Processes of Fabrication 1. 2 N Transistor Structure Review.

Processes of Fabrication

1

2

N Transistor Structure Review

Polysilicon GateSiO2

Insulator

n+ n+

p substrate

channel

Source Drain

n transistor

G

S

D

SB

LW

G

S

D

substrate connectedto GND

3

P Transistor Structure Review

p+ p+

n substrate

channel

Source Drain

p transistor

G

S

D

SB

Polysilicon GateSiO2

Insulator L

W

G

substrate connectedto VDD

4

Semiconductor Review

Create by doping a pure silicon crystal Diffuse impurity into crystal lattice Changes the concentration of carriers

Electrons Holes

More doping -> more carriers available

n-type semiconductor (n or n+) Majority carrier: electrons Typical impurity: Arsenic (Column V)

p-type semiconductor (p or p+) Majority carrier: holes Typical impurity: Boron (Column III)

nn+

pp+

5

Other key working materials

Insulator - Silicon Dioxide (SiO2) Used to insulate transistor gates (thin oxide) Used to insulate layers of wires (field oxide) Can be grown on Silicon or Chemically Deposited

Polysilicon - polycrystalline silicon Key material for transistor gates Also used for short wires Added by chemical deposition

Metal - Aluminum (…and more recently Copper) Used for wires Multiple layers common Added by vapor deposition or “sputtering”

6

CMOS Processing

Wafer Processing Photolithography Oxide Growth & Removal Material Deposition & Removal Diffusion of Impurities Putting it all together

7

A View of the Cleanroom

AMD’s Dresden Fab - Source: AMD Corporation www.amd.com

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Creating Wafers - Czochralski Method

Start with crucible of molten silicon (≈1425oC)

Insert crystal seed in melt

Slowly rotate / raise seed to form single crystal boule

After cooling, slice boule into wafers & polish

Crucible

MoltenSilicon

9

Definitions

Wafer – a thin circular silicon Each wafer holds hundreds of dies Transistors and wiring are made from many layers

(usually 10 – 15) built on top of one another the first half-dozen or so layers define transistors the second define the metal wires between transistors

Lambda () – the smallest resolvable feature size imprinted on the IC; it is roughly half the length of the smallest transistor 0.2m IC – the smallest transistors are

approximately 0.2m in length (= 0.1m)

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Wafer Structure

Current production: 200mm (10”)

Newest technology: 300mm (12”)

Die - Single IC chip

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Processing Wafers

All dice on wafer processed simultaneously Each mask has one image for each die The basic approach:

Add & selectively remove materialsMetal - wiresPolysilicon - gatesOxide

Selectively diffuse impurities Photolithography is the key

12

Fabrication processes

IC built on silicon substrate: some structures diffused into substrate; other structures built on top of substrate.

Substrate regions are doped with n-type and p-type impurities. (n+ = heavily doped)

Wires made of polycrystalline silicon (poly), multiple layers of aluminum (metal).

Silicon dioxide (SiO2) is insulator.

13

Photolithography

Coat wafer with photoresist (PR)

Shine UV light through mask to selectively expose PR

Use acid to dissolve exposed PR

Now use exposed areas for Selective doping Selective removal of material

under exposed PR

Wafer

Photoresist

Mask

UV Light

14

Adding Materials

Add materials on top of silicon Polysilicon Metal Oxide (SiO2) - Insulator

Methods Chemical deposition Sputtering (Metal ions) Oxidation

Silicon

Added Material (e.g. Polysilicon)

15

Oxide (Si02) - The Key Insulator

Thin Oxide Add using chemical deposition Used to form gate insulator & block active areas

Field Oxide (FOX) - formed by oxidation Wet (H20 at 900oC - 1000oC) or Dry (O2 at 1200oC) Used to insulate non-active areas

Silicon Wafer Silicon Wafer

SiN / SiO2FOX FOXSiO2 Thin Oxide

16

Patterning Materials using Photolithography

Add material to wafer Coat with photoresist Selectively remove

photoresist Remove exposed

material Remove remaining PR

Silicon

Added Material (e.g. Polysilicon)

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Diffusion

Introduce dopant via epitaxy or ion implant e.g. Arsenic (N), Boron (P)

Allow dopants to diffuse at high temperature

Block diffusion in selective areas using oxide or PR

Diffusion spreads both vertically, horizontally

Silicon

Diffusion

Blocking Material (Oxide)

18

CMOS Well Structures

Need to accommodate both N, P transistors Must implement in separate regions - wellls

(tubs) N-well P-well

Alternate approach: Silicon on Insulator (SOI)

n-wellp substrate

n well

n substrate

p well

p-welln tub p tub insulator

n epi p epi

twin-tub SOI

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Detailed View - N-Well Process

Overall chip doped as p substrate, tied to GND

Selected well areas doped n, tied to VDD

n+ n+

p substrate

channelp+ p+

n well

channel

Gnd

n+ n+

p substrate

channelp+ p+

n well

channel

VDD

20

P substrate

CMOS Processing - Creating an Inverter

Substrate Well Active Areas Gates Diffusion Insulator Contacts Metal

wafer

n well

21

P substrate

CMOS Mask Layers

Determine placement of layout objects

Color coding specifies layers

Layout objects: Rectangles Polygons Arbitrary shapes

Grid types Absolute (“micron”) Scaleable (“lambda”) wafer

n well

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Mask Generation

Mask Design using Layout Editor user specifies layout objects on different layers output: layout file

Pattern Generator Reads layout file Generates enlarged master image of each mask layer Image printed on glass reticle

Step & repeat camera Reduces & copies reticle image onto mask One copy for each die on wafer Note importance of mask alignment

23

Simple cross section

substraten+ n+p+

substrate

metal1

poly

SiO2

metal2

metal3

transistor via

24

Transistor structure

n-type transistor:

25

0.25 micron transistor (Bell Labs)

poly

silicide

source/drain

gate oxide

Fabrication and LayoutSlide 26

Ion Implantation

180 kVResolvingAperture

Ion Source

Equipment Ground

Acceleration Tube

90° Analyzing Magnet

Terminal Ground

20 kV

Focus Neutral beam and beam path gated

Beam trap andgate plate

Wafer in waferprocess chamber

X - axisscanner

Y - axisscanner

Neutral beam trap and beam gate

Gases Ar AsH3

B11F3 * He N2

PH3

SiH4

SiF4

GeH4

Solids Ga In SbLiquids Al(CH3)3

Process Conditions Flow Rate: 5 sccm Pressure: 10-5 Torr Accelerating Voltage: 5 to 200 keV


Strip Oxide

Strip off the remaining oxide using HF Back to bare wafer with n-well Subsequent steps involve similar series of

steps

p substraten well


Polysilicon

Deposit very thin layer of gate oxide < 20 Å (6-7 atomic layers)

Chemical Vapor Deposition (CVD) of silicon layer Place wafer in furnace with Silane

gas (SiH4) Forms many small crystals called

polysilicon Heavily doped to be good

conductor Thin gate oxidePolysilicon

p substraten well

n+

p substrate

p+

n well

A

YGND VDD

n+p+

substrate tap well tap

n+ p+


Polysilicon Patterning

Use same lithography process to pattern polysilicon

Polysilicon

p substrate

Thin gate oxidePolysilicon

n well


Self-Aligned Process

Use oxide and masking to expose where n+ dopants should be diffused or implanted

N-diffusion forms nMOS source, drain, and n-well contact

p substraten well


N-diffusion

Pattern oxide and form n+ regions Self-aligned process where gate blocks

diffusion Polysilicon is better than metal for self-

aligned gates because it doesn’t melt during later processing

p substraten well

n+ Diffusion


N-diffusion

Historically dopants were diffused

Usually ion implantation today But regions are still called

diffusion

n wellp substrate

n+n+ n+

n+

p substrate

p+

n well

A

YGND VDD

n+p+


n+ p+


N-diffusion

Strip off oxide to complete patterning step

n wellp substrate

n+n+ n+


P-Diffusion

Similar set of steps form p+ diffusion regions for pMOS source and drain and substrate contact

p+ Diffusion

p substraten well

n+n+ n+p+p+p+

n+

p substrate

p+

n well

A

YGND VDD

n+p+


n+ p+


Contacts

Now we need to wire together the devices

Cover chip with thick field oxide

Etch oxide where contact cuts are needed

p substrate

Thick field oxide

n well

n+n+ n+p+p+p+

Contact

n+

p substrate

p+

n well

A

YGND VDD

n+p+


n+ p+


Metallization

Sputter on aluminum over whole wafer Pattern to remove excess metal, leaving

wires

p substrate

Metal

Thick field oxide

n well

n+n+ n+p+p+p+

Metal


Physical Vapor Deposition (PVD)

Barrier Metals SiH4

Ar N2

N2

Ti PVD Targets *

PhysicalVaporDepositionChambers

Cluster ToolConfiguration

TransferChamber

Loadlock

Wafers

PVD Chamber

TransferChamber

Cryo Pump

Wafer

N S N

+

e -

BacksideHe Cooling

Argon &Nitrogen

ReactiveGases

DC PowerSupply (+)

Process Conditions Pressure: < 5 mTorr Temperature: 200 degrees C. RF Power:


Schematic Diagram of Vacuum Evaporation System (PVD)


Layout

Chips are specified with set of masks Minimum dimensions of masks determine

transistor size (and hence speed, cost, and power) Feature size f = distance between source and drain

Set by minimum width of polysilicon Feature size improves 30% every 3 years or so Normalize for feature size when describing design

rules Express rules in terms of = f/2

E.g. = 0.3 m in 0.6 m process


Simplified Design Rules

Conservative rules to get you started


Inverter Layout

Transistor dimensions specified as Width / Length Minimum size is 4 / 2sometimes called 1 unit For 0.6 m process, W=1.2 m, L=0.6 m


Summary

MOS Transistors are stack of gate, oxide, silicon Can be viewed as electrically controlled switches Build logic gates out of switches Draw masks to specify layout of transistors

Now you know everything necessary to start designing schematics and layout for a simple chip!

Processes of Fabrication 1. 2 N Transistor Structure Review.

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