Production and Regional Center at NCU, Taiwan
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Transcript of Production and Regional Center at NCU, Taiwan
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National Central University
Production and Regional Production and Regional Center at NCU, TaiwanCenter at NCU, Taiwan
W.T. Lin
Department of Physics
National Central University
Chung-Li, Taiwan
CMS-PreShower-PRRCMS-PreShower-PRR
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National Central University
Production at ERSO, Hsin-ChuProduction at ERSO, Hsin-Chu
After the PHOBOS’ sensors production, ERSO’s production line had been re-modified.
• Mar. 2000 Integration completed
• Apr. 2000 PE aligner installed
• Jul. 2000 Machine warmed up
• Sep. 2000 R&D runs began
Capacity : 1000 wafers per month
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PHOBOS vs. CMS PreshowerPHOBOS vs. CMS Preshower
• Tracker vs. Preshower
• 6 masks vs. 4 masks
AC vs. DC, Double metal vs. single metal• Itotal < 5 A @ Vfd
Itotal @100 V < 10 A vs. Itotal@300V < 10 A
• Completed vs. On going project
• 450 sensors vs. 1200 sensors
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National Central University
PHOBOS Sensor TechnologyPHOBOS Sensor Technology
Double Metal,Single sided,AC coupled,Polysilicon biased
metal 1metal 1metal 2metal 2
p+ Implant
n+
Polysilicon Drain Resistor
bias bussignal lines
vias
300m 5000kcm
0.2um ONO1.2um ONO
Thin ONO Thick ONO PN junction Polysilicon
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National Central University
IV curve of PHOBOS sensorIV curve of PHOBOS sensor
More than 450 wafers have been delivered.
5A
Vfd=60V
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Preshower Detector LayoutPreshower Detector Layout
63 mm
Test key Silicon Detector
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Structural DrawingStructural DrawingPassivation
N+ layer
Metal
P+ strip i-type substrateField oxide
Metal Strip
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National Central University
CMS Si-Sensor R&DCMS Si-Sensor R&D
• Depth of p+ and n+ : 3, 5, and 14 m
• Thickness of Al :1.2 m
• Passivation : nitride + oxide 1.2 m
n+
p+
n type (1,1,1)320m
Al Passivation
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Pilot runs & Pre-productionsPilot runs & Pre-productions
Date batch# wfrs
10/27 90074 12
10/28 90075 12
1/15 90074A 12
3/2 90075A 12
3/16 00017 12
3/2 00018 12
Date batch# wfrs
6/5 cms01 24
6/5 cms02 24
6/15 cms03 24
6/18 cms04 24
6/18 cms05 24
6/15 cms06 24
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Summary of IV/CV testsSummary of IV/CV tests Date batch# depth of n+ majority I@V>Vfd
6/5 cms01 14 m 50-150 nA/strip
6/5 cms02 50-150 nA/strip
6/15 cms03 5 m 100-150 nA/strip
6/18 cms04 50-100 nA/strip
6/18 cms05 3 m 250-350 nA/strip
6/15 cms06 300-400 nA/strip
• More than one strip have high leakage current that sensor can not be accepted.• 20 accepted sensors : 17 from 03 and 04, 3 from 01 and 02• 23oC, Cstrip=38 - 42 pF, Vfd= 80 - 120 V
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National Central University
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Flow Chart of TestingFlow Chart of Testing1) Sensor received
2) Visual scan
3) Pre-screening : CV, IV
4) sensor dicing
5) Select good sensor for assembly : CV, IV
• Write to the data base during the test
• CV+IV measurement takes about 20 min/wfr
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Wafer DicingWafer Dicing
45o down viewDiamond saw : 30 m
Spinning : 35K rpm
Speed : 40 mm/sec
210m 300m
35m
Side view IV curves unchanged after dicing
P+/top side
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Production PlansProduction Plans
Milestone of delivery
• Jun 2001 20 pcs
• Dec 2001 130 pcs
• Jun 2002 150 pcs
• Jan 2003 900 pcs
ERSO capacity : 1000 wfrs/month
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Equip. for Tests & AssemblyEquip. for Tests & Assembly
• Probe card, Switch board, HV isolation
• IV(K236), CV(K590), and HVps(K237)
• Single channel probe station
• Bonding machine (Kulicke Soffa 4123)
• Visual scan station
• Jigs will be ordered from CERN
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Setup at Regional Lab.Setup at Regional Lab.
IV/CV meters
(NCU and ERSO)
Visual scan and Bondingmachine in 30 m2 clean room
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National Central University
Time consuming and ManpowerTime consuming and Manpower
• 150 working days for measurement :
(Base on 50% of yield, 20 min/wfrs, deliver 1200 wfrs)
• 2 technicians + 1 Ph.D. student
(extra technician + 2 master students will join when assembly starts)
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SummarySummary
• IV/CV test benches have been set and tested at NCU and ERSO.
• CRISTAL data base has been set and tested.
• ERSO and Miracle co. are trying to improve the yield