Preparing Templated Silicon Surfaces for III-V Epitaxy Vazquez... · Clean interface avoids defects...
16
Preparing Templated Silicon Surfaces for III-V Epitaxy By: Didiel Vazquez-Morales Major: Chemical Engineer Oxnard College and Ventura College Mentor: Daniel Pennachio Faculty advisor: Dr. Palmstrøm 1
Transcript of Preparing Templated Silicon Surfaces for III-V Epitaxy Vazquez... · Clean interface avoids defects...
Preparing Templated Silicon Surfaces for III-V Epitaxy
By:DidielVazquez-Morales
Major:ChemicalEngineer
OxnardCollegeandVenturaCollege
Mentor:DanielPennachio
Facultyadvisor:Dr.Palmstrøm
1
hEp://www.visiblediodelasers.com/wpcontent/uploads/laserdiode11.jpg
Reducingwasteenergyduringdatatransferusingphotonics• Electricalwiresproduceheat
• Siliconischeapandusedinelectronicdevices
• Bigproblem:SiliconisaninefficientlightemiEer
• III-Vmaterialsusedinlaserstoemitlight
• SoluMon:III-VmaterialonSi hEps://www.semiwiki.com/forum/aEachments/content/aEachments/
11601d1405647406-300mm-450mm-wafer-comparison-jpg
hEp://tech.blorge.com/wp-content/uploads/2014/04/Samsung-Galaxy-S4-vs-iPhone-5.jpg III-Vmaterials
hEp://www.plyojump.com/classes/images/hardware/transistor_pcb.jpg
CleaninterfaceavoidsdefectsonIII-Vcrystals• GrowIII-Vmaterialontopofthesilicon
• ImpuriMesonthesiliconsurface• SelecMvelycleanthewafertoremovethenaMveoxide
• GrowthIII-Vepitaxyonselectedareas
Si:diamondcrystalstructure
III-V:Zincblendecrystalstructure
Si
III-Vmaterial
SiImpuri,es
CourtesyofDanPennachio
CleaninterfaceavoidsdefectsonIII-Vcrystals• GrowIII-Vmaterialontopofthesilicon
• ImpuriMesonthesiliconsurface• SelecMvelycleanthewafertoremovethenaMveoxide
• GrowthIII-Vepitaxyonselectedareas
Si Si
III-VMaterial
Si:diamondcrystalstructure
III-V:Zincblendecrystalstructure
CourtesyofDanPennachio
5SiSi
III-Vmaterial
Si
CleaningProcedures:
Anneal:• Removeoxygenandcarbonfromsamplesurface
UltraHighVacuum(UHV)
Si
Solvent+Acid
Growing
Outgas&Anneal
NaMveoxideandorganicimpuriMes
Si Acid:• Physicallyremovepartofthesubstrate,naMveoxide
Solvents:• Removeorganic
impuriMesfromthesurface
6
hEp://www.lanl.gov/orgs/nmt/nmtdo/AQarchive/04summer/gifs/XPS2.gif
hEp://www.lanl.gov/orgs/nmt/nmtdo/AQarchive/04summer/XPS.html
X-rayPhotoemissionSpectroscopy(XPS)XPSisconductedinultrahighvacuum(UHV)
TotalEnergy
Kine,cEnergyoftheelectron
BindingEnergy
7
Si
NATIVEOXIDE
SiUHVAnneal1200°C
0
200
400
600
800
1,000
1,200
50150250350450550
Intensity
(C.P.S.)
BindingEnergy(eV)
SurveyXPSSpectrum Outgassed 1200C
Si2sSi2p
O1sC1s
Anneal
8
Si
NATIVEOXIDE
Si
Anneal1200°C
0
200
400
600
800
1,000
1,200
50150250350450550
Intensity
(C.P.S.)
BindingEnergy(eV)
SurveyXPSSpectrum Outgassed 1200C
Si2sSi2p
O1s C1s
Anneal
2
4
6
8
527529531533535537
Intensity
(CPS)
BindingEnergy(eV)
O1sOutgas
1200C
9
5
5.5
6
6.5
7
7.5
8
280282284286288290
Intensity
(CPS)
BindingEnergy(eV)
C1s1200C
Outgas
SiNATIVEOXIDE
Si
Anneal1200°C
0
200
400
600
800
1,000
1,200
50150250350450550
Intensity
(C.P.S.)
BindingEnergy(eV)
SurveyXPSSpectrum Outgassed 1200C
Si2sSi2p
O1s C1s
Anneal
2
4
6
8
527529531533535537
Intensity
(CPS)
BindingEnergy(eV)
O1s
Outgas
10
0
20
40
60
80
100
120
140
160
1 2 3
Area
Substrate
O1sIntegratedPeakAreas
Outgassed Annealed
1
10
1 2 3
Area
Substrate
C1sIntegratedPeakAreas
Outgassed Annealed
Substrate1! Solvent
Substrate2! Photolithography! Acid! Solvent
Substrate3! Solvent! acid
ForallsamplesinUHV! Outgas:~300°Covernight! Anneal:1200°C5minutes
11
Substrate1! Solvent
Substrate2! Photolithography! Acid! Solvent
Substrate3! Solvent! acid
0
20
40
60
80
100
120
140
160
1 2 3
Area
Substrate
O1sIntegratedAreas
Outgassed Annealed
1
10
1 2 3
Area
Substrate
C1sIntegratedAreas
Outgassed Annealed
12
AtomicForceMicroscope(AFM)
Topographicimageofthesurface
Substrate1! Solvent! Outgas! Anneal1200°C
-10
-8
-6
-4
-2
0
2
4
6
8
10
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Height(nm
)
X(μm)
SubstrateSurface
2μm
SiNATIVEOXIDE
13
SiNATIVEOXIDE
Substrate1! Solvent! Outgas! Anneal1200°C
SiNATIVEOXIDE
LowTemperatureSubstrate! Solvent! Outgas! Anneal950°C
Si Si
• Annealroughenedthesurface• Siliconcarbide(SiC)formedbyincompletecarbonremoval.
• Loweringannealto950°C• Whatisgoingtohappento
thesurface?
14
SiNATIVEOXIDELowTemperature
Substrate! Solvent! Outgas! Anneal950°C
Minimizedefectsonthesurface
-10
-5
0
5
10
0 0.5 1 1.5 2 2.5 3 3.5
Height(nm
)X(μm)
SubstrateSurface
-80
-60
-40
-20
0
20
-0.4 0.6 1.6 2.6 3.6 4.6
Height(nm
)
X(μm)
SubstrateSurface
2μm
15
Futureplans:• FindthecorrectMmeandtemperatureforannealtoavoidsurface
roughening• Cleaningsubstrateswithozonebeforeoutgassingtoremovecarbon• RepeatozoneadremoveoxidemulMpleMmestocompletelyremovecarbon
hEp://www.resonateintowellness.com/wp-content/uploads/2016/02/ozone.png
16
Acknowledgements:
