PWBroadmap for Smartphone -...

Ibiden Confidential

PWBroadmap for Smartphone

IBIDENCO.,LTD.Hirotaka Taniguchi

IBIDEN CONFIDENTIAL

Ibiden Confidential

【Agenda】

1.Ibiden Introduction

2.Phone & PWB Trend

3.PWB Technology & Roadmap for Smartphone

4.Summary

IBIDEN CONFIDENTIAL

Ibiden Confidential

IBIDEN products overview

PWB

for Mobile

PKG

for PC/Server

CSP

(Chip Scale Package)

for Mobile

DPF

Housing material

Construction

Smartphone & Tablet;> 90%

IBIDEN CONFIDENTIAL

Ibiden Confidential

IBIDEN USA Corp.

Finnish BranchIBIDEN Europe B.V.

IBIDEN Electronics (Shanghai) Co.,Ltd.

IBIDEN Philippines,Inc.IBIDEN (Malaysia) SDN. BHD

IBIDEN SingaporePTE. LTD

IBIDEN Taiwan Co.Ltd.

IBIDEN Electronics (Beijing) Co., Ltd.

Dallas

Phoenix

Sunnyvale IBIDEN DPF France S. A. S

IBIDEN UK Ltd.

IBIDEN Deutschland GmbH

IBIDEN France S. A. S. IBIDEN Korea Co., Ltd.

IBIDEN Co. ,Ltd.

IBIDEN CANADAIBIDEN InternationalCo.,Ltd.

Detroit

IBIDEN Hungary Kft.

IBIDEN IndiaBangalore

IBIDEN VietnamHo Chi Minh

Electronic

Customer support officeCeramic

Micro-Mech, Inc.

IBIDEN Electronics Technology(Shanghai) Co.,Ltd.

Global Networkfor PWBIBIDEN Beijing IBIDEN Aoyanagi

IBIDEN Malaysia

IBIDEN CONFIDENTIAL

Ibiden Confidential

【Agenda】


2.Phone & PWB Trend


4.Summary

IBIDEN CONFIDENTIAL

Ibiden Confidential

Shape

CSP Pitch 0.8mm〜0.6 mm 0.5 mm 0.4 mmPin Count Few hundreds <500pin >1000pin

No Image

PWBStructure

Non Stacked Via Stacked Via Any Layer

Early 2000 2008〜 2010〜

GSM 3G LTEInternet

GPSVideo shooting

Clam shell Touch screen

System

Function

Cellular Phone & PWB Trend

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IBIDEN will provide PWB solution for future smartphone.

Impedance control

Thinner PWB

Smaller board to keep battery area

Increase number of componentsFine pitch component

Thinner / Lighter

More Function

LongerBatteryHigher Speed

AnyLayerFineLine/SpaceLow Dk Material

Low Dk Material

Smartphone & PWB Trend

AnylayerFine Line/Space

AnylayerFine Line/Space

Any Layer + Fine L/S

IBIDEN CONFIDENTIAL

Ibiden Confidential

【Agenda】


2.Phone & PWB Trend

3.Ibiden PWB Technology & Roadmap for Smartphone

4.Summary

IBIDEN CONFIDENTIAL

Ibiden Confidential

Laser drilling

Filled via plating

Pattern Formation

Lamination Press

Laser drilling

Filled via plating

Repeating process

Copper Clad laminate

Ibiden Any Layer (FVSS3) Process Flow

Pattern Formation

IBIDEN CONFIDENTIAL

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0.4mmP design optionCSP pitch 0.4 mmPatterning Subtractive ←

Main routing

Top view

L/S 60/60 um ←Via/pad 75/220 um ←Alignment +/-72.5 um ←

Partly routing

Top view

L/S 40/40 um 40/50 umVia/pad 75/200 um 75/170 umAlignment +/-62.5 um +/-47.5 um

Cu thickness is assumed to be 20um

Two lines between pads with 0.4 mmP are available.

IBIDEN CONFIDENTIAL

Ibiden Confidential

Technology

FVSS1(stacked via)

FVSS3(Any Layer) e-Flex Cavity

NoPhoto NoPhoto

Feature High densityHigh densityMiniaturizationThinner profile

High densityMiniaturizationThinner profile

High densityThinner profile

Surface Finish

ENIGSelective NiAuOSP




Technology Line Up

We can support all technology to achieve smartphone requirement.

IBIDEN CONFIDENTIAL

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2011 2012 2013 2014 2015

CSP Pitch 0.4 mmP 0.4 mmP 0.4 mmP 0.4 mmP 0.3 mmP

Line/Space 50/50 um 50/50 um 40/50 um 40/50 um 30/30 um

Via/Land 75/220 um 75/200 um 75/170 um 75/170 um 75/150 um

# of Line (s)btwn pads 1 1 2 2 2

Layer Count ~ 10layer ~ 12layer ~ 12layer ~ 12layer ~ 14layer

Patterning Subtractive Subtractive Subtractive Subtractive M-SAP

Dielectricmaterial

Conventional Conventional Conventional ConventionalLow Dk

ConventionalLow Dk

PWB Roadmap

At 0.3 mmP, M-SAP will be implemented.M-SAP: Modified Semi Additive Process

IBIDEN CONFIDENTIAL

Ibiden Confidential

Fine patterning tech. segmentation

M-SAP is next generation patterning process for PWBto achieve finer L/S.

60/60 50/50 40/50 30/30 25/25

5

10

15

20

25

SubtractiveM-SAP

SAP

40/40 35/35 20/20 10/10 5/5

L/S(um)

Cu th

ickn

ess (

um)

IBIDEN CONFIDENTIAL

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0.4 mmP & 0.3 mmP design optionCSP pitch 0.4 mm 0.3 mm

Main routing

Top view

L/S 60/60 um ← ←Via/pad 75/220 um ← ←Alignment +/-72.5 um ← ←

Partly routing

Top view

L/S 40/40 um 40/50 um 30/30 umVia/pad 75/200 um 75/170 um 75/150 umAlignment +/-62.5 um +/-47.5 um +/-37.5 um

Cu thickness is assumed to be 20um

Two lines between pads with 0.3 mmP are available.

IBIDEN CONFIDENTIAL

Ibiden Confidential

【Agenda】


2.Phone & PWB Trend


4.Summary

IBIDEN CONFIDENTIAL

Ibiden Confidential

Summary

CSP Pitch is key parameter for future smartphone PWB requirement.

Current: Two lines between pads with 0.4 mmP are available by subtractive.

Future: Two lines between pads with 0.3 mmP will be available by M-SAP.

IBIDEN CONFIDENTIAL

Ibiden Confidential

Thank you!

IBIDEN CONFIDENTIAL

PWBroadmap for Smartphone -...

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