S.A. Bogacz- Superlattice Crystal Accelerator: Acceleration Beyond GeV/m
Operated by the Southeastern Universities Research Association for the U.S. Depart. Of Energy Thomas...
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![Page 1: Operated by the Southeastern Universities Research Association for the U.S. Depart. Of Energy Thomas Jefferson National Accelerator Facility Strained superlattice.](https://reader036.fdocuments.in/reader036/viewer/2022082805/5514e017550346a80c8b4587/html5/thumbnails/1.jpg)
Operated by the Southeastern Universities Research Association for the U.S. Depart. Of Energy
Thomas Jefferson National Accelerator Facility
Strained superlattice from SVT
GaAs P1-x x , 0<x<0.36 (2.5 μm)
p-type GaAs substrate
GaAs (5 nm)
GaAs (4 nm)
GaAsP (3 nm)
GaAs P0.64 0.36 (2.5 μm)
14 pairs
5.1019
5.1017
5.1018
Be doping
![Page 2: Operated by the Southeastern Universities Research Association for the U.S. Depart. Of Energy Thomas Jefferson National Accelerator Facility Strained superlattice.](https://reader036.fdocuments.in/reader036/viewer/2022082805/5514e017550346a80c8b4587/html5/thumbnails/2.jpg)
Operated by the Southeastern Universities Research Association for the U.S. Depart. Of Energy
Thomas Jefferson National Accelerator Facility
Quantum Efficiency
At bandgap:
I ~ 6 muA/mW
![Page 3: Operated by the Southeastern Universities Research Association for the U.S. Depart. Of Energy Thomas Jefferson National Accelerator Facility Strained superlattice.](https://reader036.fdocuments.in/reader036/viewer/2022082805/5514e017550346a80c8b4587/html5/thumbnails/3.jpg)
Operated by the Southeastern Universities Research Association for the U.S. Depart. Of Energy
Thomas Jefferson National Accelerator Facility
Polarization
Pe ~ 80% at 780 nm
![Page 4: Operated by the Southeastern Universities Research Association for the U.S. Depart. Of Energy Thomas Jefferson National Accelerator Facility Strained superlattice.](https://reader036.fdocuments.in/reader036/viewer/2022082805/5514e017550346a80c8b4587/html5/thumbnails/4.jpg)
Operated by the Southeastern Universities Research Association for the U.S. Depart. Of Energy
Thomas Jefferson National Accelerator Facility
Analyzing power
SVT superlattice: A.P. ~ 3%
Peak to peak A.P.
Spire strained layer: A.P. ~ 10%
![Page 5: Operated by the Southeastern Universities Research Association for the U.S. Depart. Of Energy Thomas Jefferson National Accelerator Facility Strained superlattice.](https://reader036.fdocuments.in/reader036/viewer/2022082805/5514e017550346a80c8b4587/html5/thumbnails/5.jpg)
Operated by the Southeastern Universities Research Association for the U.S. Depart. Of Energy
Thomas Jefferson National Accelerator Facility
Conclusions
• Polarization at least as high as S.L. P ~ 80%
• QE is 5 times higher than S.L. QE ~ 1%
• Analyzing power smaller A.P. ~ 3%
• Wafer treatment different, under study
• Sample loaded in tunnel failed
Highs:
Lows:
![Page 6: Operated by the Southeastern Universities Research Association for the U.S. Depart. Of Energy Thomas Jefferson National Accelerator Facility Strained superlattice.](https://reader036.fdocuments.in/reader036/viewer/2022082805/5514e017550346a80c8b4587/html5/thumbnails/6.jpg)
Operated by the Southeastern Universities Research Association for the U.S. Depart. Of Energy
Thomas Jefferson National Accelerator Facility
Polarization uniformity
Uniform across a single chip