Photonic Materials 3_Waveguides

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    PhotonicMaterials

    Frank GellDaniel Navarro

    1

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    TABLE OF CONTENTS

    3. Fundamentals of waveguides 1D and 2D waveguides: fundamentals andexperimental characterization.

    Reference: Silicon photonics: an introductionGraham T. Reed andAndrew P. Knights

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    n2

    n1

    2211 sinnsinn =

    1

    2n2

    n1

    Ei Er

    Et

    Lightraysrefractedandreflectedattheinterfaceoftwomedia

    1

    c

    TheRay Optics Approach to Describing Planar Waveguides

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    n1

    n2

    211 nsinn =

    1

    2c

    nnsin =

    Totalinternalreflectionattwointerfacesdemonstrating

    theconceptofawaveguide

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    Reflection Coefficients

    irE.rE =

    where r is a complex reflection coefficient, which ispolarisation dependant

    The Transverse Electric (TE) condition is defined as the

    condition when the electric fields of the waves are

    perpendicular to the plane of incidence.

    Correspondingly, the Transverse Magnetic (TM) conditionoccurs when the magnetic fields are perpendicular to the

    plane of incidence.

    n2

    n1

    Ei Er

    Et

    Circlesindicatethattheelectricfieldsarevertical(i.e.comingoutof

    screen)

    OrientationofelectricfieldsforTEincidenceattheinterface

    between2media.

    interface

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    The reflection coefficients rTE and rTM, are described by the

    Fresnel formulae

    For TE polarisation:

    2211

    2211TE

    cosncosn

    cosncosnr

    +

    =

    For TM polarisation:

    2112

    2112TM

    cosncosn

    cosncosnr

    +=

    Using Snells Law:

    1

    22

    1

    2

    211

    1

    22

    1

    2

    211TE

    sinnncosn

    sinnncosnr

    +

    =

    And

    1

    22

    1

    2

    211

    2

    2

    1

    22

    1

    2

    211

    2

    2

    TM

    sinnnncosn

    sinnnncosnr

    +

    =

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    If1isgreaterthanc

    ( ) 2j

    j j

    j

    a jb er e e

    a jb e

    and

    = = = =

    +

    1r =

    Where TE and TM are given by:

    and

    1

    2

    1

    21

    2

    1

    TEcos

    n

    nsin

    tan2

    =

    1

    1

    2

    1

    2

    2

    2

    2

    1

    1

    TM

    cosn

    n

    1sinn

    n

    tan2

    =

    Which arenegative indeed

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    Butrrelatesreflectedfields. Powerisdescribedby

    thePoynting Vector

    2

    m

    m2 EEZ

    1S

    ==

    And

    reflected

    power

    is

    related

    by

    reflectance

    R:

    2

    2

    i

    2

    r

    i

    r rE

    E

    S

    SR ===

    where E is electric field, m is the permittivity of themedium, m is the permeability of the medium, and Z is theimpedance of the medium

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    Phase of a propagating wave and its wavevector

    Let

    and

    Where z is the direction of propagation

    )]tkz(jexp[EE0 =

    )]tkz(jexp[HH 0 =

    Therefore,phase

    is

    tkz =

    The phase varies with time (t), and with distance (z). These

    variations are quantified by taking the time derivative and the

    spatial derivatives:

    where is angular frequency (rads/sec), and f is frequency (Hz).

    f2t

    ==

    kz

    =

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    k is the wavevector (propagation constant) in the direction

    of the wavefront. It is related to wavelength, , by:

    =2

    k

    In free space k = k0, and

    Hence in free space,

    0nkk=

    0

    0

    2

    k

    =

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    Modes of a planar waveguide

    Thewavevector inaplanarwaveguide

    n1

    n2

    n3

    y

    x

    z

    hk0n1

    We can decompose the wavevector k, into two components,

    in the y and z directions.

    1k=n1k0

    kz=n1k0sin1

    ky=n1k0cos1

    Therelationshipbetweenpropagationconstantsinthey,z,

    andwavenormal directions

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    We require self consistency condition. As the wave reflects

    twice it reproduces itself. The total phase shift must be a

    multiple of 2, hence:

    12 cos AC AB h =

    = m2coshnk2 u110 l

    , since we have seen that reflection coefficients give a phase

    change upon reflection. We have refered to these phase

    shifts as u, and l respectively.

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    Theplanarwaveguide

    n1

    n2

    n3

    y

    x

    z

    h

    0 1 12 cos 2uk n h m =l

    Thuslightpropagatesindiscretemodesdescribedbythe

    polarisationandthemodenumber.

    E.g.TE0,TE1,TM0,etc

    Eachmodewillhaveauniquepropagationconstantinthe

    yandzdirections

    Thenumberofmodesislimitedbysatisfactionofthe

    requirementsoftotalinternalreflection.

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    The Symmetrical planar waveguide

    Inthesymmetricalplanarwaveguide,n2 =n3,andhence

    u=l. ThereforeforTEpolarisation,theequationbecomes:

    This can be rearranged as :

    =

    m2cos

    n

    nsin

    tan4coshnk2

    1

    2

    1

    21

    2

    1

    110

    =

    1

    2

    1

    21

    2

    110

    cosn

    nsin

    2mcoshnktan

    Laterwewillsolvethisequationforangle1

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    Wecanfindtheapproximatenumberofmodessupportedby

    thewaveguideasfollows:

    The minimum value that 1 can take is c. i.e.

    1

    2c

    n

    nsin =

    Hence the right hand side of the previous equation reduces

    to zero and the equation becomes:

    02

    mcoshnk maxc10 =

    rearranging for m, the mode number,

    = c10max

    coshnkm

    Numberofmodes=[mmax]int +1,sincethelowestorder

    mode(usuallycalledthefundamentalmode),hasamode

    numberm=0.Notethatthesymmetricalwaveguideis

    nevercut

    off.

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    The Asymmetrical planar waveguide

    n2 n3,andu l ,hence

    Propagationin

    an

    asymmetric

    planar

    waveguide

    n1

    n2

    n3

    y

    x

    z

    h

    [ ]

    +

    =

    1

    2

    1

    31

    2

    1

    1

    2

    1

    21

    2

    1

    110cos

    n

    nsin

    tancos

    n

    nsin

    tanmcoshnk

    Notethatthereisnotalwaysasolutionform=0,hencethe

    asymmetricalguidemaybecutoff.

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    Solving the eigenvalue equation for symmetrical and

    asymmetrical waveguides

    Let n1 = 1.5, n2 = 1.49, n3 = 1.40, 0= 1.3m, and h = 0.3m,

    and TE polarisation.

    Notethattheasymmetricalwaveguideiscutoff,whereasthe

    symmetricalwaveguideisnot

    0 0.2 0.4 0.6 0.8 1 1.2 1.40

    1

    2

    3

    f( )

    2( )

    1( )

    3( )

    4( )

    u l

    k0n1hcos1

    l

    2u

    u +l u

    Phase

    Change

    (radians)

    Fundamentalmode

    angle

    1 (radians)

    Solutionoftheeigenvalue equationform=0

    Solutionfor1

    20 0.2 0.4 0.6 0.8 1 1.2 1.4 /2

    3

    2

    1

    0

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    Now consider a silicon waveguide:

    n1 = 3.5 (silicon), n2 = 1.5 (silicon dioxide), n3 = 1.0 (air),

    0= 1.3m, and h = 0.15m.

    Notethatthesymmetricalandasymmetricalwaveguidesare

    similar

    0 0.2 0.4 0.6 0.8 1 1.2 1.40

    1

    2

    3

    f( )

    2( )

    1( )

    3( )

    4( )

    k0n1hcos1

    2l

    u +l

    ul

    Fundamentalmodeangle1 (radians)

    u l

    Phase

    Change

    (radians)

    Solutionoftheeigenvalue equationform=0

    (silicononinsulator)

    20 0.2 0.4 0.6 0.8 1 1.2 1.4 /2

    3

    2

    1

    0

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    Monomode Conditions

    Consider the TE polarisation eigenvalue equation for a

    symmetrical waveguide:

    =

    1

    2

    1

    21

    2

    110

    cos

    n

    nsin

    2

    mcoshnktan

    Forthesecondmode,m=1,andtheequationbecomes:

    i.e.

    02

    coshnktan c10 =

    hn2hnkcos

    1

    0

    10

    c

    =

    =

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    Hence for monomode conditions

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    Effective Index

    Wehaveseenthatpropagationconstantsinthezandy

    directionsare:

    and

    101z sinknk =

    101ycosknk =

    kz is also known as , the propagation constant in thedirection of the waveguide

    Now define a parameter N, called the effective index of the

    mode, such that:

    11 sinnN =

    i.e.

    0zNkk ==

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    The lower bound on is determined by the larger of thecritical angles of the waveguide, usually at the lower

    interface:

    2001nksinkn =

    l

    The upper bound on is governed by the maximum value of,

    which is 90o. In this case = k =n1k0. Hence:

    2010 nknk

    Substituting for = k =Nk0:

    21 nNn

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    M-line technique

    n1

    ns

    n2

    Sidetector

    2

    1

    0 n0

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    M-line technique

    1.12 1.16 1.20 1.24 1.28 1.32 1.36 1.403

    4

    5

    Intensityinthedetector(a.u.)

    effective refractive index

    Detector

    =633nm

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    0 2000 4000 6000 8000 10000 12000

    1.0

    1.2

    1.4

    drift=1.3%n

    mat

    thickness (nm)

    no

    ne

    1.2391.255

    1.15

    0.5

    1.0

    TM exp

    TM sim

    Normalisedintensity

    1.15 1.20 1.25 1.30

    0.3

    0.6

    0.9

    1.2

    TEexp

    TE sim

    neff

    Nice agreement between experiments and

    simulations

    M-line technique

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    Just a little electromagnetic theory

    StartingwithMaxwellsequations,ifweassumealoss

    less,nonconductingmedium,limitourselvesto

    propagationinthezdirection,andconsiderone

    polarisationatatime(TEorTM),we canderiveascalar

    equationdescribingwavepropagationinourplanar

    waveguide:

    2

    x

    2

    mm2

    x

    2

    2

    x

    2

    t

    E

    z

    E

    y

    E

    =

    +

    where m is thepermittivity of the waveguide, m is thepermeability of the waveguide, and in this case the electric

    field polarised in the x direction corresponds to TE

    polarisation. This is called the scalar wave equation.

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    Since there is only electric field in the x direction the general

    solution of this field as:

    tjzj

    xx ey)e(EE

    =

    This means that there is a field directed (polarised) in the x

    direction, with a variation in the y direction yet to be

    determined, propagating in the z direction with propagation

    constant , with sinusoidal (ejt) time dependence. Thewaveguide configuration is:

    Propagationinanasymmetricplanarwaveguide

    n1

    n2

    n3

    y x

    z

    h

    k0n1y=h/2

    y=h/2

    y=0

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    Solution of the wave equation provides us withexpressions of the electric fields in the core and

    claddings:

    Intheuppercladding:

    For y(h/2))2hy(k

    ux

    yu

    eEy)(E

    =In the core we will have

    For -(h/2) y (h/2)yjk

    cx

    yc

    eEy)(E

    =In the lower cladding we will have:

    For y -(h/2))

    2

    hy(k

    x

    y

    eEy)(E+

    =l

    l

    Where 22i

    22

    yinkk

    0=

    Note that n and ky are written ni and kyi because they can

    now represent any of the three media (core, upper cladding,

    or lower cladding), by letting i=1, 2, or 3.

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    Propagation constants again

    In solving the wave equation we assumed field solutions

    with propagation constants in the core, and the upper and

    lower claddings, but we didnt discuss why the propagationconstants took the form they did.

    Our general solution was of the form:

    tjzjyk

    cx eeeEEy =

    However, in the three media, core, upper cladding and lower

    cladding, the propagation constant ky took different forms.

    In the claddings ky was a real number, whereas in the core

    ky was an imaginary number

    Totalinternalreflectionoccurs

    fielddecaysincladding

    partofthefieldpropagatesinthecladding

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    Mode Profiles

    Now that we have field solutions for modes in the planar

    waveguide, we can plot the field distribution, Ex(y) or the

    intensity distribution, Ex(y)2. Consider the following

    waveguide:

    n1 = 3.5, n2 = 1.5, n3 = 1.0, 0= 1.3m, and h = 1.0m.

    For even functions, the field in the core is a cosine

    function, and in the claddings, an exponential decay.

    Therefore, solutions for m=0, and m=2 are even functions,

    and are plotted below. The field distribution is plotted form = 0, and the intensity distribution is plotted for m = 2.

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    Electricfieldprofileofthefundamentalmode(m=0)

    1 106

    5 107

    0 5 107

    1 106

    0

    0.2

    0.4

    0.6

    0.8

    1

    EC0( )y

    EU0( )y2

    EL0 ( )y1

    ,,y y2 y1

    Normalised

    Electric

    fieldEx(y)

    Distanceintheydirection(m)

    1 0.5 0 0.5 1

    1

    0.8

    0.6

    0.4

    0.2

    0

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    1106

    5107

    0 5107

    11060

    0.2

    0.4

    0.6

    0.8

    1

    IC2( )y

    IU2( )y2

    IL2( )y1

    ,,yy2y1

    Normalised

    Intensity

    Ex(y)2

    Distanceintheydirection

    (m)

    Intensityprofileofthe2nd evenmode(m=2)

    1 0.5 0 0.5 1

    1

    0.8

    0.6

    0.4

    0.2

    0

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    Confinement factor

    Howmuchofthepowerpropagatesinsidethecore?

    Wecan

    define

    aconfinement

    factor

    :

    =

    dy)y(E

    dy)y(E

    2

    x

    2/h

    2/h

    2

    x

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    3.0 2D waevguides

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    Silicon on Insulator Waveguides

    SiO2

    Surfaceguidinglayer

    siliconsubstrate

    SiOSiO22(n(n22))

    rh

    w

    n1

    n3

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    Modes of two dimensional waveguides

    xq,pE

    Modesaredesignated

    yq,pE

    or

    q,pHE q,pEHPmaximainthexdirection,qmaximaintheydirection

    HenceFundamentalmode:

    x1,1E

    or y1,1E

    Sometimeslabelled

    x 0,0E y 0,0E

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    The Effective Index Method of analysis

    n1

    n3y

    x

    h

    w

    Firstsolve:

    n3

    n1

    n2

    h

    Thensolve

    n3 neff n3

    w

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    The Effective Index Method of analysis

    EXAMPLE

    nn22=1.5=1.5

    3m

    5m

    3.5m

    n1 =3.5=3.5

    n3 =1.0=1.0

    FindeffectiveindexNwg?

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    Solution

    Firstly decompose the rib structure into vertical and horizontal

    planar waveguides This means we must first solve the

    horizontal planar waveguide. Since the polarisation is TE, weuse the asymmetrical TE eigenvalue equation:

    [ ]

    +

    =

    1

    2

    1

    31

    2

    1

    1

    2

    1

    21

    2

    1

    110cos

    n

    nsin

    tancos

    n

    nsin

    tanmcoshnk

    Thisgivesafundamentalmodepropagationangleof

    87.92o (1.53456radians),andneffg =n1sin1 =3.4977

    Firstplanarwaveguideofthedecomposedribstructure

    n1=3.5

    n2 =1.5

    n3=1.0

    h=5m

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    We now need to solve the second planar waveguide of the

    decomposed rib structure:

    (i) First find the effective index of the planar regionseither side of the core.

    (ii) Solve the asymmetrical TE eigenvalue equation

    again, for r = 3m.

    Thisyields

    apropagation

    angle

    of

    86.595

    o

    ,and

    an

    effective

    indexfortheplanarregionofneffp =3.4938.

    Secondplanarwaveguideofthedecomposedribstructure

    neffg=

    3.4977neffp =3.4938 neffp =3.4938

    w=3.5m

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    We can now solve the second decomposed planar

    waveguide of the decomposed rib structure, using the

    effective indices just calculated. This time the symmetrical

    TM eigenvalue equation should be used:

    =

    wg

    effg

    effp

    wg

    effp

    effg

    1

    wgeffg0

    cos

    n

    n

    12sin

    2

    n

    n

    tan2coswnk

    Hence wg is be found. The solution is wg= 88.285o, which

    corresponds to an effective index of Nwg= 3.496. Knowing

    the effective index we can evaluate all of the propagation

    constants of the waveguide. For example we are

    particularly interested in :

    1

    wg0m897.16Nk ==

    Note: Highconfinementinsilicon

    Differentdegrees

    of

    confinement

    horizontally

    &

    vertically

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    Large single mode rib waveguides

    5m planarwaveguide

    n1=3.5

    n2 =1.5

    n3=1.0

    h=5m

    Firstlyconsidera5mplanarwaveguide:

    Fromsection1,theapproximatenumberofmodescanbe

    foundas:

    = c10maxcoshnk

    m

    Since

    o1

    c 4.255.3

    5.1sin ==

    and hence 25 modes are supported (including the m=0 mode).

    24cos10x5x5.3x2

    ]m[0

    c

    6

    intmax =

    =

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    Alternativelyconsiderthethicknessrequiredtomakesucha

    waveguidesinglemode. Fromsection1:

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    Itisthereforealittlesurprisingthatribwaveguideswith

    crosssectionaldimensionsofseveralmicronsare

    routinelydescribedassinglemodewaveguides.

    The answer to this apparent paradox is that, if the

    waveguide is correctly designed, higher order modes leak

    out of the waveguide over a very short distance, as

    demonstrated by Soref et al, in 1991.

    Firstly the authors defined a rib waveguide in terms of

    some normalising parameters:

    nn22

    Rib Waveguide definitionsRib Waveguide definitions

    2br2b n1

    n0

    2a

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    The authors limited their analysis to waveguides in which

    0.5 r < 1.0, because for r 0.5, the effective index ofvertical modes in the planar region either side of the rib,

    becomes higher than the effective index of all vertical

    modes in the rib, otherthan the fundamental.

    They then used an effective index approach to define a

    parameter related to the aspect ratio of the rib waveguide,a/b. They then found the limiting condition such that the

    EH01and HE01 just failed to be guided. This resulted in a

    condition for the aspect ratio:

    2r1

    r3.0

    b

    a

    +

    Inordertodemonstratethistheysimulatedexcitationofhigher

    ordermodesandwatchedthemleakoutofthewaveguide.

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    Pogossian et al took the experimental data of Rickman &

    Reed, and fitted an equation of the form:

    c being approximately 0, resulting in a modified equation:

    2

    r1

    rc

    b

    a

    +

    2r1

    r

    b

    a

    Thesinglemode condition

    a/b

    r

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    Refractive index and loss coefficient in optical waveguides

    Complex refractive index can be defined as:

    IRjnn'n +=

    Andwehaveexpressedapropagatingfieldas:

    )tkz(j

    0eEE=

    Substitutingforpropagationconstantandcomplex

    refractiveindex:

    tjznkznjk0

    )tz'nk(j0 e.e.e.EeEE I0R00 ==

    The term exp(-k0nIz) is often re-designated .

    The term is called the loss coefficient. The factor of is

    included in the definition above because is an intensity

    loss coefficient. Therefore we can write :

    )2

    1exp(

    z

    0eII=

    Thebenchmarkforacceptablewaveguidelossisoftheorder

    of1dB/cm. TypicallossesforSOIwaveguidesareintherange

    0.1 0.5dB/cm

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    The contributions to loss in an optical waveguide

    Scattering

    Losses result from scattering, absorption, and radiation:

    Scattering in an optical waveguide can result from two

    sources: volume scattering and interface scattering

    Volumescatteringfollowseithera3 dependence,ora1 dependence,asaconsequenceofthetypeand

    concentrationof

    scattering

    centres.

    Interfacescatteringhasbeenmodelledbymanyauthors,

    butareasonablyaccurateandattractivelysimplemodel

    wasproducedbyTien:

    where u is the rms roughness for the upper waveguideinterface, lis the rms roughness for the lower waveguideinterface, kyu is the decay constant in the upper cladding, kyl is

    decay constant in the lower cladding, and h is the waveguidethickness

    ++

    +

    =

    l

    l

    yyu

    2

    0

    2

    1

    22

    u1

    3

    s

    k

    1

    k

    1h

    1)(n4

    sin2

    cos

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    Exampleofinterfacescattering

    Consider a planar waveguide:

    n1 = 3.5; n2 = 1.5; n3 = 1.0; h = 1.0m, and the operatingwavelength 0 = 1.3m. Let us compare the scattering loss of

    two different modes of the waveguide, say the TE0 and the TE2

    modes.

    The propagation angles, 1 of these two are 80.8o (TE0), and

    60.7o (TE2). Thus the decay constants in the claddings are

    given by:2

    i

    2

    0

    22

    yi nkk =

    Therefore we can evaluate the decay constants for each mode are

    as follows:

    TE0 TE2

    m-1 m-1

    m-1

    m-1

    98.15nkk2

    3

    2

    0

    2

    yu == 94.13nkk2

    3

    2

    0

    2

    yu ==

    04.15nkk2

    2

    2

    0

    2

    y ==l 85.12nkk 22202y ==l

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    If we now let both u and l equal 1nm, we can evaluate thescattering loss for each mode, for each nanometre of rms

    roughness at each interface.

    For the TE0 mode,

    This is equivalent to a loss of 0.18 dB/cm.

    1

    yyu

    2

    0

    2

    122

    u1

    3

    s cm04.0

    k

    1

    k

    1h

    1)(n4

    sin2

    cos =

    ++

    +

    =

    l

    l

    For the TE2 mode

    This is equivalent to a loss of 5.79 dB/cm.

    1

    yyu

    2

    0

    2

    1

    22

    u1

    3

    s cm33.1

    k1

    k1h

    1)(n4

    sin2

    cos =

    ++

    +

    =

    l

    l

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    Absorption

    The two main potential sources of absorption loss for

    semiconductor waveguides are band edge absorption andfree carrier absorption. If we operate at a wavelength well

    away from the band edge, the former is negligible.

    Changes in free carrier absorption can be described by

    Drude-Lorenz equation:

    where e is the electronic charge; c is the velocity of light in

    vacuum; e is the electron mobility; h is the holemobility; is the effective mass of electrons; is

    the effective mass of holes; Ne is the free electron

    concentration; ; Nh is the free hole concentration; 0 is the

    permittivity of free space; and 0 is the free space

    wavelength.

    +

    =

    2*

    chh

    h

    2*

    cee

    e

    0

    32

    2

    0

    3

    )m(

    N

    )m(

    N

    nc4

    e

    *

    cem*

    chm

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    Additionallossofsiliconduetofreecarriers

    Silicon

    =1.3m1018 cm3 electrons

    andholesintroduces

    anadditionallossof~

    2.5cm1. i.e 10.86

    dB/cm!

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    Radiation Losses in optical waveguides

    Ideallynegligible.

    Possibility

    of

    radiation

    via

    leaky

    modesorcurvatureattoofastarate.

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    Coupling to the Optical circuit

    Couplinglighttoawaveguideisnontrivial. The

    mainmethods

    are:

    (d)endfirecoupling

    waveguide

    Input

    beam

    (a)prismcoupling

    Inputbeam

    waveguide

    (b)grating

    coupling

    (c)buttcoupling

    waveguide

    Optical

    fibre

    waveguide

    lens

    Input

    bea

    m

    Fourtechniquesforcouplinglighttoopticalwaveguides

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    Grating couplers

    Gratingcouplersallowindividualmodeselection.

    Inordertocouplelighttothewaveguide,the

    propagationconstants

    of

    the

    exciting

    beam

    and

    the

    waveguidemustbematched.

    Consideralightrayincidentuponawaveguide

    surface:

    Lightincidentuponthesurfaceofawaveguide

    n1

    n2

    n3a z

    Inmediumn3 thepropagationconstantisk0n3. Thez

    directedpropagationconstantinmediumn3 willbe:

    a30z sinnkk =

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    Therefore the phase-match condition will be

    where is the waveguide propagation constant

    a30zsinnkk ==

    But k0n3. Thereforetheconditioncanneverbemet,sincesina willbelessthanunity. Thisiswhyagratingisrequiredtocouplelightintothewaveguide.

    The periodic nature of the grating causes a periodic

    modulation of the effective index of the waveguide. For an

    optical mode with propagation constant W when the grating

    is not present, the modulation results in a series of possible

    propagation constants, p given by

    where is the period of the grating, and p = 1, 2, 3, etc.

    += p2Wp

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    Only the negative values of p can result in a phase match.

    It is usual to fabricate the grating such that only p = -1

    results in a phase match with a waveguide mode.

    Therefore the waveguide propagation constant becomes:

    =2

    Wp

    And the phase match condition becomes:

    a30W sinnk2

    =

    Writing W in terms of the effective index, N,

    a300

    sinnk2

    Nk =

    and substituting for k0

    a3 sinnN

    =

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    If medium n3 is air, n3 = 1 and

    asinN

    =

    Because the refractive index of silicon is large, the period of

    grating couplers in silicon is of the order of 400nm. The highest

    coupling efficiency from gratings in silicon to date has been

    reported by Ang et al., who reported an output coupling efficiency

    of approximately 70% for rectangular gratings and 84% for a non

    symmetrical profile. One of their devices is shown below:

    WaveguidecouplerfabricatedinanSOIwaveguide

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    Butt coupling and End fire coupling

    The efficiency with which the light is coupled into the

    waveguide is a function of (i) how well the fields of theexcitation and the waveguide modes match; (ii) the degree

    of reflection from the waveguide facet; (iii) the quality of

    the waveguide endface; (iv) and the spatial misalignment of

    the excitation and waveguide fields.

    Overlap of excitation and waveguide fields

    The overlap integral of two fields E and , is given by

    2

    1

    22 dxdy.dxEdy

    dx..Edy

    =

    The factor lies between 0 and 1, and therefore representsthe range between 0 coupling and 100% coupling due to

    field overlap.

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    Theproblemisoftensimplifiedtotheoverlapoftwo

    gaussian functions.Let

    This represents a waveguide field with 1/e widths in thex

    and y direction of 2x and 2y respectively. Similarly let

    +

    =

    2y

    2

    2x

    2 yxexpE

    This represents a circularly symmetrical input beam.

    ( )

    +=

    2

    0

    22 yxexp

    Using the mathematical identity for a definite integral:

    [ ]r2

    dx.xrexp0

    22 =

    The overlap integral reduces to:

    2

    1

    2

    0

    2

    y

    2

    1

    2

    0

    2

    x

    2

    1

    yx0

    1111

    12

    +

    +

    =

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    Since the overlap integral describes the coupling efficiency of

    the field profiles, the power coupling efficiency is given by:

    +

    +

    =

    2

    0

    2

    y

    2

    0

    2

    x

    yx

    2

    2

    1111

    14

    0

    Afewexamplesshowhowcouplingefficiencyvaries:

    0 x y 2 Loss due to

    2 (dBs)

    5m 5m 5m 1.0 1.0 0

    10m 10m 5m 0.894 0.8 0.97

    20m 16m 3m 0.535 0.286 5.4

    20m 1m 1m 0.1 0.01 20

    5m 5m 3m 0.939 0.882 0.55

    5m 4.8m 4.9m 0.999 0.999 0.004

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    Reflection from the waveguide facet

    UsingtheFresnelequationsfromsection1.

    ReflectioncoefficientforTEpolarisationwas:

    2211

    2211TE

    cosncosn

    cosncosnr

    +

    =

    Similarly, the reflection coefficient rTM was:

    2112

    2112TM

    cosncosncosncosnr

    +=

    Using Snells Law rTE reduces to:

    )sin(

    )sin(r

    21

    21TE

    +

    =

    Hence the reflectivity R is given by:

    )(sin

    )(sinrR

    21

    2

    21

    22

    TE TE +

    ==

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    Similarly RTM can be found to be

    )(tan

    )(tanrR

    212

    21

    22

    TMTM

    +

    ==

    The two functions are plotted below for an air/silicon

    interface (i.e. n1= 1.0, n2 =3.5).

    0 0.2 0.4 0.6 0.8 1 1.2 1.40

    0.2

    0.4

    0.6

    0.8

    1

    RTE( )1

    RTM( )1

    1

    Incidentangle1 (radians)

    Reflectance

    TM

    TE

    Reflectionatanair/siliconinterface

    1

    0.8

    0.6

    0.4

    0.2

    00 0.2 0.4 0.6 0.8 1.0 1.2 1.4

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    At normal incidence (1=0), the reflection of both TE and TM

    polarisations is the same. Furthermore, end-fire coupling

    introduces light at near normal incidence. Consequently the

    approximation is usually made that the Fresnel reflection at the

    waveguide facets is that due to normal incidence. In this case,

    reflectivity is:

    2

    21

    21

    nn

    nnR

    +

    =

    For a silicon/air interface this reflection is approximately

    31%, which introduces an additional loss of 1.6dBs. A lossof 1.6dBs for each facet of the waveguide is considerable,

    and is reduced in commercial devices by the use of anti-

    reflection coatings.

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    Anantireflectioncoatinghasathicknessof/4,reducingoreliminatingthereflection.Fornormalincidence,thenet

    reflectivityRisgivenby:

    where nar is the refractive index of the anti-reflection

    coating. R will be zero if:

    2

    2

    ar21

    2

    ar21

    nnn

    nnnR

    +

    =

    For a silicon/air interface, nar needs to be approximately

    1.87.

    For silicon nitride (Si3N4), n = 2.05.

    For silicon oxynitride (SiOxNy), n ranges from 1.46 (SiO2)

    to 2.05 (Si3N4)

    2

    ar21 nnn =

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    The quality of the waveguide endface

    Three main options are available for endface preparation of

    semiconductor waveguides: cleaving; polishing; etching.

    Polishing is probably the most common method of

    preparing a waveguide facet. The sample endface is lapped

    with abrasive materials with sequentially decreasing grit

    sizes, and can result in an excellent surface finish, although

    rounding of the endface is a common failing.

    Endfaces can be prepared by chemical or dry etching. The

    details are beyond the scope of this course, but suffice to say

    it is a technique that can be developed to a sufficiently high

    level for commercial applications.

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    polished edge

    clived edge

    The edge problem

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    Spatial misalignment of the excitation and waveguide

    fields

    Alignment is of critical importance due to the very small

    dimensions involved. Recall the overlap of exciting and

    mode fields:

    where

    and

    2

    1

    22 dxdy.dxEdy

    dx..Edy

    =

    +

    =

    2

    y

    2

    2

    x

    2 yxexpE

    ( )

    +

    =2

    0

    22yx

    exp

    Letusintroduceandoffset,A, intooneofthefieldequations:

    i.e.

    ( )

    += 2

    0

    22 )Ay(xexp

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    This expression can be re-written as:

    ( )

    ++

    = 20

    222)Ay2Ay(x

    exp

    Subsequently, the overlap integral equation can be

    manipulated into the form:

    2

    1

    22

    2

    0

    2

    y

    2I

    dxdy.dxEdy

    dx.Edy.Aexp

    +=

    i.e.

    += 202

    y

    2I A

    exp

    Therefore we can evaluate the term

    +=

    2

    0

    2

    y

    2Aexpoffset

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    Offset2 is also evaluated as it represents to additional loss

    when considering power transmission (coupling).

    The terms are evaluated below for a range of offsets A,

    when y = 0 = 5m

    0 2 .10 6 4 .10 6 6 .10 6 8 .10 6 1 .10 5 1.2 .10 5 1.4 .10 50

    0.2

    0.4

    0.6

    0.8

    11

    0

    C A( )

    D A( )

    15 100 A

    0 2 4 6 8 10 12 14

    OffsetA(m)

    TheeffectofanoffsetAontheelectricfield

    overlapandthepowercouplingefficiency

    Offset

    andOffset

    2

    OffsetOffset

    2

    AnoffsetofA=2mproducesoffset2 of0.85 0.7dB

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    Measurement of propagation loss is integrated

    optical waveguides

    There is often confusion between insertion loss and

    propagation loss

    Insertion loss and propagation loss

    The insertion loss of a device, is the total loss associatedwith introducing that element into a system, and includes

    the inherent loss and the coupling losses.

    Alternatively, the propagation loss is the loss associated

    with propagation in the waveguide alone i.e.

    measurement of loss coefficient, .

    There are three main experimental techniques associated

    with waveguide measurement. These are (i) the cutback

    method; (ii) the Fabry-Perot resonancemethod; and (iii)

    scattered light measurement.

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    1( ) 10log 10log

    prop prop

    L L

    out o in

    incoupling

    o

    I I e I Ce

    IdB

    I C

    = = = =

    Origin of the coupling losses

    Dimension fiber-waveguide (modal mismatch)

    Numerical Aperture

    Fresnel Reflection

    Misalignement

    Defects on the facets

    Scattering

    Insertion losses in a waveguide:

    Intrinsic

    Extrinsic

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    1 110log ( )

    prop propL L

    out o in

    incoupling

    o

    I I e I Ce

    IdB

    C I C

    = =

    = =

    Origin of the propagation losses

    Absorption

    Scattering

    Radiation

    Insertion losses in a waveguide:

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    Positioning systemFor the fiber.

    Nanopositioning system with Piezoelectric actuators

    (precision 1nm)

    For the sample

    Micropositioning system

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    The cut-back method

    The cut back method is conceptually simple. A waveguide

    of length L1 is excited by one of the coupling methods

    mentioned, and the output power from the waveguide, I1,

    and the input power to the waveguide, I0 are recorded. The

    waveguide is then shortened to another length, L2, and the

    measurement repeated to determine I2. Hence:

    i.e.

    ))LL(exp(I

    I21

    2

    1 =

    =1

    2

    21 I

    Iln

    LL

    1

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    I = I0 e-L

    L1

    Laser in

    Fotodiode

    Waveguide

    I

    LL1

    Cut-back technique

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    I

    LL1L2

    I = I0 e-L

    L2

    Laser in

    Fotodiode

    Waveguid

    e

    Cut-back technique

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    I

    LL1L2L3

    I = I0 e-L

    L3

    Laserin

    Fotodi

    ode

    Waveg

    uide

    Cut-back technique

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    I

    LL1L2L3L4

    I = I0 e-L

    L

    4

    Laser in

    Fotodio

    de

    Waveg

    uide

    ln(I)

    LL1L2L3L4

    ln (I)= ln(I0) - L

    Cut-back technique

    L=0

    ln(I)=ln(I0)=ln(Iin)+ln(C)

    MeasurableEstimaton of

    the coupling losses

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    The accuracy of the technique can be improved by taking

    multiple measurements and plotting a graph

    Optical

    Loss

    (dBs)

    Propagationlength

    (cm)

    Note that the data presented is now insertion loss for eachdevice length, not propagation loss. Hence the loss at zero

    propagation loss represents coupling loss.

    A useful variation of the cut-back method, is to carry out an

    insertion loss measurement for a single waveguide length,

    and calculate the coupling. Whilst this technique is less, it

    has the enormous advantage of being non-destructive

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    Similar technique

    Equivalent to cut-back but without the coupling lossesproblems

    Losses from a curve

    Propagation losses

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    The Fabry-Perot resonance method

    An optical waveguide with polished end faces (facets), is

    similar in structure to the cavity of a laser, and may be

    regarded as a potentially resonant cavity. Such a cavity is

    called a Fabry-Perot cavity. The optical intensity

    transmitted through such a cavity, It, is related to the

    incident light intensity, I0, by the well known equation:

    where R is the facet reflectivity, L is the waveguide

    length, is the loss coefficient, and is the phasedifference between successive waves in the cavity

    )

    2

    (sinRe4)Re1(

    e)R1(

    I

    I

    2L2L

    L2

    0

    t

    +

    =

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    This transfer function has a maximum value when =0 (or

    multiples of 2), and a minimum value when =. i.e. :

    2L

    L2

    L2L

    L2

    0

    min

    )Re1(

    e)R1(

    Re4)Re1(

    e)R1(

    I

    I

    +

    =+

    =

    2L

    L2

    0

    max

    )Re1(

    e)R1(

    I

    I

    =

    Which we can rearrange as:

    +

    = 11

    R

    1lnL

    1

    Ifweknowthereflectivity,R,ifwecanmeasure,thelosscoefficientcanbeevaluated.

    Thereforeifwecansweepthroughafewcyclesof2,canbemeasured. Suchcyclingcanbeachieved

    thermally,or

    by

    varying

    the

    wavelength

    of

    the

    light

    source.

    Therefore the ratio of the maximum intensity to minimum

    intensity, , is:

    2L

    2L

    min

    max

    )Re1(

    )Re1(

    I

    I

    +

    ==

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    0 5 10 15 20 250

    0.2

    0.4

    0.6

    0.8

    11

    0

    FP1 ( )

    FP2 ( )

    FP3 ( )

    8 0

    Plot of the Fabry-Perot transfer function for

    three different mirror reflectivities

    R=0.5

    R=0.31

    R=0.1

    It/I0

    (radians)

    IminImax

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    1550.00 1550.05 1550.10 1550.15 1550.20 1550.25

    0.25

    0.30

    0.35

    0.40

    0.45

    0.50

    0.55

    0.60

    0.65

    intensity(arb.units)

    wavelength(nm)

    FabryPerotscanofasinglemode

    waveguide

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    FabryPerotscanofamultimode

    waveguide

    1550.00 1550.05 1550.10 1550.15 1550.20 1550.25

    0.4

    0.5

    0.6

    0.7

    0.8

    0.9

    intensity(arb.units)

    wavelength(nm)

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    Scattered Light Measurement

    The measurement of scattered light from the surface of a

    waveguide can be used to determine the loss. The assumption is

    that the amount of light scattered is proportional to the

    propagating light. Therefore, the rate of decay of scattered light

    with length will mimic the rate of decay of light in the waveguide.

    However, it is clear that light is only scattered significantly if the

    loss of the waveguide is high, so this approach has limited uses.

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    Scattering light collection

    0 5 10 15 20 25 30 35

    = 0.1 0.07 dB/cm

    Si3N4 channel =780nm

    Ln

    Intensity

    [a.u.]

    Length [mm]

    The sample has to be quite lossy

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    Examplesofmicromachining: