GROWTH OF SEMICONDUCTOR MATERIALSPRESENTED BY:MAWAR OKTIVINA (373741/PPA/04806)I PUTU TEDY INDRAYANA (372131/PPA/04646)PROGRAM STUDI ILMU FISIKAUNIVERSITAS GADJAH MADA2015

What are the techniques?Growing bulk single crystalsGrowing a thin layer of perfect crystal

Czochralski MethodAvailable at: Peter Yu & Cardona (2010; pg:6)Available at: www.youtube.com.Note:Rotating velocity: - (rot/sec)Pulling velocity: 10-4 3 x 10-2 (cm/sec)Control of temperatureCondition has to be quasi-static

Horizontal Bridgman MethodAvailable at: Reka Rio & Masamori Ilda (1980; pg:157)Note:1. Available for producing semiconductor as result of combination between group II-IV or III-V2. Temperature around the seed crystal is below the melting point

Horizontal Bridgman Method(a) Vacuum Snealing(b) SintesisArsen yang bersifat mudah menguap(c) Penumbuhan KristalMenarik keluar tungku

Chemical Vapor DepositionHow does growing a thin high quality layer on a lower quality bulk substrate?Available at: www.youtube.com.

Chemical Vapor DepositionNote:For thin film of thickness < 100 nmHomo-epitaxyHetero-epitaxyTemperature of substrat is importantFig. (a) Schematic diagram of a MOCVD apparatus . (b) Details of two flow MOCVD machine introduced by Nakamura and co-workers for growing GaN. (c) Schematic diagram of the gas flows near the substrate surfaceAvailable at: Peter Yu & Cardona (2010; pg:8)

Molecular Beam EpitaxyNote:Utilizing electrons and ions as probes to monitor the surface and film quality during growth.

Available at: Peter Yu & Cardona (2010; pg:10)

Cont...(Molecular Beam Epitaxy)Oscillations in the intensity of the specularly reflected electron beam in the RHEED pattern during the growth of a GaAs or AlAs film on a GaAs substrate. One period of oscillation corresponds precisely to the growth of a single layer of GaAs or AlAsAvailable at: Peter Yu & Cardona (2010; pg:10)

Liquid Phase EpitaxyNOTE:Growing GaAs laser diodesGa or In, is utilized as the solvent for AsLow costAvailable at: Peter Yu & Cardona (2010; pg:14)

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