PLASMONIC NANOSENSORS FOR THz … 11, 2017 · PLASMONIC NANOSENSORS FOR THz COMMUNICATION AND...
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PLASMONIC NANOSENSORS FOR THz
COMMUNICATION AND SENSING
FOR IoT APPLICATIONS
Michael Shur Rensselaer Polytechnic Institute
Troy, NY 12180, USA
1
Presented at
The 14th U.S.-Korea Forum on Nanotechnology: Internet of Things (IoT) including Nanosensors and Neuromorphic Computing
September 11, 2017
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Outline 2
Motivation
Scaling issues for VLSI
THz communications on nanoscale
Plasmonic Nanosensors
CNT and graphene plasmonics on Si
Future work
Conclusions
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INTERNET OF THINGS INSTALLED BASE (MILLIONS OF UNITS)
3
0
5000
10000
15000
20000
25000
2013 2014 2015 2016 2017 2018 2019 2020 2021
DATA FROM http://www.gartner.com/newsroom/id/3165317
YEAR
More aggressive estimates over 50 billions by 2020
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IoT needs 4
LOW POWER WIDE AREA (LPWA) wireless technology
Bandwidth
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IoT NEEDS 5
REQUIRE ADVANCED NANOSCALE VLSI
TECHNOLOGY for ULTRA-LOW POWER
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INTEL: 10 nm iPhone should be announced today
6
From Rachel Cortland, posted 30 March 2017 https://spectrum.ieee.org/nanoclast/semiconductors/processors/intel-now-packs-100-million-transistors-in-each-square-millimeter
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0.1 billion transistors per mm2
7
From Rachel Cortland, posted 30 March 2017 https://spectrum.ieee.org/nanoclast/semiconductors/processors/intel-now-packs-100-million-transistors-in-each-square-millimeter
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5 nm? 8
Essential Responsibilities :
· Establishing overlay and CD measurement
capabilities for the 7-nm node and
beyond
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Minimum Transistor size 9
Silicon unit cell 0.543 nm (9 unit cells for 5 nm)
Silicon –Silicon Dioxide interface 0.7 nm
Silicon-Silicon Dioxide layer 1 nm
Ferdinand Hodler, Swiss (March 14, 1853 – May 19, 1918)
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Cost technology rising after 28 nm 10
SAMSUNG
SEMICONDUCTOR USA
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Companies dropping out 11
From SAMSUNG
SEMICONDUCTOR USA
Samsung
TSMC
Intel
Global Foundries
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Area Efficiency for INTEL technology
12
Feature size (nm)
Are
a E
ffic
ien
cy
0
0.002
0.004
0.006
0.008
0.01
0.012
0 10 20 30 40 50
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Interconnect Resistivity 13
R/Ro
Interconnect Size (nm)
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Plasma Waves 14
Drain Source
Gate
+
+ -
+ -
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Dispersion of Plasma Waves 15
3D 2D ungated
p
k
p
k
23
0
N Dp
e
m
22
02
N Dp
ek
m
E
+ - +
2D gated
+
+
+
E
-
-
-
E
km
dNe Dp
0
2
2
kd<<1
d
p
k
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Plasma Waves in a Field Effect
Transistors 16
GaN
Si
GaAs
0.02 0.05 0.1 0.2 0.5 1
Gate Length (micron)
0.5
10
50
5
1
Plasma modes
Transit modeFre
quen
cy (
TH
z)
From V. Ryzhii and M.S. Shur, Plasma Wave Electronics Devices,
ISDRS Digest, WP7-07-10, pp 200-201, Washington DC (2003)
•Plasma frequency can be tuned by gate-to-channel voltage •FET channel plays a role of a resonant cavity for plasma waves •Plasma waves can propagate much faster than electrons
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Claude Monet Impressions of Sunset, Pourville (1882)
Light-plasma wave interaction
Effect of boundary conditions
Kreeger museum, Washington DC
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Shock Plasma Waves (Hokusai 1760-1849 ) 18
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19
Small size (easy to fabricate arrays)
High sensitivity
Broad spectral range
Band selectivity and tuneability
Fast temporal response
Si plasmonic FETs compatible with
VLSI technology
Veksler, D.B. Muraviev, A.V. Elkhatib, T.A. Salama, K.N. Shur, M.S. , Plasma wave FET for sub-wavelength THz
imaging, International Semiconductor Device Research Symposium December 12-14, 2007 College Park, Maryland, USA
Plasma THz Electronics Advantages
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Physics of High Speed 20
ELECTRON TRANSPORT
• Collision dominated
• Ballistic
• Viscous regime
M. Shur, A. Muraviev, G. Rupper, and S. Rudin, THz Pulse Detection by Photoconductive Plasmonic High Electron Mobility Transistor with Enhanced Sensitivity, Device Research Conference (DRC) 2016
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Modulation frequency 21
101
102
103
104
105
1010
1011
1012
1013
f MA
X
(Hz)
Mobility () (cm2/Vs)
22nm
100nm
250nm
500nm
InGaAs
101
102
103
104
105
1010
1011
1012
1013
f MA
X
(Hz)
Mobility () (cm2/Vs)
22nm
100nm
250nm
500nm
GaN
101
102
103
104
105
1010
1011
1012
1013
f MA
X (H
z)
Mobility () (cm2/Vs)
22nm
100nm
250nm
500nm
Si
InGaAs GaN
Si
From M. Shur, G. Rupper and S. Rudin, " Ultimate limits for
highest modulation frequency and shortest response time of field
effect transistor ", Proc. SPIE 10194, Micro- and Nanotechnology
Sensors, Systems, and Applications IX, 101942M (May 18, 2017);
doi:10.1117/12.2261105; http://dx.doi.org/10.1117/12.2261105
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Plasmonic detectors work up to 5 THz
22
After W. Stillman, C. Donais, S. Rumyantsev, M. Shur, D. Veksler, C. Hobbs, C. Smith, G. Bersuker, W. Taylor and R. Jammy, Silicon FIN FETs as detectors of terahertz and sub-terahertz radiation, International Journal of High Speed Electronics and Systems, vol. 20, No. 1, pp. 27-42 March (2011)
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Graphene photodetectors concepts
23
GL p-i-n photodiodes GNR hot-electron bolometers
Double-GL plasmonic THz
detectors
Hot-electron transistor with
GL base as plasmonic THz
detector
Vah der Waals hot-
electron bolometer
Interband double-GL photodetector
23 V. Ryzhii, T. Otsuji, M. Ryzhii, V. E. Karasik, V. Ya. Aleshkin, A. A. Dubinov, V. Leiman, D. Svintsov, V. Mitin,, and M. S. Shur,
International Symposium on Hybrid Quantum System 2017 (HQS 2017), Zao, Miyagi, Japan, Sept. 10—13, 2017
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Modulator 24
-8 -7 -6 -5 -4 -3 -2 -1 00
1
2
3
4
5
6
7
8
f=1.40THz
Mo
dula
tio
n (
%)
Gate Pulse Amplitude (V)
f=1.89THz
N. Pala, D. Veksler, A. Muravjov, W. Stillman, R. Gaska, and M. S. Shur, Resonant Detection and Modulation of Terahertz Radiation by 2DEG Plasmons in GaN Grating-Gate Structures, in Abstracts of IEEE Sensors Conference, Atlanta, GA, October 2007, pp. 291-292
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Plasmonic Boom THz Source 25
Gate Source Drain
100 mW @ 1 THz
G. R. Aizin, J. Mikalopas, M. Shur. Current driven" plasmonic boom" instability in gated periodic ballistic nanostructures, Phys. Rev. B 93, No 19, 195315, May 2016
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THz Communication on Nanoscale
26
Emitter DetectorFunctional block
Chip
Large VLSI chip using terahertz emitter-detector
pairs for wireless interconnect
From Y. Deng and M. S. Shur, Electron Mobility and Terahertz Detection using Silicon MOSFETs, Solid-State Electronics, Vol. 47, Issue 9, pp. 1559-1563, September 2003
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THz attenuation in atmosphere 27
From Tadao Nagatsuma, Present and Future of Terahertz Communications “TeraHertz: New opportunities for industry, EPFL, FEB 11‐13, 2013
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THz communication (0.1 THz to 30 THz)
28
Goes through fog and dust
Goes through walls
LOS and NLOS with reflections
Very secure
Hard to jam
Unique for next generation WLAN
Unique for next generation WPAN (biomedical)
Range from 1000’s km in space to submicron communications on chip
Data rates up to Tbps predicted
Excellent for frequency spreading
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APPLICATIONS of THz SENSING
TECHNOLOGY 29
Radio astronomy and Earth remote sensing
Vehicle radars and compact radars
Non-destructive VLSI testing
Chemical sensors
Explosive detection sensors
Gasoline and oil quality testing
Moisture content sensing
Coating thickness control
Film uniformity determination
Structural integrity testing
Medical diagnostics, sensing, and imaging
Concealed weapons and object detection
Detection of Chemical Warfare Agents
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THz Sensing of Biofluids 30
SampleDrop
GunnDiode
THzBeamChopper
BiasSupply
Preamplifier
Lockinamplifier
Pipe e
FETdetector
N. Pala and M. Shur, Plasmonic THz detectors for biodetection, Electronics Lett,, Vol. 44, No24, p. 1391 (2008) N. Pala, M. S. Shur, and R. Gaska, Plasma Wave-based THz Bio Detectors, presented at SPIE Optics East (2007)
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Transfer Characteristics With and Without Heparin and
Response of the Plasma Wave Detector
31
-0.8 -0.6 -0.4 -0.2 0.00
2
4
6
8
10 No Heparin
Heparin 10g/ml
Heparin 100g/mll
Heparin 500g/ml
Heparin 1mg/ml
Fujitsu FHX35X Lg=250nm Vd=100mV
Dra
in C
urr
en
t I
D (
mA
)
Gate Bias VG (V)
N. Pala and M. Shur, Plasmonic THz detectors for biodetection, Electronics Lett,, Vol. 44, No24, p. 1391 (2008) N. Pala, M. S. Shur, and R. Gaska, Plasma Wave-based THz Bio Detectors, presented at SPIE Optics East (2007)
-0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0.0
0
1
2
3
4
5
6
7
8
Fujitsu FHX35X Lg=250nm f=200GHz
Re
spo
nse
A
mp
litu
de
(A
U)
Gate Bias VG (V)
Bare device
Heparin 10 g/ml
Heparin 100 g/ml
Heparin 500 g/ml
Heparin 1 mg/ml
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Plasmonic sensor using 2D and 3D
percolating CNTs 32
V. V. Ryzhii, T. Otsuji, M. Ryzhii, V. G. Leiman, G. Fedorov, G. N. Goltzman, I. A. Gayduchenko, N. Titova, D. Coquillat, D. But, W. Knap, V. Mitin, and M. S. Shur, "Two-dimensional plasmons in lateral carbon nanotube network structures and their effect on the terahertz radiation detection", J. Appl. Phys. 120(4) (2016) 044501.
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CNT supercapacitors for IoT 33
M. Shur, 3D Carbon Nanotube Energy Storage and Sensors Devices and Systems, Provisional Patent Application, EFS ID: 29868227. Application Number: 62536092, Confirmation Number: 5173, July 24 (2017).
A. Vijayaraghavan, S. Kar, S. Rumyantsev, A. Khanna, C. Soldano, N. Pala, R. Vajtai, O. Nalamasu, M. Shur,
and P. Ajayan, Effect of Ambient Pressure on Resistance and Resistance Fluctuations in Single-Wall Carbon
Nanotubes, J. Appl. Phys. 100, 024315 (2006),
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Conclusions
• Low power and band width requirements of IoT demand ultra small feature sizes
• Scaled interconnects become a dominant factor
• Plasma waves electronics approach could enable THz communication and sensing from nanoscale on chip to LPWA wireless network scale
• CNT, graphene and CNT supercapacitors integrated wit Si VLSI have potential for IoT applications
• Future work: plasmonic THz sources
34
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Acknowledgment 35
This work was made possible by Army Research Laboratory under ARL MSME Alliance (Project Manager Dr. Meredith Reed) and by Office of Naval Research (Project Manager Dr. Paul Maki)