Photo Modules for PCM Remote Control Systemsfile.yizimg.com/335784/2012102514173897.pdfTSOP12..TB1...

9
TSOP12..TB1 Vishay Telefunken 1 (9) Rev. 9, 30-Mar-01 www.vishay.com Document Number 82020 Photo Modules for PCM Remote Control Systems Available types for different carrier frequencies Type fo Type fo TSOP1230TB1 30 kHz TSOP1233TB1 33 kHz TSOP1236TB1 36 kHz TSOP1237TB1 36.7 kHz TSOP1238TB1 38 kHz TSOP1240TB1 40 kHz TSOP1256TB1 56 kHz Description The TSOP12..TB1 – series are miniaturized receivers for infrared remote control systems. PIN diode and preamplifier are assembled on lead frame, the epoxy package is designed as IR filter. The demodulated output signal can directly be decoded by a microprocessor. The main benefit is the reliable function even in disturbed ambient and the protection against uncontrolled output pulses. 94 8692 GND V S OUT Features Photo detector and preamplifier in one package Internal filter for PCM frequency Improved shielding against electrical field disturbance TTL and CMOS compatibility Output active low Low power consumption Suitable burst length 10 cycles/burst Special Features Enhanced immunity against all kinds of disturbance light No occurrence of disturbance pulses at the output Block Diagram 94 8136 PIN Input AGC Control Circuit Band Pass Demodu- lator 100 k 1 2 3 V S OUT GND

Transcript of Photo Modules for PCM Remote Control Systemsfile.yizimg.com/335784/2012102514173897.pdfTSOP12..TB1...

Page 1: Photo Modules for PCM Remote Control Systemsfile.yizimg.com/335784/2012102514173897.pdfTSOP12..TB1 Vishay Telefunken Rev. 9, 30-Mar-01 1 (9) Document Number 82020 Photo Modules for

TSOP12..TB1Vishay Telefunken

1 (9)Rev. 9, 30-Mar-01www.vishay.comDocument Number 82020

Photo Modules for PCM Remote Control Systems

Available types for different carrier frequencies Type fo Type fo

TSOP1230TB1 30 kHz TSOP1233TB1 33 kHz

TSOP1236TB1 36 kHz TSOP1237TB1 36.7 kHz

TSOP1238TB1 38 kHz TSOP1240TB1 40 kHz

TSOP1256TB1 56 kHz

DescriptionThe TSOP12..TB1 – series are miniaturized receiversfor infrared remote control systems. PIN diode andpreamplifier are assembled on lead frame, the epoxypackage is designed as IR filter. The demodulated output signal can directly bedecoded by a microprocessor. The main benefit is thereliable function even in disturbed ambient and theprotection against uncontrolled output pulses.

94 8692GND

VS

OUT

Features� Photo detector and preamplifier in one package

� Internal filter for PCM frequency

� Improved shielding against electrical field disturbance

� TTL and CMOS compatibility

� Output active low

� Low power consumption

� Suitable burst length ≥10 cycles/burst

Special Features� Enhanced immunity against all kinds of

disturbance light

� No occurrence of disturbance pulses at the output

Block Diagram

94 8136

PIN

Input

AGC

ControlCircuit

BandPass

Demodu-lator

100 k�

1

2

3

VS

OUT

GND

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Absolute Maximum RatingsTamb = 25�C

Parameter Test Conditions Symbol Value UnitSupply Voltage (Pin 2) VS –0.3...6.0 VSupply Current (Pin 2) IS 5 mAOutput Voltage (Pin 3) VO –0.3...6.0 VOutput Current (Pin 3) IO 5 mAJunction Temperature Tj 100 �CStorage Temperature Range Tstg –25...+85 �COperating Temperature Range Tamb –25...+85 �CPower Consumption (Tamb � 85 �C) Ptot 50 mWSoldering Temperature t � 5 s Tsd 260 �C

Basic CharacteristicsTamb = 25�C

Parameter Test Conditions Symbol Min Typ Max UnitSupply Current (Pin 2) VS = 5 V, Ev = 0 ISD 0.4 0.6 1.5 mAy ( )

VS = 5 V, Ev = 40 klx, sunlight ISH 1.0 mASupply Voltage (Pin 2) VS 4.5 5.5 VTransmission Distance Ev = 0, test signal see fig.7,

IR diode TSAL6200, IF = 400 mAd 35 m

Output Voltage Low (Pin 3) IOSL = 0.5 mA,Ee = 0.7 mW/m2, f = fo, tp/T = 0.4

VOSL 250 mV

Irradiance (30 – 40 kHz) Pulse width tolerance: tpi – 5/fo < tpo < tpi + 6/fo, test signal see fig.7

Ee min 0.35 0.5 mW/m2

Irradiance (56 kHz) Pulse width tolerance: tpi – 5/fo < tpo < tpi + 6/fo, test signal see fig.7

Ee min 0.4 0.6 mW/m2

Irradiance tpi – 5/fo < tpo < tpi + 6/fo Ee max 30 W/m2

Directivity Angle of half transmission distance ϕ1/2 ±45 deg

Application Circuit

12844

TSAL62..

TSOP12..2

3

1

4.7 �F *)

�C

>10 k�optional

100 � *) +5V

*) recommended to suppress power supply disturbances

GND

**) The output voltage should not be hold continuously at a voltage below 3.3V by the external circuit.

**)

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Suitable Data FormatThe circuit of the TSOP12..TB1 is designed in thatway that unexpected output pulses due to noise ordisturbance signals are avoided. A bandpassfilter, anintegrator stage and an automatic gain control areused to suppress such disturbances. The distinguishing mark between data signal anddisturbance signal are carrier frequency, burst lengthand duty cycle.

The data signal should fullfill the following condition:

• Carrier frequency should be close to centerfrequency of the bandpass (e.g. 38kHz).

• Burst length should be 10 cycles/burst or longer.

• After each burst which is between 10 cycles and 70cycles a gap time of at least 14 cycles is neccessary.

• For each burst which is longer than 1.8ms acorresponding gap time is necessary at some time inthe data stream. This gap time should be at least 4times longer than the burst.

• Up to 800 short bursts per second can be receivedcontinuously.

Some examples for suitable data format are:NEC Code (repetitive pulse), NEC Code (repetitivedata), Toshiba Micom Format, Sharp Code, RC5Code, RC6 Code, R–2000 Code.

When a disturbance signal is applied to theTSOP12..TB1 it can still receive the data signal.However the sensitivity is reduced to that level that nounexpected pulses will occure.

Some examples for such disturbance signals whichare suppressed by the TSOP12..TB1 are:

• DC light (e.g. from tungsten bulb or sunlight)

• Continuous signal at 38kHz or at any otherfrequency

• Signals from fluorescent lamps with electronicballast with high or low modulation (see Figure A orFigure B).

0 5 10 15 20

time [ms]

Figure A: IR Signal from Fluorescent Lamp with low Modulation

0 5 10 15 20

time [s]

Figure B: IR Signal from Fluorescent Lamp with high Modulation

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Typical Characteristics (Tamb = 25�C unless otherwise specified)

0.7 0.8 0.9 1.0 1.1

E

/

E

– R

el. R

espo

nsiti

vity

e m

in

f / f 0 – Relative Frequency

1.3

94 8143

0.0

0.2

0.4

0.6

0.8

1.0

e

1.2

f = f0�5%�f ( 3dB ) = f0/10

Figure 1. Frequency Dependence of Responsivity

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

0.1 1.0 10.0 100.0 1000.0 10000.0

Ee – Irradiance ( mW/m2 )12841

pot –

Out

put P

ulse

Len

gth

(ms)

Input burst duration

� = 950 nm, optical test signal, fig.7

Figure 2. Sensitivity in Dark Ambient

0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

0.01 0.10 1.00 10.00 100.00

E – DC Irradiance (W/m2)96 12111

e m

inE

Thr

esho

ld I

rrad

ianc

e (m

W/m

)

2 Correlation with ambient light sources(Disturbance effect ) :10W/m2�1.4klx(Stand.illum.A,T=2855 K)�8.2klx

(Daylight,T=5900 K)

Ambient, � = 950 nm

Figure 3. Sensitivity in Bright Ambient

0.0 0.4 0.8 1.2 1.60.0

0.4

0.8

1.2

2.0

E – Field Strength of Disturbance ( kV /m )

2.0

94 8147

1.6

E

Thr

esho

ld Ir

radi

ance

( m

W/m

)

e m

in2

f (E )= f0

Figure 4. Sensitivity vs. Electric Field Disturbances

0.01 0.1 1 10 1000.1

1

10

1000

94 9106 �Vs RMS – AC Voltage on DC Supply Voltage (mV)

E

Thr

esho

ld Ir

radi

ance

( m

W/m

)

e m

in2

f = f0

10 kHz

100 Hz

1 kHz

Figure 5. Sensitivity vs. Supply Voltage Disturbances

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

–30 –15 0 15 30 45 60 75 90

Tamb – Ambient Temperature ( °C )96 12112

e m

inE

Thr

esho

ld I

rrad

ianc

e (m

W/m

)

2

Sensitivity in dark ambient

Figure 6. Sensitivity vs. Ambient Temperature

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Ee

T

tpi *

t

* tpi � 10/fo is recommended for optimal function

VO

VOH

VOLt

16110

Optical Test Signal(IR diode TSAL6200, IF = 0.4 A, 30 pulses, f = f0, T = 10 ms)

Output Signal

td1 ) tpo2

)

1 ) 7/f0 < td < 15/f02 ) tpo = tpi � 6/f0

Figure 7. Output Function

Ee

t

VO

VOH

VOLt

600 �s 600 �s

T = 60 ms

Ton Toff

94 8134

Optical Test Signal

Output Signal, ( see Fig.10 )

Figure 8. Output Function

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

10 20 30 40 50 60 70 80 90

Burstlength [number of cycles/burst]16153

Env

elop

e D

uty

Cyc

le

Figure 9. Max. Envelope Duty Cycle vs. Burstlength

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

0.1 1.0 10.0 100.0 1000.0 10000.0

Ee – Irradiance (mW/m2)12843

on

off

T

,T

Out

put P

ulse

Len

gth

(ms)

Ton

� = 950 nm, optical test signal, fig.8

Toff

Figure 10. Output Pulse Diagram

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

–30 –15 0 15 30 45 60 75 90

Tamb – Ambient Temperature ( °C )96 12115

I –

Sup

ply

Cur

rent

( m

A )

sVs = 5 V

Figure 11. Supply Current vs. Ambient Temperature

750 850 950 10500

0.2

0.4

0.6

0.8

1.2

S (

)

– R

elat

ive

Spe

ctra

l Sen

sitiv

ityre

l

� – Wavelength ( nm )

1150

94 8408

1.0

Figure 12. Relative Spectral Sensitivity vs. Wavelength

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95 11339p2

0.4 0.2 0 0.2 0.4 0.60.6

0.9

0°30°

10° 20°

40°

50°

60°

70°

80°

1.0

0.8

0.7

drel – Relative Transmission Distance

Figure 13. Vertical Directivity ϕy

95 11340p2

0.4 0.2 0 0.2 0.4 0.60.6

0.9

0°30°

10° 20°

40°

50°

60°

70°

80°

1.0

0.8

0.7

drel – Relative Transmission Distance

Figure 14. Horizontal Directivity ϕx

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Dimensions in mm

96 12118

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GND

VO

VS

18.2

9.65

2.6

10.4

3.25

3.05

2.4 ( 2�)

R 1.0 ( 3�)

7.621.27

2.54

1.4

2.6 ( 3�)

3.094 8135

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Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are known asozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs andforbid their use within the next ten years. Various national and international initiatives are pressing for an earlier banon these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use ofODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the EnvironmentalProtection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depletingsubstances and do not contain such substances.

We reserve the right to make changes to improve technical design and may do so without further notice.Parameters can vary in different applications. All operating parameters must be validated for each customer applicationby the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the

buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly orindirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, GermanyTelephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423