Product Solutions• UPS Generator + - 4 Discrete Products for Inverters Fast, Soft Recovery Diodes...

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Product Solutions for

Inverters in Distributed Power Markets Solar, Wind, UPS

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Power Semiconductors for Inverters

Your Inverter Requirements… Our Business • Comprehensive range of power semiconductor

products to meet the needs of 500W to 500kW inverters

• Worldwide applications and design support • Let us help you meet your design and

production requirements

A Complete Solution • Optimized power semiconductor

components for inverters • Industry’s widest selection of both

discretes and power modules • Standard and custom products

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Primary Inverter Markets

• Solar

• Wind

• UPS

Generator

- +

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Discrete Products for Inverters

Fast, Soft Recovery Diodes

• DQ Series FRED 600V, 1000V, 1200V – Fast recovery reduces hard-switched losses – Soft recovery technology for low EMI – Avalanche capable for enhanced reliability – Low leakage current at high temperature

Least conduction loss √ √ DC – 25 Field Stop 600, 1200 Field Stop with Trench Gate

Most efficient 25 – 80 PT 600, 900 Power MOS 8™

Highest speed √ √ 40 – 100 NPT 600 Thunderbolt® HS

General purpose, high speed √ √ 25 – 80 NPT 600, 1200 Thunderbolt®

Comment Short Circuit SOA

Easy to Parallel

Frequency Range (kHz) Technology Voltage

Ratings Series

High Performance IGBTs

High Voltage Power MOSFETs

• Power MOS 8™ 1000V – 1200V – Quiet switching technology for low EMI

• CoolMOS™ 600V – 800V – Best cost / performance tradeoff in some designs

“COOLMOS” comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon Technologies AG.

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Power Modules for Inverters

Why modules? • Space savings • Lower system cost • Ease of manufacturing • Voltage isolation

Standard Power Modules • Wide selection of topologies • Semiconductors tailored for inverters • Excellent value

Semi-Custom Options • Flexibility

– Choice of semiconductors – Choice of materials

• Minimal NRE • Short lead times – 3 to 5 weeks common

Application Specific Power Modules • Your proprietary circuit, terminals, and / or materials • Custom packaging • Exclusivity (intellectual property protection)

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Power Module Packaging

Module Package Features • Low Profile

– Reduced stray inductance & resistance – Mix and match packages on same PCB and heat sink

• Isolated baseplate • Symmetrical gate routing

– Optimized switching performance – Easy to parallel modules

• Selection of materials – Standard modules optimize cost with good reliability – Semi-custom options

• AlN substrate for 20% lower thermal resistance • AlSiC baseplate for matched Coefficient of Thermal

Expansion (CTE) – enhanced reliability • Extended temperature range -55°C to 175°C

SP3

SOT-227

SP1

SP6-P

SP4

12mm height

17mm height

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Input Power Conditioning

Input Conditioning Requirements

• Reduce magnetics size, cost

– High switching frequency

• Maximize efficiency – Fast switch for low switching

loss – Low conduction loss switch

and diode – Fast recovery diode to

reduce switching loss and device stress

• Wide input voltage range – High voltage rated devices,

up to 1200V

• Low Electro-Magnetic Interference (EMI)

– Quiet switching technology in the switch and the diode

0 – 400V

√ Thunderbolt HS IGBT

√ √ CoolMOS

√ √ Thunderbolt IGBT

√ √ √ DQ Series Lowest Cost

(900V)

√

800V

√ √ Silicon Carbide Lowest trr Diode

√ √ √ DQ Series Lowest VF

√ MOS 8 IGBT

Lowest Cost:

Switch

√ √ MOS 8 MOSFET Most Efficient:

1200V 1000V 600V Device Voltage Rating 400V – 800V DC Voltage

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Input Conditioning – 0 to 400V DC Modules

SiC

DQ

SiC

DQ

Diode

3.0 SP1 24mΩ 60 600 CoolMOS APTC60DAM24CT1G

2.5 SOT-227 45mΩ 50 600 CoolMOS APT50N60JCCU2

3.0 SP1 24mΩ 60 600 CoolMOS APTC60DAM24T1G

SOT-227

Package

2.5 45mΩ 50 600 CoolMOS APT50N60JCU2

Typical Output Power (kW) RDS(on)

Current Rating

Voltage Rating Switch Part #

Boost Topology (Buck also available)

SP1 SOT-227

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Input Conditioning – 0 to 400V DC Discretes

3.3 TO-247 2.0V 600 APT60DQ60BG MOS 8 IGBT APT80GA60B

APT50GS60BRG

APT100GT60B2RG

APT50GT60BRG

APT68GA60B

APT60N60BCSG

Switch Part #

2.8 TO-247 2.0V 600 APT60DQ60BG MOS 8 IGBT

2.1 TO-247 2.8V 600 APT40DQ60BG Thunderbolt HS IGBT

4.2 T-Max™ 2.0V 600 APT75DQ60BG Thunderbolt IGBT

2.1 TO-247 2.0V 600 APT40DQ60BG Thunderbolt IGBT

2.5 TO-247 45mΩ 600 APT40DQ60BG CoolMOS

Package Typical Output Power (kW)

RDS(on) / VCE(on)

Voltage Rating Diode to Use Switch Type

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Input Conditioning – 400 to 800V DC Modules

1.0 680mΩ 10 1200 MOS 8 MOSFET APTM120DA68T1G




5.0 3.2V 50 1200 Thunderbolt IGBT APTGF50DA120T1G


1.5

Typical Output Power (kW)

330mΩ 18 1000 MOS 8 MOSFET APTM100DA33T1G

RDS(on) / VCE(on) Current Rating Voltage Rating Switch Part #

SP1

Part numbers above are for DQ diode.

For SiC diode, use CT1G suffix. Example: APTGF50DA120CT1G

DQ or SiC Diode

Boost Topology (Buck also available)

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Input Conditioning – 400V to 800V DC Discretes

4.2 T-Max 3.2V 1200 APT40DQ120BG Thunderbolt IGBT APT50GT120B2RG

2.1 TO-247 3.2V 1200 APT30DQ120BG Thunderbolt IGBT APT25GT120BRG



2.3 T-Max 560mΩ 1200 APT30DQ120BG MOS 8 MOSFET APT28M120B2




APT48M80B2

APT17N80BC3G

Switch Part #

2.7 T-Max 200mΩ 800 APT40DQ100BG MOS 8 MOSFET

1.0 TO-247 290mΩ 800 APT15DQ100BG CoolMOS

Package Typical Output Power (kW)

RDS(on) / VCE(on)

Voltage Rating Diode to Use Switch Type

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Inverter Stage – Single Phase Output

Load

Inverter Stage Requirements

• Reduce magnetics size, cost

– Moderate to high switching frequency

– Frequency often less than input conditioning stage

• Maximize efficiency – Balance between conduction

and switching losses – Low conduction loss switch – Fast recovery diode to

reduce switching loss and device stress

• Moderate to high input voltage range

– High voltage rated devices, up to 1200V

• Low Electro-Magnetic Interference (EMI)

– Quiet switching technology in the switch and the diode

Full Bridge Half Bridge

Load

0 – 400V

√

√

1200V

25 – 40kHz

CoolMOS (only with unipolar switching) *

Thunderbolt HS IGBT

Thunderbolt IGBT

Field Stop with Trench Gate

√

800V 600V Device Voltage Rating Diode

400V – 800V DC Voltage

DQ √

40 – 100kHz Intrinsic (extremely

snappy) √

DQ √

DQ √ DC – 25kHz

* Unipolar switching is where two switches in a full bridge operate at line frequency, and two operate at high frequency. See reference material at end of presentation.

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Unipolar-Switched Single Phase Inverter – Full Bridge Modules

Full Bridge

Load

1.5 1.5V / 2.0V 30 600 Field Stop Trench / Thunderbolt IGBTs APTGV30H60T3G

Field Stop Trench / Thunderbolt IGBTs






Field Stop Trench IGBT / CoolMOS

Switches

2.5 1.5V / 45mΩ 50 600 APTCV50H60T3G

5.0

2.5

1.5

5.0

3.8

2.5


1.5V / 2.0V 100 600 APTGV100H60T3G

1.7V / 3.2V 15 1200 APTGV15H120T3G

1.5V / 2.0V 50 600 APTGV50H60T3G

1.5V / 2.0V 75 600 APTGV75H60T3G

1.7V / 3.2V 50 1200 APTGV50H120T3G

1.7V / 3.2V 25 1200 APTGV25H120T3G

RDS(on) / VCE(on) Current Rating Voltage Rating Part #

Field Stop Trench IGBT

Thunderbolt IGBT / CoolMOS

DQ Diode

SP3

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Single Phase Inverter Stage – Half Bridge IGBT Modules

Half Bridge

Load

2.5 DC – 15 1.7 25 1200 Field Stop Trench IGBT APTGT25A120T1G

3.8 DC – 25 1.5 75 600 Field Stop Trench IGBT APTGT75A60T1G

15 – 25

25 – 80

DC – 25

25 – 80

Frequency Range (kHz)

2.5 1.5 50 600 Field Stop Trench IGBT APTGT50A60T1G

Thunderbolt IGBT

Thunderbolt IGBT

Thunderbolt IGBT

Switches

2.5

3.8

2.5


2.0 50 600 APTGF50A60T1G

2.0 75 600 APTGF75A60T1G

3.2 25 1200 APTGF25A120T1G

VCE(on) Current Rating

Voltage Rating Part #

DQ Diode

SP1

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Single Phase Inverter Stage – Discretes

Full Bridge Half Bridge

Load

Load

APT100GT120JRDQ4

APT50GT120B2RDQ2G

APT25GT120BRDQ2G

APT50GS60BRDQ2G

APT100GT60JRDQ4

APT50GT60BRDQ2G

APT60N60BCSG (only with unipolar switching)

High Frequency Switch

8.3

4.2

2.1

2.1

4.2

2.1

2.5


SOT-227 1.5V / 2.0V 600 APT150GN60JDQ4

TO-247 1.5V / 2.8V 600 APT50GN60BDQ2G

TO-247 1.5V / 45mΩ 600 APT50GN60BDQ2G

TO-247 1.5V / 2.0V 600 APT50GN60BDQ2G

TO-247 1.7V / 3.2V 1200 APT25GN120B2DQ2G

SOT-227 1.7V / 3.2V 1200 APT100GN120JDQ4

264-Max / T-Max 1.7V / 3.2V 1200 APT50GN120L2DQ2G

Package RDS(on) / VCE(on) Voltage Rating Low / Mid Frequency Switch

All IGBT Combis are packaged with anti-parallel DQ diode.

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Single Phase Inverter Boost + Unipolar-Switched Full Bridge Modules

5.0 SP6-P 24mΩ

1.5V / 2.0V 100 600

CoolMOS Boost Field Stop Trench / Thunderbolt Bridge

APTGV100H60BPG

SP6-P

SP4

SP4

Package

5.0

2.5

2.5


3.2V 1.7V / 3.2V

75 1200 Thunderbolt Boost Field Stop Trench / Thunderbolt Bridge

APTGV50H120BPG

45mΩ 1.5V / 2.0V

60 600 CoolMOS Boost Field Stop Trench / Thunderbolt Bridge

APTGV50H60BG

3.2V 1.7V / 3.2V

50 1200 Thunderbolt Boost Field Stop Trench / Thunderbolt Bridge

APTGV25H120BG

RDS(on) / VCE(on)

Current Rating

Voltage Rating Switches Part #

Field Stop Trench IGBT

Thunderbolt IGBT

DQ Diode

Thunderbolt IGBT / CoolMOS

DQ Diode

SP6-P SP4

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3 Phase Inverter Solutions Modules

Load

3Φ Bridge

Load

Load

3.8 1.5 75 600 Field Stop Trench IGBT APTGT75TA60PG



5.0 3.2 50 1200 Thunderbolt IGBT APTGF50TA120PG


4.5 2.0 90 600 Thunderbolt IGBT APTGF90TA60PG


Typical Output Power (kW) VCE(on) Current Rating Voltage Rating Switch Part #

SP6-P

Triple Phase Leg

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Other Module Options

• Standard modules in catalog or on website – Wide selection of power semiconductors and circuit topologies – If what you need is not listed here, you may find it as a standard module in the catalog or on the

website • Semi-Custom

– Choice of semiconductors • SiC diodes • Other types of MOSFETs, IGBTs, and / or diodes • Power semiconductors from various manufacturers

– Choice of materials • Aluminum nitride (AlN) ceramic substrate

– Alumina (Al2O3) is standard for lower cost, except SOT-227 which uses AlN standard – AlN provides 20% lower thermal resistance

• Wider temperature range – Special gel and epoxies allow wider temperature range

• ASPM – Custom circuit

• Your proprietary topology in a module – Intellectual property protection with exclusivity – Custom terminals, materials and / or housing

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Reference Material Unipolar Switching

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Unipolar Switching – Positive Half Wave

Load

IGBTs B and C are on

A

B

C

D

w x y

z

Vwx

Vyz

21


Load

IGBT C stays on

IGBT B switches off

Diode A turns on

A

B

C

D

w x y

z

Vwx

Vyz

22


Load

IGBT C stays on

Diode A reverse commutates as IGBT B switches back on

Diode A recovery current increases turn-on switching loss in IGBT B

A

B

C

D

w x y

z

Vwx

Vyz

Recovery current

Load current

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Load

IGBT C stays on

IGBT B switches off

Diode A turns on

A

B

C

D

w x y

z

Vwx

Vyz

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Unipolar Switching – Negative Half Wave

Load

IGBT C switches off

IGBTs A and D switch on

A

B

C

D

w x y

z

Vwx

Vyz

25

Unipolar Switching

IGBT A stays on

IGBT D switches off

Diode C turns on

Load

A

B

C

D

w x y

z

Vwx

Vyz

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Unipolar Switching – Negative Half Wave

Load

IGBT A stays on

Diode C reverse commutates as IGBT D switches back on

Diode C recovery current increases turn-on switching loss in IGBT D

A

B

C

D

w x y

z

Vwx

Vyz

Recovery current

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Inverter Stage Operation

Load

A

B

C

D

w x y

z

Vwx

Vyz

• Two IGBTs switch at line frequency: 50/60Hz – A low VCE(on) (slower speed grade) IGBT is ideal

• Two IGBTs switch at high frequency: tens of kHz – A low switching loss (medium to high speed grade) IGBT is ideal

• The low VCE(on) IGBT needs a fast recovery anti-parallel diode to minimize loss in the high frequency switched IGBTs

– Need a fast diode packaged with a slower speed grade IGBT

• Leakage currents must match so phase leg center point voltages are properly balanced – May require ballast resistors or some other way to ensure voltage balance

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Reference Material CoolMOS Body Diode Characteristics

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CoolMOS Reverse Recovery

• Hard commutation results in extremely snappy recovery of the CoolMOS body diode • Snap-off of the body diode can lead to EMI, sustained oscillation, and even failure

APT60N60BCSG Reverse Recovery

-30-25-20-15-10-505

10152025

5.00E-07 1.00E-06 1.50E-06 2.00E-06 2.50E-06 3.00E-06

Time (s)

Cur

rent

(A)

Product Solutions• UPS Generator + - 4 Discrete Products for Inverters Fast, Soft Recovery Diodes...

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