Photonic Materials 3_Waveguides
Transcript of Photonic Materials 3_Waveguides
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PhotonicMaterials
Frank GellDaniel Navarro
1
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TABLE OF CONTENTS
3. Fundamentals of waveguides 1D and 2D waveguides: fundamentals andexperimental characterization.
Reference: Silicon photonics: an introductionGraham T. Reed andAndrew P. Knights
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n2
n1
2211 sinnsinn =
1
2n2
n1
Ei Er
Et
Lightraysrefractedandreflectedattheinterfaceoftwomedia
1
c
TheRay Optics Approach to Describing Planar Waveguides
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n1
n2
211 nsinn =
1
2c
nnsin =
Totalinternalreflectionattwointerfacesdemonstrating
theconceptofawaveguide
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Reflection Coefficients
irE.rE =
where r is a complex reflection coefficient, which ispolarisation dependant
The Transverse Electric (TE) condition is defined as the
condition when the electric fields of the waves are
perpendicular to the plane of incidence.
Correspondingly, the Transverse Magnetic (TM) conditionoccurs when the magnetic fields are perpendicular to the
plane of incidence.
n2
n1
Ei Er
Et
Circlesindicatethattheelectricfieldsarevertical(i.e.comingoutof
screen)
OrientationofelectricfieldsforTEincidenceattheinterface
between2media.
interface
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The reflection coefficients rTE and rTM, are described by the
Fresnel formulae
For TE polarisation:
2211
2211TE
cosncosn
cosncosnr
+
=
For TM polarisation:
2112
2112TM
cosncosn
cosncosnr
+=
Using Snells Law:
1
22
1
2
211
1
22
1
2
211TE
sinnncosn
sinnncosnr
+
=
And
1
22
1
2
211
2
2
1
22
1
2
211
2
2
TM
sinnnncosn
sinnnncosnr
+
=
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If1isgreaterthanc
( ) 2j
j j
j
a jb er e e
a jb e
and
= = = =
+
1r =
Where TE and TM are given by:
and
1
2
1
21
2
1
TEcos
n
nsin
tan2
=
1
1
2
1
2
2
2
2
1
1
TM
cosn
n
1sinn
n
tan2
=
Which arenegative indeed
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Butrrelatesreflectedfields. Powerisdescribedby
thePoynting Vector
2
m
m2 EEZ
1S
==
And
reflected
power
is
related
by
reflectance
R:
2
2
i
2
r
i
r rE
E
S
SR ===
where E is electric field, m is the permittivity of themedium, m is the permeability of the medium, and Z is theimpedance of the medium
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Phase of a propagating wave and its wavevector
Let
and
Where z is the direction of propagation
)]tkz(jexp[EE0 =
)]tkz(jexp[HH 0 =
Therefore,phase
is
tkz =
The phase varies with time (t), and with distance (z). These
variations are quantified by taking the time derivative and the
spatial derivatives:
where is angular frequency (rads/sec), and f is frequency (Hz).
f2t
==
kz
=
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k is the wavevector (propagation constant) in the direction
of the wavefront. It is related to wavelength, , by:
=2
k
In free space k = k0, and
Hence in free space,
0nkk=
0
0
2
k
=
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Modes of a planar waveguide
Thewavevector inaplanarwaveguide
n1
n2
n3
y
x
z
hk0n1
We can decompose the wavevector k, into two components,
in the y and z directions.
1k=n1k0
kz=n1k0sin1
ky=n1k0cos1
Therelationshipbetweenpropagationconstantsinthey,z,
andwavenormal directions
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We require self consistency condition. As the wave reflects
twice it reproduces itself. The total phase shift must be a
multiple of 2, hence:
12 cos AC AB h =
= m2coshnk2 u110 l
, since we have seen that reflection coefficients give a phase
change upon reflection. We have refered to these phase
shifts as u, and l respectively.
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Theplanarwaveguide
n1
n2
n3
y
x
z
h
0 1 12 cos 2uk n h m =l
Thuslightpropagatesindiscretemodesdescribedbythe
polarisationandthemodenumber.
E.g.TE0,TE1,TM0,etc
Eachmodewillhaveauniquepropagationconstantinthe
yandzdirections
Thenumberofmodesislimitedbysatisfactionofthe
requirementsoftotalinternalreflection.
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The Symmetrical planar waveguide
Inthesymmetricalplanarwaveguide,n2 =n3,andhence
u=l. ThereforeforTEpolarisation,theequationbecomes:
This can be rearranged as :
=
m2cos
n
nsin
tan4coshnk2
1
2
1
21
2
1
110
=
1
2
1
21
2
110
cosn
nsin
2mcoshnktan
Laterwewillsolvethisequationforangle1
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Wecanfindtheapproximatenumberofmodessupportedby
thewaveguideasfollows:
The minimum value that 1 can take is c. i.e.
1
2c
n
nsin =
Hence the right hand side of the previous equation reduces
to zero and the equation becomes:
02
mcoshnk maxc10 =
rearranging for m, the mode number,
= c10max
coshnkm
Numberofmodes=[mmax]int +1,sincethelowestorder
mode(usuallycalledthefundamentalmode),hasamode
numberm=0.Notethatthesymmetricalwaveguideis
nevercut
off.
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The Asymmetrical planar waveguide
n2 n3,andu l ,hence
Propagationin
an
asymmetric
planar
waveguide
n1
n2
n3
y
x
z
h
[ ]
+
=
1
2
1
31
2
1
1
2
1
21
2
1
110cos
n
nsin
tancos
n
nsin
tanmcoshnk
Notethatthereisnotalwaysasolutionform=0,hencethe
asymmetricalguidemaybecutoff.
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Solving the eigenvalue equation for symmetrical and
asymmetrical waveguides
Let n1 = 1.5, n2 = 1.49, n3 = 1.40, 0= 1.3m, and h = 0.3m,
and TE polarisation.
Notethattheasymmetricalwaveguideiscutoff,whereasthe
symmetricalwaveguideisnot
0 0.2 0.4 0.6 0.8 1 1.2 1.40
1
2
3
f( )
2( )
1( )
3( )
4( )
u l
k0n1hcos1
l
2u
u +l u
Phase
Change
(radians)
Fundamentalmode
angle
1 (radians)
Solutionoftheeigenvalue equationform=0
Solutionfor1
20 0.2 0.4 0.6 0.8 1 1.2 1.4 /2
3
2
1
0
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Now consider a silicon waveguide:
n1 = 3.5 (silicon), n2 = 1.5 (silicon dioxide), n3 = 1.0 (air),
0= 1.3m, and h = 0.15m.
Notethatthesymmetricalandasymmetricalwaveguidesare
similar
0 0.2 0.4 0.6 0.8 1 1.2 1.40
1
2
3
f( )
2( )
1( )
3( )
4( )
k0n1hcos1
2l
u +l
ul
Fundamentalmodeangle1 (radians)
u l
Phase
Change
(radians)
Solutionoftheeigenvalue equationform=0
(silicononinsulator)
20 0.2 0.4 0.6 0.8 1 1.2 1.4 /2
3
2
1
0
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Monomode Conditions
Consider the TE polarisation eigenvalue equation for a
symmetrical waveguide:
=
1
2
1
21
2
110
cos
n
nsin
2
mcoshnktan
Forthesecondmode,m=1,andtheequationbecomes:
i.e.
02
coshnktan c10 =
hn2hnkcos
1
0
10
c
=
=
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Hence for monomode conditions
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Effective Index
Wehaveseenthatpropagationconstantsinthezandy
directionsare:
and
101z sinknk =
101ycosknk =
kz is also known as , the propagation constant in thedirection of the waveguide
Now define a parameter N, called the effective index of the
mode, such that:
11 sinnN =
i.e.
0zNkk ==
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The lower bound on is determined by the larger of thecritical angles of the waveguide, usually at the lower
interface:
2001nksinkn =
l
The upper bound on is governed by the maximum value of,
which is 90o. In this case = k =n1k0. Hence:
2010 nknk
Substituting for = k =Nk0:
21 nNn
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M-line technique
n1
ns
n2
Sidetector
2
1
0 n0
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M-line technique
1.12 1.16 1.20 1.24 1.28 1.32 1.36 1.403
4
5
Intensityinthedetector(a.u.)
effective refractive index
Detector
=633nm
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0 2000 4000 6000 8000 10000 12000
1.0
1.2
1.4
drift=1.3%n
mat
thickness (nm)
no
ne
1.2391.255
1.15
0.5
1.0
TM exp
TM sim
Normalisedintensity
1.15 1.20 1.25 1.30
0.3
0.6
0.9
1.2
TEexp
TE sim
neff
Nice agreement between experiments and
simulations
M-line technique
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Just a little electromagnetic theory
StartingwithMaxwellsequations,ifweassumealoss
less,nonconductingmedium,limitourselvesto
propagationinthezdirection,andconsiderone
polarisationatatime(TEorTM),we canderiveascalar
equationdescribingwavepropagationinourplanar
waveguide:
2
x
2
mm2
x
2
2
x
2
t
E
z
E
y
E
=
+
where m is thepermittivity of the waveguide, m is thepermeability of the waveguide, and in this case the electric
field polarised in the x direction corresponds to TE
polarisation. This is called the scalar wave equation.
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Since there is only electric field in the x direction the general
solution of this field as:
tjzj
xx ey)e(EE
=
This means that there is a field directed (polarised) in the x
direction, with a variation in the y direction yet to be
determined, propagating in the z direction with propagation
constant , with sinusoidal (ejt) time dependence. Thewaveguide configuration is:
Propagationinanasymmetricplanarwaveguide
n1
n2
n3
y x
z
h
k0n1y=h/2
y=h/2
y=0
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Solution of the wave equation provides us withexpressions of the electric fields in the core and
claddings:
Intheuppercladding:
For y(h/2))2hy(k
ux
yu
eEy)(E
=In the core we will have
For -(h/2) y (h/2)yjk
cx
yc
eEy)(E
=In the lower cladding we will have:
For y -(h/2))
2
hy(k
x
y
eEy)(E+
=l
l
Where 22i
22
yinkk
0=
Note that n and ky are written ni and kyi because they can
now represent any of the three media (core, upper cladding,
or lower cladding), by letting i=1, 2, or 3.
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Propagation constants again
In solving the wave equation we assumed field solutions
with propagation constants in the core, and the upper and
lower claddings, but we didnt discuss why the propagationconstants took the form they did.
Our general solution was of the form:
tjzjyk
cx eeeEEy =
However, in the three media, core, upper cladding and lower
cladding, the propagation constant ky took different forms.
In the claddings ky was a real number, whereas in the core
ky was an imaginary number
Totalinternalreflectionoccurs
fielddecaysincladding
partofthefieldpropagatesinthecladding
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Mode Profiles
Now that we have field solutions for modes in the planar
waveguide, we can plot the field distribution, Ex(y) or the
intensity distribution, Ex(y)2. Consider the following
waveguide:
n1 = 3.5, n2 = 1.5, n3 = 1.0, 0= 1.3m, and h = 1.0m.
For even functions, the field in the core is a cosine
function, and in the claddings, an exponential decay.
Therefore, solutions for m=0, and m=2 are even functions,
and are plotted below. The field distribution is plotted form = 0, and the intensity distribution is plotted for m = 2.
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Electricfieldprofileofthefundamentalmode(m=0)
1 106
5 107
0 5 107
1 106
0
0.2
0.4
0.6
0.8
1
EC0( )y
EU0( )y2
EL0 ( )y1
,,y y2 y1
Normalised
Electric
fieldEx(y)
Distanceintheydirection(m)
1 0.5 0 0.5 1
1
0.8
0.6
0.4
0.2
0
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1106
5107
0 5107
11060
0.2
0.4
0.6
0.8
1
IC2( )y
IU2( )y2
IL2( )y1
,,yy2y1
Normalised
Intensity
Ex(y)2
Distanceintheydirection
(m)
Intensityprofileofthe2nd evenmode(m=2)
1 0.5 0 0.5 1
1
0.8
0.6
0.4
0.2
0
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Confinement factor
Howmuchofthepowerpropagatesinsidethecore?
Wecan
define
aconfinement
factor
:
=
dy)y(E
dy)y(E
2
x
2/h
2/h
2
x
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3.0 2D waevguides
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Silicon on Insulator Waveguides
SiO2
Surfaceguidinglayer
siliconsubstrate
SiOSiO22(n(n22))
rh
w
n1
n3
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Modes of two dimensional waveguides
xq,pE
Modesaredesignated
yq,pE
or
q,pHE q,pEHPmaximainthexdirection,qmaximaintheydirection
HenceFundamentalmode:
x1,1E
or y1,1E
Sometimeslabelled
x 0,0E y 0,0E
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The Effective Index Method of analysis
n1
n3y
x
h
w
Firstsolve:
n3
n1
n2
h
Thensolve
n3 neff n3
w
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The Effective Index Method of analysis
EXAMPLE
nn22=1.5=1.5
3m
5m
3.5m
n1 =3.5=3.5
n3 =1.0=1.0
FindeffectiveindexNwg?
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Solution
Firstly decompose the rib structure into vertical and horizontal
planar waveguides This means we must first solve the
horizontal planar waveguide. Since the polarisation is TE, weuse the asymmetrical TE eigenvalue equation:
[ ]
+
=
1
2
1
31
2
1
1
2
1
21
2
1
110cos
n
nsin
tancos
n
nsin
tanmcoshnk
Thisgivesafundamentalmodepropagationangleof
87.92o (1.53456radians),andneffg =n1sin1 =3.4977
Firstplanarwaveguideofthedecomposedribstructure
n1=3.5
n2 =1.5
n3=1.0
h=5m
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We now need to solve the second planar waveguide of the
decomposed rib structure:
(i) First find the effective index of the planar regionseither side of the core.
(ii) Solve the asymmetrical TE eigenvalue equation
again, for r = 3m.
Thisyields
apropagation
angle
of
86.595
o
,and
an
effective
indexfortheplanarregionofneffp =3.4938.
Secondplanarwaveguideofthedecomposedribstructure
neffg=
3.4977neffp =3.4938 neffp =3.4938
w=3.5m
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We can now solve the second decomposed planar
waveguide of the decomposed rib structure, using the
effective indices just calculated. This time the symmetrical
TM eigenvalue equation should be used:
=
wg
effg
effp
wg
effp
effg
1
wgeffg0
cos
n
n
12sin
2
n
n
tan2coswnk
Hence wg is be found. The solution is wg= 88.285o, which
corresponds to an effective index of Nwg= 3.496. Knowing
the effective index we can evaluate all of the propagation
constants of the waveguide. For example we are
particularly interested in :
1
wg0m897.16Nk ==
Note: Highconfinementinsilicon
Differentdegrees
of
confinement
horizontally
&
vertically
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Large single mode rib waveguides
5m planarwaveguide
n1=3.5
n2 =1.5
n3=1.0
h=5m
Firstlyconsidera5mplanarwaveguide:
Fromsection1,theapproximatenumberofmodescanbe
foundas:
= c10maxcoshnk
m
Since
o1
c 4.255.3
5.1sin ==
and hence 25 modes are supported (including the m=0 mode).
24cos10x5x5.3x2
]m[0
c
6
intmax =
=
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Alternativelyconsiderthethicknessrequiredtomakesucha
waveguidesinglemode. Fromsection1:
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Itisthereforealittlesurprisingthatribwaveguideswith
crosssectionaldimensionsofseveralmicronsare
routinelydescribedassinglemodewaveguides.
The answer to this apparent paradox is that, if the
waveguide is correctly designed, higher order modes leak
out of the waveguide over a very short distance, as
demonstrated by Soref et al, in 1991.
Firstly the authors defined a rib waveguide in terms of
some normalising parameters:
nn22
Rib Waveguide definitionsRib Waveguide definitions
2br2b n1
n0
2a
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The authors limited their analysis to waveguides in which
0.5 r < 1.0, because for r 0.5, the effective index ofvertical modes in the planar region either side of the rib,
becomes higher than the effective index of all vertical
modes in the rib, otherthan the fundamental.
They then used an effective index approach to define a
parameter related to the aspect ratio of the rib waveguide,a/b. They then found the limiting condition such that the
EH01and HE01 just failed to be guided. This resulted in a
condition for the aspect ratio:
2r1
r3.0
b
a
+
Inordertodemonstratethistheysimulatedexcitationofhigher
ordermodesandwatchedthemleakoutofthewaveguide.
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Pogossian et al took the experimental data of Rickman &
Reed, and fitted an equation of the form:
c being approximately 0, resulting in a modified equation:
2
r1
rc
b
a
+
2r1
r
b
a
Thesinglemode condition
a/b
r
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Refractive index and loss coefficient in optical waveguides
Complex refractive index can be defined as:
IRjnn'n +=
Andwehaveexpressedapropagatingfieldas:
)tkz(j
0eEE=
Substitutingforpropagationconstantandcomplex
refractiveindex:
tjznkznjk0
)tz'nk(j0 e.e.e.EeEE I0R00 ==
The term exp(-k0nIz) is often re-designated .
The term is called the loss coefficient. The factor of is
included in the definition above because is an intensity
loss coefficient. Therefore we can write :
)2
1exp(
z
0eII=
Thebenchmarkforacceptablewaveguidelossisoftheorder
of1dB/cm. TypicallossesforSOIwaveguidesareintherange
0.1 0.5dB/cm
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The contributions to loss in an optical waveguide
Scattering
Losses result from scattering, absorption, and radiation:
Scattering in an optical waveguide can result from two
sources: volume scattering and interface scattering
Volumescatteringfollowseithera3 dependence,ora1 dependence,asaconsequenceofthetypeand
concentrationof
scattering
centres.
Interfacescatteringhasbeenmodelledbymanyauthors,
butareasonablyaccurateandattractivelysimplemodel
wasproducedbyTien:
where u is the rms roughness for the upper waveguideinterface, lis the rms roughness for the lower waveguideinterface, kyu is the decay constant in the upper cladding, kyl is
decay constant in the lower cladding, and h is the waveguidethickness
++
+
=
l
l
yyu
2
0
2
1
22
u1
3
s
k
1
k
1h
1)(n4
sin2
cos
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Exampleofinterfacescattering
Consider a planar waveguide:
n1 = 3.5; n2 = 1.5; n3 = 1.0; h = 1.0m, and the operatingwavelength 0 = 1.3m. Let us compare the scattering loss of
two different modes of the waveguide, say the TE0 and the TE2
modes.
The propagation angles, 1 of these two are 80.8o (TE0), and
60.7o (TE2). Thus the decay constants in the claddings are
given by:2
i
2
0
22
yi nkk =
Therefore we can evaluate the decay constants for each mode are
as follows:
TE0 TE2
m-1 m-1
m-1
m-1
98.15nkk2
3
2
0
2
yu == 94.13nkk2
3
2
0
2
yu ==
04.15nkk2
2
2
0
2
y ==l 85.12nkk 22202y ==l
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If we now let both u and l equal 1nm, we can evaluate thescattering loss for each mode, for each nanometre of rms
roughness at each interface.
For the TE0 mode,
This is equivalent to a loss of 0.18 dB/cm.
1
yyu
2
0
2
122
u1
3
s cm04.0
k
1
k
1h
1)(n4
sin2
cos =
++
+
=
l
l
For the TE2 mode
This is equivalent to a loss of 5.79 dB/cm.
1
yyu
2
0
2
1
22
u1
3
s cm33.1
k1
k1h
1)(n4
sin2
cos =
++
+
=
l
l
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Absorption
The two main potential sources of absorption loss for
semiconductor waveguides are band edge absorption andfree carrier absorption. If we operate at a wavelength well
away from the band edge, the former is negligible.
Changes in free carrier absorption can be described by
Drude-Lorenz equation:
where e is the electronic charge; c is the velocity of light in
vacuum; e is the electron mobility; h is the holemobility; is the effective mass of electrons; is
the effective mass of holes; Ne is the free electron
concentration; ; Nh is the free hole concentration; 0 is the
permittivity of free space; and 0 is the free space
wavelength.
+
=
2*
chh
h
2*
cee
e
0
32
2
0
3
)m(
N
)m(
N
nc4
e
*
cem*
chm
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Additionallossofsiliconduetofreecarriers
Silicon
=1.3m1018 cm3 electrons
andholesintroduces
anadditionallossof~
2.5cm1. i.e 10.86
dB/cm!
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Radiation Losses in optical waveguides
Ideallynegligible.
Possibility
of
radiation
via
leaky
modesorcurvatureattoofastarate.
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Coupling to the Optical circuit
Couplinglighttoawaveguideisnontrivial. The
mainmethods
are:
(d)endfirecoupling
waveguide
Input
beam
(a)prismcoupling
Inputbeam
waveguide
(b)grating
coupling
(c)buttcoupling
waveguide
Optical
fibre
waveguide
lens
Input
bea
m
Fourtechniquesforcouplinglighttoopticalwaveguides
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Grating couplers
Gratingcouplersallowindividualmodeselection.
Inordertocouplelighttothewaveguide,the
propagationconstants
of
the
exciting
beam
and
the
waveguidemustbematched.
Consideralightrayincidentuponawaveguide
surface:
Lightincidentuponthesurfaceofawaveguide
n1
n2
n3a z
Inmediumn3 thepropagationconstantisk0n3. Thez
directedpropagationconstantinmediumn3 willbe:
a30z sinnkk =
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Therefore the phase-match condition will be
where is the waveguide propagation constant
a30zsinnkk ==
But k0n3. Thereforetheconditioncanneverbemet,sincesina willbelessthanunity. Thisiswhyagratingisrequiredtocouplelightintothewaveguide.
The periodic nature of the grating causes a periodic
modulation of the effective index of the waveguide. For an
optical mode with propagation constant W when the grating
is not present, the modulation results in a series of possible
propagation constants, p given by
where is the period of the grating, and p = 1, 2, 3, etc.
+= p2Wp
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Only the negative values of p can result in a phase match.
It is usual to fabricate the grating such that only p = -1
results in a phase match with a waveguide mode.
Therefore the waveguide propagation constant becomes:
=2
Wp
And the phase match condition becomes:
a30W sinnk2
=
Writing W in terms of the effective index, N,
a300
sinnk2
Nk =
and substituting for k0
a3 sinnN
=
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If medium n3 is air, n3 = 1 and
asinN
=
Because the refractive index of silicon is large, the period of
grating couplers in silicon is of the order of 400nm. The highest
coupling efficiency from gratings in silicon to date has been
reported by Ang et al., who reported an output coupling efficiency
of approximately 70% for rectangular gratings and 84% for a non
symmetrical profile. One of their devices is shown below:
WaveguidecouplerfabricatedinanSOIwaveguide
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Butt coupling and End fire coupling
The efficiency with which the light is coupled into the
waveguide is a function of (i) how well the fields of theexcitation and the waveguide modes match; (ii) the degree
of reflection from the waveguide facet; (iii) the quality of
the waveguide endface; (iv) and the spatial misalignment of
the excitation and waveguide fields.
Overlap of excitation and waveguide fields
The overlap integral of two fields E and , is given by
2
1
22 dxdy.dxEdy
dx..Edy
=
The factor lies between 0 and 1, and therefore representsthe range between 0 coupling and 100% coupling due to
field overlap.
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Theproblemisoftensimplifiedtotheoverlapoftwo
gaussian functions.Let
This represents a waveguide field with 1/e widths in thex
and y direction of 2x and 2y respectively. Similarly let
+
=
2y
2
2x
2 yxexpE
This represents a circularly symmetrical input beam.
( )
+=
2
0
22 yxexp
Using the mathematical identity for a definite integral:
[ ]r2
dx.xrexp0
22 =
The overlap integral reduces to:
2
1
2
0
2
y
2
1
2
0
2
x
2
1
yx0
1111
12
+
+
=
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Since the overlap integral describes the coupling efficiency of
the field profiles, the power coupling efficiency is given by:
+
+
=
2
0
2
y
2
0
2
x
yx
2
2
1111
14
0
Afewexamplesshowhowcouplingefficiencyvaries:
0 x y 2 Loss due to
2 (dBs)
5m 5m 5m 1.0 1.0 0
10m 10m 5m 0.894 0.8 0.97
20m 16m 3m 0.535 0.286 5.4
20m 1m 1m 0.1 0.01 20
5m 5m 3m 0.939 0.882 0.55
5m 4.8m 4.9m 0.999 0.999 0.004
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Reflection from the waveguide facet
UsingtheFresnelequationsfromsection1.
ReflectioncoefficientforTEpolarisationwas:
2211
2211TE
cosncosn
cosncosnr
+
=
Similarly, the reflection coefficient rTM was:
2112
2112TM
cosncosncosncosnr
+=
Using Snells Law rTE reduces to:
)sin(
)sin(r
21
21TE
+
=
Hence the reflectivity R is given by:
)(sin
)(sinrR
21
2
21
22
TE TE +
==
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Similarly RTM can be found to be
)(tan
)(tanrR
212
21
22
TMTM
+
==
The two functions are plotted below for an air/silicon
interface (i.e. n1= 1.0, n2 =3.5).
0 0.2 0.4 0.6 0.8 1 1.2 1.40
0.2
0.4
0.6
0.8
1
RTE( )1
RTM( )1
1
Incidentangle1 (radians)
Reflectance
TM
TE
Reflectionatanair/siliconinterface
1
0.8
0.6
0.4
0.2
00 0.2 0.4 0.6 0.8 1.0 1.2 1.4
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At normal incidence (1=0), the reflection of both TE and TM
polarisations is the same. Furthermore, end-fire coupling
introduces light at near normal incidence. Consequently the
approximation is usually made that the Fresnel reflection at the
waveguide facets is that due to normal incidence. In this case,
reflectivity is:
2
21
21
nn
nnR
+
=
For a silicon/air interface this reflection is approximately
31%, which introduces an additional loss of 1.6dBs. A lossof 1.6dBs for each facet of the waveguide is considerable,
and is reduced in commercial devices by the use of anti-
reflection coatings.
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Anantireflectioncoatinghasathicknessof/4,reducingoreliminatingthereflection.Fornormalincidence,thenet
reflectivityRisgivenby:
where nar is the refractive index of the anti-reflection
coating. R will be zero if:
2
2
ar21
2
ar21
nnn
nnnR
+
=
For a silicon/air interface, nar needs to be approximately
1.87.
For silicon nitride (Si3N4), n = 2.05.
For silicon oxynitride (SiOxNy), n ranges from 1.46 (SiO2)
to 2.05 (Si3N4)
2
ar21 nnn =
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The quality of the waveguide endface
Three main options are available for endface preparation of
semiconductor waveguides: cleaving; polishing; etching.
Polishing is probably the most common method of
preparing a waveguide facet. The sample endface is lapped
with abrasive materials with sequentially decreasing grit
sizes, and can result in an excellent surface finish, although
rounding of the endface is a common failing.
Endfaces can be prepared by chemical or dry etching. The
details are beyond the scope of this course, but suffice to say
it is a technique that can be developed to a sufficiently high
level for commercial applications.
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polished edge
clived edge
The edge problem
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Spatial misalignment of the excitation and waveguide
fields
Alignment is of critical importance due to the very small
dimensions involved. Recall the overlap of exciting and
mode fields:
where
and
2
1
22 dxdy.dxEdy
dx..Edy
=
+
=
2
y
2
2
x
2 yxexpE
( )
+
=2
0
22yx
exp
Letusintroduceandoffset,A, intooneofthefieldequations:
i.e.
( )
+= 2
0
22 )Ay(xexp
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This expression can be re-written as:
( )
++
= 20
222)Ay2Ay(x
exp
Subsequently, the overlap integral equation can be
manipulated into the form:
2
1
22
2
0
2
y
2I
dxdy.dxEdy
dx.Edy.Aexp
+=
i.e.
+= 202
y
2I A
exp
Therefore we can evaluate the term
+=
2
0
2
y
2Aexpoffset
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Offset2 is also evaluated as it represents to additional loss
when considering power transmission (coupling).
The terms are evaluated below for a range of offsets A,
when y = 0 = 5m
0 2 .10 6 4 .10 6 6 .10 6 8 .10 6 1 .10 5 1.2 .10 5 1.4 .10 50
0.2
0.4
0.6
0.8
11
0
C A( )
D A( )
15 100 A
0 2 4 6 8 10 12 14
OffsetA(m)
TheeffectofanoffsetAontheelectricfield
overlapandthepowercouplingefficiency
Offset
andOffset
2
OffsetOffset
2
AnoffsetofA=2mproducesoffset2 of0.85 0.7dB
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Measurement of propagation loss is integrated
optical waveguides
There is often confusion between insertion loss and
propagation loss
Insertion loss and propagation loss
The insertion loss of a device, is the total loss associatedwith introducing that element into a system, and includes
the inherent loss and the coupling losses.
Alternatively, the propagation loss is the loss associated
with propagation in the waveguide alone i.e.
measurement of loss coefficient, .
There are three main experimental techniques associated
with waveguide measurement. These are (i) the cutback
method; (ii) the Fabry-Perot resonancemethod; and (iii)
scattered light measurement.
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1( ) 10log 10log
prop prop
L L
out o in
incoupling
o
I I e I Ce
IdB
I C
= = = =
Origin of the coupling losses
Dimension fiber-waveguide (modal mismatch)
Numerical Aperture
Fresnel Reflection
Misalignement
Defects on the facets
Scattering
Insertion losses in a waveguide:
Intrinsic
Extrinsic
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1 110log ( )
prop propL L
out o in
incoupling
o
I I e I Ce
IdB
C I C
= =
= =
Origin of the propagation losses
Absorption
Scattering
Radiation
Insertion losses in a waveguide:
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Positioning systemFor the fiber.
Nanopositioning system with Piezoelectric actuators
(precision 1nm)
For the sample
Micropositioning system
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The cut-back method
The cut back method is conceptually simple. A waveguide
of length L1 is excited by one of the coupling methods
mentioned, and the output power from the waveguide, I1,
and the input power to the waveguide, I0 are recorded. The
waveguide is then shortened to another length, L2, and the
measurement repeated to determine I2. Hence:
i.e.
))LL(exp(I
I21
2
1 =
=1
2
21 I
Iln
LL
1
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I = I0 e-L
L1
Laser in
Fotodiode
Waveguide
I
LL1
Cut-back technique
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I
LL1L2
I = I0 e-L
L2
Laser in
Fotodiode
Waveguid
e
Cut-back technique
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I
LL1L2L3
I = I0 e-L
L3
Laserin
Fotodi
ode
Waveg
uide
Cut-back technique
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I
LL1L2L3L4
I = I0 e-L
L
4
Laser in
Fotodio
de
Waveg
uide
ln(I)
LL1L2L3L4
ln (I)= ln(I0) - L
Cut-back technique
L=0
ln(I)=ln(I0)=ln(Iin)+ln(C)
MeasurableEstimaton of
the coupling losses
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The accuracy of the technique can be improved by taking
multiple measurements and plotting a graph
Optical
Loss
(dBs)
Propagationlength
(cm)
Note that the data presented is now insertion loss for eachdevice length, not propagation loss. Hence the loss at zero
propagation loss represents coupling loss.
A useful variation of the cut-back method, is to carry out an
insertion loss measurement for a single waveguide length,
and calculate the coupling. Whilst this technique is less, it
has the enormous advantage of being non-destructive
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Similar technique
Equivalent to cut-back but without the coupling lossesproblems
Losses from a curve
Propagation losses
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The Fabry-Perot resonance method
An optical waveguide with polished end faces (facets), is
similar in structure to the cavity of a laser, and may be
regarded as a potentially resonant cavity. Such a cavity is
called a Fabry-Perot cavity. The optical intensity
transmitted through such a cavity, It, is related to the
incident light intensity, I0, by the well known equation:
where R is the facet reflectivity, L is the waveguide
length, is the loss coefficient, and is the phasedifference between successive waves in the cavity
)
2
(sinRe4)Re1(
e)R1(
I
I
2L2L
L2
0
t
+
=
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This transfer function has a maximum value when =0 (or
multiples of 2), and a minimum value when =. i.e. :
2L
L2
L2L
L2
0
min
)Re1(
e)R1(
Re4)Re1(
e)R1(
I
I
+
=+
=
2L
L2
0
max
)Re1(
e)R1(
I
I
=
Which we can rearrange as:
+
= 11
R
1lnL
1
Ifweknowthereflectivity,R,ifwecanmeasure,thelosscoefficientcanbeevaluated.
Thereforeifwecansweepthroughafewcyclesof2,canbemeasured. Suchcyclingcanbeachieved
thermally,or
by
varying
the
wavelength
of
the
light
source.
Therefore the ratio of the maximum intensity to minimum
intensity, , is:
2L
2L
min
max
)Re1(
)Re1(
I
I
+
==
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0 5 10 15 20 250
0.2
0.4
0.6
0.8
11
0
FP1 ( )
FP2 ( )
FP3 ( )
8 0
Plot of the Fabry-Perot transfer function for
three different mirror reflectivities
R=0.5
R=0.31
R=0.1
It/I0
(radians)
IminImax
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1550.00 1550.05 1550.10 1550.15 1550.20 1550.25
0.25
0.30
0.35
0.40
0.45
0.50
0.55
0.60
0.65
intensity(arb.units)
wavelength(nm)
FabryPerotscanofasinglemode
waveguide
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FabryPerotscanofamultimode
waveguide
1550.00 1550.05 1550.10 1550.15 1550.20 1550.25
0.4
0.5
0.6
0.7
0.8
0.9
intensity(arb.units)
wavelength(nm)
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Scattered Light Measurement
The measurement of scattered light from the surface of a
waveguide can be used to determine the loss. The assumption is
that the amount of light scattered is proportional to the
propagating light. Therefore, the rate of decay of scattered light
with length will mimic the rate of decay of light in the waveguide.
However, it is clear that light is only scattered significantly if the
loss of the waveguide is high, so this approach has limited uses.
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Scattering light collection
0 5 10 15 20 25 30 35
= 0.1 0.07 dB/cm
Si3N4 channel =780nm
Ln
Intensity
[a.u.]
Length [mm]
The sample has to be quite lossy
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Examplesofmicromachining: