Photovoltaics F.-J. Haug Ecole Polytechnique Fédérale de Lausanne (EPFL), Institute of...

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Photovoltaics F.-J. Haug Ecole Polytechnique Fédérale de Lausanne (EPFL), Institute of Microengineering (IMT), Photovoltaics and Thin Film Electronics Laboratory (PV-Lab), 2000 Neuchâtel, Switzerland.

Transcript of Photovoltaics F.-J. Haug Ecole Polytechnique Fédérale de Lausanne (EPFL), Institute of...

Photovoltaics

F.-J. HaugEcole Polytechnique Fédérale de Lausanne (EPFL), Institute of Microengineering (IMT),

Photovoltaics and Thin Film Electronics Laboratory (PV-Lab),

2000 Neuchâtel, Switzerland.

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Outline

• Why Solar Cells?

• How do they work?

• Why thin film silicon solar cells?

• What do we do at PV-Lab?– thin film solar cells on glass and plastic substrates– thin films for wafer-based cells (hetero-junction cells)– transparent conducting oxides– (sensor applications)– (module design and reliability)

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The power source: Our Sun

• A low to medium size star

• Heated by fusion(essentially , processes for , etc.)

• Power output: (convert to energy)

• Delivers to the earth

• 10’000 the global energy consumption

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Solar irradiation atlas

SolarGIS

Central Europe: ca 1 kW/m2 under clear sky at noonYearly average: 1000 kWh/m2, ca 3 hours every day

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The solar spectrum

See www.pvlighthouse.com.au

The solar spectrum resembles white-hot body glowing at T=5700 K• Usually measured with respect to wavelength (use a grating or a prism)• In PV: often necessary to convert to photon energy:

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Filtering by atmosphere: air mass (AM)

AM1.5: central Europe

AM2: 30° above horizon

AM3: 20° above horizon

Air mass number: , latitudePV standard: => , central Europe, Canada/US border

AM0: space

AM1: equator

400 600 800 10000.0

0.5

1.0

1.5

2.0 AM0 (data) AM1 AM1.5 (data) AM2 AM3

Spect

ral i

rradia

ton d

ensi

ty (W

/m2nm

)

Wavelength (nm)

WaterOzone

1000 W/m2

integrated: 1366 W/m2

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Is 1 kW/m2 a low energy density?

Example Germany: 30% of electricity supply by lignite (brown coal)exploitation in open strip mines

some data for Hambach (Germany): - lower ground water table by 400 m- dislocate 3 villages (2 more planned)- 85 km2 open mine and waste-deposit - 40 Mio tons of coal per year

~7GW electricity

Formation of lignite: 25 Mio y exploitation: 1984-2050

Perspective: solar illumination on 80 km2: 80 GWcover with solar cells of 10% efficiency => 8 GWp (alas, not continuously)

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Other “conventional” energy sources

Less obvious, but still impact on large area: dropping ground over coal shafts, shale-gas fracking, deep-sea oil drilling, etc.

MTR (mountain top removal) for Appalachian coal (USA)

Strip mining of tar sands in Alberta (Canada)

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Solar electricity (photovoltaics)

Roof top installation (Kaneka a-Si modules)Teplin Airstrip, Germany: 130 MW on 2 km2 installed in 4 months

c.f. Centrale de Gd Dixence: 2 GW, 8 km2 lakes + catchment area

Suitable roof top area in Switzerland: 138 km2 (residential, commercial, etc.)

(IEA)

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What is inside a solar cell?

thin film silicon solar cell p-i-n junction

glass

reflecting back electroden-layer

semiconductorabsorber layer

p-layer

transparent front contact

eh

glass

encapsulation

glass

metallic back contact

p-type wafer

n-contact

encapsulation

eh

glass

encapsulation

silicon wafer solar cell p-n junction

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What is inside a solar cell?

active part: semiconducting silicon (thin film)(also used: CdTe, CIGS etc.)

glass

glass

encapsulation

glass

n-contact

encapsulation

glass

encapsulation

active part: semiconducting silicon (crystalline)

2-3 μm200-300 μm

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What is a semiconductor?

• It’s conducting, but not as good as metals

• Electric conductivity is normally associated with the flow of electrons in metals

• Conductivity in semiconductors is different

• The flow of water can serve as analogue

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Conductivity in metals

Flow of electrons similar to flow of waterHorizontal surface, no (very small) potential difference

Analogue:a pond of water

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Electronic conductivity in a semiconductor

Winter: the pond is covered with ice

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Electronic conductivity in a semiconductor

Winter: the pond is covered with ice

Flow of electrons similar to flow of water (like metals)Difference: Slower movement, needs potential difference

Winter: the pond is covered with ice

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Hole conductivity in a semiconductor

Imagine: blow air bubbles under the ice sheet

A new phenomenon, exclusive to semiconductors !Bubbles under the barrier move upwardsIn semiconductors: positive charge carriers called holes

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Why semiconductors for solar cells?

• Metals normally reflect light; semiconductors can absorb it

• Absorbed light creates pairs of electrons and holes (water droplets above and bubbles below the ice sheet)

• An electric field between doped regions separates electron-hole pairs (imagine you inclined the ice sheet)

e-

h+

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Absorption in semiconductors: bandgap

+

-

-

+

High bandgap:high el. potentiallow current

Low bandgap:low el. potentialhigh current

Photons with energy less than the band gap are not absorbedPhoton energy in excess of band gap is lost to thermalization

𝜂=𝑉 𝑜𝑐 ⋅ 𝑗𝑠𝑐 ⋅ 𝐹𝐹⏟¿ 0.7 ...0.8

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Limiting efficiency

0.5 1.0 1.5 2.0 2.50

10

20

30

40

CdTe

CuGaSe2

a-Si

CuInSe2

GaAs

Ge

Si

Effi

cien

cy (

%)

Band gap energy (eV)

certified records: 28.8%: crystalline GaAs (Alta Devices)25.6%: crystalline silicon (Panasonic)20.5%: thin film Cu(In.Ga)Se2, (Solibro)

Theoretical limit of ~33%, optimum bandgap 1.44 eV

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Better use of incident light: tandem cells

0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

Top cell bandgap (eV)

Bot

tom

cel

l ban

dgap

(eV

)

0510152025303540

4 Terminal (no constraint on current matching)

Theoretical limit of ~43%, optimum bandgaps 1.1 and 1.7 eV

certified records (triples): 37.9: crystalline (In,Ga)P/GaAs/(In,Ga)As (Sharp)13.4%: thin film a-Si/nc-Si/nc-Si (LG)

high gap

low gap

glue

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Wafers or thin films?Crystalline cells: size determined by wafer

e.g. c-Si:single-crystalline: max 30cm diametermulti-crystalline: typically cut to 15x15 cm2

Thin film modules: size determined by glass and machinery

e.g. thin film silicon tandem modules5.3 m2 (Applied Materials machinery)1.4 m2 (TEL Solar (ex Oerlikon) machinery)

high efficiency – high cost moderate efficiency – low cost

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Wafers or thin films?Crystalline material: perfect propertiesexcellent lifetime and collection

Polycrystalline or amorphous materials: defects and grain boundariesrecombination and short lifetime

Electric field: Electric field:

e-

h+

e- e-

h+ h+

e-

h+

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Module interconnection

Wafer based: solder cells into strings(e.g. SunPower: 22.4%)

Thin film: 3 x laser scribing during process(e.g. TEL Solar: 12.2%)

SunPower

SaFlex/TEL Solar

Rowell, En. Env. Sci

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Thin film advantage

Semi-transparent a-Si modules (Schott)

Colorful TF-Si modules(PV-Lab prototypes)

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Thin film advantage

Roof tile laminate(Bressler)

Flexible a-Si modules(Flexcell)

(UniSolar)

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Thin film dilemma

PV modules are sold by power, currently:

~0.8 $/W crystalline

~0.6 $/W thin film

3.5$/W in 3.5 y

PV system cost (currently ~5 $/W)

includes items that scale with area

(mount, wiring, labour, etc.)

For given power kWp, a larger area is needed, higher cost takes longer for amortisation

3.5$/W in 3.5 y

Balance of System (BOS)“cost baseline”

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PV landscape in Switzerland

PV-Centre

Neuchâtel

dye sensitizedsolar cells

flexible CIGS

3S Laminators

MB wafer sawing

Pasan sun simulators

Roth and Rau (CH)

PV-Labsystens

module testing

PV-Labc-Si, TF-Si

dye cells

inverters

Equipment(end 2014)

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What we do at PV-Lab

TF-Sichallenge: weak absorberption especially for long wavelengths (red light)

Solution: add back reflector => 2x absorptionadd texture for scattering => up to 50x

TCOp

i

n

TCO

p-i-n (usually on rigid glass)

Superstrate

(glass)

back reflector

grow

th

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Textured ZnO:B electrodes

Requirements:- conductivity: add B-dopant (diborane)- surface texture for light scatteringExamples:

ZnO:B (PV-Lab std.)SnO2:F (commercial, Asahi)

W. Wenas, Jap. J. Appl. Phys (1991)S. Faÿ, EU PV Conf. (2000)

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Take care with texturing!

Collision of growth fronts on facets yields defective material !

H. Sakai, Jap. J. Appl. Phys. (1990)Y. Nasuno, Jap. J. Appl. Phys. (2001) M. Python, J. Non-Cryst. Sol., (2008)

Here: μc-Si, but also observed in a-Si

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Cells on flexible plastic substrate

Nano-imprinting used for texturing of plastic (here: periodic grating structure)

T. Söderström, Appl. Phys. Lett, (2009)K. Söderström, Prog. in PV, (2010)

J. Escarré, J. Optics, (2012)R. Biron, Sol. En. Mat. (2013)

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Heterojunction solar cells

c-Si is a perfect crystal; cell-performance is not bulk- but surface-limited

Intrinsic (undoped) a-Si:H provides excellent passivation of c-Si surface

Charge is extracted through passivating a-Si:H bi-layers

High efficiency cells >22% (certified)

Surfacepassivation

A. Descoedre, EU-PV Conf., (2012)

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Research on hetero-junction cells

• Thin a-Si layers: max 5 nm

• Pure a-Si layers: avoid epitaxy on underlying c-Si

• Chemical annealing: alternate SiH4 and H2 plasma

• Other:– Texture etch (avoid sharp valleys)– Highly transparent TCOs (very high transmission at 1100 nm)– Replace screen printing of Ag contacts by galvanic Cu

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• Acknowledgement for funding– Swiss Federal Office for Energy

EU FP6 and FP7, CTI, FNS, CCEM-CH, Swiss Electric Research, Axpo Naturstromfonds, Velux-Stiftung, IBM…

– Bosch, Oerlikon Solar, Pasan, Flexcell, Solvay, Dupont, Metalor,Meyer-Burger (3S Moduletec, Roth and Rau), Indeotec SA, …

• Thanks also to the PV-Lab members

Thanks for your attention

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