™

Power Module for 0.5 hp Motor Drives

PROVISIONAL

· 0.5 hp (0.37 kW) power outputIndustrial rating at 150% overload for 1 minute

· 180-240V AC single-phase input, 50/60 Hz· Single-phase rectifier bridge· 3-phase, short circuit rated, ultrafast IGBT inverter· HEXFRED ultrafast soft recovery freewheeling diodes· Low inductance (current sense) shunts in positive

and negative DC rail· NTC temperature sensor· Pin-to-baseplate isolation 2500V rms· Easy-to-mount two-screw package· Case temperature range -25oC to 125oC operational

Figure 2. The IRPT1066A Power Module within a motorcontrol system

Figure 1. IRPT1066A Power Module

PD 60142

IRPT1066APowerModule

GateDriverBoard

PWMgenerator

180-240Vsingle-phase input

PWMvariable

frequencyoutput

feedback(non-isolated)

keyboard

feedbackprocessing

ACmotor

IRPT1066A

page 2

IRPT1066A

The IRPT1066A Power ModuleThe IRPT1066A Power Module, shown in figure 1, is a

chip and wire epoxy encapsulated module. It houses inputrectifiers, output inverter, current sense shunts and NTCthermistor. The single-phase input bridge rectifiers arerated at 800V. The inverter section employs 600V, shortcircuit rated, ultrafast IGBTs and ultrafast freewheelingdiodes. Current sensing is achieved through 150 mΩ lowinductance shunts provided in the positive and negative DCbus rail. The NTC thermistor provides temperature sensingcapability. The lead spacing on the power module meetsUL840 pollution level 3 requirements.

The power circuit and layout within the module arecarefully designed to minimize inductance in the powerpath, to reduce noise during inverter operation and toimprove the inverter efficiency. The driver board requiredto run the inverter can be soldered to the power modulepins, thus minimizing assembly and alignment. The powermodule is designed to be mounted to a heat sink with twoscrew mount positions, in order to insure good thermalcontact between the module substrate and the heat sink.

page 3

IRPT1066A

Specifications

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page 4

IRPT1066A

0

0 .5

1

1 .5

2

2 .5

1 4 8 1 2 1 6 2 0 2 4

0

1 0

2 0

3 0

4 0

5 0

6 0

7 0

0

0.5

1

1.5

2

2.5

3

1 4 8 12 16 20 24

0

5

10

15

20

25

30

35

40

PWM Frequency (kHz) – (induction Motor Load)Figure 3a. 0.5 hp/2.9A Output Heat Sink Thermal Resistance and Power Dissipation vs. PWM Frequency

PWM Frequency (kHz) – (induction Motor Load)Figure 3b. 0.25 hp/1.9A Output Heat Sink Thermal Resistance and Power Dissipation vs. PWM Frequency

NOTE: For Figures 3a and 3b: Operating Conditions: Vin = 230Vrms, MI = 1.15, PF = 0.8, TA = 40oC, ZthSA limits∆Tc rise during 1 minute overload to 10oC

Tota

l Pow

er D

issi

patio

n (W

atts)

Ther

mal

Res

ista

nce

(Rth

SAo C

/W)

0.5 hp(0.37 kW)

Tota

l Pow

er D

issi

patio

n (W

atts)

Ther

mal

Res

ista

nce

(Rth

SAo C

/W)

RthSA 100% load(continuous) 10-60 Hz

RthSA 150% load(1 min.) 10-60 Hz

Power150%

Power100%

RthSA 150% load(1 min.) down to 3 Hz

RthSA 100% load(continuous) 10-60 Hz

0.25 hp(0.185 kW)Power

150%

Power100%

RthSA 150% load(1 min.) down to 3 Hz

RthSA 150% load(1 min.) 10-60 Hz

page 5

IRPT1066A

1

10

100

5 10 15 20

V , Gate-to-Emitter Voltage (V)

I ,

Col

lect

or-t

o-E

mitt

er C

urre

nt (

A)

GE

C

V = 50V5µs PULSE WIDTH

CCT = 25 CJ °

T = 150 CJ °

0 4 8 12 16 200

4

8

12

16

20

Q , Total Gate Charge (nC)V

,

Gat

e-to

-Em

itter

Vol

tage

(V

)G

GE

V = 400VI = 5.0A

CC

C

Figure 4b. Typical Gate Charge vsGate-to-Emitter Voltage

Figure 4c. Typical Transfer Characteristics Figure 5. Nominal R-T Characteristics of theNTC Thermistor

Figure 4a. Typical Capacitance vsCollector-to-Emitter Voltage

1 10 1000

100

200

300

400

V , Collector-to-Emitter Voltage (V)

C, C

apac

itanc

e (p

F)

CE

VCCC

====

0V,CCC

f = 1MHz+ C

+ C

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C ies

Coes

Cres

VGE = 0V, f = 1MHzCies = Cge + Cgc , Cce SHORTEDCres = CgcCoes= Cce + Cgc

VCC = 400VIC = 5.0A

TJ =150oC

TJ =25oC

page 6

IRPT1066A

Mounting ProcedureMounting

1. Connect the driver board and the IRPT1066Apower module.

2. Remove all particles and grit from the heat sinkand power substrate.

3. Spread a .004" to .005" layer of silicone grease onthe heat sink, covering the entire area that the powersubstrate will occupy. Recommended heat sink flatners is.001 inch/inch and Total Indicator Readout (TIR) of .003inch below substrate.

4. Place the power substrate onto the heat sink withthe mounting holes aligned and press it firmly into thesilicone grease.

5. Place the 2 M4 mounting screws through the PCBand power module and into the heat sink and tighten thescrews to 1 Nm torque.

Power ConnectionsThe power module pin designation, function and other

details can be obtained from the package outline Figure 7and circuit diagram Figure 8. Single-phase input connectionsare made to pins R and S and inverter output connectionsmade to pins U, V and W. Positive rectifier output andpositive inverter bus are brought out to pins RP and Prespectively in order to provide DC bus capacitor softcharging implementation option. The current shuntterminals are connected to pins IS1, IS2 and IS3, IS4 on thepositive and negative DC rails respectively.

Figure 6. Power Module Mounting Screw Sequence

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1 2

Heat Sink RequirementsFigures 3a-3b show the thermal resistance of the heat sink

required for various output power levels and Pulse-Width-Modulated (PWM) switching frequencies. Maximum totallosses of the unit are also shown. This data is based on thefollowing key operating conditions:

• The maximum continuous combined losses of therectifier and inverter occur at full pulse-width-modulation. These maximum losses set the maximumcontinuous operating temperature of the heat sink.

• The maximum combined losses of the rectifier andinverter at full pulse-width-modulation under overloadset the incremental temperature rise of the heat sinkduring overload.

• The minimum output frequency at which full loadcurrent is to be delivered sets the peak IGBT junctiontemperature.

• At low output frequency, IGBT junction temperaturetends to follow the instantaneous fluctuations of theoutput current. Thus, peak junction temperature riseincreases as output frequency decreases.

Over-Temperature ProtectionOver-temperature can be detected using the NTC

thermistor included in the power module for thermalsensing. Protection circuit that initiates a shutdown if thetemperature of the IMS substrate exceeds a set level can beimplemented. The nominal resistance vs. temperaturecharacteristic of the thermistor is given in Figure 5.

Voltage Rise During BrakingThe motor will feed energy back to the DC link during

regenerative braking, forcing the bus voltage to rise abovethe level defined by the input line voltage. Deceleration ofthe motor must be controlled by appropriate PWM controlto keep the DC bus voltage within the rated maximumvalue.

Functional Information

page 7

IRPT1066A

NOTE: Dimensions are in inches (millimeters)

Figure 7a. Power Module Package Outline

page 8

IRPT1066A

NOTE: Dimensions are in inches (millimeters)

Figure 7b. Power Module Package Outline

page 9

IRPT1066A

Figure 8. Power Module Circuit Diagram

page 10

IRPT1066A

Figure 9. Recommended Gate Drive Circuit

page 11

IRPT1066A

IRPT1066A Power ModuleChip and wire epoxy encapsulated module with 800V

rectifiers, 600V short-circuit rated, ultra-fast IGBT inverter

Part Number Identification and Ordering Instructions

with ultra-fast freewheeling diodes, temperature sensingNTC thermistor and current-sensing low-inductance shunts.

page 12

IRPT1066A

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020

IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590

IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111IR FAR EAST: 171 (K&H Bldg.), 3-30-4 Nishi-ikebukuro 3-Chome, Toshima-ku, Tokyo Japan Tel: 81 3 3983 0086

IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371http://www.irf.com/ Data and specifications subject to change without notice. 5/98