Photodiodes • APDs • Photoreceivers • LRF Receivers...

P h o t o d i o d e s • A P D s • P h o t o r e c e i v e r s • L R F R e c e i v e r s

E l e c t r o - O p t i c a l I n s t r u m e n t s

2 0 1 5 C A T A L O G V.5

Voxtel Catalog, rev. 06, 8/2015 © Voxtel makes no warranty or representation regarding its products’ specif ic application suitability and may make changes to the products described without notice.

2

Voxtel is at the forefront of technology for high-sensitivity infrared sensing. Our products are providing our customers with improved solutions for a variety of commercial, scientific, and military sensing applications, and are providing the performance to make new applications possible.

The company was founded in 1999 with a strong focus on innovation and on bringing advanced electo-optics technologies to market, quickly and efficiently. We anticipate and translate application needs into innovative and cost-effective solutions, which we deliver to the market on time and with exceptional quality, allowing both Voxtel and our channel partners an optimal return on investment and rate of growth.

©2015 Voxtel, Inc.

Voxtel Headquarters:

15985 NW Schendel Ave. #200

Beaverton, OR 97006

LEGAL DISCLAIMER

Information in this catalog is subject to change without notice. It may contain technical inaccuracies or typographical errors.

Voxtel, Inc. may make improvements and/or changes in the products described in this information at any time, without notice.

Voxtel, Inc. reserves the right to dicontinue or change product specifications and prices without prior notice. Inadvertent errors

in advertised prices are not binding on Voxtel, Inc.

INFORMATION IN THIS CATALOG IS PROVIDED “AS IS” WITHOUT WARRANTY OF ANY KIND, EITHER EXPRESS OR IMPLIED, INCLUDING,

BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR APPLICATION,

OR NON-INFRINGEMENT.

Voxtel strives to be the industry’s first-choice solution for

electro-optical devices, subsystems, and instrumentation.


3

Contents

APD Product Guide 4

Voxtel APDs 7

Introduction 7

Product Series 7

Responsivity vs. Noise 9

Comparison Table 10

APD Product Listings 13

APD Die and Submounts 13

Packaged APDs 22

APD Photoreceivers 36

APD Receiver Support Electronics Modules 51

APD Laser Rangefinder Receivers 52

APD Laser Rangefinders 56

References 63


4

APD Product Guide

APD Die Packaged APDsPart # Description Page # Part # Description Page #

Deschutes FSI™

Bare APD die APD in hermetic TO-46 can

VFI1-DAZA 25-µm dia. 13 VFI1-DCAA 25-µm dia. 23

VFI1-JAZA 75-µm dia. 14 VFI1-JCAA 75-µm dia. 24

VFI1-NAZA 200-µm dia. 15 VFI1-NCAA 200-µm dia. 25

APD with 3-stage TEC in hermetic TO-8 can

VFI1-JKAB 75-µm dia. 26

VFI1-NKAB 200-µm dia. 27

Deschutes BSI™

APD Die on submount APD in hermetic TO-46 can

VFC1-EBZA 30-µm dia. 16 VFC1-JCAA 75-µm dia. 28

VFC1-JBZA 75-µm dia. 17 VFC1-NCAA 200-µm dia. 29

VFC1-NBZA 200-µm dia. 18 APD with 3-stage TEC in hermetic TO-8 can

VFC1-JKAB 75-µm dia. 30

VFC1-NKAB 200-µm dia. 31

Siletz™

APD Die on submount APD in hermetic TO-46 can

VFP1-EBZA 30-µm dia. 19 VFP1-JCAA 75-µm dia. 32

VFP1-JBZA 75-µm dia. 20 VFP1-NCAA 200-µm dia. 33

VFP1-NBZA 200-µm dia. 21 APD with 3-stage TEC in hermetic TO-8 can

VFP1-JKAB 75-µm dia. 34

VFP1-NKAB 200-µm dia. 35

Notes on APD Die and PackagesDeschutes BSI™ and Siletz™ APDs are backside-illuminated devices that are provided on flip-chip submounts, ready for wirebonding.

Packaged APDs are available standard with AR coating, and are optionally available with a variety of coatings and lenses, as well as fiber coupling options for the Deschutes BSI™ and Siletz™ series. We look forward to your inquiries on custom orders.


5

APD Product Guide

APD PhotoreceiversPart # Bandwidth Description Page #

Deschutes FSI™

Window-coupled Receivers in hermetic TO-8 can

RDI1-NJAF 200 MHz 200-µm dia. APD 38

RDI1-JJAF 580 MHz 75-µm dia. APD 39

Deschutes BSI™


RYC1-NJAF 200 MHz 200-µm dia. APD 40

RDC1-NJAF 300 MHz 200-µm dia. APD 41

RIC1-JJAF 2 GHz 75 µm dia. APD 43

Fiber-coupled Receivers, TO-8 package

RIC1-JJQF 2 GHz 62.5/125 µm FO, others available 44

Siletz™


RIP1-NJAF 1 GHz 200-µm dia. APD 45

RIP1-JJAF 2.1 GHz 75-µm dia. APD 46

Fiber-coupled Receivers, TO-8 package

RIP1-JJQF 2.1 GHz 62.5/125 µm FO, others available 47

Ball-lens-coupled Receivers, TO-46 package

R2P1-JCAF 1.5 GHz 300-µm dia. (effective) APD 48

Notes on PhotoreceiversA variety of custom options and optical fiber connections are available, and we continue to add standard products to our photoreceiver lines. We look forward to your inquiries on custom orders and new products.

Many customers who order our photoreceivers use our APD Receiver Support Modules for fast and easy inte-gration into their laboratory tests and product prototypes. See page 51 for more information on our support modules.


6

APD Product Guide

APD Laser Rangefinder ReceiversPart # Bandwidth Description Page #

ROX™ Rx Series


RVC1-JIAC 100 MHz LRF Receiver w/ 75-μm Deschutes BSI R-APD 54

RVC1-NIAC 100 MHz LRF Receiver w/ 200-μm Deschutes BSI R-APD 55

Notes on Laser Rangefinder (LRF) ReceiversROX™ performance allows system cost advantages by reducing laser power requirements, which also reduces system size, weight, and power.

The ROX Rx series of high-sensitivity LRF receivers (Rx) integrates Voxtel’s high-performance APDs, custom-designed CMOS application specific integrated circuits (ASICs), and processing circuits to provide flexible system integration and reliable performance, all in a small TO-8 package. We look forward to your inquiries on custom orders.

APD Laser RangefindersPart # Bandwidth Description Page #

ROX™ OEM Series


EVKE-NABC 100 µJ Eye-safe LRF device w/ 200-µm Deschutes BSI R-APD 57

ROX™ µLRF Series


FVKE-NCBC 100 µJ, 3 km Eye-safe LRF module w/ 200-μm Deschutes BSI R-APD 61


7

Voxtel APDs — Introduction to Avalanche Photodiodes

Voxtel’s avalanche photodiodes (APDs) offer superior response and linear-mode, low-light-level detection capabilities that conventional telecommunications APDs and Geiger-mode APDs can’t offer.

Customers with applications that are presently served by NIR photodiodes or low-gain telecom APDs will often prefer the Deschutes FSI™ or Deschutes BSI™ APDs and photoreceivers for their modest price and low-noise performance at gains up to M = 25. A variety of high-performance and low-light-level applications are best served by our Siletz™ line of high-gain, high-responsivity products.

Voxtel’s single-element devices are available as bare die, on submounts (for our backside-illuminated prod-ucts), in hermetic packages, and integrated into photoreceivers, with a variety of options for packaging and optical input.

Voxtel’s APD Product Series

Silicon vs Voxtel’s InGaAs APDs

Voxtel produces a number of high-performance InGaAs APDs, and each is best suited for a particular range of applications. This guide discusses the differences between Voxtel’s products and related products for NIR detection, as well as the differences among Voxtel’s product lines.

Voxtel’s APDs are replacing silicon APDs in many applications. Silicon APDs are typically used for the 300–1100 nm spectral band, while InGaAs APDs normally cover the 900–1700 nm band. Their response overlaps in the 900–1100 nm spectral region, which includes the ubiquitous 1064 nm Nd:YAG solid-state laser line that is used in many systems for range finding and target designation.

Voxtel’s InGaAs APDs are often an attractive alternative to silicon APDs in designing new systems where a fast signal rise time is required, and have served many users of silicon APDs in migrating to eye-safe systems at e.g. 1550 nm while maintaining backwards compatibility with legacy 1064 nm illuminators. However, the detector specifications can be considerably different for the two types of APDs, so depending on the application, it may not be feasible to use an InGaAs APD as a drop-in-replacement for legacy systems using a silicon APD.

Voxtel’s InGaAs APDs are often the best choice for low-light-level and/or high-bandwidth applications, though understanding the differences between our detectors is important in order to choose the right Voxtel APD for a particular application.


8

Choosing a Voxtel APD: Three product lines

Excess Noise Comparisons

Initial considerations: FSI vs. BSI spectral response and mechanical differences

Voxtel sells three InGaAs APD product lines: the Deschutes FSI™, Deschutes BSI™, and Siletz™ series. The Deschutes FSI™ series of APDs are front-side-illuminated (FSI), while the Deschutes BSI™, and Siletz™ series APDs are back-side-illuminated (BSI). The most important difference between FSI and BSI configuration is that the FSI APDs are able to absorb wavelengths below 950 nm, but for applications at 950 nm and above, the BSI APDs offer higher spectral responsivity and lower detector capacitance.

Voxtel’s BSI APDs are supplied on flip-chip ceramic submounts, ready for wire bonding. The submount increases footprint and height, but also reduces parasitic capacitance between the BSI APD’s submount bond pads relative to the bond pads situated directly on an FSI APD. Also, all of Voxtel’s fiber-coupled assemblies are designed for use with our BSI APDs.

For these reasons, our Deschutes FSI™ line is preferred by customers who require spectral response superior to silicon in the ~800–950 nm range, or who require our smallest APD.

1 10 100 1000

10

20

30

1

Gain (M)

Exce

ss N

oise

Fac

tor (F)

Competitor’s APDVoxtel Deschutes FSI™

Voxtel Deschutes BSI™

Voxtel Siletz™Voxtel Siletz UHG™

k = 0.40 k = 0.20 k = 0.02

k = 0

Measured excess noise factor vs. gain for Voxtel’s APDs and competitor’s APD (log scales), including McIntyre excess noise factor model for various impact ionization ratios k.


9

Responsivity vs noise in high-performance applications: Deschutes BSI™ vs Siletz™

The Deschutes BSI™ and Siletz™ lines are preferred for applications requiring the highest possible sensitivity for high-speed, low-light level applications that cannot be served by PIN photodiodes or Geiger APDs. These high-gain-bandwidth products address a balance of tradeoffs for engineering NIR systems in high-speed, weak-signal regimes that include cutting-edge applications in 3D imaging (including eye-safe LIDAR), long-range optical communications, and science-grade NIR detection.

The choice of a Deschutes™ or Siletz™ APD depends on the other noise sources in the planned receiver system. The Deschutes BSI™ line offers a high-quality APD with superior response relative to competing commercial InGaAs APDs, as well as performance superior to InGaAs PIN photodiodes in most conditions. Siletz™ APD products offer superior avalanche gain and low excess noise factors, with the tradeoff of higher dark current.

These products are the most effective in high-performance applications where higher system noise is unavoid-able; in these conditions, high gain is needed and the APD’s additional noise contribution is less important. Because faster systems typically require the use of noisier amplifiers, the Siletz™ APD is optimal for high-bandwidth NIR sensing.

System noise vs. transimpedance amplifier (TIA) noise and photodetector selection. Calculated noise levels and approximate TIA noise regimes in which each product type is most sensitive. Noise levels and rated low-capacitance speeds* of a few commercial TIAs are marked on the x-axis to illustrate the tradeoff between speed and amplifier noise. See also these Voxtel photoreceiver products:

*Combinations of these TIAs and Voxtel APDs may not operate at the full rated speed of the TIA, which is usually quoted for a PIN photodiode. In

particular, the higher capacitance of 200-µm APDs reduces receiver speed considerably.

Siletz™ RIP1-NJAF, 1 GHz p 45

Siletz™ RIP1-JJAF, -JJQF, 2 1 GHz pp 46, 47

Deschutes BSI™ RYC1-NJAF, 200 MHz p 40

Deschutes BSI™ RDC1-NJAF, 300 MHz p 41

Deschutes BSI™ RIC1-JJAF, -JJQF, 2 GHz pp 43, 44

TIA Noise [pA/Hz1/2]

Noi

se E

quiv

alen

t Pow

er [f

W/H

z1/2 ]

0.001 0.01 0.1 1 10

100

10

1

75-µmSiletz™Deschutes BSI™PIN

165 MHz580 MHz

1 GHz 2.7 GHz1.7 GHz

TIA Noise [pA/Hz1/2]

Noi

se E

quiv

alen

t Pow

er [f

W/H

z1/2 ]

0.001 0.01 0.1 1 10

100

10

1

200-µmDeschutes BSI™ Siletz™PIN

165 MHz580 MHz

1 GHz 2.7 GHz1.7 GHz

Voxtel’s APD Product Series


10

Voxtel’s APD Product Series — Comparison Table

Deschutes FSI™

Deschutes BSI™ Siletz™

Spectral Range, λ

Min suggested <800 nm 950 nm 950 nm

Typical range800 to

1550 nm1064 to 1550 nm 1064 to 1550 nm

Max suggested 1750 nm 1700 nm 1700 nm

Operating Gain, M

Minimum 1 1 1

Typical range 5–20 5–20 5–40

Maximum 20 20 50

Responsivity at M = 10, [A/W]

λ = 1550 nm 7.2 10.1 10.1

λ = 1064 nm 6.8 7.3 7.3

Excess Noise Factor, F(M, k)

keffective [A] ~0.2 ~0.2 ~0.02

M = 10 3.4 3.4 2.0

M = 15 4.3 4.3 2.2

M = 20 5.2 5.2 2.3

M = 50 — — 3

M = 1000 — — —

Dark Current at M = 1 of 75-µm APD, [nA] 0.56 [B] 1.9 [B] 23.4 [B]

Capacitance of 75-µm APD, [fF] 450 540 350

[A] i e , k fit to McIntyre’s excess noise model F(M, k) = k × M + (1 − k) × (2 − M−1) See p 63/Ref 1 [B] Referenced from M = 10

The following table provides typical specifications for Voxtel’s three series of APD products, to aid you in choosing the series that may best fit your needs. More information can be found on the following pages, and in the listings for individual products; see the Product Guide on pages 4 and 5.


11

Spectral Response Comparisons

Deschutes FSI™ Deschutes BSI™, Siletz™

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

800 1000 1200 1400 1600 1800

Wavelength [nm]

Resp

onsi

vity

[A/W

]

0.0

0.2

0.4

0.6

0.8

1.0

900 1100 1300 1500 1700

Wavelength [nm]

Resp

onsi

vity

[A/W

],


12

Backside-Illuminated APD Submount Layouts

APD Die and Submounts

Mechanical Information

Frontside-Illuminated APD Die Layouts

Deschutes FSI™ frontside-illuminated APDs are delivered as bare die. From left: 30-, 75-, and 200-µm APDs.

Backside-illuminated APDs are delivered on submounts. Left: Deschutes BSI™, Siletz™. Right: Siletz-UHG™) .

735 µm

860 µm

150 μm

APD

Anode

Cathode

25 μm

80 μ

m

175 μm 113 μm

350 μm

Ø 28 μm

Ø 75 μm

175

μm

350

μm

25 μ

m16

0 μm

25 μm

80 μ

m

175 μm 113 μm

350 μm

Ø 76 μm

Ø 75 μm

175

μm

350

μm

25 μ

m16

0 μm

25 μm

65 μm

65 μ

m

175 μm

350 μm

Ø 200 μm

Anode Ø 75 μm

175

μm

350

μm

25 μ

m

E EBC

1.52 mm

940 µm

Temp.Sense

150 μm

APD

100 μm

E EBC

Ano

de

Cath

ode

Cath

ode


13

Deschutes FSI™ APD Die and Submounts

Deschutes FSI™ VFI1-DAZA 25 µm, 6-GHz Avalanche Photodiode

Min Typical Max Units

Spectral Range, λ 800 1064–1550 1750 nm

Active Diameter 25 µm

Bandwidth 6 GHz

Operating Gain, M 1 15 20

Responsivity at M = 10λ = 1550 nm 7.0 7.2 8.0

A/Wλ = 1064 nm 6.0 6.8 7.7


M = 5 2.1

M = 10 3.4

M = 15 4.3

Noise Spectral Density at M = 10 0.15 pA/Hz1/2

Dark Current [A] 2.2 2.6 nA

Dark Current Dependence on Temperature [B] 0.22 dB/K

Capacitance [C] 0.23 pF

Breakdown Voltage, VBR [D] 30 37 40 V

ΔVBR/ΔT 15 17 19 mV/K

Absolute Reverse Current 3 mA

Absolute Forward Current 5 mA

Absolute Operating Temperature−200

73

0–30

273–303

52

325

°C

K

[A] M = 10, T = 298 K [B] 250 K < T < 300 K [C] M > 3 [D] T = 298 K; Idark > 0 1 mA


14

APD Die and Submounts Deschutes FSI™

Deschutes FSI™ VFI1-JAZA 75 µm, 2-GHz Avalanche Photodiode




Bandwidth 2 GHz



A/Wλ = 1064 nm 6.0 6.8 7.7


M = 5 2.1

M = 10 3.4

M = 15 4.3


Dark Current [A] 5.6 7 nA








73

0–30

273–303

52

325

°C

K



15

Deschutes FSI™ APD Die and Submounts

Deschutes FSI™ VFI1-NAZA 200 µm, 200-MHz Avalanche Photodiode




Bandwidth 200 MHz



A/Wλ = 1064 nm 6.0 6.8 7.7


M = 5 2.1

M = 10 3.4

M = 15 4.3


Dark Current [A] 6 20 24 nA








73

0–30

273–303

52

325

°C

K



16

APD Die and Submounts Deschutes BSI™

Deschutes BSI™ VFC1-EBZA 30 µm, 6-GHz Avalanche Photodiode




Bandwidth 6 GHz



A/Wλ = 1064 nm 6.6 7.3 7.8


M = 5 2.1

M = 10 3.4

M = 15 4.3


Dark Current [A] 8.0 10.8 12.5 nA


Submounted Capacitance [C] 0.28 pF



Absolute Optical Input 5 dBm




198

0–30

273–303

75

348

°C

K



17

Deschutes BSI™ APD Die and Submounts

Deschutes BSI™ VFC1-JBZA 75 µm, 2.5-GHz Avalanche Photodiode




Bandwidth 2.5 GHz



A/Wλ = 1064 nm 6.6 7.3 7.8


M = 5 2.1

M = 10 3.4

M = 15 4.3



Dark Current Dependence on Temperature 0.24 dB/K

Submounted Capacitance [C] 0.35 0.54 0.57 pF







198

0–30

273–303

75

348

°C

K



18

APD Die and Submounts Deschutes BSI™

Deschutes BSI™ VFC1-NBZA 200 µm, 550-MHz Avalanche Photodiode




Bandwidth 550 MHz



A/Wλ = 1064 nm 6.6 7.3 7.8


M = 5 2.1

M = 10 3.4

M = 15 4.3



Dark Current Dependence on Temperature 0.24 dB/K

Submounted Capacitance [C] 2.2 pF







198

0–30

273–303

75

348

°C

K



19

Siletz™ APD Die and Submounts

Siletz™ VFP1-EBZA 30 µm, 2.3-GHz Avalanche Photodiode




Bandwidth 2.3 GHz

Operating Gain, M 1 5–40 50


A/Wλ = 1064 nm 6.6 7.3 7.8


keffective [A] <0.02

M = 10 2.0

M = 20 2.3

M = 50 2.9


Dark Current at M = 1 [B] 6.6 nA

Dark Current Dependence on Temperature [C] 0.11 dB/K

Submounted Capacitance 60 fF


ΔVBR/ΔT 29 mV/K

[A] i e , k fit to McIntyre’s excess noise model F(M, k) = k × M + (1 − k) × (2 − M−1) See p 63/Ref 1 [B] Referenced from M = 10 [C] 250 K < T < 300 K [D] T = 294 K; Idark > 0 1 mA


20

APD Die and Submounts Siletz™

Siletz™ VFP1-JBZA 75 µm, 2.3-GHz Avalanche Photodiode




Bandwidth 2.3 GHz



A/Wλ = 1064 nm 6.6 7.3 7.8



M = 10 2.0

M = 20 2.3

M = 50 2.9


Dark Current at M = 1 [B] 12 23.4 40 nA


Submounted Capacitance 350 fF


ΔVBR/ΔT 29 mV/K



21

Siletz™ APD Die and Submounts

Siletz™ VFP1-NBZA 200 µm, 350-MHz Avalanche Photodiode




Bandwidth 350 MHz



A/Wλ = 1064 nm 6.6 7.3 7.8



M = 10 2.0

M = 20 2.3

M = 50 2.9


Dark Current at M = 1 [B] 90 165 195 nA


Submounted Capacitance 1.5 pF


ΔVBR/ΔT 29 mV/K



22

Packaged APDs


TO-46 Package

TO-8 Package

Pinout 1) TEC – 4) TEC + 9) Temp Sense – 10) Temp Sense + 11) APD Anode (P) 12) APD Cathode (N)

Ø 15.24

5.72

2.87

1.91

9.53

Ø 0.460.79

0.79 1 4

12 11 10 9

25.40 ± 0.64

9.91

7.16 mm

5.38

2.24 ± 0.31

APD Plane

Active area Ø 1.52

Pinout1) APD Cathode2) APD Anode3) Ground, T Sense –4) T Sense +

SIDE VIEWwith cap

TOP VIEWheader only

Ø .019Ø .016

Ø .171Ø .161

Ø .100

.700

.500

.043

.031

.045

.037

Ø .026Ø .020

.072 in183 mm

Ø .212Ø .209

Ø .048Ø .046.010

.007

.006

.000

45° ± 0.5°

.118

.114

.012

.009

.046

.042

.010 max.

1

2

3

4

Packaged APDs


23

Deschutes FSI™ Packaged APDs

Deschutes FSI™ VFI1-DCAA 25 µm APD in hermetic TO-46 can






A/Wλ = 1064 nm 6.0 6.8 7.7


M = 5 2.1

M = 10 3.4

M = 15 4.3


Dark Current [A] 2.2 2.6 nA


Total Capacitance [C] 0.52 pF

Bandwidth 6 GHz






73

0–30

273–303

52

325

°C

K



24

Packaged APDs Deschutes FSI™

Deschutes FSI™ VFI1-JCAA 75 µm APD in hermetic TO-46 can






A/Wλ = 1064 nm 6.0 6.8 7.7


M = 5 2.1

M = 10 3.4

M = 15 4.3


Dark Current [A] 5.6 7 nA



Bandwidth 2 GHz






73

0–30

273–303

52

325

°C

K



25


Deschutes FSI™ VFI1-NCAA 200 µm APD in hermetic TO-46 can






A/Wλ = 1064 nm 6.0 6.8 7.7


M = 5 2.1

M = 10 3.4

M = 15 4.3





Bandwidth 200 MHz






73

0–30

273–303

52

325

°C

K



26

Packaged APDs Deschutes FSI™

Deschutes FSI™ VFI1-JKAB 75 µm APD in hermetic TO-8 can with 3-stage TEC






A/Wλ = 1064 nm 6.0 6.8 7.7


M = 5 2.1

M = 10 3.4

M = 15 4.3

Noise Spectral Density at 200 K [A] 16 fA/Hz1/2

Dark Current [B] 5.6 7 nA


Total Capacitance [D] 1.4 pF

Bandwidth 2 GHz

Rated Package Temperature [E] 218 K

TEC Maximum Heat Transfer, Qmax [F] 0.4 W

TEC Maximum Cooling, ΔTmax 110 K

TEC Maximum Current, Imax 1.4 A

TEC Maximum Voltage, Vmax 1.9 V

Breakdown Voltage, VBR [G] 30 37 40 V





73

0–30

273–303

52

325

°C

K

[A] M = 10 [B] M = 10, T = 298 K [C] 250 K < T < 300 K [D] M > 3 [E] Guaranteed minimum; colder operation may be possible with caution [F] All TEC data @ T = 300 K [G] T = 294 K; Idark > 0 1 mA


27


Deschutes FSI™ VFI1-NKAB 200 µm APD in hermetic TO-8 can with 3-stage TEC






A/Wλ = 1064 nm 6.0 6.8 7.7


M = 5 2.1

M = 10 3.4

M = 15 4.3


Dark Current [B] 6 20 24 nA



Bandwidth 200 MHz











73

0–30

273–303

52

325

°C

K



28

Packaged APDs Deschutes BSI™

Deschutes BSI™ VFC1-JCAA 75 µm APD in hermetic TO-46 can






A/Wλ = 1064 nm 6.6 7.3 7.8


M = 5 2.1

M = 10 3.4

M = 15 4.3





Bandwidth 2.5 GHz







198

0–30

273–303

75

348

°C

K



29

Deschutes BSI™ Packaged APDs

Deschutes BSI™ VFC1-NCAA 200 µm APD in hermetic TO-46 can






A/Wλ = 1064 nm 6.6 7.3 7.8


M = 5 2.1

M = 10 3.4

M = 15 4.3





Bandwidth 550 MHz







198

0–30

273–303

75

348

°C

K



30

Packaged APDs Deschutes BSI™

Deschutes BSI™ VFC1-JKAB 75 µm APD in hermetic TO-8 can with 3-stage TEC






A/Wλ = 1064 nm 6.6 7.3 7.8


M = 5 2.1

M = 10 3.4

M = 15 4.3





Bandwidth 2.5 GHz












198

0–30

273–303

75

348

°C

K



31

Deschutes BSI™ Packaged APDs

Deschutes BSI™ VFC1-NKAB 200 µm APD in hermetic TO-8 can with 3-stage TEC






A/Wλ = 1064 nm 6.6 7.3 7.8


M = 5 2.1

M = 10 3.4

M = 15 4.3





Bandwidth 550 MHz












198

0–30

273–303

75

348

°C

K



32

Packaged APDs Siletz™

Siletz™ VFP1-JCAA 75 µm APD in hermetic TO-46 can






A/Wλ = 1064 nm 6.6 7.3 7.8



M = 10 2.0

M = 20 2.3

M = 50 2.9


Dark Current at M = 1 [B] 12 23.4 40 nA



Bandwidth 2.3 GHz

Breakdown Voltage, VBR [E] 70 74 80 V

ΔVBR/ΔT 29 mV/K

[A] i e , k fit to McIntyre’s excess noise model F(M, k) = k × M + (1 − k) × (2 − M−1) See p 63/Ref 1 [B] Referenced from M = 10 [C] 250 K < T < 300 K [D] M > 3 [E] T = 294 K; Idark > 0 1 mA


33

Siletz™ Packaged APDs

Siletz™ VFP1-NCAA 200 µm APD in hermetic TO-46 can






A/Wλ = 1064 nm 6.6 7.3 7.8



M = 10 2.0

M = 20 2.3

M = 50 2.9


Dark Current at M = 1 [B] 90 165 195 nA


Bandwidth 350 MHz


ΔVBR/ΔT 29 mV/K

[A] i e , k fit to McIntyre’s excess noise model F(M, k) = k × M + (1 − k) × (2 − M−1) See p 63/Ref 1 [B] Referenced from M = 10 [C] M > 3 [D] T = 294 K; Idark > 0 1 mA


34

Packaged APDs Siletz™

Siletz™ VFP1-JKAB 75 µm APD in hermetic TO-8 can with 3-stage TEC






A/Wλ = 1064 nm 6.6 7.3 7.8



M = 10 2.0

M = 20 2.3

M = 50 2.9

Noise Spectral Density at 200 K [B] 227 fA/Hz1/2

Dark Current at M = 1 [C] 12 23.4 40 nA


Bandwidth 2.3 GHz







ΔVBR/ΔT 29 mV/K

[A] i e , k fit to McIntyre’s excess noise model F(M, k) = k × M + (1 − k) × (2 − M−1) See p 63/Ref 1 [B] M = 10 [C] Referenced from M = 10 [D] M > 3 [E] Guaranteed minimum; colder operation may be possible with caution [F] All TEC data @ T = 300 K [G] T = 294 K; Idark > 0 1 mA


35

Siletz™ Packaged APDs

Siletz™ VFP1-NKAB 200 µm APD in hermetic TO-8 can with 3-stage TEC






A/Wλ = 1064 nm 6.6 7.3 7.8



M = 10 2.0

M = 20 2.3

M = 50 2.9

Noise Spectral Density at 200 K [B] 603 fA/Hz1/2

Dark Current at M = 1 [C] 90 165 195 nA


Bandwidth 350 MHz







ΔVBR/ΔT 29 mV/K

[A] i e , k fit to McIntyre’s excess noise model F(M, k) = k × M + (1 − k) × (2 − M−1) See p 63/Ref 1 [B] M = 10 [C] Referenced from M = 10 [D] M > 3 [E] Guaranteed minimum; colder operation may be possible with caution [F] All TEC data @ T = 300 K [G] T = 294 K; Idark > 0 1 mA


36

APD Photoreceivers

Voxtel’s line of APD photoreceivers achieve industry-leading sensitivity with bandwidth ranging from the MHz to GHz scales. These receivers are hermetically sealed in TO-8 and TO-46 packages, and integrate a Voxtel APD with a transimpedance amplifier (TIA) to provide wideband, low-noise preamplification of signal current from the APD. The APD and TIA are integrated on a ceramic submount, lowering parasitic capacitance and thereby maximizing bandwidth and minimizing noise.

The receivers integrate a calibrated temperature sensor, capacitive decoupling, separate package and cir-cuit grounding, and include differential output to allow users easy integration into their system electronics. Photoreceivers in TO-8 packages can also include thermoelectric cooling to stabilize the APD gain over the range of application environments.

Typical Voxtel Photoreceiver

Typical Block Diagram

TSense+ (B/C)

TSense– (E)

VCC +3.3V

TEC–

TEC++APD

Gnd

Gnd

N/C

Out+

Out–

N/C

TSense


37

APD Photoreceivers: Mechanical InformationTO-8 Package, Rev. C

TO-8 Package, Rev. F

Fiber Optic Package, Rev. C

Ø 15.25 mm

10.16 mm

Ø 0.45 mm

Ø 1.50 mm

1) Gnd

2) +APD

3) TEC–

4) TSense–

5) TEC+

6) TSense+

Pinout (from boom)

7) Out–

8) Gnd

9) Out+

10) VCC +3.3V

11) N/C

12) N/C

0.80 mm

5.08

mm

2.54

mm

0.80 mm

1 2 3

122.09 mm Acve area4.06 mm

0.38 mm

SIDE VIEWwith cap

BOTTOM VIEW

1 2 3

12

10.16 mm

Ø 15.25 mm

Ø 0.45 mm

Ø 1.50 mm

0.80 mm

5.08

mm

2.54

mm

0.80 mm

Ø 16.50 mm

Ø 8.00 mm

11.30 mm 7.00 mm 1000 mm

0.70 mm

6.35 mm

Ø 3.81 mm

Ø 16.50 mm

BOTTOM VIEW TOP VIEWSIDE VIEW

See also page 49.

2.39 ±0.15mm

6.65 ±0.14mm

0.38 ±0.03mm

6.35 mm

Ø 15.25 mm

10.16 mm

Ø 0.45 mm

Ø 1.50 mm

1) Gnd2) +APD3) TEC+4) TSense–5) TEC–6) TSense+

7) Out–8) Gnd9) Out+10) VCC +3.3V11) N/C12) N/C

0.80 mm

5.08

mm

2.54

mm

0.80 mm

1 2 312


38

APD Photoreceivers Deschutes FSI™

Deschutes FSI™ RDI1-NJAF 200 µm, 200-MHz Photoreceiver




Bandwidth 200 MHz

APD Operating Gain, M 1 15 20

Receiver Responsivity at M = 10

λ = 1550 nm 132kV/W

λ = 1064 nm 125


M = 5 2.1

M = 10 3.4

M = 15 4.3

Noise Equivalent Power at M = 20

λ = 1550 nm 3.1nW

λ = 1064 nm 3.3

APD Dark Current at M = 10 6 20 24 nA

Low-Frequency Cutoff [A] 30 kHz

APD Breakdown Voltage, VBR [B] 30 37 40 V


TEC Power 0.8 A @ 2.2 V

TEC Cooling, ΔTmax 43 K

TIA Power 20 mA @ 3.3 V

Thermal Load 66 mW

Output Impedance [C] 60 75 90 Ω

TIA AC Overload 2.0 mAP–P

Window Thickness 0.5–0.8 mm

Window Transparencyλ = 1550 nm 98%

λ = 1064 nm 95%

[A] −3 dB, 1 µA input [B] T = 295 K [C] Single-ended; 150 Ω differential


39

Deschutes FSI™ APD Photoreceivers

Deschutes FSI™ RDI1-JJAF 75 µm, 580-MHz Photoreceiver




Bandwidth 580 MHz



λ = 1550 nm 132kV/W

λ = 1064 nm 125


M = 5 2.1

M = 10 3.4

M = 15 4.3


λ = 1550 nm 3.1nW

λ = 1064 nm 3.3

APD Dark Current at M = 10 5.6 7 nA







Thermal Load 66 mW

Output Impedance [D] 60 75 90 Ω




λ = 1064 nm 95%

[A] −3 dB, 1 µA input [B] T = 295 K [C] Single-ended; 150 Ω differential


40

APD Photoreceivers Deschutes BSI™

Deschutes BSI™ RYC1-NJAF 200 µm, 200-MHz Photoreceiver




Bandwidth 200 MHz



λ = 1550 nm 372kV/W

λ = 1064 nm 228


M = 5 2.1

M = 10 3.4

M = 15 4.3


λ = 1550 nm 1.8nW

λ = 1064 nm 2.3








Thermal Load 66 mW





λ = 1064 nm 95%

Temperature Sensor Sensitivity 2.18 mV/K

[A] −3 dB, 1 µA input [C] at T = 298 K [B] T = 295 K [D] Single-ended; 150 Ω differential

See also page 42.


41

Deschutes BSI™ APD Photoreceivers

Deschutes BSI™ RDC1-NJAF 200 µm, 300-MHz Photoreceiver




Bandwidth 300 MHz



λ = 1550 nm 372kV/W

λ = 1064 nm 228


M = 5 2.1

M = 10 3.4

M = 15 4.3


λ = 1550 nm 3.2nW

λ = 1064 nm 4.1








Thermal Load 66 mW





λ = 1064 nm 95%

Temperature Sensor Sensitivity 2.18 mV/K

[A] −3 dB, 1 µA input [C] at T = 298 K [B] T = 295 K [D] Single-ended; 150 Ω differential


42


Deschutes BSI™ RYC1-NJAF

Deschutes BSI™ RDC1-NJAF

250

200

150

100

50

0

0.1 0.30.2 0.5 1 32

Signal Power [µW]

Resp

onsi

vity

[kV/

W] Avg.

95%90%

Avg.95%90%M=10

M=20

Linearity of Response

Linearity of response in the RYC1-NJAF receiver; applies also to RDC1-NJAF. 20-MHz modulated signal, 1064 nm.

20 25 30 35 40 45 50

100

10

1

Light + Dark Current

Dark Current

Avalanche Gain

Reverse Bias [V]

Out

put C

urre

nt [A

]

Gai

n

10–5

10–6

10–7

10–8

10–9

10–10

278 K293 K

Output and Gain: RDC1-NJAC 300-MHz

Output current and gain vs. bias for cooled and uncooled photoreceivers at ~100 nW light power.


43

Deschutes BSI™ APD Photoreceivers

Deschutes BSI™ RIC1-JJAF 75 µm, 2-GHz Photoreceiver




Bandwidth 2 GHz



λ = 1550 nm 66kV/W

λ = 1064 nm 41


M = 5 2.1

M = 10 3.4

M = 15 4.3


λ = 1550 nm 13.6nW

λ = 1064 nm 18.8







Thermal Load 83 mW

Output Impedance [C] 42.5 50 57.5 Ω

Data Output Swing 220 300 500 mVP–P




λ = 1064 nm 95%

[A] −3 dB, 40 µA input [C] Single-ended; 100 Ω differential [B] T = 295 K


44


Deschutes BSI™ RIC1-JJQF 75 µm, 2-GHz Photoreceiver



MM Fiber-Optic Connection Multimode 62.5/125, FC connector [A] µm

Bandwidth 2 GHz



λ = 1550 nm 66kV/W

λ = 1064 nm 41


M = 5 2.1

M = 10 3.4

M = 15 4.3


λ = 1550 nm 13.6nW

λ = 1064 nm 18.8


Low-Frequency Cutoff [B] 65 kHz

APD Breakdown Voltage, VBR [C] 45 50 55 V




Thermal Load 83 mW

Output Impedance [D] 42.5 50 57.5 Ω





λ = 1064 nm 95%

[A] Other sizes/connectors available [B] −3 dB, 40 µA input [C] T = 295 K [D] Single-ended; 100 Ω differential


45

Siletz™ APD Photoreceivers




Bandwidth 1 GHz

APD Operating Gain, M 1 5–40 50


λ = 1550 nm 133kV/W

λ = 1064 nm 96



M = 10 2.0

M = 20 2.3

M = 50 2.9


λ = 1550 nm 12.1nW

λ = 1064 nm 15.4

APD Dark Current at M = 1 [B] 90 165 195 nA

Low-Frequency Cutoff [C] 65 kHz

APD Breakdown Voltage, VBR [D] 70 74 80 V

ΔVBR/ΔT 29 mV/K



Thermal Load 83 mW

Output Impedance [E] 42.5 50 57.5 Ω





λ = 1064 nm 95%

[A] i e , k fit to McIntyre’s excess noise model F(M, k) = k × M + (1 − k) × (2 − M−1) See p 63/Ref 1 [B] Referenced from M = 10 [D] T = 294 K [C] −3 dB, 1 µA input [E] Single-ended; 100 Ω differential

Siletz™ RIP1-NJAF 200 µm, 1-GHz Photoreceiver


46

APD Photoreceivers Siletz™




Bandwidth 2.1 GHz



λ = 1550 nm 133kV/W

λ = 1064 nm 96



M = 10 2.0

M = 20 2.3

M = 50 2.9


λ = 1550 nm 8.2nW

λ = 1064 nm 10.5

APD Dark Current at M = 1 [B] 12 23.4 40 nA



ΔVBR/ΔT 29 mV/K



Thermal Load 83 mW

Output Impedance [E] 42.5 50 57.5 Ω





λ = 1064 nm 95%

[A] i e , k fit to McIntyre’s excess noise model F(M, k) = k × M + (1 − k) × (2 − M−1) See p 63/Ref 1 [B] Referenced from M = 10 [D] T = 294 K [C] −3 dB, 1 µA input [E] Single-ended; 100 Ω differential

Siletz™ RIP1-JJAF 75 µm, 2.1-GHz Photoreceiver


47


Siletz™ RIP1-JJQF 2.1-GHz Fiber-Coupled Photoreceiver



MM Fiber-Optic Connection Multimode 62.5/125, FC connector [A] µm

Bandwidth 2.1 GHz



λ = 1550 nm 133kV/W

λ = 1064 nm 96


keffective [B] <0.02

M = 10 2.0

M = 20 2.3

M = 50 2.9


λ = 1550 nm 8.2nW

λ = 1064 nm 10.5

APD Dark Current at M = 1 [C] 12 23.4 40 nA

Low-Frequency Cutoff [D] 65 kHz

APD Breakdown Voltage, VBR [E] 70 74 80 V

ΔVBR/ΔT 29 mV/K



Thermal Load 83 mW

Output Impedance [F] 42.5 50 57.5 Ω



[A] Other sizes/connectors available [B] i e , k fit to McIntyre’s excess noise model F(M, k) = k × M + (1 − k) × (2 − M−1) See p 63/Ref 1 [C] Referenced from M = 10 [D] −3 dB, 1 µA input [E] T = 294 K [F] Single-ended; 100 Ω differential

See also page 50.


48




Active DiameterActual 75

µmEffective 300

Bandwidth 1.5 GHz



λ = 1550 nm 311kV/W

λ = 1064 nm 225



M = 10 2.0

M = 20 2.3

M = 50 2.9


λ = 1550 nm 11.0nW

λ = 1064 nm 14.1


λ = 1550 nm 12.5nW

λ = 1064 nm 15.8

APD Dark Current at M = 1 [B] 12 23.4 40 nA



ΔVBR/ΔT 29 mV/K

TIA Power 20 mA @ 3.3 V 24 mA @ 4.5 V

Thermal Load 66 108 mW

Output Impedance [E] 50 Ω

Data Output Swing 140 270 mVP–P

TIA AC Overload [F] 8 mAP–P

Lens Transparencyλ = 1550 nm 98%

λ = 1064 nm 95%

[A] i e , k fit to McIntyre’s excess noise model F(M, k) = k × M + (1 − k) × (2 − M−1) See p 63/Ref 1 [B] Referenced from M = 10 [E] Single-ended; 100 Ω differential [C] −3 dB, 1 µA input [F] At RTIA input [D] T = 294 K

Siletz™ R2P1-JCAF 75 µm, 1.5-GHz Ball-Lens-Coupled Photoreceiver


49


Siletz™ R2P1-JCAF


Impulse Response Spatial Response with Ball Lens

Pinout1) DOUT2) VDD3) V+ APD4) DOUT B5) GND

111

Ø 5.31

1.4

Ø 4.22 mm

±0.038

5

123

4

57°57°

82° 82°

Ø 2.54

2.55

4.705.38

BOTTOM VIEW SIDE VIEWwith cap

TOP VIEWheader only

0 5 10 15 20 25

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0

−0.1

Time [ns]

Resp

onse

[V]

−400 −300 −200 −100 0 100 200 300 400

1

0.8

0.6

0.4

0.2

0

Position [µm]

Nor

mal

ized

Res

pons

e


50


2.488 Gb/s

622 Mb/s

156 Mb/s

2.125 Gb/s

Bit Rate

–50 –45 –40 –35

10–1

10–2

10–3

10–4

10–5

10–6

10–7

10–8

10–9

10–10

10–11

10–12

Bit

Err

or R

ate

Optical Power [dBm]

Siletz™ RIP1-JJAF

Siletz™ RIP1-JJQF

Bit Error Rate

Bit error rate (BER) vs. input optical power for the RIP1-JJAF receiver; applies also to RIP1-JJQF. 20-MHz modulated signal, 1064 nm.


51

APD Receiver Support Electronics ModulesVoxtel’s Receiver Support Electronics Modules provide an easy way to operate our TO-8–packaged receivers without having to design and build custom optics. They can be used as optical receiver modules (ORMs) for system prototyping, or for incoming inspection, test, and characterization of APD receivers.

These modules include a 5 V AC–DC converter to provide power and grounding, and a grounding plug for additional optional grounding. The bias supplied to the receiver can be monitored through a BNC connection on the back plate, and is adjustable if necessary using a potentiometer. When the module is ordered together with a receiver, the module will be shipped with the supply voltage adjusted optimally for that receiver.

VCC +3.3 or +5V

TEC –

TEC +

APD-TIA Receiver (TO-8)

APD Receiver Support Module

RTIA Bias

APD Bias

APD Bias Monitor

APD Bias Control

5V, 3A in; GND

Out 1

GND

Out 2

TEC ControlTSense+

TSense–

+APD

Gnd

Gnd

N/C

Out+

Out–

N/C

TSense

4x Ø .089 Thru All4–40 UNC –2B Thru All

User-available holes 2x Ø .281 Thru All

2.08

9

.750 0

.750

2.08

9

1.166

1.181

4x Rubber Feet

1.1051.041

0

1.105

0 .380

.468

3.45

0

4.22

2

5.0005.500

0

.474

1.522

2.147

2.772

3.4603.847

Support Module: Functional Diagram

Support Module: Mechanical Information


52

APD Laser Rangefinder (LRF) ReceiversThe ROX Rx series of LRF receivers integrates Voxtel’s Deschutes VFC1 Series of InGaAs APD. The Deschutes APDs are sensitive over the 950 nm to 1700 nm spectral range and have stable avalanche gain up to M=25. To avoid the power draw, cost, and complexity of a thermoelectric cooler (TEC), the ROX Rx series of receivers uses a temperature-dependent bias compensation scheme where gain is slightly reduced at high temperatures to mitigate the deleterious effects of APD dark current, and gain is allowed to increase at low temperatures.

The Voxtel ROX ASIC performs signal amplification, conditioning, pulse detection, pulse generation and dif-ferential output. A user-supplied VCMOS1 bias (+1.8 VDC) powers the ASIC. The ROX ASIC includes a two-stage resistive transimpedance amplifier (TIA) with a 100 MHz bandwidth. The ASIC is designed to convert the cur-rent output of the APD into an amplified voltage signal that can be detected by the pulse detection circuits.

Typical LRF Receiver

Functional Diagram: APD LRF ReceiversThe ROX Rx series of LRF receivers includes six primary components: (1) Voxtel’s Deschutes™ NIR APD, (2) a custom-designed ROX™ amplification and pulse processing ASIC, (3) a bias supply and conditioning circuit, (4) a microcontroller and (5) an EEPROM; all are mounted on a circuit board integrated in (6) a hermetic TO-8 package.

Block Diagram


53

Mechanical Information: APD LRF ReceiversThe ROX Rx series of receiver cap consists of a fused silica flat window (Schott D273T) with a wideband NIR anti-reflection coating on both sides. Inside the package, the APD is mounted directly onto the ASIC, minimiz-ing capacitance and improving reliability. The TO-8 package has 12-pins, which include: six user-required inputs, a differential signal output pair, two optional LRFR monitor points (bias and buffered signal), and two pins for factory calibration and servicing.

TO-8 Package


54

ROX™ Rx Series LRF Receivers Deschutes BSI™

RVC1-JIAC 100 MHz ROX Rx Series Receiver w/ 75-μm Deschutes BSI™ R-APD

in a TO-8 Package

Parameter Min Typical Max Units

Spectral Response, λ 950 1535 1700 nm

Optically Active Diameter 75 μm

Bandwidth 100 MHz

Low Frequency Cutoff 100 300 kHz

APD Operating Gain, M 1 5 - 20 25

Pulse Pair Resolution 70 100 ns

Linear Dynamic Range 25 dB

Total Dynamic Range 70 dB

Comparator Threshold Level (VCOMP) 0 0.48 - 0.78 1.8 V

Optional Comparator Decay Time (VHI to VCOMP)

3 μs

Operational Performance

Small Signal Responsivity1 890 89001 71200 kV/W

Temporal Resolution1,2,3,4 206 ps RMS

Noise Equivalent Power1,2,4 0.2 0.3 0.5 nW

Signal Sensitivity1,4,5 0.8 1.2 2.0 nW

Maximum Instantaneous Optical Power4 6 MW/cm2

Power Requirements

Low Voltage Current Draw Threshold Level

1.8 V APD supply 20 mA

5 V APD supply 10 mA

High Voltage Current Draw Threshold Level < 63 V APD supply 5 mA

Environmental

Operational Temperature Range -40 80 °C

1 Assumes 2-ns pulse width

2 M =10 gain

3 20-nW signal

4 1535-nm spectral response

5 0.1% false alarm rate


55

Deschutes BSI™ ROX™ Rx Series LRF Receivers

RVC1-NIAC 100 MHz ROX Rx Series Receiver w/ 200-μm Deschutes BSI™ R-APD

in a TO-8 Package

Parameter Min Typical Max Units

Spectral Response, λ 950 1535 1700 nm

Optically Active Diameter 200 μm

Bandwidth 100 MHz

Low Frequency Cutoff 100 300 kHz


Pulse Pair Resolution 70 100 ns

Linear Dynamic Range 25 dB

Total Dynamic Range 70 dB

Comparator Threshold Level (VCOMP) 0 0.48 - 0.78 1.8 V

Optional Comparator Decay Time (VHI to VCOMP)

3 μs

1 2-ns pulse width

2 M =10 gain

3 20-nW signal

4 1535-nm spectral response

5 0.1% false alarm rate

Operational Performance

Small Signal Responsivity1 890 89001 71200 kV/W

Temporal Resolution1,2,3,4 206 ps RMS

Noise Equivalent Power1,2,4 0.3 0.5 1.0 nW

Signal Sensitivity1,4,5 1.2 2.0 4.0 nW

Maximum Instantaneous Optical Power4 6 MW/cm2

Power Requirements

Low Voltage Current Draw Threshold Level

1.8 V APD supply 20 mA

5 V APD supply 10 mA

High Voltage current Draw Threshold Level

< 63 V APD supply

5 mA

Environmental

Operational Temperature Range -40 80 °C


56

APD Laser Rangefinders (LRFs)Voxtel’s Deschutes VFC1 Series of InGaAs APDs enable low-power high-performance ranging in our eye-safe micro-miniature laser rangefinders (µLRFs), including:

• ROX OEM Series: A compact eye-safe uLRF module for original equipment manufacturers.

• ROX uLRF Series: A compact eye-safe uLRF delivering the highest performance in its class

.


57

Deschutes BSI™ ROX™ OEM Series LRF Modules

• Survey and 3D Building Rendering

• Mapping & Altimetry

• Sports & Recreation

• Police & Paramilitary

Applications

ROX™ OEM Series−Compact, High Performance uLRF Modules for OEMs

Safely enabling acquisition of the most detailed, timely, and ac-curate data—at the lowest size, weight, power and cost

The compact ROX OEM series μLRF module is a low-cost easy-to-integrate, easy-to-operate micro-laser rangefinder (μLRF) module custom-designed for original equipment manufacturers (OEMs) of compact ranging systems for commercial, industrial and military applications.

• Eye-safe Laser: Many ranging devices use near-infrared lasers or LEDs that are not eye-safe at the power levels required to generate sufficient return pulses from long-range targets, under all weather conditions. Our custom-developed compact monolithic, passively Q-switched, eye-safe 1535-nm laser—with 100-µJ 2-ns FWHM laser pulses of near diffraction-limited beam quality at 40 kW of peak power—allows the ROX OEM series µLRF, with a 25-mm optic, to image up to 7.5 km in single-pulse mode and over 10 km when multiple pulses accumulate. A diffraction-limited laser beam with the highest power in its weight-price class, provides class-leading range and accuracy.

• Industry-leading Performance with Reduced Size, Weight, Power and Cost: Measuring precisely at long range previously required inefficient laser sources with large collection optics, resulting in large, heavy ranging systems—too large for most consumer and size-sensitive commercial applications. By tightly coupling our proprietary laser and high-performance APD photoreceiver with our control and processing electronics, Voxtel makes possible a new class of ultra-miniature rangefinders that can be embedded in a wide variety of products. With the Class-1M laser and low-noise APD photoreceiver, tightly integrated with programmable functionality, the μLRF achieves noise equivalent power (NEP) of 0.5 nW, with linear dynamic range of 25 dB and total dynamic range of 70 db, while maintaining excellent damage threshold levels of 6 MW/cm2. The compact cost-effective design—which eliminates the need for power-hungry thermoelectric coolers—allows for smaller, more affordable active systems.

• Flexible Operation: The photoreceiver has programmable modes to stabilize gain over a wide temperature range, to optimize ranging performance over the full temperature range, and to implement other user-programmable or factory-configured functions. Range-programmable threshold and gain features allow maintained sensitivity over a large range and optimized false alarm rates (FARs) for a wide variety of operating scenarios.

• Eye-safe: Class-1M, 1535-nm laser transmitter

• Unsurpassed Sensitivity: < 0.5 nW NEP

• Long Range: 7.5 km single-shot with 25-mm receive optics

• Simple: Serial interface with programmable control over threshold and gain

• High Precision: 150-mm accuracy single-shot variance

• High Beam Quality: Diffraction-limited beam, M2 < 1.2

• Excellent Repetition Rate: Up to 10-Hz single-shot repetition rate

• Low Power Consumption: 800 mW while ranging

• Long Lifetime: > 100 million shots

• Robust: Qualified to guns and other extreme environments

• Lightweight: 32 grams

• Option: Up to 1-mm hemispheric lens on APD

Features


58

ROX™ OEM Series LRF Modules Deschutes BSI™

Min Typical Max Conditions

Transmitter

Wavelength 1535 nm

Pulse Energy 85 μJ 100 μJ 150 μJ

Pulse Width 2 ns FWHM

Peak Power 40 kW

Pulse Repetition Frequency 1 Hz 10 Hz

Beam Diameter 0.7 mm

Beam Divergence 4.2 mrad

Beam Quality (M2) 1 1.1 1.2

Receiver

Diameter 200 µm

Noise Equivalent Power 500 pW

Ranging Performance

Timing Resolution 60 ps

Range Precision 150 mm single pulseRange Distance 10 m 10 m - 7.5 km 25-mm receive optics, clear

conditions, single pulse, FAR = 60 Hz (0.1%)

Electrical

Power Consumption 800 mW 1.7 W 10-Hz repetition rate

Mechanical

Weight 32 g

Environmental

Operating Temperature -40oC to +60oC

Shock 1500 g, 0.5 ms

Vibration 20 – 2000 Hz, 20 g

Lifetime > 100 million shots mean time to failure (MTTF)

Specifications: Model EVKI-NABC

Class I Invisible Laser Radiaon Present

Avoid long-term viewing of laser.

CAUTION


59

Deschutes BSI™ ROX™ OEM Series LRF Modules

37.1

48.3

Component Dimensions: Model EVKI-NABCR e c e i v e r

S y s t e m B o a r d

T r a n s m i t t e r

27.6

8.6(radius)

[0.3

94

]1

0

[1.080]

27.4

[0.536]13.613

[0.5

74

]1

4.5

75

[0.144]3.660

mounting screws 2X 2mm SHCS

[0.3

15

]8

[0

.21

1]

5.3

50

beam exit

[0.3

54

]9

[0.1

97

]5

[0.0

00

]0

[0.1

97

]5

[0.3

54

]9

[0.1

58

]4

.02

0

[mm]

inches

[mm]

inches

[mm]

inches


60

ROX™ OEM Series LRF Modules Deschutes BSI™



CAUTION

Electrical Specifications: Model EVKI-NABC

Connector Pin Description

J9 5, 9, 11, 13, 15, 17, 19, 21, 23, 25 DC Ground

J9 10, 12 1.8 V DC

J9 18, 20 3.3 V DC

J9 22, 24, 26 5 V DC

J12 3 Transmit

J12 5 Receive

J12 9 DC Ground


61

Deschutes BSI™ ROX™ µLRF Series

• Hunting and Sporting

• Survey

• Mapping and Altimetry

• Robotics and Autonomous Navigation

• UAV-Mounted Ranging and Surveillance

• Police and Paramilitary Surveillance

Applications

ROX™ µLRF Series−Eye-Safe Micro-Laser Range-finders

• Eye-safe: Class-1M, 1535-nm laser transmitter

• Long Range: 3 km

• Hih Precision: 100-mm accuracy single-shot variance

• High Beam Quality: Diffraction-limited beam, M2 < 1.2

• Unsurpassed Sensitivity: < 0.5 nW NEP

• High Repetition Rate: Up to 10-Hz single-shot

• Long-life Battery: > 200 thousand shots with rechargeable LIPO

• Long Lifetime: > 100 million shots

• Robust: Qualified to IP65

Features

Delivering the highest performance in its class

The ROX µLRF series of micro-laser rangefinder (µLRF) is a new class of high-performance, eye-safe laser rangefinder in an extremely compact, lightweight package.

Designed for use by high-performance consumer, commercial and industrial system integrators, the ROX µLRF, combines low-divergence diffraction-limited laser pulses with Voxtel’s state-of-the-art APD receiver to achieve the most sensitive, highest performing rangefinder in its size and weight class.

The ROX µLRF includes:

• ROX Rx, a highly sensitive InGaAs APD receiver (Rx).

• ROX Tx, a small-form-factor eye-safe diode-pumped solid-state laser transmitter (Tx) operating at 1535 nm, with a beam expander that provides 0.5 mrad of laser divergence with near diffraction-limited beam quality.

• Visible boresight aiming laser operating at 650 nm.

• Custom pulse-processing and time-to-digital circuits.

• Micro-USB serial interface compatible with bluetooth converters.

The waterproof ROX µLRF series delivers reliable ranging of targets under direct sunlight, at night and in low visibility conditions, including fog, rain and snow. Communication is performed over the bluetooth-compatible micro-USB connector. The ROX µLRF series comes factory-configued with a variety of operating modes and is easily user-programmed. It is designed for flexible integration with user systems.


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ROX™ Rx Series LRF Receivers ROX™ µLRF Series

General

Eye Safety Class 1M

Measurement Range1 3 km

Minimum Range 10 m

Range Accuracy 100 mm

Range Resolution 50 mm

Multiple Target Detection 5 returns per shot with 10-m separation

Measurement Rate 10 Hz

LRF Transmitter

Laser Type DPSS

Operating Wavelength 1535 nm

Beam Divergence 0.5 mrad

Transmitter Optic Diameter 12 mm

Pulse Energy 100 µJ

Pulse Width (FWHM) 2 ns

Laser Classification 1M (EN 60825-1: 2007)

Lifetime > 100 million shots

LRF Ceceiver

Detector Type InGaAs APD

Receiver Optic Diameter 15 mm1 2.3-m x 2.3-m target, albedo 0.3, visibility 10 km

Boresight Aiming Laser

Operating Wavelength 650 nm

Power 5 mW

Eye Safety Class IIIa

Range: Day / Night 30 m / 450 m

Electrical

Data Interface

• RS232 3.3 V TTL Level

• Bluetooth v21.1 (optional)

Power Supply 3.3 V to 12 V (LIPO)

Power Consumption

• Standby 80 mW

• Max Mea- sure Rate 1.7 W

Mechanical

Weight 145 g

Dimensions (LxWxH, mm) 75 x 50 x 20

Environmental

Operating Temperature -40 to 60 oC

Storage Temperature -45 to 80 oC

Waterproof IP65

Specifications: Model FVKE-NCBC

Dimensions:



CAUTION


63

[1] R. J. McIntyre, “Multiplication Noise in Uniform Avalanche Diodes,” IEEE Transactions on Electron Devices 13(1), 164–168 (1966).

[A] G. M. Williams, “GHz-Rate Single-Photon-Sensitive Linear-Mode APD Receivers,” Proceedings of SPIE 7222, 72221L (2009).

[B] G. M. Williams, M. A. Compton, and A. S. Huntington, “High-Speed Photon Counting with Linear-Mode APD Receivers,” Proceedings of SPIE 7320, 732012 (2009).

References

Single-Photon Counting: Voxtel Publications

References

©Voxtel, Inc 2015

Voxtel, Inc.

15985 NW Schendel Ave., #200

Beaverton, OR 97006

www.voxtel-inc.com

T: (971) 223-5646 F: (503) 296-2862

http://www.voxtel-inc.com

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