PROCESS CHANGE NOTIFICATION - Mouser Electronics · Nch Vth[V] Nch Idr[μA/μm] Pch Vth[V] Pch...

PROCESS CHANGE NOTIFICATION

Dear Customers,

We thank you for your support and corporation.

Because we change a manufacturing facility and the materials from Oita to Iwate for NANO-Flash

product, I notify you of this.

We are producing this product in Oita factory, however we will produce it in Iwate factory from now on

since we should be provided the dual fabrication to improve our supply service.

If you have any questions, please feel free to contact us.

We would appreciate your support and cooperation.

1. Affected product

- NANO-Flash product.

2. Contents of change point

Item <Present> <Future>

Wafer manufacture location (Oita) (Iwate)

Bonding wire Au wire Cu wire

(Oita) ：Toshiba Corp. Oita factory

(Iwate) ：Iwate Toshiba electronics Co., Ltd.

-There is no change the quality between two locations.

3. Reason of the change

- Promotion of BCP (Dual-fabrication).

4. Schedule

-Change plan: Dec, 2014.

- We will be shipped Iwate products to you as soon as you has been approved this inform.

YOUR UNDERSTANDING WILL BE HIGHLY APPRECIATED.

SINCERELY YOURS,

HIROTAKA WATANABE

MANAGER

QUALITY ASSURANCE SECTION

IWATE TOSHIBA ELECTRONICS CO., LTD.

Aug 25, 2014

PCN#:14CN-026 IWATE TOSHIBA ELECTRONICS CO., LTD. 6-6 KITA-KOGYO-DANCHI, KITAKAMI, IWATE 024-8510 JAPAN PHONE:+81-197-71-3050, FAX:+81-197-66-5293

IWATE TOSHIBA ELECTRONICS CO.,LTD.

Change of wafer manufacture location and

Cu wire of NANO-Flash product.

Affected products： NANO-Flash product.

Date :Aug 25 2014

PCN# :14CN-026

QUALITY ASSURANCE SECTION

IWATE TOSHIBA ELECTRONICS CO.,LTD.

2 IWATE TOSHIBA ELECTRONICS CO.,LTD.

Explanatory material of wafer manufacture

location of NANO-Flash product.


Announcement about the wafer production place and Cu wire

Regarding the affected NANO-Flash products, although these products have been

produced at TOSHIBA Corporation Semiconductor & Storage Products Company OITA

Operations, these products will be developed to Iwate Toshiba electronics Co., Ltd.

By this dual fabrication, reduction of production risk and a stable supply can be

implemented.

Also, we will carry out about development of "Cu Wire" that is also developed on the Oita

factory product.

＜The point to be checked for the deployment to Iwate Toshiba＞

1. Process check

We have confirmed that Iwate Toshiba product has same electrical characteristic and

reliability compared with OITA Operations product, by using test chip.

2. Trial production and evaluation of product

We have confirmed that the characteristic and reliability are same as OITA Operations

product.


5M1E OITA Operations 8inch Iwate Toshiba 8inch

Man Operator is different, but control is done by same education

system, based on our certification of education for operator.

Machine Same level machine Is used

Measurement Periodical calibration and correlativity were checked.

Method process Tuning has been done for same device characteristics and

product characteristics.

Material

Wafer material Same wafer material is used

Metal wiring Same film structure

interlayer Same film structure

Equipment Cleanliness level SMIF(Inside class : Lower than 1)

System Quality system and a production system are equal.

Regarding Iwate Toshiba 8inch, products are manufactured by production

line that has production history with 0.13um generation products.

Summary of change point related to wafer


Iwate product development evaluation contents １

Nch Vth[V]

Nch

Idr[

μA

/μm

]

Pch Vth[V] P

ch

Idr[

μA

/μm

]

Nch Tr. Vth-Idr Characteristic Pch Tr. Vth-Idr Characteristic

Characteristic spec line

■ Iwate n= 47p

○ OITA n= 470p

Compared the product of Iwate with a product of Oita and confirmed that

it was equal for a characteristic.


We confirmed that there is no problem on product reliability.

Test item Test condition QTY Result

HTCB

High temp. Clock bias test

Ta=125 deg.C 1000h

VDD/VCC=Operation max

32pcs * 3Lot 96/96 OK

HTS

High temp. Storage

Ta=150 deg.C

1000h

32pcs * 3Lot 96/96 OK

Iwate product development evaluation contents ２


Explanation of becoming it Cu Wire


[1] Change Overview (Characteristic comparison)

[2] Description of Change

[3] Conceptual Drawing of Change Point

[4] Risk Analysis for Change

[5] Basic Evaluation Data for Change Risk

[6] Verification of Electrical Characteristic

[7] Reliability Test Result

[8] Identification Method of Modified Product

[9] Changeover Schedule

Contents


Item Au Superiority Cu

Resistivity @100degC 2.88uohm-cm < 2.23umohm-cm

Coefficient of thermal

conductivity (@ 100degC)

313W/m・K < 395W/m・K

Young’s modulus 78GPa < 130GPa

Pull strength 200~250MPa < 280~310MPa

Melting point 1064degC = 1085degC

Fusing current for

25um-dia/4mm loop

0.61 A < 0.69 A

Corrosion resistance Resistant to oxidizing > Oxidizing-prone

Alloy reliability Prone to interdiffusion with

Aluminum (Kirkendall void) <

Less prone to interdiffusion with

Aluminum

Cu wire is superior in electrical characteristics/mechanical strength to Au wire.

[1] Change Overview (Characteristic comparison)


Package type

Material to be changed?

Base

material

Die bonding

paste

Bonding wire

material

Mold resin Outer

lead

material

Leadframe type

No No

Yes

From Au to Cu

Yes

To be unified

into Halogen-

free resin

No

[2] Description of Change

■ Package type to be affected & change item

Summary of changes:

- Bonding wire material of each package type will be changed from Au to Cu.

- Halogen-contained mold resin used for some product types will be changed to Halogen-free type as corrosion

caused by reaction between Halogen-base material and Cu is worried.


■ Package structural drawing showing change point

<< Current package >> << Modified package >>

(1) Bonding wire : Cu

(2) Mold resin:

Halogen-free

(1) Bonding wire : Au

(2) Mold resin:

Halogen-contained or halogen-free

Change in (1) Bonding wire & (2) Mold resin will involve no change in product characteristic/ reliability/

package dimensions/ guaranteed mount conditions.

(3) Lead frame (3) Lead frame

[3] Conceptual Drawing of Change Point


[4] Risk Analysis for Change

■ FMEA (FAILURE MODE AND EFFECTS ANALYSIS) for identification of risks

associated with this change

New item

(Dimension/material)Failure Mode Cause of failure

OO

C

Impact of failure

SE

V

Detection method

DET

RP

N

Preventive measure Verification result

OO

C

SEV

DET

RP

N

Cu wire Insufficient bonding strengthInsufficient metal alloy formation due to

conditions not harmonized10

Electrical characteristic

failure (open)10 Wire pull strength/ ball shear strength 3 300 Verify bonding conditions Wire pull/ball shear strength test result 1 10 3 30

Open in bonding wire Stress-caused wire break 5Electrical characteristic

failure (open)10 TCT(temp. cycle test) 5 250

Check only (higher strength thanAu)

TCT result 1 10 5 50

Rise in wire resistance Oxidization in Cu surface 10Electrical characteristic

failure7 HTS(high temperature storage test) 5 350 Optimize process control HTS result 1 7 5 35

Open in bonding areaReduced strength due to growth of

Kirkendall void5


failure (open)10 HTS 5 250


HTS result 1 10 5 50

Open in bonding area Corrosion due to ion components of resin 10Electrical characteristic

failure (open)10 PCT(pressure cooker test) 5 500 Adopt Halogen-free resin

PCT/THS(temperature humidity storagetest) result

1 10 5 50

Short between wires Migration due to ion components of resin 10Electrical characteristic

failure (short)10 THB(temperature humidity bias test) 5 500 Adopt Halogen-free resin THB result 1 10 5 50

Short between wiresWire displacement during resin

encapsulation5


failure (short)10 X-ray inspection 5 250


Wire displacement check result 1 10 5 50

Leakage current due to damage

in dieDamage caused by bonding stress 10


failure7

Check for crack by wet-chemical

decapsulation7 490 Verify bonding conditions Under-pad damage check result 1 7 7 49

Halogen-free resin Pop corn crack Insufficient resin adhesion 5Electrical characteristic

failure (open)10 SAT after heat resistance test 5 250 Adopt proven resin Heat resistance test result 1 10 5 50

■ For oxidation/corrosion of Cu wire which are identified as concerns about change to Cu

wire by the above FMEA, the following two actions will be implemented:

1) Introduction of forming gas and 2) Unification into halogen-free resin

(See subsequent slides for evaluation result for each item.)



5-1) 1st bond section view (Package type: ＳＳＯＰ１６)


5-2) 2nd bond section view (Package type: ＳＳＯＰ１６)



5-3)Workmanship comparison between Cu and Au wires)

Item Au wire (n=22) Cu wire (n=22)

Pull strength ［mN ] ＡＶＥ８１．０１２４．０

ＭＡＸ９２．１１３９．８

ＭＩＮ６５．７１１１．５

Ｐｐｋ２．３２３．４０

Shear strength ［mN ] ＡＶＥ３３７．４３４２．９

ＭＡＸ３８２．４３９８．６

ＭＩＮ２２２．８２９３．６

Ｐｐ１．４０１．８８

Pull strength on 2nd bond side［mN ]

ＡＶＥ７９．６９０．０

ＭＡＸ９１．３１１５．２

ＭＩＮ６１．６７４．２

Ｐｐ１．５６１．５４

Wire displacement ［％］ＡＶＥ１．７１．４

ＭＡＸ２．５２．２

ＭＩＮ１．０２０．４１

Ｐｐ５．６９６．１４

Cu Au

Spec. 29.4mN以上 29.4mN以上

AVE 117.5mN 61.1mN

MAX 133.7mN 68.6mN

MIN 102.3mN 50.0mN

σ 9.7 4.6

cp 3.03 2.29


AVE 396.7mN 254.7mN

MAX 433.7mN 270.5mN

MIN 364.0mN 236.1mN

σ 18.6 8.5

cp 3.94 4.21

Spec. 15%以下 15%以下

AVE 4.4% 5.8%

MAX 5.7% 7.9%

MIN 2.7% 3.2%

σ 0.9 1.0

cp 4.08 3.12

引張強度

剥離強度

ﾜｲﾔｰ流れ

Cu Au


AVE 117.5mN 61.1mN

MAX 133.7mN 68.6mN

MIN 102.3mN 50.0mN

σ 9.7 4.6

cp 3.03 2.29


AVE 396.7mN 254.7mN

MAX 433.7mN 270.5mN

MIN 364.0mN 236.1mN

σ 18.6 8.5

cp 3.94 4.21

Spec. 15%以下 15%以下

AVE 4.4% 5.8%

MAX 5.7% 7.9%

MIN 2.7% 3.2%

σ 0.9 1.0

cp 4.08 3.12

引張強度

剥離強度

ﾜｲﾔｰ流れ

As a result of checking the above data as compared with mass-produced Au-wire packages, we

confirmed no significant difference except for better performance of Cu wire in bonding strength.

From this result, we judged that product start-up was completed.



[6] Verification of Electrical Characteristic

Item Comparison result

DC

characteristic

IDDS (Standby current) No significant difference

IIL (Low-level input current) No significant difference

IIH (High-level input current) No significant difference

IOL (Low-level output current) No significant difference

IOH (High-level output current) No significant difference

AC

characteristic Operating range No significant difference

1. Result of electrical characteristic comparison between Cu and Au wires

The above result indicates that this wire material

change will cause no problem in electrical

characteristics.


Test item Condition Read point

Result

(Fail/Gross)

Pressure Cooker 127degC/ 100%/0.24Mpa 120h 0/165pcs

Temperature Cycling -65degC/150degC 300cyc 0/165pcs

Temperature Humidity Bias 85degC/85%/VddMAX 1000h 0/165pcs

[7] Reliability Test Result

No failure was observed after the tests.


Product marking

OITA product Iwate Toshiba product

mother plant OITA 8inch Iwate Toshiba 8inch

Product name（example） ※letters in parenthesis differ

according to the product

TMPM370FYFG TMPM370FYFG(CKYZ)

Change to Iwate Toshiba : “CKYZ” (C: Cu code/Z: Iwate Toshiba code)

marking No change of marking design

Production lot code

（example） ※digit number of product

year differs depending on

a product.

$ $ # # XXL

$ $ : Year(a double figures end)

# # : Weekly

XXL : Trace code(Oita)

$ $ # # XXI

$ $ : Year(a double figures end)

# # : Weekly

XXI : Trace code(Iwate)

・Regarding Iwate Toshiba product, letters in parenthesis(ADD code) of product name is changed.

・Although there is no change of marking design, but factory code in production lot code is changed.

・As for the PKG assembly, there is no change of assembly site and assembly material compared

with current OITA product.


Request for Approval

< Request >

The changeover to the manufacturing factory and new bonding

wire will be implemented after we confirm through sufficient

evaluations based on our internal qualification results that this

change will cause no problem.

If you have requests for the relevant document/data or any

questions, please inform our Sales representatives nearest you.

We would appreciate it if you would provide us with first

response to this change by The end of November,30 2014.

PROCESS CHANGE NOTIFICATION - Mouser Electronics · Nch Vth[V] Nch Idr[μA/μm] Pch Vth[V] Pch...

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