shifting Domain Walls Down the Racetrack
• The most challenging part of the racetrack memory• It determines the speed, efficiency and accuracy• All the domain walls should move at equal velocity• Movement of the domain walls can be achieved by
sending spin-polarized current through the racetrack.
• The dynamics of moving domain walls along the racetrack and controlling the position of the domains to a high degree of accuracy is under heavy research
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CONSTRUCTIONAL OVERVIEW• A U-shaped ferromagnetic nanowire is embedded
into a silicon chip. • Using a 3D array of nanowire storage density can
be increased• Unlike conventional memory, which relies on
electronic charges to store data, Racetrack uses the spin of an electron.
• The tiny magnets slides along the notched nanowires at speeds greater than 100 meters a second
• Offers a speed of 100 of gigabytes per second
3D racetrack array
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MATERIAL SELECTION
Material selection for the ferromagnetic racetrack material plays a large role in determining the dynamics of domain wall motion creation and movement.
Two type1. Hard – ability to manipulate domain walls and its width eg: Iron, cobalt2. Soft - eg: Crystalline cobalt iron(CoFe)
Ferromagnetic nanowire
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THRESHOLD CURRENT To effectively integrate magnetic racetrack memory with CMOS
ICs, it is important to make sure the current densities required to move domain walls are sufficiently attainable.
In addition, high current densities can cause Joule heating and result in domain wall instability.
Recent racetrack memory prototypes developed at IBM have included heat sinks to account for this.
The total current density will still need to exceed the critical current density
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ADVANTAGES No mechanical movement compared to HDD so speed is high Low cost compared to SSD Provides more storage density than HDD Provides more reliability Can store data for long time Less power
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FUTURE OUTLOOK
Will be the Universal Memory Racetrack memory is a promising technology for permanent
storage of data. Within 10 years IBM says that they can bring the product at the
market Racetrack memory will replace all the HDD’s SSD’s and flash
drive in the near future.
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CONCLUSION
Magnetic racetrack memory is an exciting new technology that has many fundamental advantages over current RAM, HDDs, and SSDs.
Its non-volatility, high read/write speeds, and potential for scalable ultra dense memory make it an attractive type of memory.
It allow every consumer to carry data equivalent to a college library on small portable devices.
In 2006, data centers in the US, required 6.9 Gigawatts of power, and if we use racetrack memory for storage needs it will cut the power significantly.
Will become universal memory within next few years
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THANK YOU
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ANY QUERIES?