Power Semiconductor - DRIVE-E · PDF filePower Devices & SMART Power IC ... Application for...

63
2010-01-14 Page 1 Copyright © Infineon Technologies 2010. All rights reserved. Power Semiconductor – State of the Art and Development Trends By Leo Lorenz Infineon Technologies Munich E-mail: [email protected] Focus Application: Power Devices for Automotive & Industry Outline: Indroduction Power Devices & SMART Power IC´s for Automotive Application - SMART Power IC´s - Discrete Power Devices (Power MOSFET, SiC, IGBT´s) Development Trends and Challenges

Transcript of Power Semiconductor - DRIVE-E · PDF filePower Devices & SMART Power IC ... Application for...

Page 1: Power Semiconductor - DRIVE-E · PDF filePower Devices & SMART Power IC ... Application for Power Semiconductor Components Source: IPEC 2000 Semiconductor switching frequency 10 Hz

2010-01-14 Page 1Copyright © Infineon Technologies 2010. All rights reserved.

Power Semiconductor – State of the Art and Development Trends

By

Leo Lorenz

Infineon Technologies

Munich

E-mail: [email protected]

Focus Application: Power Devices for Automotive & Industry

Outline:

Indroduction

Power Devices & SMART Power IC´s for Automotive Application

- SMART Power IC´s

- Discrete Power Devices (Power MOSFET, SiC, IGBT´s)

Development Trends and Challenges

Page 2: Power Semiconductor - DRIVE-E · PDF filePower Devices & SMART Power IC ... Application for Power Semiconductor Components Source: IPEC 2000 Semiconductor switching frequency 10 Hz

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Power Semiconductor – State of the Art and Development Trends

Key Message: The most inexpensive and environmental friendlyenergy is:

The Energy We Do Not Consume Nor Waste

Driving Technology:

Power Devices & SMART Power IC´s

System Integration

Precise Control of Energy Flow

Demand oriented operation of load

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NinNout

ControlDesired value

Actual value

LoadSource

AC: V, f, j, 1-Phase, 3-PhaseDC: V, +/-

AC: V, f, j, 1-Phase, 3-PhaseDC: V, +/-

Very Basic Structure of any Power Electronic System(Inverter, Converter)

Page 4: Power Semiconductor - DRIVE-E · PDF filePower Devices & SMART Power IC ... Application for Power Semiconductor Components Source: IPEC 2000 Semiconductor switching frequency 10 Hz

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Description of SystemsSense – Process – Actuate in Closed Feedback Loop

Components of System

Sensors

PowerDevices

Micro-controlle

r

Solution

Components

eP WL

LWS

ACROPOLIS

Challenges

Q & A

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Energy Consumption and Control of Energyflowthrough Power Electronics

12 billion kilowatts every hour of day of every year

20

Source: CPES/EPRI

16

12

8

4

01800 1900 2000 2100 Year

20 40 60 80 20 40 60 80 20 40 60 80

Total Energy

Electrical Energy 30% savings withimproved powerelectronics(components & systems)

Motor55%

Internet10%

Lighting21%

Other14%

40%ElectricalEnergy

Total Energy

1997: 40%2010: 80%

60% 20%

Power Electronics Control Unit

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Major Consumers of Electrical Energy – Savings Potential

Source: ZVEI, Siemens, CEMEP, CPES, EPA, NRDC, IFX

Today: 40% out of the overall energy consumption is electrical energyC

onsu

mer

s el

ectri

cal e

nerg

y (w

w)

Energy Split: ww Energy saving potential

Key technology

Power supply:- stand-by, - active, …

- Computing

EC-BallastDaylight dimmingHID, LED, …

Factory autom.Process engineering,Heavy industry,Light industry, …

Transportation:Train, Bus, Car, …

Home appliance:Freedge, WM,HVAC

80+ / 90+

Electronic control

IGBTModulesCiPOSEMCONCoolMOSCTOptimized µC8 bit / 16 bit / 32 bit

>90%>>1%

>>1%

>25%

>30%

>25%

>40%

CoolMOS, SiCSmart control ICCoolSETLow cost µC

CoolMOSSmart ballast ICLow cost µC

I&COthers

24%

Lighting21%

Motor control55%

- stand-by- active

Variable Speed Drive (VSD)

VSD + Reverse Energy

VSD

confidential

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Motor drives is about RPM control enablingincrease in overall system efficiency

Applications

Invert

er

base

d

mo

tor

The inverter supplies the drive with exactly thepower it needs, minimizing energy losses

Energy saving of ~ 25-40% is possible

AC 240-690 V

Energy grid Inverter &Power Electronic

Inverter output 3~

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Motor Drives: Basic Principle

Diode Rectifier

3 x 400V /50HzL1

L2

L3

+

-

U[V] U[V]

IGBT Inverter

UVW

U[V] U[V]

AC voltage

Fixed frequency 50Hz

AC-voltage

variable frequency 0-300Hz

AC-InputMains AC-Output

Motor

DC-Link

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History of Power Semiconductors

IGBT

Cool-MOS

MOS-transistor

GTO

bipolar transistor

thyristor

diode

400V - 1000V;1A - 50A

20V - 1000V;1A - 100A

year

small power medium power

197019601950

voltage range;current range

200019901980

600V - 8000V;1A - >1000A

> 3000V;> 500A

> 3000V;> 500A

<1400V;1A - 300A

600V - 8000V;10A - >1000A

600V - 6500V;1A - >1000A

GCT

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Application for Power Semiconductor Components

Source: IPEC 2000 Semiconductor switching frequency10 Hz 100 Hz 1 kHz 10 kHz 100 kHz

Capacity of the converter system

Reative compensators AC-AC interties1 GW

100 MW

10 MW

1 MW

100 kW

10 kW

1 kW

100 W

High current supplies large drives

Heavy locomotives

Large solar power plants trams, busses

Electric cars

Switched mode power supplies

Thyristor

Year 2005Tendency

GTO

IGBT

FET

Ultra high power

High power

Mediumpower

Low power

the higherthe converter capacity,the lowerthe switching frequency

HVDC

IFX 2136 1099/MCD

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Automotive Applications

New fields:Cam shaft

replacement,42V/12V DC/DC

converter

Starter –Generator

(Ta >150°C

Brake by wire(Ta >150°C)

Steer by wire,intelligent power

management

Power seatPowerwindow

Wiper

Sun roof

Gearbox /Clutch

Enginemanagement

Climate control

Starter / FanPower steering

Headlightbeam control

Doorlock

Mirrorcontrol

Brakes

SMART Power Bridges 1A < I < 250A_ _

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Global CO2 Targets

It's the law: 35 mpg CAFEAutomotive News Dec. 19th 2007Cars: 35 mpg by 2020

EU Proposes steep fines to cut car CO2 from 2012Automotive News Dec. 20th 2007Cars: 120gCO2/km by 2012+10 g coming from biofuels …

60.1854.1649.2445.1341.6638.6935.00MPG

3.914.344.785.215.656.086.72l / 100km

90100110120130140155g CO2/km

Conversion table for regular gasoline engine

90

100

110

120

130

140

150

160

170

180

190

200

1994

1996

1998

2000

2002

2004

2006

2008

2010

2012

2014

2016

2018

2020

gC

O2

/km

161 gCO2/km

130 gCO2/km

120 gCO2/km

95 gCO2/km

OEM Actual

OEM Voluntary

Target

EU Proposal(Dec, 2007)

Alternative Proposal

incl. BioFuel(Jan, 2008)

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LIN-systems connected via CAN

System Architecture of Modern Cars A Complex Network of Interacting Sub-Systems

Source: C. Bracklo, 1st Intl LIN Conf., Sep02

>9km cables with >100kg for > 70 ECUsHow to manage this complexity at low cost?

Solution

Components

eP WL

LWS

ACROPOLIS

Challenges

Q & A

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Control: 24 lampsSwitched Power:650WDissipated Power: 7W

Light Control Module : Block diagram

CHMSL (LED)

Indicator

Reverse Tail Indicator Brake Fog

Park Indicator High Low Fog Interior (dim) Relais Fog Low High Indicator Park

Indicator

Spare 5A Foot well

BTS44316mΩ

BTS44316mΩ

BTS44316mΩ

BTS44316mΩ

BTS44316mΩ

BTS44316mΩ

BTS44316mΩ

TLE 622516mΩ

BTS13416mΩ

BTS7244x90mΩ

BTS7164x140mΩ

BTS7244x90mΩ

BTS7244x90mΩ

BTS7244x90mΩ

License Plate Brake Indicator Tail Reverse

TLE 6258LIN

TLE 6252CAN

Vbat

TLE 42685V LDO

C164CI

To rest of car

To rest of car

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IN

ST

ESD Logic

Voltage

sensor

Voltage

source

Charge pump

Level shifter

Rectifier

Limit forunclampedind. loads

Gate

protection

Currentlimit

3

1

Signal GND

GND

2

VLogic

Overvoltageprotection

+ Vbb

PROFET®

OUT

4

6, 7

Load GND

Load

GND

RO

CurrentSense

OutputVoltage

detection

RIS

IS5I IS

IL

Short circuit

detection

Temperature

sensor

Block Diagram of a Single-Channel Smart High Side Switch

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new 3 series“old BMW“ 5 / 7 series

Body Control Module Evolution – Example from BMW

Smart Power Semiconductors significantly contributed to the Automotive Light Module Evolution

confidential

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Semiconductor Solutions enables improved VehiclePerformance and Fuel Consumption

Source: VDA

Average fuel consumption of European cars

8 bit 16 bit 32 bit

Horse power

Average Fuelconsumption

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HVAC Fan

Linear controlled PWM controlled

Linear controlled MOSFETs is used as variable resistor in series with DC-brush motor

DC-brush motor with half bridge for PWM (8 bit µC / half-bridge / Π-Filter)

CO2 Benefits:

Reduced power losses ~ 80WEstimated additional costs ~ 10€Reduced fuel consumption ~ 0.08l / 100kmCO2-reduction ~ 1.9 g/km Pays off a

fter le

ss

than 8.000 km

or 0.5 years

Main benefit Reduced power losses in ECU

Feasibility available technology, complexity: low

Source : Continental

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Overview of CO2-Reduction Examples

Pay-back

[years]

Cost adder

[€]

CO2-reduction

[g CO2 / km]

Application

1605.9EPS

1201.9Fuel pump

0.5101.9HVAC Fan

51803.5Alternator

0.8557.1Water pump

0.451.2Infotainment

3.7451.2Use of LED

0.870.8PWM for bulbs

Page 20: Power Semiconductor - DRIVE-E · PDF filePower Devices & SMART Power IC ... Application for Power Semiconductor Components Source: IPEC 2000 Semiconductor switching frequency 10 Hz

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Product SolutionsDC/AC Converter for Drive (Car)

LoadLoad

E-Motor /GeneratorDC/DC

HVBattery DC/AC

DC/DC

12 V Battery

optional

HVAC

DC/AC

HVAC

DC/AC

HVAC

DC/AC

LoadLoad

Six Pack Power Module with IGBT

Switching Frequency: 5-20kHz

Max. OutputFrequency: 1kHz

Bus Voltage: 120-450V or 500-700V

Battery Voltage: 120-450V

Output Power: 10-120kW

Motor: Permanent Magnet or

Squirrel Cage

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We meet all requirements forcost effective automotive power products

TEMPFETprotectedlow-side-SwitchOverloadprotectionThermal shutdown

MOSFET/IGBT

HITFETfully protectedlow-side-SwitchOverload protectionCurrent limitationShort-circuit protectionOvervoltage protectionOpen load detectionThermal shutdown

PROFETfully protectedhigh-side-SwitchIntegrated chargepumpOverload protectionCurrent limitationShort-circuitprotectionOvervoltageprotectionOpen load detectionDiagnostic feedbackMulti-Channel

Power System IC’sSmart PowerSystem Integration:ABS / AIRBAGPowertrainSmart

Power IC’sMulti-Channel SwitchesBridgesDriver-IC‘sVoltage RegulatorsCCAN/LIN TransceiverDC/DC Converter

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Switching Application

+ Vbb

Load

LS

+ Vbb

G

D

S

RDS(ON)UTrans = RDS*I

UL = Ubb - UTransI

ON: +UGS

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HITFET® - typical circuit design

Since the internal driving logic of HITFET’s is supplied via the Input pin, HITFET’sdraw small currents during operation

HITFET’s can be driven in general without any additional, external circuitry sinceeverything is implemented inside the device

Vbb

µCD

S

OutLo

ad

GND

InternalLOGICIN

Optionalserial resistor

for statuspurposes

Low Side (CLASSIC)

µC

Vbb

D

S

Out

Load

GND

IN

High Side (Optional)

Leve

lSh

ifter

InternalLOGIC

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Integrated Half Bridge – NovalithIC Concept

P

N

Current Limitation ~70A typ. / 50A min. (low side)

7 mΩtyp.

9 mΩtyp.

Chip

-On-

Chip

Chip

-By-

Chip

Current Sense

No Charge Pump

25 kHz PWM w. Active Freewheeling

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On State Resistance

Cos

ts

MonolithicPower Switch

Chip-on-ChipPower Switch

Chip on ChipS-Smart or SPT 4withS-FET

MonolithicS-Smart SPT 4Top Chip

Control IC Base ChipPower-Switch (4-5 Masken)

Chip-on-Chip versus Monolithic Solution

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Types of Semiconductor Switches

Source: D. Silber

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Power Devices

Source: D. Silber

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High energy-saving potentional through improvement of efficiency and minimization of standby losses

AC / DCConversion:30% losses

AC / DCConversion:30% losses

220 V (AC)

DC / DC Conversion:20% losses

DC / DC Conversion:20% losses

Battery Charger:20% losses

Battery Charger:20% losses

Battery Standby:

50% losses

Battery Standby:

50% losses

heatnoiseheatnoise

Standby consumption in the US equals 4 nuclear power

plants

Standby consumption in the US equals 4 nuclear power

plants

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Power Supply High Energy Saving Potential(Mass Production)

DC/DC Controller

••

AC

85...

265VP

LUG

Saving Consumption Technology

PFC Syn. Rect.

Energy Saving>>1%

>> 90%

>> 1%

CoolSET

CoolMOSSiCSmart control IC

3% Sleep

••

• •• •

• •

AC/DC Converter

DC 2

Source: EPA, LBNL, NRDC

TechnologyCoolMOS/IGBT

SiCSmart control IC

TechnologyLV-Optimos,

Smart control IC

Energy Saving>>1%

24%Standby Mode

73%Active Mode

Power Convertion

PFC Controller

PWMController

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They typically use single transistor forward topology with one power MOSFET & some diodes

AC

90.

..270

V

Passive PFCstage

PWM stageGalvanic insulationPWM-IC900V/1000V MOSFET

Three secondary sidewindings onone transformer

Diodes 12V, 5V, 3.3V

900V/1000V

PWMController

12V

5V

3.3V

Indicates Power Semiconductor content

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Let’s take the example of today’s PC power supplies…

Efficiency Analysis

30 %

40 %

50 %

60 %

70 %

80 %

90 %

0 W 50 W 100 W 150 W 200 W 250 W 300 W 350 W 400 W 450 W

POUT [W]

effic

ienc

y η

[%]

Power Supply APower Supply BPower Supply CPower Supply DPower Supply EPower Supply F

Conventional power supplies achieve efficiency of around 70%-80% today

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However, with the use of new topologies on primary and secondary side …

AC

90.

..270

V

PWM stageGalvanic insulationhard or resonant sw., 100..200 kHzCoolMOS 500V/600 V,199 mOhm C6PWM IC and Half Bridge Driver

12 V with synchronousrectification

PFC stageensures current to followvoltage sine wave, PF=1hard sw., 64..100 kHzCoolMOS 500V/600 V, 199 mOhmSiC Schottky diode 600VCCM PFC IC

Secondary rectificationsynchronous rectification for12Vhard commutation,100..200 kHzOptiMOS 60..100 V, 5..10 mOhmBuck Stages for 3.3V and 5V

PFCController

12V

DC

5V D

C3.

3V D

C

12V

DC

500V/600V

HBDriver

PWM LLCController

Indicates Power Semiconductor content

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Cell – Structure of Power MOSFET

n-

n

np p

sourcegatesource

drain

w

Rndrain

n

Rn-

Rch

Rnsource

gate oxid

+

+- -

n

n-

np

n p

sourcegatesource

drain

CGS CGDox CGS

wspace charge region w sc

CGDsc

CDS

+

-

Electron current flow Capacitances

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CoolMOSTM

The Superior Principle for High-Voltage MOSFET

0

30

25

20

15

10

5

0

Ron x A[Ωmm2]

200 400 600 800 1000Breakdown voltage V(BR)DSS [V]

Standard MOSFETRon x A ~ V(BR)DSS 2.4 . . . 2.6

CoolMOSTM

New horizonsfor high-voltage

applications

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Sipmos-Driving

Al

n-

p+ p+

n+

n+ n+SiO2

Poly

Drain

GateSource

VB

VS

CGDCDS

Cox

Cox

C

VDS

CGDCDS

CGS

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Sipmos-Driving

Al

n-

p+ p+

n+

n+ n+Poly

Drain

GateSource

VB

VS

8V

++ ++++ +++++ +++ SiO2

VDS

ID

1V3.5V

8V

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Sipmos-Transistor

RON

1C1 RON 2 C2 RON n C1

n

1 2 3 4 5 6 7 8

...R

1R

1R

1

ON2ON1ON

++= ...C2C1C tot ++=

RON . i2

1/2.Ctot.VB2.f

Ptot=PON+PC

Ptot

Adim

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On-State: Intermediate Current

Source: D. Silber

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Performance

98 99 00 01 02 03 04 05 Time

CoolMOSTM Generations and milestone

CoolMOSTM C3• Revolution in switching losses.• Fast Diode “CFD” Series• High current capability.• Best-in-class: 160 mOhm in TO220

CoolMOSTM CP(C5)

• 50% parasitic C and Qg.• Best in class : 99 mOhm in TO220,

45 mOhm in TO247

• SJ Revolution in conduction loss• Lowest Rdson on the market: 70mOhm• Best-in-class: 190 mOhm in TO220

06 07 08 09

• Self-limited dv/dt, di/dt easy use.

• Lowest Rdson and parasitic as C3 and CP

• Enchance Diode Commutation

CoolMOSTM C6

CoolMOSTM S5CoolMOSTM S5

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Typical end-applications for DC/DC

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Technology EvolutionPlanar technologies

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Increase Channel Width per Active AreaIncrease Channel Width per Active Area

Trends in Modern Power MOSFET Development I

RJFET

RChannel

Gate

Drain

RChannel

REpi

Source

Planar

RSub

Gate

Drain

Source

Trench

REpi

RCh

RSub

Gate

Drain

Source

Trench

REpi

RCh

RSub

RJFET

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Buck ConverterSwitching determined parasitics

package and layout inductances

• switching speed is limited according to dI/dt = Vin/Lstray• switching losses are defined by Lstray

at HS turn-off, Lstray is charged toE = ½ I² Lstray

currentcommutation

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S3O8highest power density on 11mm²

32mm² 11mm²

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SiC as the ultimate power device base material

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0,910

0,915

0,920

0,925

0,930

0,935

0,940

0,945

0,950

0 50 100 150 200 250 300

Switching frequency [kHz]

Effic

ienc

y [%

]

SiC SBD 2nd gen, 8A rated

Competitor, Tandem diode, 8A rated

Competitor, pn diode, 8A rated

SiC diodes are needed for zero reverse recoverycharge at blocking capabilty of 600V and above !

-6

-4

-2

0

2

4

6

0.05 0.1 0.15 0.2 0.25 0.3

Time [µs]

I [A

]

SiC Schottky diode: 6A, 600VSi-pn Tandem diode 8A, 600VStandard Ultrafast 5A, 600V pn-diode

T=125°C, UAK=400VIF=6A, di/dt=200A/μs

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The p-islands carrying the bipolar current makethe difference for the 2nd generation!

edge termination

metallizationSchottky contact

Epitaxial n- drift layer

Epitaxial n+ field stop layer

High conductivity 4H SiC substrate

Schottky current

Bipolar boost

Preconditions: • Optimized emitter efficiency• Good ohmic contact to p-wells

Preconditions: • Optimized emitter efficiency• Good ohmic contact to p-wells

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Lowside

driver

High Performance AC/AC Stand alone Drive System

UVW

L1L2L3

µCInterface

CCU

CPU

µCCAN

ModuleOTP

ADC10 bit

CANInterface

UserInterface

I/O

Lowside

driver

Highside

driver

Lowside

driver

Highside

driver

Lowside

driver

Highside

driver

C7

E7

G7

G1

C1

E1

G3

C3

E3

G5

C5

E5

G2

C2

E2

G4

C4

E4

G6

C6

E6

Driver stage a.Protection loop:

SC, Driver supply-UV

Sensor loop:Iphase, IFE, VDC,

case-temp.Inrush

strategy

Insulation point(safety insulation)

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Product SolutionsDC/AC Converter for Drive (Car)

LoadLoad

E-Motor /GeneratorDC/DC

HVBattery DC/AC

DC/DC

12 V Battery

optional

HVAC

DC/AC

HVAC

DC/AC

HVAC

DC/AC

LoadLoad

Six Pack Power Module with IGBT

Switching Frequency: 5-20kHz

Max. OutputFrequency: 1kHz

Bus Voltage: 120-450V or 500-700V

Battery Voltage: 120-450V

Output Power: 10-120kW

Motor: Permanent Magnet orSquirrel Cage

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IGBT and MOSFET of same Die size

=> 15A IGBTversus

7A CoolMOS

Only Power switch in one Package

Figure 3 :Total power losses versus the pulse frequency for the IGBT and FET of the same die size.

IGBT No.1 : Fast IGBT IC100=15AIGBT No.2 : High Speed IGBT IC100=15AFET No.3 : Conv.MOSFET ID100= 7AFET No.4 : CoolMOS CP ID100= 7A

Rectangular current IT=11A, D=0.5, VT=400V, TC=100°C, TJ=150°C.

Up to a pulse frequency of 50 kHz the IGBT is the better choice.

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MOSFET and IGBT in on state

IGBT current is provided by electrons and holesbecause of the additional p doped layer

RDSonMOSFET

n-

p n+

SiO2

Al

p

D

G

S

Resistor behavior : RDSon

Cross section of MOSFETcurrent provided by electrons

NPT-IGBT

n-

pn+

SiO2

Al

G

p

C

E

VCEsat

Additional p layer Bipolar behavior:

VCEsat

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IGBT-Operating Principle

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2010-01-14 Page 53Copyright © Infineon Technologies 2010. All rights reserved.Expert Presentation

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Leads to reduction in losses, increased efficiency and increased power density !

GEN 1 GEN 2 GEN 3 GEN 4 GEN 5

Power Densit

y

50%

Loss

Red

uct

ion

1

1.5

2

2.5

3

3.5

4

1988 1992 1996 2000 2004 2008 2012

VCEs

at(1

25°C

) [V]

@ 7

5A

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Short Circuit Properties of Trench-/Field-Stop-IGBTs –Design Aspects for a Superior Robustness

Decrease of the chip thickness

0

20

40

60

80

100

120

140

160

180

200

220

240

260

280

300

1988 1990 1992 1994 1996 1998 2000 2002 2004 2006 2008

Chi

p th

ickn

ess

/ µm

600V

1200V

1700V

NPT FS

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Typical Module

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Temperature of IGBT Modules

Heatsink Temp. – Th

Chip-CaseThermal

Resistance –Rthjc

Heatsink(-Ambient)Thermal

Resistance –Rthha

Chip

SolderCopper Layer

Ceramic (Al2O3 / AlN)CopperSolder

Base Plate

Heatsink

Junction Temp. – Tj

Case Temp. – Tc

Ambient Temp. – Ta

Chip – Case ΔTjc

Case – HeatsinkΔTch

Heatsink –Ambient ΔTha

Input Power Output PowerPower Loss

Tj = ΔTjc + ΔTch + ΔTha + Ta

Case-HeatsinkThermal

Resistance –Rthch

Thermal Grease

/ A.Volke

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Fast Switching Power Transistor in Application

Parasitic Components in Circuit-Topology

TransistorDrivingEnergy TransmissionInformation TransmissionIsolation

Earth brit

4

1

1

1T

2

3

3

2

4234

Dr. LorenzPublicis-1011-0046

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Packages (low/medium and HighPower IGBT)

Easy750

Easy 1

Easy 2

Econo1B

Econo2B

34mm

Econo3B

Econo3with PressFIT

EconoPACKTM+

EconoDUALTM 3

Discrete IGBT`s

Easy 1B

PrimePACKTM

IHM B

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Summary

Main driver for Power Device Development are

- Reduction of Power Loss

- High Ruggeduen

- High Reliability (chip + packaging)

- Easy to Control

- High power density

- Low cost

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System RealizationSemiconductor specialistEl. system engineeringMech. system

engineeringPackaging engineeringAssembly engineeringTest engineeringQuality engineeringSystem sim. specialist

Challenge in Power Electronics

Driving FactorsEnergy savingCostMobility/ComfortRegulationEnviromentalfriendly material

Reliability (T>75°C)Extended rel. datasMiniaturizationDynamics (Overload)Imunity (EMI, dv/dt)NoiseCommunicationSelf-learning system

System Requirements

SoftwareSystem simulation toolsTest-architecturesExt. reliability datas

R&D TopicsSystem OptimizedComponents

Passive & semiconductor

New MaterialsSemiconductorThermal-/Isolation Interfacing

Packaging ConceptsChip-contacting technologyEmbedded power assembly

Mechatronics

Multi-chip assemblyDifferent technologiesDifferent temperature ratingsDifferent temperature

profiles

IntegratedPower Elektronic

System

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