PMJ 2013 Panel Discussion Challenges for future EB mask ... · PMJ 2013 Panel Discussion Challenges...
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Imaging across the world PMJ 2013 Panel Discussion PMJ 2013 Panel Discussion Challenges for future EB mask writers Challenges for future EB mask writers Challenges for future EB mask writers Challenges for future EB mask writers Hiroshi Matsumoto, Munehiro Ogasawara and Kiyoshi Hattori April 18 th , 2013
Transcript of PMJ 2013 Panel Discussion Challenges for future EB mask ... · PMJ 2013 Panel Discussion Challenges...
Imaging across the world
PMJ 2013 Panel DiscussionPMJ 2013 Panel Discussion
Challenges for future EB mask writersChallenges for future EB mask writersChallenges for future EB mask writersChallenges for future EB mask writers
Hiroshi Matsumoto, Munehiro Ogasawara and Kiyoshi HattoriApril 18th, 2013
Condenser lenses 1st shaping aperture
Shaping deflectors
Electron gun
VSB VSB vs. vs. pixelated gray beampixelated gray beam
VSBTwo shaping apertures used to form a triangular or rectangular beam.
Pixelated gray beamsA number of square shaped beams, of fixed size, created by array of shaping apertures.
Shaping deflectors
2nd shaping aperture
Sub deflectors
Main deflectors
Projector lenses
Objective lens
Reticle
Slide 2April 18, 2013
Platzgummer et al., Proc. of SPIE Vol. 8166 816622-1, 2011Yoshitake et al., Proc. of SPIE Vol. 8166 81661D-8, 2011
Condenser lenses 1st shaping aperture
Shaping deflectors
Electron gun
VSB VSB vs. vs. pixelated gray beampixelated gray beam
VSBTwo shaping apertures used to form a triangular or rectangular beam.
Pixelated gray beamsA number of square shaped beams, of fixed size, created by array of shaping apertures.
(IMS poc tool)Amplitude: 1.875V (0x1000⇔0xFFFF)1LSB: 0.229mV (±15 V/ 17bit DAC resolution)
Shaping deflectors
2nd shaping aperture
Sub deflectors
Main deflectors
Projector lenses
Objective lens
Reticle
Slide 3April 18, 2013
Platzgummer et al., Proc. of SPIE Vol. 8166 816622-1, 2011
512x512 blanker array in 20 mm sq. chip
32 ns, or shorter, settling time was demonstrated on test bench with EBM-8000 Sub DAC Amp
+/- 3mV
Yoshitake et al., Proc. of SPIE Vol. 8166 81661D-8, 2011
Motivation for multibeam technologyMotivation for multibeam technology
Throughput independent of pattern sizeIn VSB systems smaller shot size results in smaller exposure current and larger shot count, to increase total exposure time and total settling time.
Curvelinear features can be written more easilyVSB systems use rectangular or triangular figures. VSB systems use rectangular or triangular figures.
Slide 4April 18, 2013
VSB VSB vs. vs. pixelated gray beampixelated gray beam
VSBShaped beam (triangle, rectangle) exposed with uniform dose.
Pixelated gray beamSquare beam exposed with modulated dose
Dose profile can be reproduced with gray beam,
a : pixel size
Slide 5April 18, 2013
0DD =0DD =
05.0 DD =
reproduced with gray beam, if beam size is sufficiently small
VSB vs. VSB vs. pixelatedpixelated gray beamgray beamdo
se
deposited dose
irradiated doseshaped beam
dose
pixilated beam (20 nm)
deposited doseirradiated dose
deposited dose
VSB Pixelated gray beamShaped beam (triangle, rectangle) exposed with uniform dose.
Square beam exposed with modulated dose
Slide 6April 18, 2013
position
threshed dose forresist process
design pattern size (300 nm)
position
design pattern size (300 nm)
deposited dose(VSB)
position
dose
design pattern size (300 nm)
pixilated beam (50 nm)
deposited dose
irradiated dose
deposited dose(VSB)
VSB VSB vs. vs. pixelated gray beampixelated gray beam
VSBShaped beam (triangle, rectangle) is exposed with uniform dose.
Pixelated gray beamSquare beam is exposed with modulated dose
a : pixel sizedo
se
deposited dose withVSB, 20nm pixel, 50 nm pixel
Slide 7April 18, 2013
0DD =0DD =
05.0 DD =
Dose profile can be reproduced with gray beam, if beam size is sufficiently small position
dose
design pattern size (300 nm)
threshed dose forresist process
Writing experiment (1)Writing experiment (1)
(a = 100 nm) (a = 50 nm) (a = 20 nm) (a = 10 nm)
beam
VSB writing and pixelated gray beam writing were compared in writing experiments using the EBM-8000 (single VSB writer) and FUJIFILM PRL-009
Shot sizes of 10, 20, 50 and 100 nm, with 50% dose for edge pixels.Edge pixels were written in different write pass.
Several chips were written with different dose D.
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pixe
late
dbe
amV
SB
April 18, 2013
Writing experiment (2)Writing experiment (2)
Shot size : 100 nm
pixelated beamVSB
100 nm100 nm
9
100 nm
April 18, 2013
Writing experiment (3)Writing experiment (3)
pixelated beamVSB
Shot size : 20 nm
10
20 nm
20 nm
April 18, 2013
Writing experiment (4)Writing experiment (4)
pixelated gray beamVSB
average of VSB
-50
0
50
∆CD
[nm
]
a [nm] 10 20 50 100-50
0
50
∆CD
[nm
]
a [nm] 10 20 50 100
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Writing accuracy of pixelated beam improves as beam size decreases.
Beam size of 10nm and 20 nm brings the same CD accuracy, with a discernible slope difference to VSB writing.
April 18, 2013
0.8 0.9 1 1.1 1.2 1.3-50 100
dose [AU]0.8 0.9 1 1.1 1.2 1.3
-50 100
dose [AU]
Challenges for multiChallenges for multi--beam writersbeam writers
Beam size needs to shrink, as beam blur reduces.
assumed from ITRS forecast for direct write
2014 2016 2018 20200
5
10
15
year
pixe
l siz
e [n
m]
2014 2016 2018 20200
10
20
30
40
year
beam
blu
r (F
WH
M)
[nm
]
Introduction of multi-pass exposure with grid offset can improve gray beam write accuracy, but this is not addressed in this discussion.
How can pixel size shrink?Increased demagnification
Performance of high demag. optics is questionable.
Reduction of aperture size, accompanied by either of :Increased # of beams with reduced beam pitchIncreased beam current density
Slide 12April 18, 2013
yearyear
Challenges for MBMWChallenges for MBMW
Whichis thepracticaloption ?
4
6
8
10
J [A
U]
2014 2016 2018 20200
0.2
0.4
0.6
0.8
1
0
2
4
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10
year
beam
pit
ch [
AU
]
# of
bea
m [
AU
]
beam pitch
# of beam
2014 2016 2018 20200
5
10
15
year
pixe
l siz
e [n
m]
Slide 13April 18, 2013
VSB with 2x/node shot count increase
MB
Low sensitivity resist maymultiply write passes and data volume
Inevitable
2014 2016 2018 20200
2
4
6
8[×1014]
year
data
vol
ume
[Byt
e]
2014 2016 2018 20200
2
4
year
J [A
U]
2014 2016 2018 20200
2
4
6
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year
dem
agni
fica
tion
[A
U]
SummarySummaryPixelated gray beam can have writing accuracy equivalent to VSB, with sufficiently small beam size
Error budget is needed to estimate feasible accuracy, as actual, beamlets have error in position, size and exposure current. .
Challenges for multi-beam mask writersSmaller beam size for smaller beam blur
Multi-pass writing with grid-offset is necessary. Multi-pass writing with grid-offset is necessary. Shrinkage of beam pitch required with increase of # of beams. Otherwise, J or optical demag. should be increased.
Integrity of explosive data volumeRoadmap for 10-year evolution
Challenges for VSB mask writersSmaller shot size for smaller patterns
Further increase of J and reduction of settling time is required.
Shift to multi-column strategy
Slide 14April 18, 2013
ENDEND
Slide 15April 18, 2013
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