E620 R&DE620

E720E650

E760

PanasonicDry Etching System

2008

Product NewsDry Etching Equipment

inquiries...

Please read the operation manual carefully when using the equipment.

This equipment is designed for use in a clean room where the air temperature, humidity and cleanliness are controlled.Any equipment operation in other environments may cause a fire, equipment failure, electrical shock or gas leak.

Safety Precautions

* Import and sales of models other than those conforming to the EC machine directive and EMC directive are prohibited in the EC after January 1. 1996.

Panasonic Factory Solutions Co., Ltd.Marketing & Sales Coordination DepartmentOsaka: 2-7 Matsuba-cho, Kadoma, Osaka 571-8502, Japan

Tel: +81-6-6905-4808, Fax: +81-6-6905-5145

ISO14001

Matsushita Group products are built with theenvironment in mind.http://panasonic.co.jp/eco/en/

Matsushita group builds Environmental ManagementSystem in the factories of the world and acquires theInternational Environmental Standard ISO 14001:2004.

**

All data as of March. 1, 2008.

Dry Etching SystemPanasonic Dry Etching Device Suited for The Next Generation Bonding of 3D Lamination,

MEMS, High Aspect and Micro Fabrication, and Device Processing of Difficult Etching Materials.

Medical CareMobile / Personal

Society / Car

Micromachine Playing a Role in Various Area Such as a Sensor, Optical Communic Ation and a Microchip.

Panasonic Makes Great Contribution In Dryetching Processing.

By the microfabricated technology of the semiconductor, a great number of maciromachines come into the world.Development of micromachines are being remarkably advanced by the fusion of biotechnology and nanotechnology.3D microprocessing, 3D structure to be built up the silicon plate and self-configured 3D microstructure are also achieved. By applying these technology, a micro optical switch, a micromotor and a superconducting delivery system are researched and developed for practical use.MEMS is applied for mobile devices or computers and it is also greatly expected to contribute to the advanced information such as in-vehicle devices and optical communication network by development for the use of optical signal control and optical sensing., etc. While the medical technology is dramatically being progressed, increase in life expectancy spurs this technical innovation for medical and welfare use. We are making a great progress and contributions in this field. �e technology is greatly expected to contribute to environmental compatibility such as usage in the biofield, environment measurement and utilization of the mechanism to make living environment comfortable.

Mass production of 3D packaging technology is being expected to the production

solutiondemanded decrease of cycle time such as digital home electronics and mobile terminals.

Product development adapted the new device structure is progressingto support the high speed

and low power consumption of the electronic equipment represented by the mobile phone unit.

It has possibilities for everything such as wireless communication

infrastructure, high speed network equipment, large capacity storage,

transport system, industrial control system and monitoring system.

It is essential for spread to the field for high-end images, screen images,

communication infrastructure., etc.

For the medical and welfare purpose, the technology is applied for

the sensory organ substitution such as microsystems for medical application,

a small amount of hemanalysis andan active catheter to be able to

judge existence or nonexistence of disease and its condition by using

various inspection devicesand applied for manipulation of cells

and DNA molecules.

Focusing on safety and performance technology of the automobile,it is contributed to new development that automobile manufacturers

compete to developthe weight sensor and the acceleration sensor as well as the angular speed sensor.

Digital camera (CMOS sensor and Hand movement sensor)

Mobile phone (RF switch, Hand movement sensor, Gyro switch and Microphone )

Personal computer (Flash memory and DRAM)

Game machines/AV equipment (Switch, Controller for game)

Home Use Equipment

BluetoothWireless routerServerCommunications satelliteOptical fiber network

Electronic payment for shoppingElectronic payment for public transportationCitizen Services

In-vehicle equipmentAcceleration sensorCar navigation

Pressure sensor, angular sensorVoice-recognition systemAir back sensor

Infrastructure

Remote medical checkup

Body artificialauxiliary component

Care medical support system

Pressure sensor for the blood-pressure meter., etc.

Medical System

Electronic Payment System In-vehicle Equipment

MEMS

Power Device

TSV(Through-Si Vias)

1 2

3 4

Panasonic Dry etching device to enable TSV (�rough-Sivia) processing used for 3D laminated device which is a main of the next generation bonding, deep drilling processing on a silicon plate and metal processing to support various MEMS devices, high aspect and micro fabrication for the power device and processing of difficult etching materials.

Simple & Compact

E600High Performance & Compact

E700

ETCH

LOADLOCK

ETCH ETCH

TRANSFERCHAMBER

LOADLOCK

ETCH ETCH

ASH ASH

TRANSFERCHAMBER

LOADLOCK

ETCH

LOADLOCK

ETCH

ASHLOADLOCK

Rich Lineup Supported for Device Evolution

E620 E650 E720 E760E620 R&D

MSC type ICP/RIE

75~200mm

MSC type ICP/RIE

75~200mm

Single-wafer manual placement and automatic transfer

Gate material (Poly-Si, Wsi, W etc)

Insulation film (SiO2, SiN etc)

Non-volatile material (Pt, Au, Ir, NiFe etc)

Ferroelectric Material (PZT, SBT etc)

Deep-Si (MEMS)

III-V group compounds (GaAs, GaN, InP etc)

Others (SiC, Al2O3, resin, quartz, Mo, Ru etc)

Simple and compact chamber

MSC type ICP/RIE

75~200mm

Corrosion-free by etching + ashing

Metal wiring (Al, Ti, TiN etc)

Corrosive material (NiFe, PZT, SBT etc)

Advanced ICP/RIE

75~200mm

Advanced ICP/RIE

75~200mm

Corrosion-free by etching + ashingHigh area productivityMulti-chamber design

Gate material (Poly-Si, Wsi, W etc)

Insulation film (SiO2, SiN etc)

Non-volatile material (Pt, Au, Ir, NiFe etc)

Ferroelectric Material (PZT, SBT etc)

Deep-Si (MEMS)

III-V group compounds (GaAs, GaN, InP etc)

Others (SiC, Al2O3, resin, quartz, Mo, Ru etc)

Metal wiring

Photo-mask (Cr, Si, Ru, SiO2, Silicide)

Corrosive material (NiFe, PZT, SBT etc)

For R&D use Low cost (Same chamber as that for E620)

Series Series

5 6

110µm

Si E/R 56 µm/min Depth > 110 µm

TSV Real Structure(Si/SiO2/Metal/Sub.)

50µm

SiO2

Si

Metal(under layer)

TSV Viaø 10 µm x depth 30 µm

85.6µm

87.2µm

88.4µm

TSV Real Structure(Si/SiO2/Metal/Sub.)

SiO2

Si

Metal(under layer)

85.6µm

87.2µm

88.4µm

102.2µm

82.4µm

87.9µm

ø 80 µm x depth 100 µm

3D-BareTSV Die Stacking

102.2µm

82.4µm

87.9µm

Vertical Shape Taper Shape

90˚

50µm 50µm

10µm10µm

89˚

ø 10 µm x depth 30 µm ø 80 µm x depth 100 µm

P-BGA(WB)

FBGA

FC-BGA

Si-Interposer

Stacked SiP

POP

WL-CSP

TSV Die Stacking

Optical Interconnect

Wireless Interconnect

MEMS Devices

3D-Bare Chip

T-BGA

Low Cost / Handheld

High Performance

Cost Performance1990年 2000年 2010年 2020年

3D-Bare

�e device such as the mobile product of CMOS/CCD which is represented as the mobile phone is being expected to be undergoing big change.We provide higher accuracy and smaller size devices which are demanded for laminated DRAM and CMOS image sensor, etc essential for mobile equipment.Furthermore, we contribute to produce the higher-level 3D image sensor used in medical and biological field, DSP and memory, etc.

Semiconductor Package Development Trend

Support Various Dry Etching and Ashing of TSV Process

Etching Case of TSV (�rough-Si Vias) Stoke

Developed the Dry Etching technology for Through-Silicon Via toward small and thin CMOS image sensor (We have introduction result of mass production)

Currently developing the fine process technology for memories (DRAM and Flash)

Si Through-hole Electrode Structure (TSV Die Stack)

Stack DRAM

Surface of element formation

Silicon through-hole electrode

COMS image sensor Protective glassSource: 2007 version Japan Jisso Technology Roadmap

Resin

Through electrode

Solder bump

Mask (TEOS) Dry Etching Resist Ashing

Through-silicon Via Dry Etching

Sio2 Via Bottom Dry Etching

Possible the fine via hole processing

Compatibility of shape control and high speed processing (Bowingless and smoothing)

Achieving uniform and stable processing in 8-inch

Uniform and stable processing of SiO2 via bottom

Stop at the metal layer

Notch-free

Si substrate

SiO2

Glass

3d Image SensorCOMS image sensor

Stack DRAM

Flash memories

Fine and Through-silicon Via Hole Process Via Bottom Sio2 Process Taper Control Process High Speed and Overall Process

µm/min56High-Speed

Under development

Jisso Trend Map

7 8

500µm

40µm

83µm 3.06µm

0.3µm

36µm

2.2µm

1.50µm

Deep Etching High Aspect Ratio Vertical Shape Taper Shape

100µm

50µm

11µm

SiO2 Hard Mask: 0.3 µm L&S (CD Shift < ±14 nm)

Fine Pitch Stacked Metal: 0.25 µm L&S

AL SiO2 Quartz SiC Via

150µm

GaN: Smooth Surface InP-Via: E/R > 5 µm

GaN Pt Au Cu

Pt: E/R > 200 nm/min Au: (PR Mask) Cu: (PR Mask)

Notch-free SOI substrate

InP-Via

Vertical ShapeL/S = 100 nm/200 nm

Taper Shape

86.4˚ 1.50µm0.75µm

0.20µm

0.35µm

0.22µm

35µm

MEMS/BOSCH/Deep-Si ( High Aspect & Deep-trench Etching) High Aspect Etching & Deep-trench Etching

Long Maintenance Cycle Has Been ProvenHigh Rate Via Etching (SiC, InP) / Smooth Etching (GaN) Various Applications and Mass Production Experiences

Highest Speed

Fundamentals of �e Latest Technology Proven by Its Number of Uses and High ReliabilityPlasma Technology

MSC (Multi-Spiral Coil) Type Advanced ICP

Proprietary Plasma Source

Low-inductance induction coil achieves high power efficiency.

Optimized coil shape achieves highly uniform etching.

1.5 times more efficient than a single spiral.Excellent matching characteristics can provide a stable electric discharge over a wide range of pressure.

Low-pressure high-density plasma enables micro-processing and high-aspect-ratio etching.

High Accuracy

High Efficiency

High Uniformity

-150 150-100 100-50 5000.0

0.2

0.4

0.6

0.8

1.0

Advanced ICP

Wafer position (mm)

Pla

sma

dens

ity (a

ny u

nit o

f mea

sure

)

Advanced ICP plasma density

10

8

6

4

2

00 500 1000 1500 2000

ICP power (W)

Cur

rent

den

sity

(mA

/cm

2 )

Power dependency of advanced-ICP ion saturation current density

Uniformity : ± 3.7%

ø 200mm Wafer area

CI2=100sccm, 1Pa

Advanced-ICP Configuration

ICP coil

Matching circuit

Quartz plate

Wafer

RF

RF

Etching chamber

Bottom electrode

Proprietary Transfer Mechanism

High-speed high-reliability wafer transfer by the proprietary fully cam-operated mechanism.

For applications not requiring micro-processing! Excellent cost performance. (Plasma source is selectable for each application)

MTBF of the cam-driven transfer mechanism > 60,000 hours(There have been no problems for 6 years)

RIE System

35µm

Support for Various Materials Metal: Ti, Ir, Cr, NiCo, NiFe / Insulation film: Quartz, sapphire and AIN / Others: PZT, LT, LN

Panasonic supports the mass-production of leading-edge thin-film devices with technologies developed using a variety of semiconductor manufacturing equipment (3 to 8 inches). Provides the industry's top processing performance.

Excellent Etching Performance (Etched Sample by ICP)

Simple & Compact

E600

1500

3700

995

510

2400

1000

1900

操作盤可動式

1100

1800

3700

995

510

1000

2400

1900

操作盤

Series

2.6㎡1,100mm

1,000mm 2.4㎡

E650 Series

E620 R&D SeriesEasy maintenance made possible by the simple chamber structure. Easily detachable top quartz component and inner chamber. Built-in chamber heater improves process stability by suppressing the attachment/separation of the reaction product.

– Real-time displays of wafer position, transfer arm and gate condition.

– 100 recipes can be preset for a chamber.

– Up to 20 steps can be set for a recipe.

■

■

■

■

■■

■

■

■

1000

MSC Type ICP

MSC Type RIE

75~200mm

SingleChamber

Advanced Function and High-reliability Further Improved with Space-saving Design

High Serviceability Chamber Structure

The 15-inch color graphic screen makes the operation easier. Full-range of maintenance functions built into the system.

Easy-to-see Graphic Screen

Improves Operation and Control

Industry’s smallest footprint as full automatic production-capable equipment. Integrated control rack into the main unit further improves the compactness.

Space-saving Design

(mm)

Equipment Status Screen

Recipe Input Screen

Gas inlet port built into a showerhead

Large-flow high-speed gas discharge (2400 liter/sec)

Electric Static Chuck

High-accuracy emission spectroscopic EPM, laser EPM

ESC or mechanical clamp selectable

Adaptable to a variety of wafer sizes and shapes

(square substrate, glass plate etc.)

Clean module unit

Full-range of Optional Functions

Gate material (Poly-Si, Wsi, W etc.)

Insulation film (SiO2, SiN etc.)

Non-volatile material (Pt, Au, Ir, NiFe etc.)

Ferroelectric Material (PZT, SBT etc.)

Deep-Si (MEMS), III-V group compounds (GaAs, GaN, InP etc.)

Others (SiC, Al2O3, resin, quartz, Mo, Ru etc.)

Equipment width Installed area

Equipment width Installed area

– Single-wafer manual placement and automatic transfer– For R&D use Low cost (Same chamber as that for E620)

E620 Series– Simple and compact chamber

Corrosion-free by etching + ashing

�e best seller with its ultimate simplicity and compactness

– Integrated etching and ashing– The ashing chamber combined with an ICP down-flow plasma can handle resist ashing after all types of metal etching and improve the anti-corrosion performance.

Metal wiring (Al, Ti, TiN etc.)

Corrosive material (NiFe, PZT, SBT etc.)

2400

Vast Experience Built Up in Mass Production E600 Series

E620 R&D E620 E650

9 10

High Performance & Compact

3480

2037

1000

1900

8622600

1400

1200

F.L.

2250

1900 2037

862

1760

1200

2600

F.L.

E700Series

4.6㎡1,760 mm

1,400 mm 3.6㎡

E760 Series

E720 Series

AdvancedICP

AdvancedRIE

75~200mm

MultiChamber

High Productivity Achieved by �e Multi-chamber System by �e High-vacuum Discharge System.

60.0

50.0

40.0

30.0

20.0

10.0

0.00.0 50.0 100.0 150.0

(Sl/h) E720 (Two etching chambers) E620 (One etching chamber)

Electric discharge time (sec.)

High productivity achieved by the multi-chamber system.

Up to Four Loadable Chambers

High throughput when using two etching chambers

Integration of the control unit and gas supply unit into the main equipment makes dual-chamber equipment as compact as a single-chamber equipment.

Footprint Within The Industry’s Smallest Class

14

12

10

8

6

4

2

0100 200 300 400 500 600 700

N2 flow rate (sccm: standard cm3/min)

Cham

ber pressure (Pa)

Use of a large-diameter chamber reduces the effects of the wall surface.

High Flow-rate High-vacuum Discharge System Increases Process Margin

Closed side limit value Fully open

Gas discharge characteristics

Advanced ICP and showerhead achieve high-accuracy uniform processing.

High-accuracy High-uniformity Processing

Use of a slide type gate reduces dust generation.

Reduced Dust Generation

Easily replaceable quartz plate, inner cover, electrodes etc. make maintenance simple and easy.

Ease of Maintenance

Improved operability and automatic maintenance check function

– Up to 100 recipes can be assigned to each chamber. – Each recipe can contain up to 20 steps.

Graphic User Interface In English and Japanese

E600-model etching chamber is selectable (E700-SC series)

Gas supply port built into the showerhead

Large flow-rate high-speed evaluation (2400 liter/sec)

Electric Static Chuck

High-accuracy emission spectroscopic EPM, laser EPM

ESC or mechanical clamp selectable

Accepts various wafer sizes and shapes

(square wafer, glass substrate etc.)

Clean module unit

Options

■

■

■

■

■

■

■

■

– Largely versatile multi-chamber design– High-performance and compact

Metal wiring

Photo-mask (Cr, Si, Ru, SiO2, Silicide)

Corrosive material (NiFe, PZT, SBT etc.)

– Multi-chamber design with two etching and two ashing chambers

Equipment width Installed area

Equipment width Installed area

Corrosion-free by etching + ashing

High area productivity Multi-chamber design

Gate material (Poly-Si, Wsi, W etc.)

Insulation film (SiO2, SiN etc.)

Non-volatile material (Pt, Au, Ir, NiFe etc.)

Ferroelectric Material (PZT, SBT etc.)

Deep-Si (MEMS)

III-V group compounds (GaAs, GaN, InP etc.)

Others (SiC, Al2O3, resin, quartz, Mo, Ru etc.)

High-performance E700 Series with The Multi-chamber

E720 E760E760

11 12

13 14

E720 E760E620 R&D E650

ETCH

LOADLOCK

ETCH ETCH

TRANSFERCHAMBER

LOADLOCK

ETCH ETCH

ASH ASH

TRANSFERCHAMBER

LOADLOCK

E620

ETCH

LOADLOCK

ETCH

ASHLOADLOCK

7.5 KVA

26 KVA

2 KVA

9 KVA

20 L/min

ー

20 L/min

40 L/min

1.0 m3/min

4.9 m3/min

1,800 kg

1,500 kg

7.5 KVA

35 KVA

2 KVA

14.5 KVA

40 L/min

0.01 L/min

20 L/min

40L /min

1.5 m3/min

4.9 m3/min

2,300 kg

1,800 kg

(Built-in transformer)

42 KVA

ー

16 KVA

46 l/min

ー

20 L/min

40 L/min

2.0 m3/min

9.8 m3/min

3,200 kg

2,100 kg

(Built-in transformer)

60 KVA

ー

21 KVA

62 L/min

ー

70 L/min

40 L/min

2.5 m3/min

11.8 m3/min

4,000 kg

2,500 kg

7.5 KVA

26 KVA

2 KVA

9 KVA

20 L/min

ー

20 L/min

40 L/min

1.0 m3/min

4.9 m3/min

1,800 kg

1,500 kg

TSV (Through-Si Vias) MEMS Power Device

The high performance and reliability achieved through our unique plasma

sources (ICP and RIE) and board transfer mechanism, coupled with the

industry's smallest footprint, provide excellent cost performance.

High Cost-Performance with Precision & Reliability

High Cost-Performance

A wide variety of applications meet the processing needs of diverse

devices and new materials, such as Si semiconductors, MEMS,

compound semiconductors, and nonvolatile materials.

Deep Si etching, and etching of SiO2, quartz, and other difficult-to-process

materials can be performed on the same platform.

Applications for Various Needs

Applications for Various Needs

Strongly supports the total process from research right through to

manufacturing based on the vast experience built up in mass

production. Supports 3 to 8-inch diameter boards and square boards.

Total Support for R&D and Mass Production

Total Support

Equipment Specifications

Utility and Equipment Mass Specifications

Gas Supply Unit

Gas Discharge System

Wafer Transfer System

Control System

Etching & Ash Composition Chart

Etching Chamber 1

Etching Chamber 2

Ashing Chamber

Load Lock

Maximum 3 Systems

Tmp + Dry Pump

—

—

Cam-driven Double-arm Wafer Transfer System

Maximum 6 Systems

Tmp + Dry Pump

—

—

Maximum 6 Systems

Tmp + Dry Pump

—

Dry Pump

Dry Pump

*Use the filter.

Cassette to Cassette / Cam-driven Double-arm Wafer Transfer System

Keyboard at One Location / 10.4-inch LCD at One Location (Movable Between The Front and Back)

Max. 6 Systems X 2 Chambers Max. 6 Systems X 4 Chambers

Dry Pump

Tmp + Dry Pump

Tmp + Dry Pump

Dry Pump

Cassette to Cassette / Cam-driven Double-arm Wafer Transfer System

Keyboard at One Location / 15-inch LCD at One Location

Power Capacity

Power Consumption

Water

Dry Air

Discharge

Process Gas

Grounding

Equipment Mass

(1ø) AC 100 V

(3ø) AC 200 V

(1ø) AC 100 V

(3ø) AC 200 V

Cooling Water* (0.3 To 0.5 MPa)

Super Purified Water (0.1 To 0.2 MPa)

Purging Nitrogen (99.9% Purity)

Atmospheric Dew Point (17°c)

General Discharge (–196 Pa)

Oxygen Discharge (–200 Pa)

Total Mass

Main Unit

User Preparation

Type 1 Grounding

User Preparation

Type 1 Grounding

E620 R&D E620E720E650

E760

PLASMADRY ETCHING SYSTEM

Specifications

E620 R&DE620

E720E650

E760

PanasonicDry Etching System

2008

Product NewsDry Etching Equipment

inquiries...

Please read the operation manual carefully when using the equipment.

This equipment is designed for use in a clean room where the air temperature, humidity and cleanliness are controlled.Any equipment operation in other environments may cause a fire, equipment failure, electrical shock or gas leak.

Safety Precautions

* Import and sales of models other than those conforming to the EC machine directive and EMC directive are prohibited in the EC after January 1. 1996.

Panasonic Factory Solutions Co., Ltd.Marketing & Sales Coordination DepartmentOsaka: 2-7 Matsuba-cho, Kadoma, Osaka 571-8502, Japan

Tel: +81-6-6905-4808, Fax: +81-6-6905-5145

ISO14001

Matsushita Group products are built with theenvironment in mind.http://panasonic.co.jp/eco/en/

Matsushita group builds Environmental ManagementSystem in the factories of the world and acquires theInternational Environmental Standard ISO 14001:2004.

**

All data as of March. 1, 2008.

Dry Etching SystemPanasonic Dry Etching Device Suited for The Next Generation Bonding of 3D Lamination,

MEMS, High Aspect and Micro Fabrication, and Device Processing of Difficult Etching Materials.