Photo-resist Stripper - taimax.com.t Stripper_Taimax_2016.pdf · Photo-resist Stripper Evan Chen...
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Transcript of Photo-resist Stripper - taimax.com.t Stripper_Taimax_2016.pdf · Photo-resist Stripper Evan Chen...
![Page 1: Photo-resist Stripper - taimax.com.t Stripper_Taimax_2016.pdf · Photo-resist Stripper Evan Chen TAIWAX MAXWAVE Co., Ltd, No. 999, Bayiu 1st Rd., Guanyin Township, Taoyuan County](https://reader037.fdocuments.in/reader037/viewer/2022102704/5a7a500b7f8b9a27638c3bef/html5/thumbnails/1.jpg)
Photo-resist Stripper
Evan Chen
TAIWAX MAXWAVE Co., Ltd, No. 999, Bayiu 1st Rd., Guanyin Township, Taoyuan County Taiwan
2016
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Outline
Introduction
• The Characteristic of Negative and Positive Photoresists
• Resist Types
Taimax’s Products
• Cross Reference List
• Benefit and Material Compatibility
• Performance
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Mask/reticle
Exposure
After Development
Negative Photoresist
UV light
Positive Photoresist
Substrate
Substrate
Substrate
Photoresist
Substrate
Photoresist
The Characteristic of Negative and Positive Photoresists
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The Characteristic of Negative and Positive Photoresists
Characteristic Positive Negative
Component
• Poly(methyl glutarimide) (PMGI) • Phenol formaldehyde resin (DNQ/Novolac) • SU-8 • Indene-Carboxylic-Acid (ICA)
Hydrophilic • Benzoin/Acrylic (PMMA) • Triazine/Novolac (3D X-link) • Thick film/copolymer with
polystyrene (PS) Hydrophobic • Rubber: Azide/Isoprene (X-
chain link)
Adhesion to Silicon Fair Excellent
Relative Cost More Expensive Less Expensive
Category
• Inorganic solvents: KOH based, NaOH based and etc • organic solvents: TMAH based, NMP based, DMSO based and etc
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Resist Types
Targets: g-line(436nm for 0.5um technology)
i-line(365nm for 0.3um)
deep UV (248nm & 193nm for 0.25 & 0.18um)
Positive (hydrophilic) DNQ/Novolak(phenol-formaldehyde)
Negative Hydrophilic
• Benzoin/Acrylic (PMMA) (also dry-film)
• Triazine/Novolak (3D X-link)
• Thick Film – Copolymer with polystyrene (PS)
– 50-100 um thickness
– For solder bumping, metal lift-off, MEMS
Hydrophobic • Rubber: Azide/Isoprene (X-chain link)
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Cross Reference List
Taimax’s product Photo-resist (PR) Note
PRS-991 LD-300D1 NMP based
PRS-219 Lift off -ENPI 202, ENPI 205 Aromatic Solvent + Alkyl Sulfonic Acid
PRS-809 Lift off -N-Nof(AZ), EPG-516 (P) NMP based
PRS-239 AZ-4620, TOK-HA 1300 Alkyl alcohol based High selectivity to Sn, Ag, Al, Cu and PI film
PRS-615 DNR-L300D1 (N) NMP based High selectivity to Ag, Al and Cu
PRS-240 AsahiCXA240, AsahiCX-A270, TOK50240, 50120, PW1000
Alkyl alcohol based High selectivity to Sn, Ag, Al, Cu and PI film
PRS-701 CR-4000, AZ-4620 DMSO-based
PRS-816 Eagle 2007 Lactic acid based
PRS-777 TOK-31 NMP based High selectivity to AlCu, Al and Cu
PRS-278 NP7-6000P, ENPI-202 and EP3200
DMSO-based High selectivity to GaAs, Al, ITO and Ti
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• A single-dose
• Short processing times: 20-60 minutes
• Low etching rates on many sensitive metals such as Al, Ti, Ni, Au, Sn, Ag and TiW
• Suitable for use in immersion, batch spray, and single wafer tools
• Long bath life
• 316LEP Stainless Steel
• Quartz
• Propylene (P.P.)
Material Compatibility
Benefit
• Polytetrafluoroethyene (PTFE)
• Polyvinylidene fluoride (PVDF)
• High-density polyethylene (HDPE)
Benefit and Material Compatibility
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Stripping Capability for Dry Film in Bumping Process
After stripping by PRS-240 (Dry film: AsahiCX-A270)
After a comprehensive identification by scanning electron microscope (SEM), the dry film is completely removed by the PRS-240.
Test condition is for 40 min at 70 ℃.
50X
1200X
50X
1200X
50X
1200X
50X
1200X
50X
1200X
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Stripping Capability for Wet Film in Bumping Process
After stripping by PRS-239 (PR film: TOK HA-1300)
After a comprehensive identification by scanning electron microscope (SEM), the wet film is completely removed by the PRS-239.
Test condition is for 40 min at 60 ℃.
50X
1200X
50X
1200X
50X
1200X
50X
1200X
50X
1200X
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Test condition is for 30 min at 60 ℃.
Stripping Capability for Wet Film in Bumping Process
After stripping by PRS-701 (PR film: CR-4000)
After a comprehensive identification by scanning electron microscope (SEM), the wet film is completely removed by the PRS-701.
250X
250X 3500X
3500X
Fig. 1. 50 wafers
Fig. 3. 1200 wafers
250X 3500X
Fig. 2. 500 wafers
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Test condition is for 20 min at 55 ℃.
Stripping Capability for Wet Film in Semiconductor Industry
After stripping by PRS-777 (PR film: TOK-31)
15000X 15000X 15000X 15000X
15000X 15000X
Fig. 2. 50 wafers Fig. 3. 100 wafers Fig. 4. 300 wafers
Fig. 5. 500 wafers Fig. 6. 800 wafers
Fig. 1. FE-SEM photograph of after PR stripping
Fig. 7. 1000 wafers
15000X
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Stripping Capability for Wet Film in LED Industry
Fig. 2 FE-SEM photographs of after PR stripping (Test condition is for 15min +15min at 85 ℃)
PR stripping by PRS-615 (PR film: TOK-31)
Fig. 1. Fig. 2 FE-SEM photographs of before PR stripping
350X 1000X 2000X
350X 1000X 2000X
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If don’t see what you are looking for, Taimax can
custom-formulate something to meet your specific requirements.
Thank you.
TAIWAX MAXWAVE Co., Ltd, No. 999, Bayiu 1st Rd., Guanyin Township, Taoyuan County Taiwan 2016