NVG450A120L5DSC - Automotive 1200 V, 450 A Dual Side ...
Transcript of NVG450A120L5DSC - Automotive 1200 V, 450 A Dual Side ...
© Semiconductor Components Industries, LLC, 2021
July, 2021 − Rev. 01 Publication Order Number:
NVG450A120L5DSC/D
Automotive 1200 V, 450 ADual Side CoolingHalf-Bridge Power Module
VE-Trac� DualNVG450A120L5DSC
Product DescriptionThe NVG450A120L5DSC is a member of the VE−Trac Dual power
module family with dual side cooling and compact footprints forHybrid (HEV) and Electric Vehicle (EV) traction inverter application.
The module consists of two latest 1200 V Ultra Field Stop (UFS)IGBTs in a half−bridge configuration. The chipset utilizes the provenTrench Ultra Field Stop IGBT technology in providing high currentdensity while offering robust short circuit protection and increasedblocking voltage. Additionally, UFS IGBT and copacked soft diodedeliver a low power loss operation and soft switching simultaneously,which helps to improve overall system efficiency in HEV/EV tractionapplications.
Features
• Dual−Side Cooling
• Integrated Chip Level Temperature & Current Sensor
• Tvj max = 175°C
• Low Stray Inductance
• Low Conduction and Switching Losses
• Automotive Grade
• 4.2 kV Isolated DBC Substrate
• This is a Pb−Free Device
Typical Applications
• Hybrid and Electric Vehicle Traction Inverter
• High Power DC−DC Converter
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AHPM15−CEACASE 100DD
MARKING DIAGRAM
See detailed ordering and shipping information on page 9 ofthis data sheet.
ORDERING INFORMATION
ZZZ = Assembly Lot CodeAT = Assembly & Test Site CodeY = YearWW = Work WeekXXXX = Specific Device CodeNNN = Serial Number
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PIN DESCRIPTION
Pin No. Pin Description Pin Arrangement
1 N Low Side Emitter
2 P High Side Collector
3 H/S COLLECTOR SENSE High Side Collector Sense
4 H/S CURRENT SENSE High Side Current Sense
5 H/S EMITTER SENSE High Side Emitter Sense
6 H/S GATE High Side Gate
7 H/S TEMP SENSE (CATHODE) High Side Temp sense Diode Cathode
8 H/S TEMP SENSE (ANODE) High Side Temp sense Diode Anode
9 ~ Phase Output
10 L/S CURRENT SENSE Low Side Current Sense
11 L/S EMITTER SENSE Low Side Emitter Sense
12 L/S GATE Low Side Gate
13 L/S TEMP SENSE (CATHODE) Low Side Temp sense Diode Cathode
14 L/S TEMP SENSE (ANODE) Low Side Temp sense Diode Anode
15 L/S COLLECTOR SENSE Low Side Collector Sense
DBC SubstrateAl2O3 isolated substrate, basic isolation, and copper on both sides
Lead frameCopper, with tin electro−plating
Flammability InformationAll Power Module packaging materials meet UL flammability rating class 94V−0
MODULE CHARACTERISTICS
Symbol Parameter Rating Unit
Tvj Continuous Operating Junction Temperature Range −40 to 150 °C
Tvj.op Continuous Operating Junction Temperature Under Switching Conditions −40 to 175 °C
TSTG Storage Temperature Range −40 to 125 °C
VISO Isolation Voltage, DC, t = 1 s 4200 V
Creepage Terminal to HeatsinkTerminal to Terminal
6.0 mm
Clearance Terminal to HeatsinkTerminal to Terminal
3.2 mm
CTI Comparative Tracking Index >600
Min. Typ. Max.
LsCE Stray Inductance − − 8 nH
RCC’+EE’ Module Lead Resistance, Terminals − Chip − − 0.15 m�
G Module Weight − − 72 g
M M4 Screws for Module Terminals − − 2.2 Nm
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ABSOLUTE MAXIMUM RATINGS (Tvj = 25°C, unless otherwise specified)
Symbol Parameter Rating Unit
IGBT
VCES Collector to Emitter Voltage 1200 V
VGES Gate to Emitter Voltage −15/+20 V
ICN Implemented Collector Current 450 A
IC nom Continuous DC Collector Current, Tvjmax = 175°C, TF = 65°C, Ref. Heatsink 410 (Note 1) A
ICRM Pulsed Collector Current @ VGE = 15 V, tp = 1 ms 900 A
DIODE
VRRM Repetitive Peak Reverse Voltage 1200 V
IFN Implemented Forward Current 450 A
IF Continuous Forward Current, Tvjmax = 175°C, TF = 65°C, Ref. Heatsink 360 (Note 1) A
IFRM Repetitive Peak Forward Current, tp = 1 ms 900 A
I2t value VR = 0 V, tp = 10 ms, TvJ = 150°CTVJ = 175°C
1440012960
A2s
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionalityshould not be assumed, damage may occur and reliability may be affected.1. Verified by characterization, not test.
THERMAL CHARACTERISTICS (Verified by characterization, not test)
Symbol Parameter Min. Typ. Max. Unit
IGBT.Rth,J−C Effective Rth, Junction to Case (Note 2) − 0.06 0.08 °C/W
IGBT.Rth,J−F Effective Rth, Junction to Fluid, �TIM = 6 W/m−K, F = 660 N10 L/min, 65°C, 50/50 EGW, Ref. Heatsink
− 0.15 − °C/W
Diode.Rth,J−C Effective Rth, Junction to Case (Note 2) − 0.08 0.10 °C/W
Diode.Rth,J−F Effective Rth, Junction to Fluid, �TIM = 6 W/m−K, F = 660 N10 L/min, 65°C, 50/50 EGW, Ref. Heatsink
− 0.21 − °C/W
2. For the measurement point of case temperature (Tc), DBC discoloration, picker circle print is allowed, please refer to the VE−Trac Dualassembly guide for additional details about acceptable DBC surface finish.
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CHARACTERISTICS OF IGBT (Tvj = 25°C, unless otherwise specified)
Parameters Conditions Min Typ Max unit
VCESAT Collector to Emitter Saturation Voltage(Terminal)
VGE = 15 V, IC = 300 A, Tvj = 25°CTvj = 150°CTvj = 175°C
VGE = 15 V, IC = 450 A, Tvj = 25°CTvj = 150°CTvj = 175°C
−−−
−−−
1.381.501.53
1.591.821.87
1.6−−
−−−
V
ICES Collector to Emitter Leakage Current VGE = 0 V, VCE = 1200 V Tvj = 25°CTvj = 175°C
−−
−7
1−
mA
IGES Gate – Emitter Leakage Current VCE = 0 V, VGE = +20 V/−15 V − − ±400 nA
Vth Threshold Voltage VCE = VGE , IC = 500 mA 5.8 6.8 7.6 V
QG Total Gate Charge VGE = −8 to 15 V, VCE = 600 V − 1.45 − �C
RGint Internal Gate Resistance − N/A − �
Cies Input Capacitance VCE = 30 V, VGE = 0 V, f = 1 MHz − 61 − nF
Coes Output Capacitance VCE = 30 V, VGE = 0 V, f = 1 MHz − 1.48 − nF
Cres Reverse Transfer Capacitance VCE = 30 V, VGE = 0 V, f = 1 MHz − 0.69 − nF
Td.on Turn On Delay, Inductive Load IC = 300 A, VCE = 600 V Tvj = 25°CVGE = +15/−8 V Tvj = 150°CRg.on = 3 � Tvj = 175°C
−−−
128121118
−−−
ns
Tr Rise Time, Inductive Load IC = 300 A, VCE=600 V Tvj = 25°CVGE = +15/−8 V Tvj = 150°CRg.on = 3 � Tvj = 175°C
−−−
596668
−−−
ns
Td.off Turn Off Delay, Inductive Load IC = 300 A, VCE = 600 V Tvj = 25°CVGE = +15/−8 V Tvj = 150°CRg.off = 5 � Tvj = 175°C
−−−
106165184
−−−
ns
Tf Fall Time, Inductive Load IC = 300 A, VCE=600 V Tvj = 25°CVGE = +15/−8 V Tvj = 150°CRg.off = 5 � Tvj = 175°C
−−−
103250281
−−−
ns
EON Turn−On Switching Loss (IncludingDiode Reverse Recovery Loss)
IC = 300 A, VCE = 600 V Tvj = 25°CVGE = +15/−8 V Tvj = 150°CRg.on = 3 � Tvj = 175°CLs = 25 nHdi/dt (Tvj=25°C) = 4.06 A/nsdi/dt (Tvj=175°C) = 3.95 A/ns
−−−
18.4728.9731.24
−−−
mJ
EOFF Turn−Off Switching Loss IC=300A, VCE=600 V Tvj = 25°CVGE=+15/−8 V Tvj = 150°CRg.off=5 � Tvj = 175°CLs=25 nHdv/dt (Tvj=25°C) = 4.15 V/nsdv/dt (Tvj=175°C) = 3.21 V/ns
−−−
20.3736.0639.10
−−−
mJ
Esc Minimum Short Circuit Energy Withstand VGE = 15 V, VCC = 600 VTvj = 25°CTvj = 175°C
168.8
−−
−−
J
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CHARACTERISTICS OF INVERSE DIODE (Tvj = 25°C, unless otherwise specified)
Parameters Conditions Min Typ Max unit
VF Diode Forward Voltage (Terminal) VGE = 0 V, IC = 300 A, Tvj = 25°CTvj = 150°CTvj = 175°C
VGE = 0 V, IC = 450 A, Tvj = 25°CTvj = 150°CTvj = 175°C
−−−
−−−
1.581.561.54
1.801.811.78
1.82−−
−−−
V
Err Reverse Recovery Energy VR = 600 V, IF = 300 A, Tvj = 25°CRGON = 3 �, Tvj = 150°C−di/dt = 3.95 A/ns (175°C) Tvj = 175°CVGE = −8 V
−−−
10.3922.5224.95
−−−
mJ
QRR Recovered Charge VR = 600 V, IF = 300 A, Tvj = 25°CRGON = 3 �, Tvj = 150°C−di/dt = 395 A/ns (175°C) Tvj = 150°CVGE = −8 V
−−−
255359
−−−
�C
Irr Peak Reverse Recovery Current VR = 600 V, IF = 300 A, Tvj = 25°CRGON = 3 �, Tvj = 150°C−di/dt = 3.95 A/ns (175°C) Tvj = 175°CVGE = −8 V
−−−
250332343
−−−
A
SENSOR CHARACTERISTICS (Tvj = 25°C, unless otherwise specified)
Parameters Conditions Min Typ Max unit
Tsense Temperature Sense IF = 250 �A, Tvj = −40°CTvj = 25°C
Tvj = 150°CTvj = 175°C
−2.95
(Note 3)−−
3.403.01
2.272.08
−3.086
(Note 3)−−
V
Isense Current Sense Rshunt = 10 �, IC = 600 AIC = 300 AIC = 200 A
Rshunt = 20 �, IC = 600 AIC = 300 AIC = 200 A
−−−
−−−
392254209
566377314
−−−
−−−
mV
3. Measured at final test.
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VCE (V)
C (
nF)
0,10
1,00
10,00
100,00
1000,00
Cies
Coes
Cres
VGE = 0 V, Tvj = 25°C, f = 1 MHz
0 100 200 300 400 500 600
VCE (V)
I C (A
)
I C (A
)
I C (A
)
VGE (V)
VCE (V)
Figure 1. IGBT Output Characteristic Figure 2. IGBT Transfer Characteristic
Figure 3. IGBT Output Characteristic
I C (A
)
VCE (V)
Figure 4. IGBT Output Characteristic
0
100
200
300
400
500
600
700
800
900
25°C
0 0,5 1 1,5 2 2,5 3
Vge = 15 V0
100
200
300
400
500
600
700
800
900VCE = 20 V
2 4 6 8 10 12 14
0
100
200
300
400
500
600
700
800
900
0 1 2 3 4 5 6
Vge = 9 V
Vge = 11 V
Vge = 13 V
Vge = 15 VVge = 17 V
0
100
200
300
400
500
600
700
800
900
0 1 2 3 4 5 6
Tj = 25°C Tj = 175°C
VG
E (
V)
QG (�C)
Qg
Figure 5. Gate Charge Characteristic Figure 6. Capacitance Characteristic
−10
−5
0
5
10
15
0 1 2 3
VCE = 600 V, IC = 300 A, Tvj = 25°C
150°C
175°C
25°C
150°C175°C
Vge = 9 V
Vge = 11 V
Vge = 13 V
Vge = 15 V
Vge = 17 V
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10
15
20
25
30
35
40
45
50
0
5
20
25
30
35
40
45
50E
(m
J)
Eon
(m
J)
IC (A) Rgon (�)
Figure 7. IGBT Turn−on Losses vs. IC Figure 8. IGBT Turn−on Losses vs. Rgon
VGE = +15/−8 V, RGon = 3 �, VCE = 600 V
100 200 300 400
VGE = +15/−8 V, IC = 300 A, VCE = 600 V
10
15
0
5
20
25
30
35
40
45
50
10
15
1,5 2,5 3,5 4,5 5,5 6,5
IC (A)
Figure 9. IGBT Turn−off Losses vs. IC
E (
mJ)
Rgoff (�)
Eof
f (m
J)
Tim
e (n
s)
Tim
e (n
s)
IC (A) IC (A)
Figure 10. IGBT Turn−off Losses vs. Rgoff
Figure 11. IGBT Switching Times vs. IC, Tvj = 25�C Figure 12. IGBT Switching Times vs. IC, Tvj = 175�C
VGE = +15/−8 V, IC = 300 A, VCE = 600 V0
10
20
30
40
50
60
VGE = +15/−8 V, RGoff = 5 �, VCE = 600 V
100 200 300 400 5 10 15 20
1
10
100
1000
10000
100 200 300 400
VGE = +15/−8 V, RGon = 3 �, RGoff = 5 �, VCE = 600 V
Td.on
Tr, Tj
Td.off
Tf, Tj
VGE = +15/−8 V, RGon = 3 �, RGoff = 5 �, VCE = 600 V
1
10
100
1000
10000
100 200 300 400
Td.on, TjTr, Tj
Td.off, Tj
Tf, Tj
150°C
175°C
25°C
150°C
175°C
25°C
150°C
175°C
25°C
150°C
175°C
25°C
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0
5
10
15
20
25
30
0,001
0,01
0,1
1
VCE (V)
Figure 13. Reverse Bias Safe Operating Area
I C (A
)
Time (s)
Zth
(K
/W)
I F (A
)
Err
(m
J)
VF (V) IF (A)
Figure 14. IGBT Transient Thermal Impedance
Figure 15. Diode Forward Characteristics Figure 16. Diode Switching Losses vs. IF
10 L/min, Tf = 65°C, 50/50 EGW, Ref. Heatsink
Zth,j−f: IGBT
Figure 17. Diode Reverse Recovery Losses vs. Rgon
Rgon (�)
Err
(m
J)
VGE = +15/−8 V, IC = 300 A, VCE = 600 V
Time (s)
Zth
(K
/W)
Figure 18. Diode Transient Thermal Impedance
0
100
200
300
400
500
600
700
800
900
VGE = +15/−8 V, RGoff = 5 �, Tvj = 150°C
ModuleChip
0 400 800 1200 0,0001 0,001 0,01 0,1 1 10
0
100
200
300
400
500
600
700
800
900
0,2 0,6 1 1,4 1,8 2,2 2,60
5
10
15
20
25
30
35
RGon = 3 �, VCE = 600 V
100 200 300 400
0,0001 0,001 0,01 0,1 1 101,5 2,5 3,5 4,5 5,5 6,50,001
0,01
0,1
1
10 L/min, Tf = 65°C, 50/50 EGW, Ref. Heatsink
Zth,j−f: Diode
25°C
150°C175°C
25°C
150°C
175°C
25°C
150°C
175°C
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800
900
1000
1100
1200
1300
1400
0
0,5
1
1,5
2
2,5
3
3,5
4
−40 10 60 110
TS
EN
SE (
V)
I SE
NS
E (
mV
)
Temperature (°C) IC (A)
Figure 19. Temperature Sensor Characteristics Figure 20. Current Sensor Characteristics
y = −0,006x + 3,1867
Ibias = 250 �A
IC (A)
Figure 21. Current Sensor Characteristics
I SE
NS
E (
mV
)
T (°C)
VC
ES (
V)
Figure 22. Maximum Allowed Vce
ICES = 1 mA, Tvj ≤ 25°C; ICES = 30 mA, Tvj ≥ 25°C
Verified by characterization/design,not by test.
160
100
200
300
400
500
600
700
00 200 400 600
−40°C
RShunt = 10 �
y = −0,4587x + 117,25
100
200
300
400
500
600
700
800
900
1000
00 200 400 600
RShunt = 20 �
y = −0,6311x + 188,28
−40 0 40 80 120 160 200
25°C
150°C175°C
−40°C25°C
150°C175°C
ORDERING INFORMATION
Device Device Marking Package Shipping
NVG450A120L5DSC N412DSC AHPM15−CEA(Pb−Free)
6 Unit / Tube
VE−Trac is a trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
AHPM15−CEACASE 100DD
ISSUE ADATE 09 OCT 2019
GENERICMARKING DIAGRAM* ZZZ = Assembly Lot Code
AT = Assembly & Test Site CodeY = YearWW = Work WeekXXXX = Specific Device CodeNNN = Serial Number
*This information is generic. Please refer todevice data sheet for actual part marking.Pb−Free indicator, “G” or microdot “�”, mayor may not be present. Some products maynot follow the Generic Marking.
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
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