Ppt Mw Materials

10-11/07/07 EMRS DTC Conference 2007 1

Dr Richard LangTDM Theme Leader

Technical Director, Filtronic Components Ltd.

Overview of the Transduction Devices & Materials (TDM) Research Theme


Transduction Devices & Materials Theme

One of four specific EMRS DTC themes : TDM, RF, EO, TEP

The TDM research theme is by nature closely related to the research work of the other themes, in particular to the RF Systems theme work.

This theme provides key technology building blocks or technology enablers for RF and microwave systems.

Specifically, the TDM theme is focused on research into RF & Microwave Materials, Devices, Circuits & Packaging – all being tailored to match emerging defence systems requirements.

Only selected areas, which potentially offer the highest leverage to the MOD, are considered within this research theme.


Broad TDM Technology Research Aims

Seek reductions in Size, Weight and Power of future microwave modules in Radar, UAV and EW systems. Emphasis on use of cross-cutting and emerging technologies.

Investigate advanced component and circuit concepts for use in complex future systems such as adaptive array radars and next generation EW systems

Prove underpinning TDM technologies for future RF & microwave systems – TDM technologies are the building blocks of systems.

Demonstrate to system designers, substantial improvements in base technologies of materials, devices & circuits (ie NOT incremental). Technology should be exploitable.

Focus projects on real requirements and continuously review potential for exploitation. Ensure UK defence base has access to new and emerging TDM technologies –

reduce effects of governmental export restrictions (ITAR)

These aims require continuous and critical monitoring of R&D to ensure that promising technologies are properly supported and

pulled through.


Specific TDM Technology Research Areas Semiconductor Materials and Devices

– Efficient, broadband, detection, high-power generation and amplification at microwave, mm wave & terahertz frequencies using III-V and wide band-gap semiconductors

– Ensure UK access to critical semiconductor devices at affordable cost– MEMS, nanotechnology, photonics and innovative integration on Silicon and/or SiGe

RF & Microwave circuits – Size reduction– High dynamic range A/D converters– Rapidly tuneable low-loss filters – Receiver protection against high power electronic attack– Efficient microwave PA’s & sources– Integrated mixed technology applications (microwave/digital, EO/microwave etc.)– Novel MMICs for microwave and MM-Wave applications – Technology for advanced multifunctional radars and active RF resource management – Modelling (for significant improvements in size or performance)

Packaging & Substrate Materials– Improve system performance through innovative packaging techniques– ultra low-cost packaging techniques– 3D microwave interconnect– Improved packaging and thermal management of high power devices


Active TDM Projects – Materials & Devices (1)

GaN for next generation sensors (QinetiQ)– investigation of the growth of GaN devices on silicon substrate (alternative to SiC)

GaN based HFETs for high power operation (Sheffield University)– Fabrication of HFET devices on QinetiQ GaN-on-Si

CVD Diamond MESFETs for RF Power applications (Element Six)– Investigating delta-doped diamond MESFETS

Why fund wide band-gap devices?– Specifically mentioned in the Defence Technology Strategy. – Have potential to replace established GaAs technology with devices that offer higher operating voltages,

operate at higher temperatures, offer substantially higher power density, and require less circuit protection

– Reduced die size (per watt) or higher power output (per die)– No UK capability – although emerging capability in Europe

Each of the WBG projects have demonstrated potential and have been awarded DTC extension projects for 2007

Pt-gate on GaN written by

e-beam


Active TDM Projects – Materials & Devices (2)

InP Feasibility Study (Selex S&AS)– Studied UK’s future military need for high speed, complex, mixed analogue/digital RFICs

implemented using state-of-the-art SiGe or InP bipolar technologies. – Final report under review

Diamond MEMS switches (Pre-Cursor; Filtronic & Ulm University)– Can diamond MEMS be used for ultra-fast microwave switching?– Potential of higher power handling capability, with reduced RF leakage– Final report under review

Reports from both projects are now under review prior to decisions being made on their recommendations

Large area MEMS cantilever


Active TDM Projects – Circuits & Packaging

Broadband Microwave Frequency Selective Limiter (Leeds University)– selective limiting of high level interfering signals - preserve dynamic range

Compact LHM reconfigurable Meta-materials for RF/Microwave IC’s (UMIST)– Using left-handed materials techniques to investigate compact microwave filter structures,

with a goal of reducing the size of circuits

Novel Multi-layer Liquid Crystal Polymer (LCP) Packages for High Power Applications (Filtronic/BAES‑ATC)– low-cost alternative to ceramic. High-spec microwave material - easy to process (multi-

layer) – allows complex multi-layer applications.– LCP laminates have favourable microwave and moisture absorption properties.– X-band T/R module demonstrator

LCP Circuit bonded to Al carrier MMIC and 4W pHEMT device

mounted in cavities


New TDM Projects for 2007 UK source for mm-wave imager MMIC technology (QinetiQ/Glasgow Uni)

– Two initial aims: – Define the requirements for specific mm-wave imaging systems – Study a microstrip-based, monolithic GaAs mHEMT, mm-wave, imager

Planar Gunn Diode sources for frequencies at and above 100GHz (Aberdeen Uni)

– Planar architecture enables easier MMIC integration– Gunn diodes and triodes demonstrated by Aberdeen - frequencies 30GHz to 108 GHz– Based on a MESFET design that demonstrated the Gunn effect in the channel. – Power measured at about 1μW and needs to be increased to be useful.

Novel Development Methodology for Highly Efficient & Ultra-Broadband Remote Sensing Applications (Cardiff Uni)

– Aims to improve output power and PAE of future wideband microwave systems. Already demonstrated at 2GHz for cellular applications

– Novel concept uses measurement of I &V waveforms at interfaces between components. – Shows real load lines and insight into RF device operation. – Utilises all non-linear information within a microwave system to allow optimisation of large

signal performance.


Summary: TDM Theme

Broad TDM theme objectives described Specific theme technologies identified within the areas of RF & Microwave

“materials, devices & circuits” Current projects described - key features identified New projects for 2007 outlined - watch out for progress during 2008. Reminder: Don’t forget to check out the TDM posters during the conference

[email protected]

Tel: 07980 234874www.filtronic.co.uk


Radar Absorbing MaterialsStealth Technology

ByEsteban Hernandez


R.A.M. • Radar Absorbing Material (R.A.M.)

• Plessey Company (1940’s)– moved from Ilford to Caswell House during WW II


R.A.M.

• Materials– carbon fiber composites– magnetic ferrite-based

substance

• RAM reduces the radar cross section making the object appear smaller


R.A.M.• Problems

– Must be defect free• Most at risk during in flight fueling

– High maintenance • $14.5 million (F-117)

– Affected by weather conditions• Reason for B-2 Bomber stationed only in USA


Future of R.A.M. F-22 Raptor

– Radar Absorbing Alloy (Classified)– Canopy; Radar Absorbing Glass

• (contains a copper alloy)– Radar Absorbing Paint along the leading edges


References• www.f-22raptor.com/st_getstealthy.php• People.howstuffworks.com/stealth-bomber.htm• People.howstuffworks.com/news-intem67.htm

http://www.f-22raptor.com/st_getstealthy.php

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