Process flow with Succinic Acid SpecMat Approval Request
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Process flow with Succinic Acid SpecMat Approval Request July 10, 2009 Saeroonter Oh
description
Process flow with Succinic Acid SpecMat Approval Request. July 10, 2009 Saeroonter Oh. Wafer substrate. Cap. 35nm. In 0.53 Ga 0.47 As. n + Si-doped 1e19 cm -3. 10nm. Al 0.48 In 0.52 As. Barrier. n-type Si-doping 5e12 cm -2. Al 0.48 In 0.52 As. 3nm. Channel. 13nm. - PowerPoint PPT Presentation
Transcript of Process flow with Succinic Acid SpecMat Approval Request
Process flow with Succinic Acid SpecMat Approval Request
July 10, 2009
Saeroonter Oh
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Wafer substrate
Al0.48In0.52As
InP Substrate (3in. or 4in.)
Al0.48In0.52As
Al0.48In0.52As
In0.53Ga0.47As
10nm
3nm
13nm
500nm
In0.53Ga0.47As n+ Si-doped 1e19 cm-3 35nm
n-type Si-doping 5e12 cm-2
Cap
Barrier
Channel
Buffer
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Process Flow
• Mask#1: Gate pattern - karlsuss, headway• Wet etch w/ SA solution - wbgaas• Evaporate gate metal (Pt) - innotec• Anneal 250°C for 5 min - rtagaas• Lift-off in 1165 - wbsolvent• Mask#2: S/D pattern - karlsuss, headway• Wet etch w/ SA solution - wbgaas• Wet etch w/ HCl solution - wbgaas• Evaporate S/D metal (Au/Ge/Ni) - innotec• RTA (Standard: 450°C for 30sec) - rtagaas• Lift-off in 1165 - wbsolvent
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PR
capbarrchan
Gate GateS/D
PR
Gate
GatePR
PR
capbarrchan
Mask #1, litho
Mask #2, litho
SA solution etch
SA solution etch+ HCl solution etch
S/D metal evap lift-off RTA
Process Flow
Gate metal evap lift-off RTA
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4 5
6
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Etch Process: InGaAs on InAlAs
• Succinic acid (SA) solution– 200g of crystal acid in 1L DI
water– Addition of NH4OH for pH=5
• SA:H2O2 ratio changes etch rates– 5:1 used by D. Kim et al.
• Etch rate: – 425 Å/min for InGaAs– 6 Å/min for InAlAs
5:1 volume ratio
InGaAs
InAlAs
Ref: H. Fourre et al., J.Vac.Sci.Tech.B, 1996.
