Proceedings Contents Shanghai World Expo Exhibition and ...

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Proceedings Contents 27 – 29 June 2017, Shanghai, China Power for Efficiency! Organizer: Guangzhou Guangya Messe Frankfurt Co Ltd. Guangzhou, China www.pcimasia-expo.com

Transcript of Proceedings Contents Shanghai World Expo Exhibition and ...

Page 1: Proceedings Contents Shanghai World Expo Exhibition and ...

Proceedings Contents

27 – 29 June 2017, Shanghai, China

Conference Program

28 30 June 2016Shanghai World Expo Exhibition and Convention CenterShanghai, China

Conference from 28-29 June 2016

2 Seminars on 30 June 2016

Exhibitor forum from 28-30 June 2016

Power for Efficiency!

Organizer: Guangzhou Guangya Messe Frankfurt Co Ltd.Guangzhou, Chinawww.pcimasia-expo.com

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Chairman:Leo Lorenz, ECPE, D

Enrique J. Dede, ETSE University of Valencia, ENaoto Fujishima, Fuji Electric, J

Yongdong Li, Tsinghua University, CNJinjun Liu, Xi´an Jiaotong University, CN

Gourab Majumdar, Mitsubishi Electric Corporation, JNorbert Pluschke, Semikron, HK

Xinbo Ruan, Huazhong University of Science and Technology, CNZhihong Wu, Tongjii University, CNDehong Xu, Zhejiang University, CN

Dianguo Xu, Harbin Institute of Technology, CNJianping Ying, Delta Electronics, CN

Dapeng Zheng, Shenzhen Hopewind Electric, CN

Organizer:Guangzhou Guangya Messe Frankfurt Co Ltd.

Room A2001, Center Plaza, No.161 Linhe Road West, Tianhe District, Guangzhou, China

Partner:Mesago Messe Frankfurt GmbH

Rotebuehlstrasse 83-8570178 Stuttgart, Germany

www.pcimasia-expo.com

Bibliographic Information of the German National LibraryThe German National Library lists this publication in the National Bibliography; detailed bibliographic data are available on the Internet at http://dnb.dnb.de.

ISBN 978-3-8007-4429-9This edition is published as a CD-ROM.

© 2017 VDE VERLAG GMBH · Berlin · Offenbach www.vde-verlag.de

All rights reserved. Any utilization in breach of the strict limits of copyright law, without the prior approval of the publisher, is prohibited. Reproductions of common names, brand names, trademarks etc. in this publication are not subject to the acceptance that these names could be regarded as free or could be used by anyone, even without particular marking, in the sense of the trademark and brand protection legislation. Publication does not imply that the solutions described are not protected by intellectual property rights (e. g. patents and utility models). The publisher assumes no liability for the correctness and practicability of the programs, cir-cuits, and any other arrangements and instructions published, nor for the correctness of the technical content of this publication. The up-to-date valid versions of the relevant statutory and official regulations and technical regulations (e.g. VDE body of regulations) have to be respected.

Production: DMS – Disk Media Service, Berlin, Germany Produced in Germany

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Invitation General Conference Director

Dear PCIM Asia participants,

It´s our great pleasure to welcome you to the PCIM Asia 2017 Conference and Exhibition.

International meeting point for power electronic experts in the Chinese market

PCIM Asia has grown up to be a technical platform with success and strong interests for innovations in the field of power electronics. It is the ideal forum to meet specialists from various fields of applications in industry and automotive electronics. My welcome message goes especially to the authors of oral and poster papers. Over the years PCIM Asia has been developed to the most prestigious forum to exchange information in important power electronics technologies. It is a key technical platform for researchers and product development engineers as well as decision makers and marketing specialists to detect new attractive business opportunities, and I am convinced that you will enjoy and appreciate this year’s event.

Attractive conference program

In six oral sessions and two poster sessions, the PCIM Asia Conference will address key development trends in wide bandgap power electronics, advanced power semiconductor devices, automotive power electronics, new power conversion concepts and renewable energy technologies. The two keynote presentations will cover the following topics: "Hybrid Renewable Energy Standalone Systems“ by Prof. Ambrish Chandra, ETS, Canada and "The Characteristics of Advanced Power Electronics Devices for High Performance Power Converters“ by Prof. Xiangning He, Zhejiang University, China. Further conference highlights will address advanced technologies for filter design and passive devices for MMC topologies. In particular new packaging concepts will be discussed to manage ultrafast switching devices in power electronic converters.

I am convinced that with this high level technical program and expert discussions, this years’ PCIM Asia Conference will provide you with an overview of new milestones in power electronic system developments and inspire you to pursue new business opportunities.

I look forward to welcoming you in Shanghai.

Leo Lorenz General Conference Director Germany

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Advisory Board and Technical Committee PCIM Asia 2017

Chairman

Prof. Leo Lorenz, ECPE, D

Board of Directors

Prof. Dr. Enrique J. Dede, ETSE University of Valencia, E Dr. Naoto Fujishima, Fuji Electric, J Prof. Yongdong Li, Tsinghua University, CN Prof. Dr. Jinjun Liu, Xi´an Jiaotong University, CN Dr. Gourab Majumdar, Mitsubishi Electric Corporation, J Norbert Pluschke, Semikron, HK Prof. Xinbo Ruan, Huazhong University of Science and Technology, CN Prof. Zhihong Wu, Tongji University, CN Prof. Dehong Xu, Zhejiang University, CN Prof. Dianguo Xu, Harbin Institute of Technology, CN Dr. Jianping Ying, Delta Electronics, CN Dr. Dapeng Zheng, Shenzhen Hopewind Electric, CN

Technical Committee

Jean-Paul Beaudet, Schneider Electric, F Prof. Min Chen, Zhejiang University, CN Roger Chen, Vincotech, CN Dr. Youngchul Choi, ON Semiconductor, USA Dr. Chuang Fu, China Southern Power Grid Technology Research Center, CN Prof. Yong Kang, Huazhong University of Science and Technology, CN Romeo Letor, STMicroeletronics, IT Prof. Meiqin Mao, Hefei University of Technology, CN Abhijit D. Pathak, International Rectifier, USA Prof. Tianhao Tang, Shanghai Maritime University, CN Prof. Gaolin Wang, Harbin Institute of Technology, CN Patrick Wang, ON Semiconductor, F Prof. Xuhui Wen, Chinese Academy of Science, CN Dr. James Yin-Chin Wu, Hosonic Electronic Corporation Group, TW Dr. Lie Xu, Tsinghua University, CN Prof. Xing Zhang, Hefei University of Technology, CN

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Table of Content PCIM Asia 2017 Special Session: Wide Bandgap Power Electronics High Efficiency Control Method for Non-Isolated Three-Port DC/DC Converter ................... 13 Yunchao Han, Friedrich-Alexander-University Erlangen-Nuremberg, Germany Julian Kaiser, Fraunhofer IISB, Erlangen, Germany Leopold Ott, Fraunhofer IISB, Erlangen, Germany Matthias Schulz, Fraunhofer IISB, Erlangen, Germany Fabian Fersterra, Fraunhofer IISB, Erlangen, Germany Kilian Gosses, Fraunhofer IISB, Erlangen, Germany Bernd Wunder, Fraunhofer IISB, Erlangen, Germany Martin, März, Fraunhofer IISB, Erlangen, Germany Impact of SiC on Power Supplies and Drives to Save Energy and Materials ....................... 20 Tatsuhiko Fujihira, Fuji Electric Co., Ltd., Japan Naoto Fujishima, Fuji Electric Co., Ltd., Japan Hiroshi Kimura, Fuji Electric Co., Ltd., Japan Masahiro Kikuchi, Fuji Electric Co., Ltd., Japan Hidenori Takahashi, Fuji Electric Co., Ltd., Japan Osamu Ikawa, Fuji Electric Co., Ltd., Japan Masahito Otsuki, Fuji Electric Co., Ltd., Japan Yasushi Matsumoto, Fuji Electric Co., Ltd., Japan GaN Gate Injection Transistor for Reliable Power Supply Solution ...................................... 28 Howard Sin Ban How, Panasonic Industrial Devices Semiconductor Asia, Singapore Recent progress in SiC power devices for power electronics appiications ........................... 35 Hiroshi Watanabe, Mitsubishi Electric, Japan Keynote Hybrid Renewable Energy Standalone Systems ...................................................................... 36 Ambrish Chandra, École de Technologie Supérieure (ETS), Canada Poster Session Three-dimensional temperature field analysis of Wind power busbar slot connector .......... 37 Xinbo Huang, Xi’an Polytechnic University, China Jie Zhang, Xi’an Polytechnic University, China Yi Tian, Xidian University, China An application of new generation IGBT module on 3-level I-type NPC PV-inverter .............. 42 Yuancheng Zhang, Mitsubishi Electric & Electronic, China Nobuya Nishida, Power Device Works, Mitsubishi Electric, Japan Xiankui Ma, Mitsubishi Electric & Electronic, China Gaosheng Song, Mitsubishi Electric & Electronic, China

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Application Perspective Based IGBT5 Module Performance .................................................. 46 Zhao Zhenbo, Infineon Technologies, China Chiang Weishih, Infineon Technologies, China Qin Haiyang, Shanghai Maritime University, China 7th Generation IGBT Modules Integrating Converter Inverter Brake ..................................... 52 Bo Hu, Mitsubishi Electric & Electronics, China Xiankui Ma, Mitsubishi Electric & Electronics, China Gaosheng Song, Mitsubishi Electric & Electronics, China Influence of parasitic resistance on current sharing of IGBT module ................................... 58 Longfei, Xie, CRRC Yongji Electric, China Na, Ye, CRRC Yongji Electric, China Lin, Cao, CRRC Yongji Electric, China Kai,Yu,, CRRC Yongji Electric, China Research on Reversing Current Phenomenon of the Dual-source Driver for SiC BJT ......... 62 Haihong Qin, Nanjing University of Aeronautics and Astronautics, China Qing Liu, Nanjing University of Aeronautics and Astronautics, China Ying Zhang, Nanjing University of Aeronautics and Astronautics, China Junyue Yu, Nanjing University of Aeronautics and Astronautics, China Dan Wang, Nanjing University of Aeronautics and Astronautics, China Chaohui Zhao, Shanghai Electric Machinery College, China Evaluating Self-commutated Reverse Conduction Characterization of Enhancement- Mode GaN HEMT for Application .............................................................................................. 68 Haihong Qin, Nanjing University of Aeronautics and Astronautics, China Ying Zhang, Nanjing University of Aeronautics and Astronautics, China Dan Wang, Nanjing University of Aeronautics and Astronautics, China Dafeng Fu, Nanjing University of Aeronautics and Astronautics, China Chaohui Zhao, Shanghai DianJi University, China Experimental Study of the Factors Affecting on SiC MOSFET Switching Performance ....... 74

Junji Ke, North China Electric Power University, China Peng Sun, North China Electric Power University, China Xiwei Zhang, North China Electric Power University, China Zhibin Zhao, North China Electric Power University, China Xiang Cui, North China Electric Power University, China

Advanced Cooling Solutions of High Power Automotive Module .......................................... 82 Fang Qi, Dynex Semiconductor, UK Yangang Wang, Dynex Semiconductor, UK Christiana Bob-Manuel, Dynex Semiconductor, UK Helong Li, Dynex Semiconductor, UK Steve Jones, Dynex Semiconductor, UK Bo Li, University of Nottingham, UK Yiyi Chen, University of Nottingham, UK Yuying Yan, University of Nottingham, UK

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Advanced IGBT and Packaging Technologies for Next Generation High Power Applications ............................................................................................................................... 85 Evgeny Tsyplakov, ABB Switzerland, Switzerland Franc Dugal, ABB Switzerland, Switzerland Andreas Baschnagel, ABB Switzerland, Switzerland Munaf Rahimo, ABB Switzerland, Switzerland Arnost Kopta, ABB Switzerland, Switzerland Makan Chen, ABB Switzerland, Switzerland Chiara Corvasce, ABB Switzerland, Switzerland Maxi Andenna, ABB Switzerland, Switzerland Fabian Fischer, ABB Switzerland, Switzerland Samuel Hartmann, ABB Switzerland, Switzerland Ag paste and application in power devices ............................................................................. 94 Jinting Jiu, Senju Metal Industry / Osaka University, Japan Tetsu Takemasa, Senju Metal Industry, Japan Minoru Ueshima, Senju Metal Industry, Japan Katsuaki Suganuma, Osaka University, Japan Advanced Power Semiconductors I DIPIPMTM for Automotive Application ....................................................................................... 99 Yazhe Wang, Mitsubishi Electric Corporation Power Device Works, Japan Upgrading of output power by newly developed 7th generation IGBT and package technologies ............................................................................................................................. 103 K. Yoshida, Fuji Electric, Japan S. Yoshiwatari, Fuji Electric, Japan M. Sawada, Y.Onozawa, Fuji Electric, Japan M. Isozaki, Fuji Electric, Japan S. Okita, Fuji Electric, Japan J. Li, Fuji Electric, China S. Chen, Fuji Electric, China O. Ikawa, Fuji Electric, Japan IGBT5 based power module for high efficient PFC and inverter applications ..................... 109 Wu Ding, Vincotech, China Performance Evaluation of Split NPC 3L Modules for 1500 VDC Central Solar Inverter up to 1.5 MW ............................................................................................................................. 112 Wei Jing, SEMIKRON Electronics, China Ingo Rabl, SEMIKRON Elektronik, Germany Peter Beckedahl, SEMIKRON Elektronik, Germany Norbert Pluschke, SEMIKRON, China 94 mm Reverse-Conducting IGCT for High Power and Low Losses Applications .............. 118 Tobias Wikström, ABB Switzerland, Switzerland Maria Alexandrova, ABB Switzerland, Switzerland Vasilis Kappatos, ABB Switzerland, Switzerland Christian Winter, ABB Switzerland, Switzerland Evgeny Tsyplakov, ABB Switzerland, Switzerland Madhan Mohan, ABB Switzerland, Switzerland Makan Chen, ABB Switzerland, Switzerland

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Automotive Power Electronics Modularized Equalization Circuit Based on DC-DC Chopper for Series-Connected Lithium-Ion Battery packs ....................................................................................................... 124 Yewen WEI, China Three Gorges University, China Yingzhi LI, China Three Gorges University, China Bin Cao, China Three Gorges University, China Shuailong DAI, China Three Gorges University, China A 500Arms 48 V power stage of BSG inverter with TO-Leadless MOSFET for Mild HEV ... 130 Rui Rong, Infineon Integrated Circuit, China RenBo Wang, Infineon Technologies, China 700 kVA/L power density IGBT module for xEV power train ................................................. 137 Akihiro Osawa, Fuji Electric, Japan Keiichi Higuchi, Fuji Electric, Japan Akio Kitamura, Fuji Electric, Japan Daisuke Inoue, Fuji Electric, Japan Yoshikazu Takamiya, Fuji Electric, Japan Souichi Yoshida, Fuji Electric, Japan Hiromichi Gohara, Fuji Electric, Japan Masahito Otsuki, Fuji Electric, Japan A Double-Sided Cooling Package Design with Pinfin ........................................................... 144

Puqi Ning, University of Chinese Academy of Sciences, China, Xuhui Wen, Collaborative Innovation Center of Electric Vehicles in Beijing, China

Enhanced Power Electronics System for High-Performance Testing of Motor Control Units in a Power HIL Environment .......................................................................................... 151 Gerrit Meyer, dSPACE, Germany Advanced Power Semiconductors II New Concept Package with 1st Generation Trench Gate SiC MOSFETs ............................. 159 Yoshinori Iwasaki, Fuji Electric, Japan Mikiya Chounabayashi, Fuji Electric, Japan Masayoshi Nakazawa, Fuji Electric, Japan Susumu Iwamoto, Fuji Electric, Japan Yasuhiko Oonishi, Fuji Electric, Japan Motohito Hori, Fuji Electric, Japan Hideaki Kakiki, Fuji Electric, Japan Osamu Ikawa, Fuji Electric, Japan Jun Li, Fuji Electric, China A novel high thermal performance insulated package takes power integration to the next level ................................................................................................................................... 166 Omar Harmon, Infineon Technologies, Austria Fabio Brucchi, Infineon Technologies, Italy Christian Kasztelan, Infineon Technologies, Germany Philipp Seng, Infineon Technologies, Germany

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How to apply the better performance of SiC modules .......................................................... 174 Xiankui Ma, Hefei University of Technology – Mitsubishi Electric Joint Laboratory, China Jianfei Li, Sineng Electric, Wuxi, China Gaosheng Song, Hefei University of Technology – Mitsubishi Electric Joint Laboratory, China Xing Zhang, Hefei University of Technology – Mitsubishi Electric Joint Laboratory, China Comparison of 6.78 MHz Amplifier Topologies for 33 W, Highly Resonant Wireless Power Transfer ......................................................................................................................... 179 Michael de Rooij, Efficient Power Conversion, U.S.A Yuanzhe Zhang, Efficient Power Conversion, U.S.A Characteristics and Switching Patterns of Si/SiC Hybrid Switch ......................................... 186

Haihong Qin, Nanjing University of Aeronautics and Astronautics, China Dan Wang, Nanjing University of Aeronautics and Astronautics, China Ying Zhang, Nanjing University of Aeronautics and Astronautics, China Dafeng Fu, Nanjing University of Aeronautics and Astronautics, China Chaohui Zhao, Shanghai DianJi University, China

Keynote The Characteristics of Advanced Power Electronics Devices for High Performance Power Converters .................................................................................................................... 192 Xiangning He, Zhejiang University, China Sideng Hu, Zhejiang University, China Poster Session Contactless Rotating Power Transfer System with Vertical Maglev Rotary Inductive Coupled Structure .................................................................................................................... 193

Jia-You Lee, National Cheng Kung University, Taiwan Chong-Yu Chen, National Cheng Kung University, Taiwan Yu-Min Sun, National Cheng Kung University, Taiwan Jeng-Hung Chen, National Cheng Kung University, Taiwan

RC-IGBT Based Transfer Molded IPM for Home Appliance Application .............................. 201 Hongguang Huang, Mitsubishi Electric & Electronics, China, Ming Shang, Power Device Works, Mitsubishi Electric, Japan Xiaoling Wang, Mitsubishi Electric & Electronics, China Hongtao He, Mitsubishi Electric & Electronics, China A Genetic Algorithm High Power Density Converter System Packing Method ................... 205 Puqi Ning, University of Chinese Academy of Sciences, China Xuhui Wen, Collaborative Innovation Center of Electric Vehicles in Beijing, China Analysis of power supply from high-voltage side for electronic Current Transformer ...... 210 Yi Tian, Xi’an Polytechnic University & Xidian University, China Xinbo Huang, Xi’an Polytechnic University, China Wenchao Tian, Xidian University, China Xiang Wang, Xi’an Polytechnic University, China

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A Large Input Voltage Range 1 MHz Full Converter with 95 % Peak Efficiency for Aircraft Applications ................................................................................................................ 216 Nicolas Quentin, University of Lyon/Ampere/Safran Group, France Remi Perrin, INSA Lyon/Ampere, France Christian Martin, University of Lyon/Ampere, France Charles Joubert, University of Lyon/Ampere, France Louis Grimaud, Safran Group, France

An 820 A 750 V Compact IGBT Module with New Chip Technology for Automotive Inverter Application ................................................................................................................. 223 Rui Rong, Infineon Integrated Circuit, China YaoHua He, Infineon Technologies, China

Extra-compact 650 V / 600 A IGBT Power Module (PM) for EV Inverter Application ........... 228 Hui Han, Mitsubishi Electric & Electronics, China Gaosheng Song, Mitsubishi Electric & Electronics, China Hongtao He, Mitsubishi Electric & Electronics, China

Research on Full-Bridge Static Compensator with Small-Capacitor Equipped and Its Application ............................................................................................................................... 229 Yewen Wei, China Three Gorges University, China Bin Cao, China Three Gorges University, China Yingzhi Li, China Three Gorges University, China Shuailong Dai, China Three Gorges University, China

System power analytic management 220 V AC with cloud Computing Services applying internet of things technology .................................................................................. 235 Samuel Enrique Muñoz Cucho, University National San Luis Gonzaga de Ica, Ica Avenue los Maestros, Perú

A Novel Droop Control of Rectifier Parallel System for Constant DC Bus Voltage ............. 241 Wenshan Li, University of Chinese Academy of Science, China Jian Zhang, University of Chinese Academy of Science, China Xuhui Wen, Chinese Academy of Sciences and Collaborative Innovation Center of Electric Vehicles in Beijing, China

A Proposal of Control Method for Regulating Capacitor Voltages of Neutral Point Clamped Modular Multilevel Converter .................................................................................. 246 Ryuta Hasegawa, Toshiba, Japan Shota Tashiro, Toshiba, Japan Daichi Suzuki, Toshiba, Japan

DC-link Impedance Model of Voltage Source Converter ....................................................... 252 Xue Danhong, Xi'an Jiaotong University, China Liu Jinjun, Xi'an Jiaotong University, China Liu Teng, Xi'an Jiaotong University, China

High Power Compact Automotive IGBT Module with Planar Packaging Technology ......... 255 Yangang Wang, Dynex Semiconductor, United Kingdom Yun Li, Dynex Semiconductor, United Kingdom Yibo Wu, CRRC Times Electric, China Xiaoping Dai, Dynex Semiconductor, United Kingdom Steve Jones, Dynex Semiconductor, United Kingdom Guoyou Liu, CRRC Times Electric, China

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Renewable Energy and Smart Grids Implementation of Super Real-time Simulation for PV System ............................................ 260

Meiqin Mao, Hefei University of Technology, China Xing Zhang, Hefei University of Technology, China Yong Ding, Hefei University of Technology, China

Liuchen Chang, University of New Brunswick Fredericton, Canada Hanjie Shi, Hefei University of Technology, China, Jing Ma, State Grid Anhui Economic Research Institute, China Jiayin Xu, State Grid Anhui Economic Research Institute, China A New High Power Solar Inverter Topology with Reduced DC Potential for Enhanced Reliability .................................................................................................................................. 267

K. Ramachandra Sekhar, Hitachi, India Aalok Bhatt, Hitachi Hirel Power Electronics, India Tetsuya Kawashima, Hitachi, India

Principle of Power Electronic Converter ................................................................................ 273 Jingwen Xie, Schneider Electric, Shanghai, China, Yangguang Yan, Nanjing University of Aeronautics & Astronautics, Nanjing, China Semiconductor Solutions to Support High-Power Battery Charging Systems in Electric Mobility Scenarios ..................................................................................................... 282 Martin Schulz, Infineon Technologies, Germany Frequency-Dependent Droop Control for Distributed Generation in Microgrids ................ 286 Yang Qi, Nanyang Technological University, Singapore Jingyang Fang, Nanyang Technological University, Singapore Yi Tang, Nanyang Technological University, Singapore Power Conversion Optimization Design of Parameters for a Novel High Gain CSI with Improved SVPWM ..... 293 Meiqin Mao, Hefei University of Technology, China Yandong Li, Hefei University of Technology, China Wenhan Wu, Hefei University of Technology, China Liuchen Chang, University of New Brunswick Fredericton, Canada Jing Ma, State Grid Anhui Economic Research Institute, China Jiayin Xu, State Grid Anhui Economic Research Institute, China High-efficiency Converter Technologies for Advanced Air Conditioner .............................. 300 Akihiro Ishigaya, Toshiba Carrier, Japan Naohito Kamiya, Toshiba Carrier, Japan Yohei Kubota, Toshiba Carrier, Japan Masayuki Yoshimura, Toshiba Carrier, Japan

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Multi-Objective Control Strategy for Residential DC Distribution System Based on PIMPC ....................................................................................................................................... 306 Meiqin Mao, Hefei University of Technology, China Hanjie Shi, Hefei University of Technology, China Yong Ding, Hefei University of Technology, China Liuchen Chang, Hefei University of Technology, China Yu Chen, State Grid Anhui Economic Research Institute, China Jing Ma, State Grid Anhui Economic Research Institute, China 6-in-1 Silicon Carbide (SiC) MOSFET Power Module for EV/HEV Inverters ......................... 314 Fumio Wada, Mitsubishi Electric Corp, Japan Noboru Miyamoto, Mitsubishi Electric Corp, Japan Kentaro Yoshida, Mitsubishi Electric Corp, Japan Shinsuke Godo, Mitsubishi Electric Corp, Japan A New Type Single-Stage Three-Phase Inverter with Star-Buck Converter Structure ........ 318 Jia-You Lee, Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan Jheng-Hung Chen, Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan

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Authors Index PCIM Asia 2017

Alexandrova Maria ABB Switzerland CH

Andenna Maxi ABB Switzerland CH

Baschnagel Andreas ABB Switzerland CH

Bhatt Aalok Hitachi Hirel power electronics IND

Bin Cao China Three Gorges University CN

Bob-Manuel Christiana Dynex Semiconductor UK

Brucchi Fabio Infineon Technologies ITA

Cao Lin CRRC Times Electric CN

CAO Bin China Three Gorges University CN

Chandra Ambrish École de Technologie Supérieure (ETS) CA

Chang Liuchen University of New Brunswick Fredericton / Hefei University of Technology

CA

Chen Yu State Grid Anhui Economic Research Institute CN

Chen Song Fuji Electric CN

Chen Makan ABB Switzerland CH

Chen Chong-Yu National Cheng Kung University TWN

Chen Jeng-Hung National Cheng Kung University TWN

Chen Yiyi University of Nottingham UK

Chounabayashi Mikiya Fuji Electric JP

Chiang Weishih Infineon Technologies CN

Corvasce Chiara ABB Switzerland CH

Cui Xiang North China Electric Power University CN

Dai Shuailong China Three Gorges University CN

Dai Xiaoping Dynex Semiconductor UK

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de Rooij Michael Efficient Power Conversion US

Ding Yong Hefei University of Technology CN

Dugal Franc ABB Switzerland CH

Evgeny Tsyplakov ABB Switzerland CH

Fang Jingyang Nanyang Technological University SG

Fersterra Fabian Fraunhofer IISB GER

Fischer Fabian ABB Switzerland CH

Fu Dafeng Nanjing University of Aeronautics and Astronautics CN

Fujihira Tatsuhiko Fuji Electric JP

Fujishima Naoto Fuji Electric JP

Godo Shinsuke Mitsubishi Electric JP

Gohara Hiromichi Fuji Electric JP

Gosses Kilian Fraunhofer IISB GER

Grimaud Louis Safran Group FRA

Haiyang Qin Shanghai Maritime University CN

Han Hui Mitsubishi Electric & Electronic CN

Han Yunchao Friedrich-Alexander-University Erlangen-Nuremberg

GER

Harmon Omar Infineon Technologies AU

Hartmann Samuel ABB Switzerland CH

Hasegawa Ryuta Toshiba JP

He YaoHua Infineon Technologies CN

He Hongtao Mitsubishi Electric & Electronic CN

He Hongtao Mitsubishi Electric & Electronic CN

He Xiangning Zhejiang University CN

Higuchi Keiichi Fuji Electric JP

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Hori Motohito Fuji Electric JP

Hu Bo Mitsubishi Electric & Electronic CN

Hu Sideng Zhejiang University CN

Huang Hongguang Mitsubishi Electric & Electronic CN

Huang Xinbo Xi’an Polytechnic University CN

Ikawa Osamu Fuji Electric JP

Inoue Daisuke Fuji Electric JP

Ishigaya Akihiro Toshiba Carrier JP

Isozaki M. Fuji Electric JP

Iwamoto Susumu Fuji Electric JP

Iwasaki Yoshinori Fuji Electric JP

Jiu Jinting Senju Metal Industry / Osaka University JP

Jones Steve Dynex Semiconductor UK

Joubert Charles University of Lyon/Ampere FRA

Kai Yu CRRC Times Electric CN

Kaiser Julian Fraunhofer IISB GER

Kakiki Hideaki Fuji Electric JP

Kamiya Naohito Toshiba Carrier JP

Kappatos Vasilis ABB Switzerland CH

Kasztelan Christian Infineon Technologies GER

Kawashima Tetsuya Hitachi India Pvt. Ltd. IND

Ke Junji North China Electric Power University CN

Kikuchi Masahiro Fuji Electric JP

Kimura Hiroshi Fuji Electric JP

Kitamura Akio Fuji Electric JP

Kopta Arnost ABB Switzerland CH

Kubota Yohei Toshiba Carrier JP

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Lee Jia-You National Cheng Kung University TWN

Li Yandong Hefei University of Technology CN

Li Yingzhi China Three Gorges University CN

Li Jun Fuji Electric CN

Li Jianfei Sineng Electric CN

Li Wenshan University of Chinese Academy of Science CN

Li Bo University of Nottingham UK

Li Helong Dynex Semiconductor UK

Li Yun Dynex Semiconductor UK

Li Yingzhi China Three Gorges University CN

Liu Guoyou CRRC Times Electric CN

Liu Junjun Xi'an Jiaotong University CN

Liu Teng Xi'an Jiaotong University CN

Liu Qing Nanjing University of Aeronautics and Astronautics CN

Ma Jing State Grid Anhui Economic Research Institute CN

Ma Xiankui Mitsubishi Electric & Electronic / Hefei University of Technology - Mitsubishi Electric Joint Laboratory

CN

Mao Meiqin Hefei University of Technology CN

Martin Christian University of Lyon/Ampere FRA

März Martin Fraunhofer IISB GER

Matsumoto Yasushi Fuji Electric JP

Meyer Gerrit dSPACE GER

Miyamoto Noboru Mitsubishi Electric JP

Mohan Madhan Semiconductors CH

Nakazawa Masayoshi Fuji Electric JP

Ning Puqi University of Chinese Academy of Sciences CN

Nishida Nobuya Mitsubishi Electric JP

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Okita S. Fuji Electric JP

Oonishi Yasuhiko Fuji Electric JP

Osawa Akihiro Fuji Electric JP

Otsuki Masahito Fuji Electric JP

Ott Leopold Fraunhofer IISB GER

Perrin Remi INSA Lyon/Ampere FRA

Peter Beckedahl SEMIKRON GER

Pluschke Norbert SEMIKRON CN

Qi Yang Nanyang Technological University SG

Qi Fang Dynex Semiconductor UK

Qin Haihong Nanjing University of Aeronautics and Astronautics CN

Quentin Nicolas University of Lyon/Ampere/Safran Group FRA

Rabl Ingo SEMIKRON GER

Rahimo Munaf ABB Switzerland CH

Rong Rui Infineon Integrated Circuit CN

Samuel Enrique Muñoz Cucho University National San Luis Gonzaga de Ica Ica Avenue los maestros

PE

Sawada M. Fuji Electric JP

Schulz Matthias Fraunhofer IISB GER

Schulz Martin Infineon Technologies GER

Sekhar K. Ramachandra

Hitachi India Pvt. Ltd. IND

Seng Philipp Infineon Technologies GER

Shang Ming Mitsubishi Electric JP

Shi Hanjie Hefei University of Technology CN

Sin Howard Panasonic Industrial Devices Semiconductor Asia SG

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Song Gaosheng Mitsubishi Electric & Electronic / Hefei University of Technology – Mitsubishi Electric Joint Laboratory

CN

Suganuma Katsuaki Osaka University JP

Sun Peng North China Electric Power University CN

Sun Yu-Min National Cheng Kung University TWN

Suzuki Daichi Toshiba JP

Takahashi Hidenori Fuji Electric JP

Takamiya Yoshikazu Fuji Electric JP

Takemasa Tetsu Senju Metal Industry JP

Tang Yi Nanyang Technological University SG

Tashiro Shota Toshiba JP

Tian Yi Xi’an Polytechnic University & Xidian University CN

Tian Wenchao Xidian University CN

Tobias Wikström ABB Switzerland CH

Tsyplakov Evgeny ABB Switzerland CH

Ueshima Minoru Senju Metal Industry JP

Wada Fumio Mitsubishi Electric JP

WANG Renbo Infineon Technologies CN

Wang Xiaoling Mitsubishi Electric & Electronic CN

Wang Dan Nanjing University of Aeronautics and Astronautics CN

Wang Xiang Xi’an Polytechnic University CN

Wang Yazhe Mitsubishi Electric JP

Wang Yangang Dynex Semiconductor UK

Watanabe Hiroshi Mitsubishi Electric JP

WEI Yewen China Three Gorges University CN

Wei Jing SEMIKRON CN

Wei Yewen China Three Gorges University CN

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Wen Xuhui Chinese Academy of Sciences and Collaborative Innovation Center of Electric Vehicles in Beijing

CN

Winter Christian ABB Switzerland CH

Wu Wenhan Hefei University of Technology CN

Wu Yibo CRRC Times Electric CN

Wu Ding Vincotech CN

Wunder Bernd Fraunhofer IISB GER

Xie Longfei CRRC Times Electric CN

Xie Jingwen Schneider Electric CN

Xu Jiayin State Grid Anhui Economic Research Institute CN

Xu Jiayin State Grid Anhui Economic Research Institute CN

Xue Danhong Xi'an Jiaotong University CN

Yan Yuying University of Nottingham UK

Yan Yangguang Nanjing University of Aeronautics & Astronautics CN

Ye Na CRRC Times Electric CN

Yoshida Kentaro Mitsubishi Electric JP

Yoshida K. Fuji Electric JP

Yoshida Souichi Fuji Electric JP

Yoshimura Masayuki Toshiba Carrier JP

Yoshiwatari S. Fuji Electric JP

Yu Junyue Nanjing University of Aeronautics and Astronautics CN

Zhang Xing Hefei University of Technology CN

Zhang Yuancheng Mitsubishi Electric & Electronic CN

Zhang Ying Nanjing University of Aeronautics and Astronautics CN

Zhang Xiwei North China Electric Power University CN

Zhang Jian University of Chinese Academy of Science CN

Zhang Jie Xi’an Polytechnic University CN

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Zhang Yuanzhe Efficient Power Conversion US

Zhao Zhibin North China Electric Power University CN

Zhao Chaohui Shanghai DianJi University CN

Zhao Zhenbo Infineon Technologies CN