To learn more about onsemi™, please visit our website at www.onsemi.com

ON Semiconductor

Is Now

onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.

© Semiconductor Components Industries, LLC, 2019

July, 2021 − Rev. 31 Publication Order Number:

NVG800A75L4DSC/D

Automotive 750 V, 800 ADual Side CoolingHalf-Bridge Power Module

VE-Trac� DualNVG800A75L4DSCProduct Description

The NVG800A75L4DSC is part of a family of power modules withdual side cooling and compact footprints for Hybrid (HEV) andElectric Vehicle (EV) traction inverter application.

The module consists of two Field Stop 4 (FS4) 750 V Narrow MesaIGBTs in a half−bridge configuration. The chipset utilizes the newnarrow mesa IGBT technology in providing high current density androbust short circuit protection with higher blocking voltage to deliveroutstanding performance in EV traction applications.

Features• Dual−Side Cooling

• Integrated Chip Level Temperature and Current Sensor

• Tvj max = 175°C for Continuous Operation

• Ultra−low stray inductance

• Low VCESAT and Switching Losses

• Automotive Grade FS4 & Fast Diode Chip Technologies

• 4.2 kV Isolated DBC Substrate

• AEC Qualified and PPAP Capable

• This Device is Pb−Free and is RoHS Compliant

Typical Applications• Hybrid and Electric Vehicle Traction Inverter

• High Power DC−DC Converter

See detailed ordering and shipping information on page 5 ofthis data sheet.

ORDERING INFORMATION

www.onsemi.com

AHPM15−CEACASE 100DD

VE−Trac� Dual NVG800A75L4DSC

www.onsemi.com2

PIN DESCRIPTION

Pin # Pin Pin Function Description Pin Arrangement

1 N Low Side Emitter

2 P High Side Collector

3 H/S COLLECTOR SENSE High Side Collector Sense

4 H/S CURRENT SENSE High Side Current Sense

5 H/S EMITTER SENSE High Side Emitter Sense

6 H/S GATE High Side Gate

7 H/S TEMP SENSE (CATHODE) High Side Temp sense Diode Cathode

8 H/S TEMP SENSE (ANODE) High Side Temp sense Diode Anode

9 ~ Phase Output

10 L/S CURRENT SENSE Low Side Current Sense

11 L/S EMITTER SENSE Low Side Emitter Sense

12 L/S GATE Low Side Gate

13 L/S TEMP SENSE (CATHODE) Low Side Temp sense Diode Cathode

14 L/S TEMP SENSE (ANODE) Low Side Temp sense Diode Anode

15 L/S COLLECTOR SENSE Low Side Collector Sense

MaterialsDBC Substrate: Al2O3 isolated substrate, basic isolation,

and copper on both sidesLead Frame: Copper with Tin electro−plating

Flammability InformationAll materials present in the power module meet UL

flammability rating class 94V−0

MODULE CHARACTERISTICS

Symbol Parameter Rating Unit

Tvj Continuous Operating Junction Temperature range −40 to 175 °C

TSTG Storage Temperature range −40 to 125 °C

VISO Isolation Voltage, DC, t = 1 s 4200 V

Creepage Terminal to Terminal 6.2 mm

Clearance Terminal to Terminal 3.4 mm

CTI Comparative tracking index >600 −

Min Typ Max

LsCE Stray Inductance 8 nH

RCC’+EE’ Module lead resistance, terminals − chip 0.15 m�

G Module weight 75 g

M M4 screws for module terminals 2.2 Nm

VE−Trac� Dual NVG800A75L4DSC

www.onsemi.com3

ABSOLUTE MAXIMUM RATINGS (TVJ = 25°C, Unless Otherwise Specified)

Symbol Parameter Rating Unit

IGBT

VCES Collector to Emitter Voltage 750 V

VGES Gate to Emitter Voltage ±20 V

ICN Implemented Collector Current 800 A

IC nom Continuous DC Collector Current, TvJmax = 175°C, TF = 65°C, ref.heatsink

550 (1) A

ICRM Pulsed Collector Current @ VGE = 15 V, tp = 1 ms 1600 A

Diode

VRRM Repetitive peak reverse voltage 750 V

IFN Implemented Forward Current 800 A

IF Continuous Forward Current, TvJmax = 175°C, TF = 65°C, ref. heatsink 420 (1) A

IFRM Repetitive Peak Forward Current, tp = 1 ms 1600 A

I2t value Surge current capability, VR = 0 V, tp = 10 ms, TvJ = 150°CTVJ = 175°C

2000018000

A2s

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionalityshould not be assumed, damage may occur and reliability may be affected.1. Verified by characterization, not by test.

THERMAL CHARACTERISTICS (Verified by characterization, not by test.)

Symbol Parameter Min Typ Max Unit

IGBT.Rth,J−C Effective Rth, Junction to Case (2) 0.05 0.07 °C/W

IGBT.Rth,J−F Effective Rth, Junction to Fluid, �TIM = 6 W/m−K, F = 660 N10 L/min, 65°C, 50/50 EGW, Ref. Heatsink

0.14 °C/W

Diode.Rth,J−C Effective Rth, Junction to Case (2) 0.08 0.10 °C/W

Diode.Rth,J−F Effective Rth, Junction to Fluid, �TIM = 6 W/m−K, F = 660 N10 L/min, 65°C, 50/50 EGW, Ref. Heatsink

0.21 °C/W

2. For the measurement point of case temperature (Tc), DBC discoloration, picker circle print is allowed, please refer to the VE−Trac Dualassembly guide for additional details about acceptable DBC surface finish.

VE−Trac� Dual NVG800A75L4DSC

www.onsemi.com4

CHARACTERISTICS OF IGBT (Tvj = 25°C, Unless Otherwise Specified)

Parameters Conditions Min Typ Max Unit

VCESAT Collector to Emitter Saturation Voltage(Terminal)

VGE = 15 V, IC = 600 A, TvJ = 25°C TvJ = 150°C TvJ = 175°C

VGE = 15 V, IC = 800 A, TvJ = 25°C TvJ = 150°C TvJ = 175°C

− 1.301.421.45

1.441.641.68

1.55 V

ICES Collector to Emitter Leakage Current

VGE = 0, VCE = 750 V TvJ = 25°C TvJ = 175°C

−−

−8

1−

mAmA

IGES Gate – Emitter Leakage Current VCE = 0, VGE = ± 20 V − − 400 nA

Vth Threshold Voltage VCE= VGE , IC = 500 mA 4.6 5.5 6.2 V

QG Total Gate Charge VGE= −8 to 15 V, VCE = 400 V − 1.9 − �C

RGint Internal gate resistance − 2 − �

Cies Input Capacitance VCE = 30 V, VGE = 0 V, f = 1 MHz − 48 − nF

Coes Output Capacitance VCE = 30 V, VGE = 0 V, f = 1 MHz − 1.37 − nF

Cres Reverse Transfer Capacitance VCE = 30 V, VGE = 0 V, f = 1 MHz − 0.15 − nF

Td.on Turn on delay, inductive load IC = 600 A, VCE = 400 V TvJ = 25°CVGE = +15/−8 V TvJ = 150°CRg.on = 4.7 � TvJ = 175°C

− 253283287

− ns

Tr Rise time, inductive load IC = 600 A, VCE = 400 V TvJ = 25°CVGE = +15/−8 V TvJ = 150°CRg.on = 4.7 � TvJ = 175°C

− 94112117

− ns

Td.off Turn off delay, inductive load IC = 600 A, VCE = 400 V TvJ = 25°CVGE = +15/−8 V TvJ = 150°CRg.off = 15 � TvJ = 175°C

− 760790800

− ns

Tf Fall time, inductive load IC= 600 A, VCE = 400 V TvJ = 25°CVGE = +15/−8 V TvJ = 150°CRg.off = 15 � TvJ = 175°C

− 95140153

− ns

EON Turn−On Switching Loss (includingdiode reverse recovery loss)

IC = 600 A, VCE = 400 V, VGE = +15/−8 V,Ls = 20 nH, Rg.on = 4,7 �di/dt (TvJ = 25°C) = 5.13 A/nsdi/dt (TvJ = 175°C) = 4.11 A/ns

TvJ = 25°CTvJ = 150°CTvJ = 175°C

−

22.4133.3036.35

− mJ

EOFF Turn−Off Switching Loss IC = 600 A, VCE = 400 V, VGE= +15/−8 V,Ls = 20 nH, Rg.off = 15 �dv/dt (TvJ = 25°C) = 2.81 V/nsdv/dt (TvJ = 175°C) = 2.11 V/ns

TvJ = 25°CTvJ = 150°CTvJ = 175°C

−

27.2237.1939.09

− mJ

ESC Minimum Short Circuit Energy Withstand

VGE = 15 V, VCC = 400 V TvJ = 25°CTvJ = 175°C

57.5

J

VE−Trac� Dual NVG800A75L4DSC

www.onsemi.com5

CHARACTERISTICS OF INVERSE DIODE (TVJ = 25°C, Unless Otherwise Specified)

Parameters Conditions Min Typ Max Unit

VF Diode Forward Voltage (Terminal) VGE = 0 V, IC = 600 A, TvJ = 25°CTvJ = 150°CTvJ = 175°C

VGE = 0 V, IC = 800 A, TvJ = 25°CTvJ = 150°CTvJ = 175°C

− 1.401.301.30

1.481.441.42

1.60 V

Err Reverse Recovery Energy IF = 600 A, VR = 400 V, VGE = −8 V, Rg.on = 4.7 � , −di/dt = 3.12 A/ns (175°C)

TvJ = 25°CTvJ = 150°CTvJ = 175°C

−

4.0910.9311.92

− mJ

QRR Recovered Charge IF = 600 A, VR = 400 V, VGE = −8 V,Rg.on = 4.7 � , −di/dt = 3.12 A/ns (175°C)

TvJ = 25°CTvJ = 150°CTvJ = 175°C

−

18.7044.4848.40

− �C

Irr Peak Reverse Recovery Current IF = 600 A, VR = 400 V, VGE = −8 V, Rg.on = 4.7 � , −di/dt = 3.12 A/ns (175°C)

TvJ = 25°CTvJ = 150°CTvJ = 175°C

−

248331337

− A

SENSOR CHARACTERISTICS (TVJ = 25°C, Unless Otherwise Specified)

Parameters Conditions Min Typ Max Unit

Tsense Temperature sense IF = 1 mA, TvJ = −40°CTvJ = 25°CTvJ = 150°CTvJ = 175°C

2.46(3)2.962.541.761.61

2.60(3)V

Isense Current sense Rshunt = 5 � IC = 1600 AIC = 800 AIC = 100 A

Rshunt = 20 � IC = 1600 AIC = 800 AIC = 100 A

37920043.0

64435194.0

mV

3. Measured at chip level

ORDERING INFORMATION

Part Number Device Marking Package Shipping

NVG800A75L4DSC N875DSC AHPM15−CEA(Pb−Free)

6 Units / Tube

VE−Trac� Dual NVG800A75L4DSC

www.onsemi.com6

TYPICAL CHARACTERISTICS

Figure 1. IGBT Output Characteristic Figure 2. IGBT Output Characteristic

VCE (V)

3.02.52.01.51.00.500

200

400

600

800

1000

1200

1400

Figure 3. IGBT Output Characteristic Figure 4. IGBT Output Characteristic

VCE (V)

432 5100

200

400

600

800

1000

1200

1400

Figure 5. Gate Charge Characteristic Figure 6. Capacitance Characteristic

QG (�C)

2.52.01.51.00.50−10

−5

0

5

10

15

I C (

A)

I C (

A)

VG

E (

V)

VGE = 15 V TJ = 25°C

TJ = 175°C

TJ = 150°C

VGE = 9 V

TJ = 25°C

QG

1600

VGE (V)

1210864200

200

400

600

800

1000

1200

1400

I C (

A)

VCE = 20 V

TJ = 25°CTJ = 175°C

TJ = 150°C

1600

VGE = 11 VVGE = 13 V

VGE = 15 V

VGE = 17 V1600

VCE (V)

432 5100

200

400

600

800

1000

1200

1400I C

(A

)

VGE = 9 V

TJ = 175°C

VGE = 11 V

VGE = 13 V

VGE = 15 V

VGE = 17 V1600

VCE = 400 V, IC = 600 A, Tvj = 25°C

VCE (V)

50040030020010000.1

1

10

100

C (

nF)

Cies

Coes

Cres

VE−Trac� Dual NVG800A75L4DSC

www.onsemi.com7

TYPICAL CHARACTERISTICS

Figure 7. EON vs. IC Figure 8. EON vs. RG

IC (A) RG (�)

8005003001000

10

20

30

40

50

60

201510500

10

30

40

60

80

Figure 9. EOFF vs. IC Figure 10. EOFF vs. RG

RG (�)

30252015100

5

10

25

30

35

40

50

Figure 11. IGBT Switching Times vs. IC, TVJ = 25�C

Figure 12. IGBT Switching Times vs. IC, TVJ = 175�C

IC (A)

8004003002001001

10

100

10K

E (

mJ)

E (

mJ)

E (

mJ)

TIM

E (

nS)

VGE = +15/−8 V,RGon = 4.7 �,RGoff = 15 �,VCE = 400 V Eon, TJ = 175°C

Eon, TJ = 150°C

Eon, TJ = 25°C VGE = +15/−8 V,IC = 600 A, VCE = 400 V

VGE = +15/−8 V,IC = 600 AVCE = 400 V

15

200 400 700600

70

20

50

70Eon, TJ = 175°C

Eon, TJ = 150°C

Eon, TJ = 25°C

IC (A)

8005003001000

10

20

30

40

50

60

E (

mJ)

VGE = +15/−8 V,RGon = 4.7 �,RGoff = 15 �,VCE = 400 V

Eoff, TJ = 175°C

Eoff, TJ = 150°C

Eoff, TJ = 25°C

200 400 700600

70

Eoff, TJ = 175°C

Eoff, TJ = 25°C

Eoff, TJ = 150°C

20

45

VGE = +15/−8 V,RGon = 4.7 �,RGoff = 15 �,VCE = 400 V

td(off)

td(on)

tf

tr

500 600 700

1K

IC (A)

8004003002001001

10

100

10K

TIM

E (

nS)

VGE = +15/−8 V,RGon = 4.7 �,RGoff = 15 �,VCE = 400 V

td(off)

td(on)

tf

tr

500 600 700

1K

VE−Trac� Dual NVG800A75L4DSC

www.onsemi.com8

TYPICAL CHARACTERISTICS

Figure 13. Reverse Bias Safe Operating Area Figure 14. IGBT Transient Thermal Impedance

VCE (V)

80060040020000

400

600

1000

1200

1600

1800

Figure 15. Diode Forward Characteristic Figure 16. Diode Switching Losses vs. IF

IF (A)

8006004003001000

14

18

Figure 17. Diode Switching Losses vs. RG Figure 18. Diode Transient Thermal Impedance

RG (�)

1510500

5

10

15

25

I C (

A)

Err

(m

J)

Err

(m

J)

VGE = +15/−8 V,RGoff = 15 �, Tvj = 150°C

Module

20

TIME (s)

1010.10.010.00010.001

0.01

0.1

1

Zth

(K

/W)

Zth,j−f: IGBT

i: 1 2 3 4Rth [K/W]: 0.019 0.089 0.005 0.028�th [s]: 0.002 0.457 0.001 0.050

10 L/Min, Tf = 65°C, 50/50 EGW, Ref. Cooler Heatsink

1400

800

200

Chip

0.001

VF (V)

2.01.51.00.500

400

600

1000

1200

1600

I F (

A)

1400

800

200TJ = 25°CTJ = 175°C

TJ = 150°C

RGon = 4.7 � VCE = 400 V

Err, TJ = 175°C

Err, TJ = 150°C

Err, TJ = 25°C

200 500 700

16

8

12

10

2

6

4

IF = 600 A VCE = 400 V

Err, TJ = 175°C

Err, TJ = 150°C

Err, TJ = 25°C

TIME (s)

1010.10.010.00010.001

0.01

0.1

1

Zth

(K

/W)

Zth,j−f: Diode

i: 1 2 3 4Rth [K/W]: 0.034 0.116 0.008 0.051�th [s]: 0.002 0.410 0.001 0.041

10 L/Min, Tf = 65°C, 50/50 EGW, Ref. Cooler Heatsink

0.001

VE−Trac� Dual NVG800A75L4DSC

www.onsemi.com9

TYPICAL CHARACTERISTICS

Figure 19. Temperature Sensor Characteristic Figure 20. Current Sensor Characteristic

TEMPERATURE (°C)

1601106010−400

1.0

2.0

3.0

3.5

Figure 21. Current Sensor Characteristic Figure 22. Maximum Allowed VCE

Tvj (°C)

2001408020−40650

750

775

TS

ense

(V

)

VC

ES (

V)

IC (A)

1600120080000

100

300

500

I Sen

se (

mV

)

2.5

1.5

0.5

400

IC (A)

1600120080040000

200

300

500

700

900

I Sen

se (

mV

)

800

400

100

25°C

175°C

150°C

ICES = 1 mA,Tvj ≤ 25°C,ICES = 30 mA,Tvj ≤ 25°C

725

675

700

Verified by characteriza-tion / design, not by test.

600

RShunt = 20 �

y = 0.367x+57.267

y = −0.0063x+2.7085 y = 0.2243x+20.179

Ibias = 1 mA

25°C

175°C

150°CRShunt = 5 �

200

400

VE−Trac is a trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.

AHPM15−CEACASE 100DD

ISSUE ADATE 09 OCT 2019

GENERICMARKING DIAGRAM* ZZZ = Assembly Lot Code

AT = Assembly & Test Site CodeY = YearWW = Work WeekXXXX = Specific Device CodeNNN = Serial Number

*This information is generic. Please refer todevice data sheet for actual part marking.Pb−Free indicator, “G” or microdot “�”, mayor may not be present. Some products maynot follow the Generic Marking.

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regardingthe suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specificallydisclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor therights of others.

98AON86580GDOCUMENT NUMBER:

DESCRIPTION:

Electronic versions are uncontrolled except when accessed directly from the Document Repository.Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

PAGE 1 OF 1AHPM15−CEA

© Semiconductor Components Industries, LLC, 2018 www.onsemi.com

www.onsemi.com1

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patentcoverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liabilityarising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/orspecifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customerapplication by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are notdesigned, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classificationin a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorizedapplication, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, andexpenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if suchclaim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. Thisliterature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATIONTECHNICAL SUPPORTNorth American Technical Support:Voice Mail: 1 800−282−9855 Toll Free USA/CanadaPhone: 011 421 33 790 2910

LITERATURE FULFILLMENT:Email Requests to: orderlit@onsemi.com

ON Semiconductor Website: www.onsemi.com

Europe, Middle East and Africa Technical Support:Phone: 00421 33 790 2910For additional information, please contact your local Sales Representative

◊