Practical Considerations and Solutions for Temperature ... · BCTM '07. IEEE , 2007, pp. 26-29....
Transcript of Practical Considerations and Solutions for Temperature ... · BCTM '07. IEEE , 2007, pp. 26-29....
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Practical Considerations and Solutions for Temperature-Dependent S-Parameter Measurement for Accurate Parameter Extraction of Advanced RF DevicesAdvanced RF Devices
Gavin Fisher, Application Engineer
Andrej Rumiantsev, Product Marketing Manager
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Agenda
� Why on-wafer thermal?
� Investigation background
� RF characterisation systems
� Mechanical effects of temperature transition – probe
and chuck growthand chuck growth
� Measured electrical effect of thermal transition
� Suggested practical calibration approach with real life
data
� Effect of load resistance variation
� How to use WinCal XE to calibrate, de-embed and
measurement data
� Conclusion
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Why On-Wafer Over-Temperature Test?
� Devices are increasingly temperature dependent
� RF device characterization and modeling need
S-parameters at several temperature and bias points
� Multiple temps between -40 and 125°C common
� ITRS predicts further extension of the temperature range
"Radio frequency and analog/mixed-signal technologies for wireless communications," International Technology Roadmap for Semiconductors, ITRS, p.
36, 2011.
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Example of FoM: fT(T) and fMAX(T)
P. Chevalier, N. Zerounian, B. Barbalat, et al., "On the use of cryogenic measurements to investigate the potential of Si/SiGe:C HBTs for terahertz
operation," in Bipolar/BiCMOS Circuits and Technology Meeting, 2007. BCTM '07. IEEE, 2007, pp. 26-29.
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Motivation: Three Contradictions
� Temperature variation typically requires re-calibration at
every temperature
� Calibration standards are temperature dependent
– Calibration kit (ISS) must be treated appropriately*
� Continuously increasing demand for higher
New challenges hard to deal with
� Continuously increasing demand for higher
characterization frequencies (e.g. mmW range) and
measurement accuracy
A. Rumiantsev and R. Doerner, “Verification of wafer-level calibration accuracy at high temperatures ” in ARFTG Microwave Measurements
Conference-Spring, 71st, 2008, pp. 103-106.
"High-frequency, over-temperature measurements and modeling," in Application Note Beaverton, OR, USA: Cascade Microtech, Inc.
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Agenda
� Why on-wafer thermal?
� Investigation background
� RF thermal test issues
� Mechanical effects of temperature transition – probe
and chuck growthand chuck growth
� Measured electrical effect of thermal transition
� Suggested practical calibration approach with real life
data
� Effect of load resistance variation
� How to use WinCal XE to calibrate, de-embed and
measurement data
� Conclusion
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Intention of Investigation
� Re-visit application note of with modern equipment
and wider measurement range
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Calibration / Measurement Issues and Solutions
Problem Solution
RF Standards temperature dependency
Maintain ambient or measure load resistance*)
Probes misplacement w.r.tstandards on transition
Re-adjuststandards on transition
Probe characteristics vary during the calibration process
Calibration duration to be kept as short as possible.
When is the system stable Use of WinCal stability measurements – automated reports possible
*) A. Rumiantsev, G. Fisher, R. Doerner. “Sensitivity Analysis of Wafer-Level over Temperature RF Calibration”, to be presented ARFTG-80th
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Agenda
� Why on-wafer thermal?
� Investigation background
� RF characterisation systems
� Mechanical effects of temperature transition – probe
and chuck growthand chuck growth
� Measured electrical effect of thermal transition
� Suggested practical calibration approach with real life
data
� Effect of load resistance variation
� How to use WinCal XE to calibrate, de-embed and
measurement data
� Conclusion
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Typical on Wafer Test System - Open
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Typical on Wafer Test System - Closed
� PNA-X vector network
analyzer from Agilent
� Probe positioners
� Probe station with -60°C
to 300°C thermal systemto 300°C thermal system
� Calibration software
� SMU
� eVue digital vision system
� In a temperature
controlled lab
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Engineering on Wafer Test System....
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Typical on Wafer Test System
� 110 GHz Infinity probes
� 104-783 W Band ISS
� 1 mm 24 cm Cables
� Anti-moding absorber
13
� Torque wrench
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Typical on Wafer Test System
� Dry, frost-free environment
� Auxiliary chucks
� Roll-out chuck
� Stable repeatable platen
� TopHat™
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Agenda
� Why on-wafer thermal?
� Investigation background
� RF thermal test issues
� Mechanical effects of temperature transition – probe
and chuck growthand chuck growth
� Measured electrical effect of thermal transition
� Suggested practical calibration approach with real life
data
� Effect of load resistance variation
� How to use WinCal XE to calibrate, de-embed and
measurement data
� Conclusion
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Mechanical Effects of Growth
� Probes grow / retract with temperature chuck in Z
and for E/W orientation in X
� Some movement in Y but comparatively minimal
� For significant thermal changes evaluate theta also
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Mechanical Effects of Growth
� Initial contact set to 19370 at ambient
� Initial separation 474 um
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Mechanical Effects of Growth
� Position of probes not varied on positioner
� Chuck temperature -40°C
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Mechanical Effects of Growth
� Probe contact remade by adjusting chuck position only
� Probes marks are now 550 um apart 76 um delta
� Chuck needs to be raised 37 um higher
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Temperature / Electrical Evaluation Work
� Probe equipped with
K thermocouples
and data logger
� Sensors attached to
probe body,
connector and mountconnector and mount
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System Stability
� Instrumentation itself must be stable
� Use math / memory at selected IF bandwidth
� Temperature control essential
� For Agilent PNA-X “Error-corrected range 23°C ±3°C
with less than 1°C deviation from calibration”with less than 1°C deviation from calibration”
� Thermal system transitioning can effect room
temperature
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System Stability
� System stability can also be measured by conducting a
cal and using a the WinCal monitoring function or by
sequentially conducting open re-measurements
� Example below takes a monitoring measurement every
5 minutes
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System Stability Controlled 27°C
� System was stable for 1 hour at 27 degrees
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Agenda
� Why on-wafer thermal?
� Investigation background
� RF characterisation systems
� Mechanical effects of temperature transition – probe
and chuck growthand chuck growth
� Measured electrical effect of thermal transition
� Suggested practical calibration approach with real life
data
� Effect of load resistance variation
� How to use WinCal XE to calibrate, de-embed and
measurement data
� Conclusion
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Measured Electrical Effect of Thermal Transition
� Following calibration another method used WinCal
sequencing can be used to take repetitive
measurements in normal measurement window
� Of primary interest is to be able to see end of change
to determine if the system is stable
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Measured Electrical Effect of Thermal Transition -40°C to -20°C
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Measured Electrical Effect of Thermal Transition
� WinCal is also capable of showing differences from a
particular trace – Similar to monitoring measurements
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Measured Electrical Effect of Thermal Transition -40°C to -20°C
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Measured Electrical Effect of Thermal Transition
5
6
7
8
%
Difference in S11 at 95 GHz with TimeDuring -40°C to -20°C Transition, %
0
1
2
3
4
5
0 10 20 30 40 50 60
%
Time (Minutes)
Difference in S11 at 95 GHz
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Measured Electrical Effect of Thermal Transition -40°C to 25°C
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Temperature Variation S11 with Chuck / Probe -40°C to 25°C
AR2
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Slide 31
AR2 It will be nice if you could make a better graph out of here: font size 24pt, better readable... Andrej Rumiantsev, 10/24/2012
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Transition +27°C to +75°C S11 Variation
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Transition +27°C to +75°C S11 Variation
AR3
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Slide 33
AR3 It will be nice if you could make a better graph out of here: font size 24pt, better readable... Andrej Rumiantsev, 10/24/2012
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Variation in Phase +25°C to +75°C S11, Degrees
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Phase Change +27°C to +75°C Transition
AR4
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Slide 35
AR4 It will be nice if you could make a better graph out of here: font size 24pt, better readable... Andrej Rumiantsev, 10/24/2012
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Variation in ISS Temperature
AR5
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Slide 36
AR5 It will be nice if you could make a better graph out of here: font size 24pt, better readable... Andrej Rumiantsev, 10/24/2012
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Variation in ISS Temperature
AR6
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Slide 37
AR6 It will be nice if you could make a better graph out of here: font size 24pt, better readable... Andrej Rumiantsev, 10/24/2012
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Temperature Variation of Probe Body / Mount
27 °C
Calibrations
-40 °C
-20 °C
0 °C
jn1
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Slide 38
jn1 Andrej Rumiantsev 24-Oct-12It will be nice if you could make a better graph out of here: font size 24pt, better readable... jnakaya, 10/31/2012
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Thermal transient – 40°C Calibration
� Calibration duration approximately 2 min,
32 frequency points, 100 Hz IF bandwidth
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Agenda
� Why on-wafer thermal?
� Investigation background
� RF characterisation systems
� Mechanical effects of temperature transition – probe
and chuck growthand chuck growth
� Measured electrical effect of thermal transition
� Suggested practical calibration approach with real life
data
� Effect of load resistance variation
� How to use WinCal XE to calibrate, de-embed and
measurement data
� Conclusion
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Over-Temperature Calibration Approach
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Device Measurement Procedure
� Reduced set of -40,-20,0,27,75,125°C measurements
� Instrument set up for speed
– 100 Hz IF (20 or lower preferred)
– 32 points segmented– 32 points segmented
� Biasing done manually for single device 0.85 Vb and 1
Vc for all temp points (peak fmax). Automation possible
with sequencing
� LRRM calibration was used
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Device Measurement Procedure
� Devices measure cold and biased
� Open and Short de-embedding
structures measured for all
temperatures
� Measurements done in raw and � Measurements done in raw and
corrected
� Raw measurements allow post
calibration manipulation with
different calibration sets
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Probe Adjustment
� Load - Probe geometry
adjusted for each temp point
� ISS pre-aligned before
adjustment
� Best results
– Probes at temperature– Probes at temperature
– Move to ISS and adjust
– Move back to wafer until
stable once again
– Full-auto cal at ISS
– Time delay can be
frustrating...
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Device Measurement Procedure
� Make sure LRRM is set to calculate Load inductance at
110 GHz
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WinCal Speed Improvements
� Repeatability and Validation tests turned off
� Validation can be carried out over wafer using “post-correct reflect” – no measurement required
� Monitoring was left off but this could be done as soon as probes over wafer or correct Raw cal open
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Multi-Temperature Calibration Validation
� All calibrations were valid
� Use view data items and drag renamed % to new report
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Dealing with Probe Movement
� Probe movement during the cal can effect thru delay
If open validation fails thru delay can be adjusted
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Failed Monitoring after DUT Measurements (125°C)
� Likely calibration was just too slow
� Calibration period less that 1:30 a must
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Good Monitoring before and after DUT Measurement (75°C)
� If only measuring 1 device monitor after DUT measurement
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Technique to Reduce Drift Effects
� Calibrate at higher than required temperature to suit
expected temperature drop
� Re-monitor at desired temperature set point
� Simulated here - chuck temp was at 113°C for 125°C
calibration
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Actual device Masons Gain Measurements –Correct Calibration
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Actual Device Masons Gain Measurements –Ambient Calibration Applied to Raw Data
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Actual Device data – Effect of Different Calibration Applied to the Same Data
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Using WinCal to View Differences in Measurements with the Same Calibration
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Using WinCal to Compute
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Using Wincal to Compute Differences in Measurements from the Same Calibrations
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Calibration Error Bound Variation
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Agenda
� Why on-wafer thermal?
� Investigation background
� RF characterisation systems
� Mechanical effects of temperature transition – probe
and chuck growthand chuck growth
� Measured electrical effect of thermal transition
� Suggested practical calibration approach with real life
data
� Effect of load resistance variation
� How to use WinCal XE to calibrate, de-embed and
measurement data
� Conclusion
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Effect of Load Resistance Variation
� 27 calibrations loaded
� Error terms compared by varying load resistance by 1%
� At 125°C load measured 50.75 Ώ using 4156
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Variation in Error Bounds with RL Variation for 1% and 2% Load Variation
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A Different Approach – Load at DUT Temp
� Assumes that worst variation is load resistance
� Currently the subject of ARFTG paper development
“Sensitivity Analysis of Wafer-Level over Temperature RF
Calibration" to be submitted to 80th ARFTG
� Load resistance measured using parametric instrument� Load resistance measured using parametric instrument
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A Different Approach – Load at DUT Temp
� Temperature still changes – Absorber raised ISS from
chuck
� Further experiments to evaluate this approach required
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Agenda
� Why on-wafer thermal?
� Investigation background
� RF characterisation systems
� Mechanical effects of temperature transition – probe
and chuck growthand chuck growth
� Measured electrical effect of thermal transition
� Suggested practical calibration approach with real life
data
� Effect of load resistance variation
� How to use WinCal XE to calibrate, de-embed and
measurement data
� Conclusion
![Page 71: Practical Considerations and Solutions for Temperature ... · BCTM '07. IEEE , 2007, pp. 26-29. Motivation: Three Contradictions Temperature variation typically requires re-calibration](https://reader034.fdocuments.in/reader034/viewer/2022050508/5f99431b6dafd203ce397188/html5/thumbnails/71.jpg)
Use of WinCal for PPR and Parameter Extract
� Measurements of DUT various, Open pads and Short
pads to be in same Report
� WinCal can perform PPR on the fly for all DUT
measurements if required
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Use of WinCal for PPR and Parameter Extract
� Preferred is to use Math ScratchPad to product
individual data items – useful for swapping with other
reports
![Page 73: Practical Considerations and Solutions for Temperature ... · BCTM '07. IEEE , 2007, pp. 26-29. Motivation: Three Contradictions Temperature variation typically requires re-calibration](https://reader034.fdocuments.in/reader034/viewer/2022050508/5f99431b6dafd203ce397188/html5/thumbnails/73.jpg)
Agenda
� Why on-wafer thermal?
� Investigation background
� RF characterisation systems
� Mechanical effects of temperature transition – probe
and chuck growthand chuck growth
� Measured electrical effect of thermal transition
� Suggested practical calibration approach with real life
data
� Effect of load resistance variation
� How to use WinCal XE to calibrate, de-embed and
measurement data
� Conclusion
![Page 74: Practical Considerations and Solutions for Temperature ... · BCTM '07. IEEE , 2007, pp. 26-29. Motivation: Three Contradictions Temperature variation typically requires re-calibration](https://reader034.fdocuments.in/reader034/viewer/2022050508/5f99431b6dafd203ce397188/html5/thumbnails/74.jpg)
Conclusion
� Accuracy of on-wafer over-temperature RF
measurements up to 110 GHz can be improved
� High-speed calibration with monitoring after
stabilisation is the recommended method
� Different calibration required per temperature� Different calibration required per temperature
� Reduce instrument IF bandwidth to highest tolerable,
use low number of points
� WinCal repeatability / verification is not needed
during calibration process over ISS
� WinCal greatly aids the calibration process
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Any Questions?
Thank you for attending.
For questions, please contact:
Gavin Fisher, Application EngineerGavin Fisher, Application Engineer
+44-121-2860170