Power Semiconductor Devices

UCF Overview of Power Semiconductor Device

UCF Power Diode (1)

4500V/800A press pack and

1700V/1200A module diodes

UCF Power Diode (2)

UCF Diode Switching Off

UCF Ideal Power Diode

UCF PNPN Diode

Breakover voltage

Holding current

UCF DIAC (or PNPNP Diode)

Behave like two PNPN diodes connecting back to back

Can conduct in either direction

UCF Silicon Controlled Rectifier (SCR) or Thyristor (1)

4500V/800A and 4500V/1500A SCRs

UCF SCR or Thyristor (2)

UCF Ideal SCR (1)

UCF Ideal SCR (2)

UCF SCR Switching Characteristics

DI9.0

DI1.0rrt

rrI1.0rrI

onV

dont

ont

rt

Gi

Ti

Tv

GMIGMI1.0

t

t

t

DI

offt

rrQ

DVDV1.0

Ti

TvGi

UCF SCR Specifications

DRMV RRMV TAVMI TRMSI - Maximum

Rating 12000V 12000V 1500A 2360A -

Turn-on

Time

Turn-off

Time /dtdiT /dtdvT rrQ Switching

Characteristics sont 14 sofft 1200 sA /100 sV /2000 C7000

DRMV – Repetitive peak off-state voltage RRMV

– Repetitive peak reverse voltage

TAVMI – Maximum average on-state current RRMSI

– Maximum rms on-state current

2

rrrrrr

ItQ – Reverse recovery Charge Part number – FT1500AU-240 (Mitsubishi)

12000V/1500A SCR Thyristor

UCF Gate Turn-off (GTO) Thyristor

4500V/800A and 4500V/1500A GTOs

UCF GTO Switching Characteristics

Tv

DV

dofft tailt

ft

DV9.0

DV1.0DI

DI9.0

DI1.0

rtdont

dtdiG

/1

MGI 1

MGI 11.0 MGI 21.0

MGI 2

TiTT iv ,

Gi

t

t

dtdiG

/2

0

0

Ti

TvG

i

UCF Symmetrical versus Asymmetrical GTOs

Type Blocking

Voltage

Example

(6000V GTOs) Applications

Asymmetrical GTO DRMRRM VV VVDRM 6000

VVRRM 22

For use in voltage

source inverters with

anti-parallel diodes.

Symmetrical GTO DRMRRM VV VVDRM 6000

VVRRM 6500

For use in current

source inverters.

DRMV - Maximum repetitive peak (forward) off-state voltage

RRMV - Maximum repetitive peak reverse voltage

UCF TRIAC

like two SCRs connect back to back sharing a common gate

UCF Ideal TRIAC (1)

UCF Ideal TRIAC (2)

UCF Power MOSFET (1)

UCF Power MOSFET (2)

UCF IGBT (1)

Insulated Gate Bipolar Transistor

UCF IGBT (2)

UCF IGBT (2)

UCF MOS-Controlled Thyristor (MCT)

UCF Device Comparison (1)

12000

10000

8000

SCR12000V/1500A

(Mitsubishi)

4500V/900A

(Mitsubishi)

6500V/1500A

(Mitsubishi)GTO/GCT

7500V/1650A

(Eupec)6500V/600A

(Eupec)

6000

4000

2000

1000 2000 3000 4000

3300V/1200A

(Eupec)

2500V/1800A

(Fuji)

1700V/3600A

(Eupec)

IGBT

SCR:

GTO/GCT:

IGBT:

27MVA

36MVA

6MVA

6000V/3000A

(ABB)

6500V/4200A

(ABB)

6000V/6000A

(Mitsubishi)

4800V

5000A

(Westcode)

5000 6000 I (A)

V (V)

00

UCF Device Comparison (2)

DC-DC Converter

Buck and Boost Converter Topologies

Implementation Using a Switch and a Diode Implementation Using Two Switches

Buck Vo/Vin = D (duty ratio)

Implementation Using a Switch and a Diode Implementation Using Two Switches

Boost Vo/Vin = 1/(1-D)

For bidirectional Buck/Boost applications, only topologies using two switches can be used.

Combined Bidirectional Topology

Buck Boost

Boost Buck

11

1

DV

V

low

high

11low

high

VD

V

Consistent since D2=1-D1.

Bidirectional

Example: Excitation from Low Voltage Side

When D1=0.6 and Vlow =40 V, we have Vhigh = 40/(1-0.6)=100 V.

Example: Excitation from High Voltage Side

Boost Converter with PWM Feedback

Kp = 0.001Ki = 1

Boost Converter with PWM Feedback

Output Voltage

Duty Ratio