October 2010 FDD86102LZ - docs-apac.rs- · PDF fileVery low Qg and Qgd compared to competing...

FDD

86102LZ N-C

hannel PowerTrench ® M

OSFET

©2010 Fairchild Semiconductor CorporationFDD86102LZ Rev.C

www.fairchildsemi.com1

October 2010FDD86102LZ N-Channel PowerTrench® MOSFET

100 V, 35 A, 22.5 mΩFeatures

Max rDS(on) = 22.5 mΩ at VGS = 10 V, ID = 8 A

Max rDS(on) = 31 mΩ at VGS = 4.5 V, ID = 7 A

HBM ESD protection level > 6 kV typical (Note 4)

Very low Qg and Qgd compared to competing trench technologies

Fast switching speed

100% UIL tested

RoHS Compliant

General DescriptionThis N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss. G-S zener has been added to enhance ESD voltage level.

ApplicationsDC - DC Conversion

Inverter

Synchronous Rectifier

G

S

D

TO-252D-PAK(TO-252)

D

S

G

MOSFET Maximum Ratings TC = 25 °C unless otherwise noted

Thermal Characteristics

Package Marking and Ordering Information

Symbol Parameter Ratings UnitsVDS Drain to Source Voltage 100 VVGS Gate to Source Voltage ±20 V

ID

Drain Current -Continuous (Package limited) TC = 25 °C 42

A -Continuous (Silicon limited) TC = 25 °C 35 -Continuous TA = 25 °C (Note 1a) 8 -Pulsed 40

EAS Single Pulse Avalanche Energy (Note 3) 84 mJ

PDPower Dissipation TC = 25 °C 54

WPower Dissipation TA = 25 °C (Note 1a) 3.1

TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C

RθJC Thermal Resistance, Junction to Case 2.3°C/W

RθJA Thermal Resistance, Junction to Ambient (Note 1a) 40

Device Marking Device Package Reel Size Tape Width QuantityFDD86102LZ FDD86102LZ D-PAK(TO-252) 13 ’’ 12 mm 2500 units

FDD

86102LZ N-C


OSFET



Electrical Characteristics TJ = 25 °C unless otherwise noted

Off Characteristics

On Characteristics (Note 2)

Dynamic Characteristics

Switching Characteristics

Drain-Source Diode Characteristics

Symbol Parameter Test Conditions Min Typ Max Units

BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 100 VΔBVDSS ΔTJ

Breakdown Voltage TemperatureCoefficient ID = 250 μA, referenced to 25 °C 69 mV/°C

IDSS Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V 1 μAIGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±10 μA

VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA 1.0 1.5 3.0 V ΔVGS(th) ΔTJ

Gate to Source Threshold VoltageTemperature Coefficient ID = 250 μA, referenced to 25 °C -6 mV/°C

rDS(on) Static Drain to Source On ResistanceVGS = 10 V, ID = 8 A 17.8 22.5

mΩVGS = 4.5 V, ID = 7 A 23.2 31VGS = 10 V, ID = 8 A, TJ = 125 °C 31.1 40

gFS Forward Transconductance VDS = 5 V, ID = 8 A 31 S

Ciss Input CapacitanceVDS = 50 V, VGS = 0 V,f = 1 MHz

1157 1540 pFCoss Output Capacitance 181 245 pFCrss Reverse Transfer Capacitance 7.7 15 pFRg Gate Resistance 0.6 Ω

td(on) Turn-On Delay TimeVDD = 50 V, ID = 8 A,VGS = 10 V, RGEN = 6 Ω

6.6 14 nstr Rise Time 2.3 10 nstd(off) Turn-Off Delay Time 20 32 nstf Fall Time 2.3 10 nsQg Total Gate Charge VGS = 0 V to 10 V

VDD = 50 V, ID = 8 A

18 26 nCQg Total Gate Charge VGS = 0 V to 4.5 V 8.7 13 nCQgs Gate to Source Gate Charge 2.7 nCQgd Gate to Drain “Miller” Charge 2.4 nC

VSD Source to Drain Diode Forward VoltageVGS = 0 V, IS = 8 A (Note 2) 0.82 1.3

VVGS = 0 V, IS = 2.6 A (Note 2) 0.75 1.2

trr Reverse Recovery TimeIF = 8 A, di/dt = 100 A/μs

43 70 nsQrr Reverse Recovery Charge 43 70 nC

Notes:1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user’s board design.

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.

3. Starting TJ = 25°C, L = 1 mH, IAS = 13 A, VDD = 90 V, VGS = 10 V.

4. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.

a. 40 °C/W when mounted on a 1 in2 pad of 2 oz copper.

b. 96 °C/W when mounted on a minimum pad of 2 oz copper.

FDD

86102LZ N-C


OSFET

©20FDD

Typical Characteristics TJ = 25 °C unless otherwise noted

Figure 1.

0 1 2 3 4 50

10

20

30

40

VGS = 3.5 V VGS = 3 V

VGS = 10 V

PULSE DURATION = 80 μsDUTY CYCLE = 0.5% MAX

VGS = 2.5 V

VGS = 4.5 V

I D, D

RA

IN C

UR

REN

T (A

)

VDS, DRAIN TO SOURCE VOLTAGE (V)

On-Region Characteristics Figure 2.

0 10 20 30 400

1

2

3

4

5VGS = 2.5 V


NO

RM

ALI

ZED

DR

AIN

TO

SO

UR

CE

ON

-RES

ISTA

NC

E

ID, DRAIN CURRENT (A)

VGS = 4.5 V

VGS = 3.5 V

VGS = 3 V

VGS = 10 V

Normalized On-Resistance vs Drain Current and Gate Voltage

Figure 3. Normalized On- Resistance

-75 -50 -25 0 25 50 75 100 125 1500.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

ID = 8 AVGS = 10 V

NO

RM

ALI

ZED

DR

AIN

TO

SO

UR

CE

ON

-RES

ISTA

NC

E

TJ, JUNCTION TEMPERATURE (oC)

vs Junction TemperatureFigure 4.

2 4 6 8 100

30

60

90

120

TJ = 125 oC

ID = 8 A

TJ = 25 oC

VGS, GATE TO SOURCE VOLTAGE (V)

r DS(

on),

DR

AIN

TO

SO

UR

CE

ON

-RES

ISTA

NC

E (m

Ω) PULSE DURATION = 80 μs

DUTY CYCLE = 0.5% MAX

On-Resistance vs Gate to Source Voltage

Figure 5. Transfer Characteristics

0 1 2 3 4 50

10

20

30

40

TJ = 25 oCTJ = 150 oC

VDS = 5 V


TJ = -55 oC

I D, D

RA

IN C

UR

REN

T (A

)


Figure 6.

0.0 0.2 0.4 0.6 0.8 1.0 1.20.001

0.01

0.1

1

10

50

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

VGS = 0 V

I S, R

EVER

SE D

RA

IN C

UR

REN

T (A

)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Source to Drain Diode Forward Voltage vs Source Current

10 Fairchild Semiconductor Corporation86102LZ Rev.C


FDD

86102LZ N-C


OSFET

©20FDD

Figure 7.

0 5 10 15 200

2

4

6

8

10ID = 8 A

VDD = 50 V

VDD = 25 V

V GS,

GA

TE T

O S

OU

RC

E VO

LTA

GE

(V)

Qg, GATE CHARGE (nC)

VDD = 75 V

Gate Charge Characteristics Figure 8.

0.1 1 10 1001

10

100

10002000

f = 1 MHzVGS = 0 V

CA

PAC

ITA

NC

E (p

F)

VDS, DRAIN TO SOURCE VOLTAGE (V)

Crss

Coss

Ciss

Capacitance vs Drain to Source Voltage

Figure 9.

0.001 0.01 0.1 1 10 301

10

40

TJ = 100 oC

TJ = 25 oC

TJ = 125 oC

tAV, TIME IN AVALANCHE (ms)

I AS,

AVA

LAN

CH

E C

UR

REN

T (A

)

Unclamped Inductive Switching Capability

Figure 10.

0 5 10 15 20 25 30 3510-9

10-8

10-7

10-6

10-5

10-4

10-3

10-2

10-1

VGS = 0 V

TJ = 125 oC

TJ = 25 oC


I g, G

ATE

LEA

KA

GE

CU

RR

ENT

(A)

Gate Leakage Current vs Gate to Source Voltage

Figure 11.

25 50 75 100 125 1500

10

20

30

40

VGS = 4.5 V

RθJC = 2.3 oC/W

VGS = 10 V

I D, D

RA

IN C

UR

REN

T (A

)

TC, CASE TEMPERATURE (oC)

Maximum Continuous Drain Current vs Case Temperature

Figure 12.

0.1 1 10 100 3000.050.1

1

10

100

100us

10 ms

DC

1 ms

I D, D

RA

IN C

UR

REN

T (A

)

VDS, DRAIN to SOURCE VOLTAGE (V)

THIS AREA IS LIMITED BY rDS(on)

SINGLE PULSETJ = MAX RATEDRθJC = 2.3 oC/WTC = 25 oC

Forward BiasSafe Operating Area




FDD

86102LZ N-C


OSFET

©20FDD

Figure 13.

10-5 10-4 10-3 10-2 10-1 110

100

1000

10000P (P

K), P

EAK

TR

AN

SIEN

T PO

WER

(W)

SINGLE PULSERθJC = 2.3 oC/W

TC = 25 oC

t, PULSE WIDTH (sec)

Single Pulse Maximum Power Dissipation

Figure 14. Junction-to-Case Transient Thermal Response Curve

10-5 10-4 10-3 10-2 10-1 10.005

0.01

0.1

1

SINGLE PULSERθJC = 2.3 oC/W

DUTY CYCLE-DESCENDING ORDER

NO

RM

ALI

ZED

TH

ERM

AL

IMPE

DA

NC

E, Z

θJC

t, RECTANGULAR PULSE DURATION (sec)

D = 0.5 0.2 0.1 0.05 0.02 0.01

2

PDM

t1t2

NOTES:DUTY FACTOR: D = t1/t2PEAK TJ = PDM x ZθJC x RθJc + TC






FDD

86102LZ N-C


OSFET

TRADEMARKSThe following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used here in:1. Life support devices or systems are devices or systems which, (a) are

intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.

2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONSDefinition of Terms

AccuPower™Auto-SPM™Build it Now™CorePLUS™CorePOWER™CROSSVOLT™CTL™Current Transfer Logic™DEUXPEED®

Dual Cool™EcoSPARK®

EfficentMax™ESBC™

Fairchild®

Fairchild Semiconductor®FACT Quiet Series™FACT®

FAST®

FastvCore™FETBench™FlashWriter® *FPS™

F-PFS™FRFET®

Global Power ResourceSM

Green FPS™Green FPS™ e-Series™Gmax™GTO™IntelliMAX™ISOPLANAR™MegaBuck™MICROCOUPLER™MicroFET™MicroPak™MicroPak2™MillerDrive™MotionMax™Motion-SPM™OptiHiT™OPTOLOGIC®

OPTOPLANAR®®

PDP SPM™

Power-SPM™PowerTrench®

PowerXS™Programmable Active Droop™QFET®

QS™Quiet Series™RapidConfigure™

Saving our world, 1mW/W/kW at a time™SignalWise™SmartMax™SMART START™SPM®

STEALTH™SuperFET™SuperSOT™-3SuperSOT™-6SuperSOT™-8SupreMOS™SyncFET™Sync-Lock™

®*

The Power Franchise®

®

TinyBoost™TinyBuck™TinyCalc™TinyLogic®

TINYOPTO™TinyPower™TinyPWM™TinyWire™TriFault Detect™TRUECURRENT™*μSerDes™

UHC®

Ultra FRFET™UniFET™VCX™VisualMax™XS™

®

tm

tm

Datasheet Identification Product Status Definition

Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Preliminary First ProductionDatasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.

ANTI-COUNTERFEITING POLICYFairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support.Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.

Rev. I48

™

October 2010 FDD86102LZ - docs-apac.rs- · PDF fileVery low Qg and Qgd compared to competing...

Documents

Transcript of October 2010 FDD86102LZ - docs-apac.rs- · PDF fileVery low Qg and Qgd compared to competing...