Process flow with Succinic Acid SpecMat Approval Request

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Process flow with Succinic Acid SpecMat Approval Request July 10, 2009 Saeroonter Oh

description

Process flow with Succinic Acid SpecMat Approval Request. July 10, 2009 Saeroonter Oh. Wafer substrate. Cap. 35nm. In 0.53 Ga 0.47 As. n + Si-doped 1e19 cm -3. 10nm. Al 0.48 In 0.52 As. Barrier. n-type Si-doping 5e12 cm -2. Al 0.48 In 0.52 As. 3nm. Channel. 13nm. - PowerPoint PPT Presentation

Transcript of Process flow with Succinic Acid SpecMat Approval Request

Page 1: Process flow with Succinic Acid SpecMat Approval Request

Process flow with Succinic Acid SpecMat Approval Request

July 10, 2009

Saeroonter Oh

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Wafer substrate

Al0.48In0.52As

InP Substrate (3in. or 4in.)

Al0.48In0.52As

Al0.48In0.52As

In0.53Ga0.47As

10nm

3nm

13nm

500nm

In0.53Ga0.47As n+ Si-doped 1e19 cm-3 35nm

n-type Si-doping 5e12 cm-2

Cap

Barrier

Channel

Buffer

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Process Flow

• Mask#1: Gate pattern - karlsuss, headway• Wet etch w/ SA solution - wbgaas• Evaporate gate metal (Pt) - innotec• Anneal 250°C for 5 min - rtagaas• Lift-off in 1165 - wbsolvent• Mask#2: S/D pattern - karlsuss, headway• Wet etch w/ SA solution - wbgaas• Wet etch w/ HCl solution - wbgaas• Evaporate S/D metal (Au/Ge/Ni) - innotec• RTA (Standard: 450°C for 30sec) - rtagaas• Lift-off in 1165 - wbsolvent

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PR

capbarrchan

Gate GateS/D

PR

Gate

GatePR

PR

capbarrchan

Mask #1, litho

Mask #2, litho

SA solution etch

SA solution etch+ HCl solution etch

S/D metal evap lift-off RTA

Process Flow

Gate metal evap lift-off RTA

1 2

3

4 5

6

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Etch Process: InGaAs on InAlAs

• Succinic acid (SA) solution– 200g of crystal acid in 1L DI

water– Addition of NH4OH for pH=5

• SA:H2O2 ratio changes etch rates– 5:1 used by D. Kim et al.

• Etch rate: – 425 Å/min for InGaAs– 6 Å/min for InAlAs

5:1 volume ratio

InGaAs

InAlAs

Ref: H. Fourre et al., J.Vac.Sci.Tech.B, 1996.