Perbepc Ppt

8/8/2019 Perbepc Ppt

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BiomedicalEngineering

(BioE) &VLSI design

Group


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y Previous research has designed the use of MOS transistors toreplace the bipolar transistors as the device is ProportionalTemperature Absolute Threshold (PTAT) circuit, and they havegained temperature one-chip sensor with a smaller size at acertain level linear region. However the linear PTAT responsecan still be extended to meet the needs of the temperaturesensoron a longer range.

y The proposed development used a compensation transistor andan appreciate ratio of the width for the CMOS transistors(W2/W1) in the PTAT circuit.


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y Extend The Linear Region RESPONS OF PTATTemperature Sensors.

y Reducing amount of CMOS transistors then existingPTAT temperature sensor.


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To develop of PTAT TEMPERATURE SENSORS IN ONE-CHIP

CMOS TECHNOLOGY

Objective:


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At first a schematic diagram was drown for the PTAT temperature sensors as Figure 1, using the Mentor Graphics Design Architect IC(DA-IC) v2006.2_4.1

SIMULATED RESULT AND DISCUSSION


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Simulations performed with voltage supply (VDD) variable at 0.1 V to 3 V, on the condition ofratio of transistor width (W2/W1) given, until obtain a value of VDD smallest and the bestlinear respond


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The respond graph of the basic PTAT with various VDD


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The graph of responds PTAT temperature sensors voltage reference in variable width ratio ofthe transistor


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Proposed CMOS PTAT temperature sensors with transistor Compensation


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The graph of responds PTAT temperature sensors voltage reference with transistorcompensation in 1.6 Volt VDD. (final result)


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In this experiment, -40 C to 140 C high linear voltage referencescircuitry for all CMOS Transistor temperature sensors is simulated in

TSMC 0.35.mod. CMOS technology.

The schematic utilized adjusted width composition ratio of the transistor

and complementation technique on PTAT references.

Base on the simulation results, the most appropriate of width compositionratio of PTAT transistor are W2/W1= 5/2 at 1.6 Volt VDD

Another advantage that this result is the composition of the eighttransistors only is quite simple and easy to integrate into the modernsystem-on-chip designs.

CONCLUSION


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Rossi C., Aguire P. 2005. Ultra Low Power CMOS Cells For Temperature

Sensors, SBCCI.

Tsai J. T. S., H. Chiueh. 2006. High Linear Voltage References for on-chip

CMOS Temperature Sensor, IEEE. National Chiao Tung University, Hsinchu 300,

TAIWAN.

H. J. Oguay and D. Aebischer. 1997. CMOSCurrent Reference Without resistance,IEEE Journal of Solid-state Circuits, SC-32(7):1132-1135

S. K. Kar, 2008. Current reference & Voltage reference, Dept. of Electrical Engg., IndianInstitute of Technology Kharagpur.

REFERENCES


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