International Exhibition and Conferencefor Power Electronics, Intelligent Motion,Renewable Energy and Energy Management

Nuremberg, 7 – 9 May 2019pcim-europe.com

7 Seminars

10 Tutorials

Over 300 presentations

Conference Program

Contents

Board 04

Conference Program at a Glance 06

Seminars 08

Tutorials 12

Awards 18

Keynotes 20

Tuesday Oral Session 22

Tuesday Poster / Dialogue Session 26

Wednesday Oral Sessions 30

Wednesday Poster / Dialogue Session 34

Thursday Oral Session 38

Industry Forum 42

E-Mobility Forum 43

List of Exhibitors 44

Registration Information 46

General Information 47

Room Plan 48

PCIM Worldwide 49

Board

Advisory Board

Francisco Javier Azcondo, University of Cantabria, E

Mark M. Bakran, University of Bayreuth, D

Pavol Bauer, Delft University of Technology, NL

Werner Berns, Texas Instruments EMEA Sales, D

Frede Blaabjerg, Aalborg University, DK

Serge Bontemps, Microsemi PMP Europe, F

Bruce Carsten, Bruce Carsten Associates, USA

Daniel Chatroux, CEA-LITEN, F

Hilmar Darrelmann, Darrelmann + Partner Ingenieure, D

Enrique J. Dede, University of Valencia, E

Hans-Günter Eckel, University of Rostock, D

Hans Ertl, Vienna University of Technology, A

J. A. Ferreira, Delft University of Technology, NL

Petar J. Grbovic, University of Innsbruck, D

Steffan Hansen, Siemens Wind Power, DK

Marcelo Lobo Heldwein, Federal University of Santa Catarinar, BR

Marc Hiller, Karlsruhe Institute of Technology, D

Klaus F. Hoffmann, Helmut-Schmidt-University, D

Edward Hopper, MACCON, D

Ionel Dan Jitaru, Rompower, USA

Nando Kaminski, University of Bremen, D

Peter Kanschat, Infineon Technologies, D

Ulrich Kirchenberger, STMicroelectronics, D

Philip C. Kjaer, Vestas Wind Systems, DK

Christopher Kocon, Texas Instruments, USA

Jacques Laeuffer, Dtalents, F

Stéphane Lefebvre, SATIE, F

Andreas Lindemann, Otto-von-Guericke-University Magdeburg, D

Stefan Linder, Alpiq, CH

Marco Liserre, Christian-Albrechts-University of Kiel, D

Martin März, Fraunhofer IISB, D

Gourab Majumdar, Mitsubishi Electric, J

Klaus Marahrens, SEW-EURODRIVE, D

Elison Matioli, POWERlab, EPFL, CH

Mike Meinhardt, SMA Solar Technology, D

Thomas Neyer, ON Semiconductor, D

Yasuyuki Nishida, Chiba Institute of Technology, J

Geraldo Nojima, Eaton Corporation, USA

Yasuhiro Okuma, Fuji Electric, J

Frank Osterwald, Danfoss Silicon Power, D

Masahito Otsuki, Fuji Electric, J

Robert J. Pasterczyk, Schneider Electric, F

Gianmario Pellegrino, Politecnico di Torino, I

Munaf Rahimo, MTAL, CH

Chris Rexer, ON Semiconductor, USA

Katsuaki Saito, Hitachi Power Semiconductor Device, J

Achim Scharf, Techmedia International, D

Hubert Schierling, Siemens, D

Manfred Schlenk, Dr. Schlenk-Consulting, D

Manfred Schrödl, Vienna University of Technology, A

Walter Schumacher, Braunschweig University of Technology, D

Toshihisa Shimizu, Tokyo Metropolitan University, J

Elmar Stachorra, KoCoS Engineering, D

Peter Steimer, ABB Switzerland, CH

Bernhard Strzalkowski, Analog Devices, D

Wolfram Teppan, LEM Intellectual Property SA, CH

Giuseppe Tomasso, University of Cassino and South Lazio, I

Yoshiyuki Uchida, Japan Fine Ceramics, J

Peter Wallmeier, Delta Energy Systems, D

Peter Zacharias, University of Kassel, D

Honorary Board

Jean-Paul Beaudet, Schneider Electric, F

Helmut Knöll, University for Applied Sciences Würzburg-Schweinfurt, D

Jean-Marie Peter, F

Gerhard Pfaff, University of Erlangen, D

Alfred Rufer, EPFL, CH

04 | 05

Silvio ColombiABB, CH

Josef LutzChemnitz University of Technology, D

Philippe LadouxUniversity of Toulouse, F

Drazen DujicPower Electronics Laboratory, EPFL, CH

Eric FavreIMI Precision Engineering, CH

Jose Mario PacasUniversity of Siegen, D

Uwe ScheuermannSemikron Elektronik, D

Johann Walter KolarETH Zürich, CH

General Conference Director PCIM EuropeLeo LorenzECPE, D

Board of Directors

06 | 07

Tuesday, 7 May 201909:00 Room Brüssel 1

Conference Opening and Award Ceremony

09:45 Room Brüssel 1Keynote »Next Generation of Power Supplies«

10:30 Coffee Break

11:00 Room Brüssel 1Special Session:Technologies for DC Grids

Room Brüssel 2Advanced SiC MOSFET

Room München 1DC-DC Hard and Soft Switched Converters I

Room München 2Thermal Management

Room MailandMagnetic Components

12:40 Lunch Break

12:55-13:25 Room Mailand»Meet the Speaker« Q&A Session with the keynote speaker Fred Lee, Virginia Tech

14:00 Room Brüssel 1Special Session: Smart Functions in Power Electronics

Room Brüssel 2Advanced IGBTs

Room München 1DC-DC Hard and Soft Switched Converters II

Room München 2Advanced Device Technologies

Room MailandControl Techniques and Electrical Drives

15:15-17:15 Foyer Entrance NCC MittePoster / Dialogue Session

17:30 Welcome Party

Wednesday, 8 May 201908:45 Room Brüssel 1

Keynote »The Age of Optimization in Power Electronics«

09:30 Coffee Break

10:00 Room Brüssel 1Automotive Power Converters

Room Brüssel 2Special Session:Safety in Motion

Room München 1High Voltage SiC

Room München 2New Packages

Room MailandIntelligentGate Drivers

11:40 Lunch Break

11:55-12:25 Room Brüssel 1»Meet the Speaker« Q&A Session with the keynote speaker Ki-Bum Park, ABB Switzerland

13:30 Room Brüssel 1Automotive DC-DC Converters

Room Brüssel 2High PowerConverters

Room München 1GaN SystemIntegration

Room München 2Reliability

Room MailandCurrent Sensing

15:15-17:15 Foyer Entrance NCC MittePoster / Dialogue Session

Conference Program at a Glance

Sunday, 5 May 2019 – Monday, 6 May 2019Hotel Arvena Park, Görlitzer Str. 51, D-90473 NurembergSeminars and Tutorials

Thursday, 9 May 201908:45 Room Brüssel 1

Keynote »GaN and Industry 4.0 – A Small Change that is Revolutionizing the Industry«

09:30 Coffee Break

10:00 Room Brüssel 1High Voltage IGBTs

Room München 1Special Session:Smart Transformers

Room München 2Control Methods forPower Converters

Room MailandPower Quality and EMC

12:05 Lunch Break

12:20-12:50 Room Mailand»Meet the Speaker« Q&A Session with the keynote speaker Jim Witham, GaN Systems

14:00 Room Brüssel 1GaN Devices

Room München 1AC-DC and DC-ACConverters

Room München 2Chip Bond Technologies

Room MailandPower Modules Design

As of March 2019 / subject to change without notice

All seminar attendees will receive all seminar documentations. The same applies for the

tutorial documentations.

Seminars Sunday, 5 May 2019, 14:00 – 17:30Venue: Arvena Park Hotel Nuremberg, Görlitzer Str. 51, 90473 Nuremberg

08 | 09

Seminar 1

Electromagnetic Compatibility (EMC) of Power ElectronicsJacques Laeuffer, Dtalents, F

About the instructorJacques Laeuffer has a 35 years’ experience of R&D in Power Electronics, inside international companies, with powers from 10 W up to 10 MW, including HF resonant converters and high voltage transformers, electric machines and inverters for hybrid cars. He is inventor of 27 granted patents, and author of over 80 technical papers. As a Consultant, his activities extend from one day consulting to several months’ projects, including choices and design of conversion topologies, power components and electric machines sizing, EMC, digital control, industrial property, field support. Affiliated Professor at Ensta-ParisTech, he teaches also at CentraleSupelec, France, and for inter and intra companies trainings, on former topics and also on mechatronics, cars powertrains, or »Experience and Innovation«.

ContentFast semiconductors commutations are required for efficiency of high frequency (HF) power converters and drives, and wide bandwidth of their control electronics. But sudden front edges generate perturbations in control circuits, and on public utility power networks. The seminar shows step by step how perturbations propagate, as Differential Mode (DM) and Common Mode (CM), how to reduce noisy oscillations from the beginning, how to design and implement on PCB robust control electronics, how to calculate and optimize DM and CM filters for EMC standards compliance, how to avoid expensive shielding and improve reliability. Number of practical designs are analytically calculated, showing orders of magnitudes for a wide range of powers and frequencies.

DM in Control Resistive, inductive and capacitive coupling reductions Layout design of PCB. Ground planes benefits

DM in Power and Filters Design Calculation of disturbances from transistors and diodes Measurement by L.I.S.N. and spectrum analyzer DM Filter calculation, Design of L, C&R components Evaluation of perturbations at some MHz. Reduction means

CM in Control Between PCBs and between cabinets. Electric and Optics CM parasitic coupling calculation and reduction Wiring and Layout: »Star« for Analog; »Net« for Digital

CM in Power and Filters Design Calculation of disturbances from CM capacitances Heatsinks, transformers, stators and screens. Measurement CM Filter calculation: capacitor and inductance design

EMC Commutation Control of Power Semiconductors Tuning as a trade-off between switching losses and EMC Control of di / dt and dv / dt front edges by gate drive Gate drive circuit designs for MOS and IGBT’s

Radiations Reduction Examples of emissions of Electric and Magnetic Fields Neighbor Field and Far Field identification. Examples Fields measurements by probes and reduction Wiring, grounding, shielding, packaging

Who should attend?This course is targeted towards engineers, students or project managers, who design, specify, simulate, tune, or integrate high frequency power supplies, converters, EMC filters, electric machines, and intelligent motion, for high efficiency conversion, low global cost and high reliability.

Seminar 2

Power Inverter Technology for Industrial Induction HeatingEnrique J. Dede, José Jordan, University of Valencia, E

About the instructorsFull Professor in Power Electronics (University of Valencia) and Chairman at Smart Induction Converter Technologies S.L. He has more than 30 years’ experience in the field of Power Electronics and particularly in the design of high frequency inverters for induction heating holding several international patents.

Associate Professor in Power Electronics at the University of Valencia and Vice-Chairman at the company Smart Induction Converter Technologies S.L with a wide experience over 25 years in the field of high frequency induction heating converter design, holding several patents on the subject.

ContentThe aim of the seminar is to highlight the present technology in converter design for induction heating applications from the fundamentals to the state-of the art, covering the following subjects:

1. The Heating Inductor2. The Heating Resonat Tank3. Basics on Power Switches in Resonant Inverters and its Classification4. Commutation Cells and Parasitic Elements5. Voltage-fed Resonant Inverters6. Current-fed Resonant Inverters

Who should attend?

- R&D Power Electronics Engineers

- Induction Heating Power Supplies Design Engineers

Seminar 3

Ceramic Capacitors: Characterization and Use as Control ElementsShmuel Ben-Yaakov, Ben Gurion University, IL

About the instructorShmuel (Sam) Ben-Yaakov received the BSc degree in Electrical Engineering from the Technion, Haifa Israel, in 1961 and the MS and PhD degrees in Engineering from the UCLA, in 1967 and 1970 respectively. He is a Professor Emeritus of the Department of Electrical and Computer Engineering, Ben-Gurion University of the Negev, Beer-Sheva, Israel. He published more than 300 papers, was granted more than 30 patents and presented seminars and tutorials in leading conferences. During the period 1985 to 1989 he served as the Chairman of the Department of Electrical and Computer Engineering of Ben-Gurion University. In 1984 he established the Power Electronics Laboratory of Ben-Gurion University (PEL-BGU) that has been recognized worldwide as a center of knowledge and excellence in Analog and Power Electronics. Prof. Ben-Yaakov started and now cultivates the YouTube’s »Sam Ben-Yaakov« channel in which he is posting educational videos. The current research interests of Prof. Ben-Yaakov include power electronics, circuits and systems, electronic instrumentation and engineering education. For over 45 years Professor Ben-Yaakov has been serving as a consultant to commercial companies and governmental agencies in the areas of analog and power electronics and was an entrepreneur and founder of start-up companies. Prof. Sam Ben-Yaakov is a Life Fellow of IEEE.

ContentThis seminar covers the subject of ferroelectric ceramic capacitors from two angles: (a) characterization, modeling, and simulation of the ferroelectric capacitors, and (b) novel applications of these voltage dependent capacitors as control elements. The seminar material is based on recently published papers by the instructor and co-workers as well as yet unpublished material. It will focus on the voltage dependent capacitor’s ability to change the resonant frequency of resonant networks. This enables the design of resonant converters that run at constant frequency, help to better tune WPT systems and facilitates both frequency and capacitance control to enlarge the envelop of performance of such systems.

The subjects covered in the seminar include: Classifications of ceramic capacitor Class I, II and III ceramic capacitors, ferroelectric capacitors, packages Specifications of ceramic capacitors Voltage and current ratings, ESR, voltage dependence Characterization of voltage dependent capacitors The Q(t) curve model, small signal capacitance, large signal capacitance,

total capacitance, capacitances transformation. Losses of ceramic capacitors Series and parallel loss resistor models. Steinmetz equation Simulation of nonlinear ceramic capacitor Modeling alterative, PSPICE demonstration, common misconceptions Application of ceramic capacitors as a control element Series resonant converters LLC resonant converter Wireless power transfer

Who should attend?This seminar is intended for workers in the area of power electronics. It assumes a working knowledge of electrical engineering basics and a familiarity with switch mode converter technology. The seminar is intended to cater to a wide audience level, from the junior workers to the experts.

Seminar 4

Latest Developments in Magnetic Technology for High Efficiency and High Power DensityIonel Dan Jitaru, Rompower, USA

About the instructorIonel Dan Jitaru is the founder of Rompower Inc., later Ascom Rompower Inc. and Delta Energy Systems (Arizona) Inc., an internationally recognized engineering firm in the field of power conversion. Currently he is the president of Rompower Energy Systems Inc., an advance development company in Power Conversion Field. He has published 54 papers wherein several of them have received the best paper award, and held 48 professional seminars at different International Conferences in the power conversion. Mr. Jitaru has pioneered several trends in power conversion technologies such as »PWM Soft switching«, »Full integrated multilayer PCB Magnetic«, »Synchronized rectification« and recently »True Soft Switching technologies« wherein the primary switchers turn on at zero voltage and the secondary switchers turn off at zero current. Some of these technologies have been covered by 62 intellectual properties wherein 33 are granted patents.

ContentThe seminar will present a comprehensive overview of the modern magnetic technologies currently used in power conversion and new trends in magnetics designed to address the new demands in power conversion such as efficiency and power density. Though we had significant progress in the semiconductor industry in the last 20 years, the technology in magnetics still lags behind. The seminar will start by presenting several key characteristics of magnetic transformers such as leakage inductance, stray inductance, inter-winding and intra-winding capacitances and their impact in power conversion perfor-mance. Methods of measuring and controlling these parasitic elements are also presented.

The seminar will present the most suitable magnetic technology for different topologies designed to enhance the efficiency and power density. A special focus will be on magnetic design in a high density packaging and its impacts in EMI. A chapter is dedicated to quasi integrated and integrated magnetics, as well as methods of calculating and simulating such structures. In addition there will be presented structures wherein two independent power trains are placed on the same standard magnetic core without interference.

Magnetic technologies for specific applications such as very low voltage and high current will be presented together with experimental results. The seminar will also show some trends in magnetics for higher frequency operation. A chapter will be dedicated to the new magnetic technology for very high efficiency applications. These new magnetic technologies are compatible with the latest technologies in power conversion aimed at very high efficiency and very high power density. The seminar will address different application starting from very high density and very high efficiency AC-DC adapters to the multiple KW DC-DC converters and Power Factor Correction modules.

The presentation will be highlighted with design guidance, a design example and experimental results, such as 99.6% efficiency transformers for 99% efficiency DC-DC Converters.

Who should attend?This course is designed for magnetic engineers, power conversion engineers and technical managers who are involved in state-of-art power conversion. The participants will get familiar with the latest advancement in magnetics in power conversion aimed to increase the perfor-mance and reduce the total cost.

Seminars Sunday, 5 May 2019, 14:00 – 17:30Venue: Arvena Park Hotel Nuremberg, Görlitzer Str. 51, 90473 Nuremberg

10 | 11

Seminar 5

Functional Safety – an Introduction based on Requirements for Automation DrivesJens Onno Krah, Cologne University of Applied Sciences, D

About the instructorProf. Jens Onno Krah studied electrical engineering at the Bergische Universität Wuppertal and received his doctorate in 1993 from Prof. Holtz in the field of electric machine and drive research. Until February 2004 he was Technical Director responsible for the development of Kollmorgen Servo Drives. Since 2004 Prof. Krah has been teaching Control Engineering, Motion Control, FP-GA-based Digital Signal Processing and Functional Safety at TH Köln. The research focus is on the development of robust, safety-related and energy- efficient inverter control with programmable hardware.

ContentFunctional safety is increasingly requested for drives. Safe Torque Off (STO) is now standard on many frequency inverters and servo drives. Safe motion and safety related field buses are an increasing demand. The technical basics of functional safety are explained in the seminar:

Explanation of Safety Keyword Mean Time To Fail (MTTF), Failure In Time (FIT), Safe Failure Fraction

(SFF), Diagnostic Coverage (DC), Fail Safe – Fail Silent, Fail Operational, Fault Exclusion, Category, Performance Level (PL), Safety Integrity Level (SIL)

Safe Digital Input Testing, calculation of FIT, DC and SFF

Safe Digital Output Testing, calculation of FIT, DC and SFF

Safe Torque OFF (STO)Basic techniques to implement STO

Safe Brake Control (SBC) Safety Related Fieldbus Technology

Black Channel, Cyclic Redundancy Check (CRC), PROFIsafe, FSoE Safety Related Motor Feedback Utilizing two feedback devices Analog interface: Sin-Cos Encoder, Resolver / Digital Interface:

Single-Turn, Multi-Turn EnDAT, BiSS, Hiperface DSL, SCS open link Safe Motion (IEC 61800-5-2) Safe Limited Speed (SLS) / Safe Limited Position (SLP), etc. Safe Logic Environment Requirements Power Supply Clock, Voltage and Temperature Monitoring Safe Logic Implementation Redundancy, Diversity Dual CPU, Lockstep CPU, FPGA Error Correction Code (ECC) Watchdog Build In Self-Test (BIST), Self-Test Library (STL)

Who should attend?This seminar is intended for designers and engineers involved in frequency inverter and servo drive design for automation. It assumes a working knowledge of electrical engineering basics and a familiarity with inverter design principles. Knowledge of functional safety is not necessary.

Seminar 6

High Power Medium Frequency Transformer Design OptimisationDrazen Dujic, Marko Mogorovic, Power Electronics Laboratory, EPFL, CH

About the instructorsDrazen Dujic is an Assistant Professor and Head of the Power Electronics Laboratory at EPFL. He received the Dipl.Ing. and MSc degrees from the University of Novi Sad, Novi Sad, Serbia in 2002 and 2005, respectively, and the PhD degree from Liverpool John Moores University, Liverpool, UK in 2008. From 2003 to 2006, he was a Research Assistant with the Faculty of Technical Sciences at University of Novi Sad. From 2006 to 2009, he was a Research Associate with Liverpool John Moores University. After that he moved to industry and joined ABB Switzerland Ltd, where from 2009 to 2013, he was Scientist and then Principal Scientist with ABB Corporate Research Center in Baden-Dättwil, and from 2013 to 2014 he was R&D Platform Manager with ABB Medium Voltage Drives in Turgi. He is with EPFL since 2014. His research interests include the areas of design and control of advanced high power electronic systems and high-performance drives, predominantly for the medium voltage applications related to electrical energy generation, conversion and storage. He has authored or co-authored more than 100 scientific publications and has filed twelve patents. In 2018, he received EPE Outstanding Service Award from European Power Electronics and Drives Association, while in 2014, he received The Isao Takahashi Power Electronics Award for Outstanding Achievement in Power Electronics. He is Senior Member of IEEE, EPE Member, and serves as Associate Editor for IEEE Transactions on Power Electronics, IEEE Transactions on Industrial Electronics and IET Electric Power Applications.

Marko Mogorovic received the Dipl. Ing. degree from the University of Belgrade, Belgrade, Serbia, in 2013 and MSc degree from the École polytechnique fédérale de Lausanne (EPFL), Lausanne, Switzerland, in 2015. Currently, he is pursuing the Ph.D. degree at Power Electronics Laboratory at EPFL, Lausanne, Switzerland. His current research focus is on the design optimization of the high power medium frequency transformers for medium voltage applications and emerging solid-state transformers. He is an IEEE Student Member.

ContentWith increased interest in Power Electronic Transformers or Solid State Transformers, several technical problems arise related to actual realization of these technologies. Irrespectively of adopted power electronic topologies, these structures are characterized as being modular and having inherently built-in galvanic isolation at medium or high frequency. Designing a high-power high-voltage medium frequency transformer is associated with multiple technical challenges related to electrical, magnetic, dielectric and thermal performance limits encountered in the system. Various technological choices must be carefully considered and selected before being included into a generic multi-objective optimization. Tutorial will provide an overview and address challenges coming from the application area, characteristics of involved materials and available design choices, associated modeling of different elements impacting medium frequency transformer design, as well as optimi-zation process as whole. Multiple illustrative design examples will be critically analyzed in terms of their key performance indicators, and supported with practical examples realized by the tutorial instructors themselves.

Who should attend?The tutorial attendees should be familiar with basics laws of electromagnetics and have some background in power electronics. The Solid State Transformers, where medium frequency transformers are essential technology, are extremely popular nowadays. Topic is therefore relevant to a broad audience: Master, PhD students, research scientists, and engineers from industry.

Seminar 7

Discover3Dprinting powered by FormnextMoritz Wollbrink, ACAM / Fraunhofer IPT, D

About the instructorMoritz Wollbrink received his master degree in mechanical engineering at Paderborn University, Germany. In time-shared operation he worked in the technology development department of a leading company in electrical connectivity, where he also had finished his apprenticeship in the tool making department before studies. He started working at Fraunhofer Institute for Production Technology IPT in Aachen, Germany, in August 2014 as a research fellow in the group »Technology Organization« within the department of »Non-Conventional Manufacturing Processes and Technology Integration«. Since 2015, Mr. Wollbrink is Manager »Business Unit Tool and Die Making«. This includes the work on different national and international projects related to additive manufacturing and technology chains. The bilateral as well as consortium projects are facing a wide range of industry sectors, but focusing tool and die making companies.

ContentFormnext created the seminar series Discover3Dprinting in cooperation with the ACAM Aachen Center for Additive Manufacturing with the aim to provide basic knowledge for those who are considering to adopt Additive Manufacturing in their industrial processes. Industrial 3D printing is breaking through in many sectors and applications, but companies often don’t know enough about the capabilities of the technologies and areas in which AM really pays off.The seminar Discover3Dprinting is designed for everyone who considers to include Additive Manufacturing (AM) into the production process, but does struggle to find access to the technologies. The seminar provides a compre-hensive insight into AM and at the same time discusses practical questions, such as:

What is 3D printing and additive manufacturing and how does it work? Should I consider 3D printing for my production? Can I make money with it? Where to get examples about obstacles, experiences and successful

implementation? What are the first / next steps to get started?

In addition, participants will learn what and where the obstacles by its im-plementation are as well as what applications are not profitable for industrial 3D printing. Furthermore, attendees will also develop an understanding of where additive technologies can complement conventional processes, e.g. how process chains can be established with pre-machining and post-processing.

If you have ever asked yourself one of the above questions, you should par-ticipate in this seminar. Independent specialists from ACAM – Aachen Center for Additive Manufacturing will give answers for your entry into the world of 3D printing.

What topics to expect: The next big thing – Hype, benefits and typical business cases Technology overview – What is possible with today‘s technologies? Applying AM profitably – Success and failure stories AM for your sector – Concrete approaches and new ideas

After the seminar, the presentation will be available to all registered participants.

About ACAM: The ACAM Aachen Center for Additive Manufacturing, based on the RWTH Aachen Campus, pools resources and facilitates industry access to the Additive Manufacturing expertise of leading scientific and research institutions. It was founded as a platform for networking, coordinating joint research and development as well as conducting training and education seminars.

About Formnext: Formnext has established itself as the leading international exhibition for additive manufacturing and the next generation of intelligent industrial production. Here, international exhibitors present the entire spectrum of design and software solutions, including materials, AM production, pre- and post- processing, research and development and service providers.

Who should attend?The seminar is directed at developers, engineers, CEOs and all decision-makers interested in learning more about how they might utilize 3D printing, and in charge to find out where the potential of Additive Manufacturing can benefit their own production operations.

Monday, 6 May 2019,14:00 – 17:30

Monday, 6 May 2019,09:00 – 12:30

Tutorials Monday, 6 May 2019, 09:00 – 17:00Venue: Arvena Park Hotel Nuremberg, Görlitzer Str. 51, 90473 Nuremberg

Tutorial 1

Latest Developments in Soft Switching TechnologiesIonel Dan Jitaru, Rompower, USA

About the instructorIonel Dan Jitaru is the founder of Rompower Inc., later Ascom Rompower Inc. and Delta Energy Systems (Arizona) Inc., an internationally recognized engineering firm in the field of power conversion. Currently he is the president of Rompower Energy Systems Inc., an advance development company in Power Conversion Field. He has published 54 papers wherein several of them have received the best paper award, and held 48 professional seminars at dif-ferent International Conferences in the power conversion. Mr. Jitaru has pio-neered several trends in power conversion technologies such as »PWM Soft switching«, »Full integrated multilayer PCB Magnetic«, »Synchronized rectifi-cation« and recently »True Soft Switching technologies« wherein the primary switchers turn on at zero voltage and the secondary switchers turn off at zero current. Some of these technologies have been covered by 62 intellectual properties wherein 33 are granted patents.

ContentSoft switching topologies have become popular in many applications in the last thirty years. Though we have such a long tradition in soft switching technologies, some of these technologies have added too much complexity and their practical use became questionable. In addition, some of the tradi-tional soft switching topologies address just the soft switching on the primary side and not the soft switching in the secondary side. The technologies which will be presented in this tutorial are entitled, »true soft switching« technologies because they offer soft switching in primary side and in the secondary side eliminating any spikes and glitches in the circuit.

Most of these technologies are novel and never presented before. In many of these novel technologies, zero voltage switching is accomplished by using the energy contained in the parasitic elements which traditionally were dissi-pated. The modern soft switching technologies which will be presented in the tutorial do provide true soft switching. In true soft switching technology, the primary switching devices turn on at zero voltage and the secondary switching devices turn off at zero current. There is no ringing or spikes across any of the switching devices during operation; this is done without the use of any snubbers. These technologies are a derivation of the classical topologies, such as the flyback, boost, two transistors forward, half bridge, and full bridge with some minor modifications; and most of them are using intelligent control to obtain true soft switching. The goal of the modern soft switching technologies is to have a simple and low-cost hardware and an intelligent control designed to minimize the losses under different operating conditions.

Though the tutorial will be focused on the modern technologies, a section is dedicated to magnetics. In the quest for efficiency above 99%, the magnetic technology plays a very important role. In some applications such as modern soft switching flyback some of the energy for soft switching is extracted from the parasitic elements of the transformer. A detailed power dissipation analysis in several applications will highlight the need for magnetic optimization.In spite of the significant progress in the semiconductor industry, the tech-nology in magnetics lags behind. The tutorial will describe the impact of the parasitic elements in the magnetics in optimizing the performance of the power converters. Currently we are reaching 99% efficiency in PFC and DC-DC converters by using these modern soft switching technologies, optimized magnetics and intelligent control. The developments in semiconductor tech-nology such as GaN and SiC did help us to further improve the efficiency exceeding the 99% efficiency in some applications.

The tutorial will present also the impact of intelligent power processing in opti-mizing the efficiency and even in converting a traditional hard switching topology into a soft switching topology. The presentation will be highlighted with design examples and experimental results such as 99%+ efficiency PFC with power densities above 1000W / in3, and 99% efficiency isolated DC-DC Converters.

Who should attend?This course is designed for magnetic engineers, power conversion engineers and technical managers who are involved in state-of-art power conversion.

Tutorial 2

WBG Devices, Circuits and MeasurementEdward Shelton, Teng Long, Cambridge University, GBJeff Carter, Borg Warner Turbo Systems, GBMichael de Rooij, Efficient Power Conversion, USARichard McMahon, University of Warwick, GBSteven Sandler, Picotest, USARishad Ahmed, Dynex Semiconductor, GB

About the InstructorsEdward Shelton graduated with a MEng from Cambridge University in 1997, and is an engineering consultant developing cutting-edge technology for the power industry. He is the inventor of several patents. He currently holds an SRA position at Cambridge University.

Michael de Rooij received his PhD from the University of Johannesburg, South Africa. He is currently VP of Applications at EPC Corp. He has authored over 50 papers and journals and has been granted 30 patents, with a further 26 pending. He is the author of 4 books.

Richard McMahon is Professor of Power Electronics at Warwick University. He was previously a lecturer at the Cambridge University. Research areas are electric vehicle powertrain, wireless charging, renewables, and energy storage. He is a Chartered Engineer and a Fellow of the IET.

Steve Sandler has 40 years of power systems experience. He is the founder of PICOTEST, specializing in instrumentation. He lectures internationally. His latest book »Power Integrity: Measuring, Optimizing and Troubleshooting Power-Related Parameters in Electronics Systems«.

Dr. Teng Long is a lecturer at Cambridge University. Research areas include electric vehicle drivetrains, charging and renewables. He previously worked for GE on electric ship propulsion systems. He has a PhD from Cambridge University. He is a Chartered Engineer (CEng).

Jeff Carter has a PhD in electric power conversion from the University of Birmingham. He joined Cummins in 1996 and BorgWarner Turbo Systems in 2014. He has championed the introduction of electronics in turbochargers. His current position is Research Engineering Manager.

Rishad Ahmed received M.Sc. degree and Ph.D. degree, both in power elec-tronics from the University of Manchester, UK, in 2013 and 2017, respectively. Since 2017, he has been working as an R&D engineer at Dynex Semiconductor. His research interests include wideband-gap devices and high-frequency DC-DC converters.

ContentThis tutorial covers a broad range of wide-band-gap (WBG) orientated and related topics, including power switching devices, gate-drives, application circuits and measurement techniques. The goal of the tutorial is to demonstrate how to achieve practical, efficient and reliable operation of WBG devices in high- frequency power switching circuits. We are fortunate to have some distinguished and knowledgeable presenters, both from industry and academia, for this session.

We will start with an introduction to WBG power devices and make a com-parison between the basic material characteristics and transistor types, and explore some of the potential advantages over traditional silicon devices. We will then focus on GaN, looking at optimal power circuit layout, comparing various gate-drive solutions, and consider a number of example applications; including hard-switched and soft-switched topologies. We will discuss the advantages of creating an integrated half-bridge power block, and look at some of the commercially available solutions. The presentation will then take a detailed look at SiC, using an automotive traction application as an example to describe some of the advantages, such as reduced switching and part-load losses, as well as the challenges, such as paralleling many devices to achieve the required current rating. We will look at using WBG devices for various topical applications, including: Plug-in battery charging, wireless charging, PFC active front-ends, DC-DC converters, DC-AC converters for solar applications and high-speed motor drives. There are a number of ancillary considerations, such as magnetic materials for inductive components that operate at high frequencies, the implications of packaging, floating power supplies for gate-drives, isolated signaling, availability and reliability, that will also be discussed. We will present some of the challenges that come with measuring the performance and testing the operation of fast switching WBG circuits. Commercially available solutions will be presented, along with some embedded measurement circuit alternatives, and the limitations of these will be discussed. We will also touch upon the EMI implications of using WBG devices and how to mitigate the effects of faster switching edges.

The presentation will conclude with a practical comparison between existing silicon IGBTs and SJ MOSFETs, and WBG devices that are currently available. A Q&A session will bring the day to a close.

Who should attend?The presentation material is accessible to novices, whilst also having content that will be of interest to well-seasoned power electronics engineers.

Tutorial 3

Electromagnetic Design of High Frequency Converters & DrivesJacques Laeuffer, Dtalents, F

About the instructorJacques Laeuffer has a 35 years’ experience of R&D in Power Electronics, inside international companies, with powers from 10 W up to 10 MW, including HF resonant converters and high voltage transformers, electric machines and inverters for hybrid cars. He is inventor of 27 granted patents, and author of over 80 technical papers. As a Consultant, his activities extend from one day consulting to several months’ projects, including choices and design of conversion topologies, power components and electric machines sizing, EMC, digital control, industrial property, field support. Affiliated Professor at Ensta-ParisTech, he teaches also at CentraleSupelec, France, and for inter and intra companies trainings, on former topics and also on mechatronics, cars powertrains, or »Experience and Innovation«.

ContentIncreasing high frequencies (HF) with very fast Si or SiC and GaN semiconductors, leads to new challenges: i.e. the »wiring inductance« issue is dramatically increased, while magnetic windings show »parasitic capacitances«. Electric machines suffer insulation breakdowns by HF ringing over voltages, etc. As a matter of fact, reduced commutations times become smaller than electromagnetic propagation delays inside power conversion and intelligent motion systems. Thus conventional »electric circuit« equations do not operate anymore as before. And »Tips« are no more sufficient, and even may lead to misinterpre-tations and mistakes.

The tutorial shows a new appropriate physical analysis to understand what happens, and how to make clean designs without noisy resonances, EMI or extra losses, for full benefit from new semiconductors. For this purpose, the tutorial shows 3D distributions of volumes energy densities and surfaces power densities and focuses on main phenomena to lead to simpler under-standing. Number of practical designs are calculated, analytically and / or by simulation, and optimized for a wide range of powers, frequencies and impedances.

Lines and Wiring Design Propagation process on lines: energies, impedance & speed Clean power propagation or filtering or oscillatory reflections Design bifilar, coaxial and strip lines accordingly, on PCB or others Examples: busbars, modules, spot welder, radiology, ethernet, etc

Magnetics and Capacitors Design Capacitors sizing and shape for clean HF propagation Transformers, inductors and electric machines stators sizing HF propagation process in magnetics, as DM and CM Simulation: Spice, Finite Difference Time Domain (FDTD) Propagation delays calculation. Shapes for clean design HF equivalent schematics. Proximity effect and optimization

HF Converters Design Topology choice from flyback, forward, bridge, to ZVS & ZCS Applications: PFC, computer, induction heating, solar, HiFi, etc SMD commutation loop <1nH, including DC capacitor Power module + busbars + DC capacitor: loop <1nH

Intelligent Motion Drives Design System = inverter + shielded cable + stator + filters + ground HF equivalent schematics combining above knowledges Differential Mode (DM) and Common Mode (CM) aspects Examples of HF simulations. Clean impedances matching

Who should attend?This course is targeted towards engineers, students or project managers, who design, specify, simulate, tune, or integrate high frequency power supplies, converters, EMC filters, electric machines, and intelligent motion, for high efficiency conversion, low global cost and high reliability.

Tutorial 4

High Performance Control of Power ConvertersChristian Peter Dick, Jens Onno Krah, Cologne University of Applied Sciences, D

About the instructorsChristian P. Dick studied Electrical Engineering at RWTH Aachen University, Germany, where he also received his PhD degree. Beginning of 2011 he joined SMA Solar Technology AG as director for advance development of solar converters up to 20kW. He is now professor for power electronics and electrical drives at Cologne University of Applied Sciences. His main research interests are resonant converters with focus on magnetics and the large-scale utilization of renewable energy.

Prof. Jens Onno Krah studied electrical engineering at the Bergische Universität Wuppertal and received his doctorate in 1993 from Prof. Holtz in the field of electric machine and drive research. Until February 2004 he was Technical Director responsible for the development of Kollmorgen Servo Drives. Since 2004 Prof. Krah has been teaching control technology, motion control, FP-GA-based digital signal processing and functional safety at the TH Köln. The research focus is on the development of robust, safety-related and energy- efficient inverter control with programmable hardware.

ContentUtilizing power electronic based converter technology is a key approach to build energy efficient solutions. Due to the innovation cycles of the semicon-ductor suppliers the size and the cost of the more and more complex inverter systems is not increasing. However, especially the new fast switching wide

12 | 13

bandgap devices (SiC and GaN) are challenging the control hardware. The advanced control architectures are covered by discussing algorithms and possible implementations using µC, DSP and FPGA technology. Robust con-troller designs with well-defined set up procedures or reliable self-tuning algorithms can help to use these innovations utilizing a reasonable set-up time.

1. Converter Design Basics GBT, MOSFET, SiC State-machine based dead time generation 2-Level / 3-Level Inverter – including Energy Efficiency Classes Gate-driver basics

2. Inverter Modulation Techniques Single-Phase Modulator Pulse Width vs. Pulse Frequency Modulation 2-Level / 3-Level SVM

3. Analog to Digital Conversion Sigma-Delta DAC versus R-2R DAC and PWM Sigma-Delta Modulation Sinc³ decimation filtering Efficient FIR implementations, Demonstration, Examples

4. Current Sensing Transducer versus shunt Synchronous sampling Aliasing, EMI suppression 2 vs. 3 current probes in 3~ Loads

5. Current Control Hysteresis Control Sampling Control Synchronous Control (FOC): Clarke, Park, decoupling Hybrid control (single-phase) PLL Dead-Time Compensation Special Controls: Flyback, resonant LLC

6. Current Prediction Modeling the Plant Smith Predictor Current Observer

7. Parameter Tuning Theoretical background Parameter estimation

8. Conclusion and Future Trends

Who should attend?This tutorial will be especially valuable for engineers and PhD’s who address the following control aspects:- Digital Motion Control- Mains Control, including PFC- High-Bandwidth Sensor Circuitry including Robust Signal Transmission- Modulation Techniques- Controller Implementation using FPGA- Controls-Related Novel Converter Issues like Wide-Bandgap Devices

Tutorial 5

Advanced System Design with Ultra-Fast Si / SiC / GaN Power Semiconductor DevicesTobias Reimann, ISLE Steuerungstechnik und Leistungselektronik, DThomas Basler, Infineon Technologies, D

About the instructorsTobias Reimann received 1994 his PhD from the Technische Universität Ilmenau in the field of power semiconductor applications for hard and soft switching converters. In 1994 he was one of the founders of the company ISLE GmbH which is engaged in system development for power electronics and electrical drives. He is managing director of this company. In addition, since July 2009 he is Professor for Industrial Electronics at Technische Universität Ilmenau. Prof. Reimann is a member of scientific board of »Thuringian Center of Excellence in Mobility (ThIMo)« at Technische Universität Ilmenau in the field of automotive electronics.

Thomas Basler received his Diploma in Electrical Engineering from Chemnitz University of Technology in 2009. His Diploma thesis was on the robustness of power diodes. Between 2009 and 2013 he was a member of the scientific staff at the Chair of Power Electronics and Electromagnetic Compatibility at Chemnitz University of Technology. At the beginning of 2014 he received his PhD. His thesis is about short-circuit and surge-current ruggedness of IGBTs and was supervised by Prof. Dr. Josef Lutz. 2014 he joined Infineon Technologies AG, Neubiberg, Germany, where he works on the development of SiC MOSFETs, diodes and Si IGBTs.

ContentFast Power Devices / Modules / Reliability

New developments in fast power devices (SiC / Si MOSFETs, IGBTs, GaN devices, freewheeling diodes)

Device design, properties and suitable applications Reliability topics of (new) devices, e.g. gate oxide, dynamic Ron, cosmic

ray ruggedness Power module layouts and optimal design for low inductivity Thermal mismatch, thermal stress, power cycling capability

Drive and Protection Principles, technical realizations Special driver requirements for fast power devices (Si, SiC, GaN) Failure modes, failure detection

Topology-dependent Power Losses DC / DC-Converter DC / AC-Converter Load Cycles Calculation of heat sink

Device Induced Electromagnetic Disturbance Parasitics Oscillations in Power Modules

Special Topics of ApplicationConsideration of special problems and questions of participants, for example:

Parallel / series connection of power devices Special effects in ZVS / ZCS topologies Special problems related to new device technologies Short-circuit ruggedness of IGBTs and SiC MOSFETs

Who should attend?Engineers designing converters equipped with fast power semiconductors like Si / SiC MOSFETs, IGBTs and diodes having basic knowledge in power devices and power converters.

Tutorial 6

Diagnosing and Locating Sources of EMI in Switchmode Power ConvertersBruce Carsten, Bruce Carsten Associates, USA

About the instructorBruce Carsten has 49 years of design and development experience in switchmode power converters at frequencies from 20 kHz to 1 MHz. In 1982 he designed a 48 Vdc, 200 A, 50 kHz natural convection cooled switchmode telecom rectifier which met the FCC Class A requirements for conducted and radiated emissions. This seminar targets the practicing design or test engineer, and emphasize an intuitive understanding of the phenomena involved.

ContentThis tutorial is an expanded version of the seminar presented at PCIM 2018.Ideally, power converters would be designed for low EMI from the beginning, but that can take many years of experience to »get it right the first time«, or to even come close. A basic problem is that EMI is a very »low energy« phenomena, with only 8 to 80 nW of conducted EMI allowed below 30 MHz at any given frequency (depending on the applicable standards), with similar constraints on radiated EMI above 30 MHz. These limits apply regardless of converter power level, so a 10 kW converter has effectively 1.000 times tighter limits than a 10 W converter, with 0.8 to 8 pW per watt output allowed. Consequently, the sources of EMI are easily overlooked as trivial by the less experienced engineer.

Failure to meet EMI standards can be found »the hard way«, by paying for an EMI lab to determine this, but they will not be able to advise you how to fix it. Alternatively, with a relatively modest investment in equipment, you can first get a reasonable estimate of the conducted and radiated emissions level, and then, with very little more equipment, begin to track down the origins.

Conducted EMI is measured with a LISN (Line Impedance Stabilization Network) on each power input, and with these you can measure the EMI yourself with a spectrum analyzer, tunable voltmeter, or even an oscilloscope with an FFT (fast Fourier transform) capability. However, this measurement is the vector sum of common (longitudinal) and differential (transverse) mode currents, which are generated by completely different mechanisms. A transformer cir-cuit will be presented which can simultaneously separate the LISN outputs into mutually isolated common and normal mode currents, allowing their sources to be tracked down individually. Typical sources of both will be de-scribed, and methods to minimize each source presented.

Radiated noise is almost invariably generated by common mode currents in the input (and / or output) power lines, using these lines as a radiating antenna. The sources of these currents are largely the same as for conducted EMI and, to some extent, can be found from the separated LISN outputs, but HF current transformers are better suited to this task due to the high frequencies which are involved.

New material will include: Information on the design and performance of HF current transformers

(HFCTs) for measurement of CM and NM currents. Such HFCTs can be used to measure CM and NM currents in place of LISNs and a CM and NM noise extractor, although with lower accuracy due to the lack of the well-defined source impedance provided by LISNs, and any pre-existing noise on the power lines, unless an EMI filter is provided on the power source

Measured characteristics of a recommended low noise amplifier, of which one or two in cascade may be required if the above HFCT is to be used with an oscilloscope instead of a spectrum analyzer

Design information and measured characteristics of the LISN CM and NM conducted noise extractor circuit

Information on CM and NM filter design

Who should attend?This seminar is directed towards the engineer, technologist or technician who needs to locate sources of EMI in a switching power converter so that, once found, they can be remedied. This seminar is directed towards the engineer, technologist or technician who needs to locate sources of EMI in a switching power converter so that, once found, they can be remedied.

Tutorial 7

Reliability of Si and Wide Bandgap Power Devices and PackagesJosef Lutz, Technical University of Chemnitz, D

About the instructorJosef Lutz joined Semikron Electronics, Nuremberg, Germany in 1983. First he worked in the development of GTO Thyristors, then in the field of fast recovery diodes. He introduced the Controlled Axial Lifetime (CAL) diode. Since August 2001 he is Professor for Power Electronics and Electromagnetic Compatibility at the Chemnitz University of Technology, Germany. His main fields of research are ruggedness and reliability of power devices. He is involved in several national and international research projects regarding reliability of IGBTs and wide bandgap devices. He is one of the authors of the book »Semiconductor Power Devices – Physics, Characteristics, Reliability«, published by Springer 2011, second edition 2018.

ContentFocus is on thermal problems and other lifetime-limiting mechanisms in power devices, aspects going from Si to SiC and GaN are considered.1. Basic architecture of Si and SiC power modules and discrete packages2. Materials, substrates and interconnection technologies3. Heat transport, thermal resistance, thermal impedance, cooling methods4. Temperature determination

Virtual junction temperature: Definition, measurement Temperature sensitive electrical parameters in Si, SiC, GaN

5. Fatigue processes, fatigue detection, related tests Bondwire lift-off / Heel cracks, solder fatigue Gate stress test for Si, SiC and GaN High voltage reverse bias and high voltage, high humidity reverse bias test

6. Power cycling as main method to determine package related lifetime expectation

Experimental setup, test strategies Test according to the Guideline AQG 324 New methods for state-of-health analysis

7. Empirical models for lifetime prediction LESIT model, CIPS 2008 model for power modules, applicability, limits Special aspects with discrete packages Special aspects with SiC devices First results with GaN devices

8. Improved technologies and future trends for increased lifetime expectation Diffusion sintering, Diffusion soldering, Improved bond wires, Improved substrates

9. Some aspects on cosmic ray reliability Cosmic ray sources Failure pattern Failure mechanism Comparison SiC devices and Si devices

Who should attend?Engineers in design of converters with IGBTs and SiC devices with interest in reliability, beginners as well as experienced engineers are welcome.

Tutorials Monday, 6 May 2019, 09:00 – 17:00Venue: Arvena Park Hotel Nuremberg, Görlitzer Str. 51, 90473 Nuremberg

14 | 15

Tutorial 8

Reliability Engineering in Power Electronics SystemsFrede Blaabjerg, Francesco Iannuzzo, Huai Wang, Aalborg University, DK

About the instructorFrede Blaabjerg is currently a Professor with the Department of Energy Technology and the Director of Center of Reliable Power Electronics (CORPE), Aalborg University, Denmark. He has intensive research work on power electronics and its applications in motor drives, wind turbines, PV systems, harmonics, and the reliability of power electronic systems. He has held more than 300 lectures national and international, most of them in the last decade are invited and as keynotes at conferences, covering various topics on power electronics, including the reliability. He has contributed more than 350 journal papers. Among other awards, Dr. Blaabjerg received the IEEE William E. Newell Power Electronics Award in 2014.

Francesco Iannuzzo is currently a Professor of Reliable Power Electronics at the Aalborg University, Denmark, and CORPE (Center of Reliable Power Electronics). His research interests are in the field of reliability of power devices, including against cosmic rays, power device failure modelling and testing of power modules under extreme conditions. He has given more than 10 seminars at world-class conferences (mostly IEEE), and has contributed almost 200 journal and conference papers in the field. Prof. Iannuzzo has been the ESREF 2018 general chair, the first European conference on reliability of electronics.

Huai Wang is currently an Associate Professor with the Center of Reliable Power Electronics (CORPE), Aalborg University, Denmark. His research addresses the fundamental challenges in modelling and validation of power electronic component failure mechanisms, and application issues in system-level predict-ability, circuit architecture, and robustness design, and condition monitoring. Prof. Wang received the IEEE PELS Richard M. Bass Outstanding Young Power Electronics Engineer Award, in 2016. He has served as an Associate Editor of IEEE Transactions on Power Electronics since 2015.

ContentIn many mission-critical applications of energy conversions such as renewables, industry, electric vehicles, and aircrafts, etc., power electronics should be extremely reliable and robust to avoid high cost of failures. In order to meet this challenging requirement, there is an ongoing paradigm shift in this field from the statistics-based assessment to the physic-of-failures based analysis. In this shift, the stress and strength models of the power electronics systems need to be accurately built, and both factors are closely related to the operating conditions or mission profiles of the whole systems. These mission profiles will involve multi-disciplinary knowledge and new engineering approaches for the design of reliability performances.In this tutorial, a recap about com-monly-used power components is given, along with some key reliability engi-neering concepts. Afterwards, a case study about reliability prediction of a real converter is presented, followed by a section on promising approaches like condition monitoring and active thermal control. An important introduction to abnormal conditions is also given to complete the seminar. The tutorial is concluded presenting the vision of the instructors on the future research opportunities in reliability of power electronics. The approaches presented in the tutorial are also the common interest for the companies involved in the Center of Reliable Power Electronics (CORPE) at Aalborg University.

1. Introduction2. Recap on modern power electronic components

MOSFET and IGBT recap Wear out Abnormal conditions

3. Introduction to reliability basics Reliability basics, Weibull distribution, Failure rates, Bx lifetime, Reliability

block diagrams Introduction to mission profiles

4. Reliability prediction of power electronic converters – a case study Six-step system-level reliability prediction approach for power electronic

converters

Reliability prediction for model based power electronic converter design CORPE Design for Reliability and Robust (DfR2) tool platform

5. Condition monitoring and active thermal control for improved reliability Basics idea and control freedoms Junction temperature estimation Damage measurement and health monitoring Thermal control under normal operations of converter

6. Abnormal condition testing basics for power electronic components Impact of severe and abnormal events on the reliability performances Basic of instabilities and related phenomena Instabilities during short circuit of IGBTs Instabilities during short circuit of Wide bandgap devices

7. Future Research Opportunities in Reliability of Power Electronics Interdisciplinary efforts and opportunities ahead

Who should attend?Engineers or researchers in power electronics design and testing with interest in improving reliability performance. Beginners as well as experienced engineers are both welcome. Focus is more on the reliability engineering including testing and modelling aspects from components to system level.

Tutorial 9

Design Methods and Tools for Power ElectronicsThierry Meynard, LAPLACE Laboratory, FGuillaume Fontes, Power Design Technologies, F

About the instructorsThierry Meynard graduated from the Ecole Nationale Supérieure d’Electro-technique, d’Electronique, d’Hydraulique de Toulouse in 1985, became a Doctor of the Institut National Polytechnique de Toulouse, France, in 1988. He joined the CNRS (Centre National de la Recherche Scientifique) as a full-time researcher in 1990, was Head of the Static Converter Group from 1994 to 2001, and has been a part-time consultant with Cirtem from 2000 to 2016. He is now Directeur de Recherches CNRS at the LAPLACE(*) laboratory, co-founder and part-time consultant of the start-up Power Design Technologies. His main research interests are related to series and parallel multicell converters, magnetic components and the development of design tools for power electronics. He is the co-inventor of several topologies of multilevel converter used by ABB, Alstom, Cirtem, General Electric and Schneider Electric: »Flying capacitor«, »Stacked MultiCell«, »5LANPC«, »AC / AC chopper«.

Guillaume has been an associate Professor at the Polytechnic National Institute of Toulouse and at the LAPLACE lab since 2006. He studied electrochemical storage of electric energy and now focuses on methods and tools for the design of power converters. He co-developed a power converter design software prototype in 2013, which is now owned by Power Design Technologies. Guillaume received the M.Sc from INP-ENSEEIHT in 2001, graduated from the Ecole Normale Supérieure de Cachan in 2003 and received his PhD from the National Polytechnic of Toulouse in 2005.

ContentMulticell converters have been introduced more than 30 years ago, and they have gradually been introduced in the real world as commercial products. More recently Wide Band Gap semiconductors have brought significant im-provements, although cost and reliability is still to be improved. These two innovations give a lot of degrees of freedom to the designer, and the need for dedicated methods and tools is more and more obvious. In this presentation, we will show how a design environment can be used to systematically investigate the different design options, and how the series / parallel multicell topologies allow challenging big modules using smaller devices with reduced voltage /current ratings. Competition between Si and WBG devices is thus more open and the best choice can be different for each set of specifications.

Who should attend?Converter design is a challenging task; many degrees of freedom (components, topology...) and many informations to be manipulated to make decision. Come and learn how to evaluate efficiency, weight and cost of a converter matching your requirements in seconds using dedicated methods and tools and make sure the best design option has not been missed!

Tutorial 10

Battery Management Systems and Power Converter Solutions for Lithium-Ion BatteriesDaniel-Ioan Stroe, Remus Teodorescu, Aalborg University, DKMaciej Swierczynski, Lithium Balance, DK

About the instructorsDaniel-Ioan Stroe – received the Dipl.-Ing. degree in automatics from »Transilvania« University of Brasov, Romania, in 2008, and M.Sc. degree in wind power systems from Aalborg University, Aalborg, Denmark, in 2010. He has been with Aalborg University since 2010, from where he obtained his Ph.D. degree in lifetime modelling of Lithium-ion batteries in 2014, and he is currently an Associate Professor with the Department of Energy Technology and the leader of the Battery Storage Systems Research program. He was a Visiting Researcher with RWTH Aachen, Germany, in 2013. He has co-authored over 90 journal and conference papers, most of them in topics related with Lithium-ion battery performance and lifetime modeling and battery state estimation. His current research interests are in the area of energy storage systems for grid and e-mobility, Lithium-based batteries testing and modelling, and lifetime estimation and diagnostics of Lithium-ion batteries.

Maciej Swierczynski – received his B. Tech. degree from AGH University of Science and Technology, Poland in 2005 and M. Tech degree from AGH University of Science and Technology, Poland, Cracow in 2007 in Computer Engineering for Industrial Applications and from Aalborg University, Denmark in 2009 in Power Electronics and Drives. In 2012, he completed his Ph.D. at Aalborg University, Denmark. Between 2013 – 2017, he worked as a postdoctoral researcher and Associate Professor at Aalborg University. In 2018, he moved to the industry where he is currently working in Lithium Balance A / S as R&D specialist. His area of research is in energy storage technologies for wind, EV and residential applications, battery management, testing, modeling and lifetime analyses. During his career, he published more than 90 conference and journal papers related to different aspects of battery electrical and thermal modeling, management, and lifetime estimation. Moreover, he has been an invited speaker at many battery related conferences and events. He is also lecturing battery related tutorials and courses.

Remus Teodorescu – received the Dipl.Ing. degree in electrical engineering from Polytechnical University of Bucharest, Romania in 1989, and PhD. degree in power electronics from University of Galati, Romania, in 1994. In 1998, he joined Aalborg University, Department of Energy Technology, power electronics section where he currently works as a professor. He is a Fellow Member of IEEE. Between 2013 and 2017, he has been a Visiting Professor with Chalmers University. He was the coordinator of Vestas Power Program (2007 – 2013, involving 10 PhD projects in the areas of power electronics, power systems and energy storage. His areas of interests are: MMC, design and control of power converters used in wind power systems, PV and HVDC / FACTS and smart energy storage systems based on Li batteries and multilevel converters.

ContentAmong the available energy storage technologies, Lithium-ion (Li-ion) batteries have detached as one of the few solutions, which are able to successfully meet the requirements imposed by both transportation sector and electrical grids. This has become possible thanks to the continuous research and development efforts, which have resulted in Li-ion batteries with high gravi-metric and volumetric energy density, high power capability during both charging and discharging operation, very high efficiency and long calendar and cycle lifetime. Subsequently, after dominating the portable electronics market, Li-ion batteries have become the key energy storage technology for propelling electric vehicles (EV, HEV, and PHEV), and they are entering the renewable energy storage sector (e.g., grid support applications, microgrids, renewables’ grid integration enhancement). Nevertheless, Li-ion batteries are highly non-linear systems with their performance behavior strongly influ-enced by the short-term and long-term operating conditions. Therefore, in order to ensure the technical and economic viability of a certain project, accurate knowledge about the behavior of the lithium-ion battery is de-manded by the industrial user for both short-term operation (seconds to hours – performance) and long-term operation (days to years – lifetime modeling).

The objective of this tutorial is to provide the audience with an extensive overview of the Li-ion battery energy storage technology, its operating principles, characteristics, advantages, and drawbacks. Furthermore, since many battery management system (BMS) diagnostic algorithms are based on battery performance models, an important part of the tutorial will be dedicated to the performance behavior of the Li-ion batteries; a deep understanding regarding the dependence of the battery performance parameters (e.g., capacity, power, resistance) on various parameters such as, temperature, load current, cycle depth, number of cycles etc. will be provided.

The second part of the tutorial will focus on the battery management systems and their most important roles: charge / discharge management, battery cell balancing, and monitoring to ensure safety protection. The tutorial will provide an extensive state of the art on the objectives and functionalities of the BMS. As BMSs are continuously developing, they will have new functionalities such as battery state-of-charge and state-of-health estimation and they will be used for diagnostics purposes. Thus, different methods for battery state-of-charge and state-of-health estimation will be discussed.

Finally, state-of-the-art power converters for Li-ion batteries will be discussed. Moreover, new solutions such as the Smart Modular Battery Package will be introduced; in this topology, individual battery cells are not connected directly in series (as in the traditional approach), but through individual DC-DC converters allowing flexibility in the individual loading of each cell. This provides many advantages such as more compact design due to the integration of battery management system (BMS) and battery charger by means of DC-DC converters, improved battery pack energy management and lifetime, and pos-sibility of bypassing underperforming or failing battery cells in battery packs.

Who should attend?The tutorial is mainly addressed to power electronics engineers who would like to learn more about the lithium-ion battery technology (characteristics, performance, lifetime) that is used for automotive and stationary applications, but also to battery specialists who would like to get know-how about power electronics solutions used for lithium-ion battery systems.

Tutorials Monday, 6 May 2019, 09:00 – 17:00Venue: Arvena Park Hotel Nuremberg, Görlitzer Str. 51, 90473 Nuremberg

16 | 17

The finalists are:

Traveling Wave Piezoelectric Transformer for Multi-Level Isolated Gate-Driver Power SupplyThomas Martinez, SATIE-Laboratory, F; Denis Labrousse, Francois Costa, ENS Cachan-SATIE, F; Dejan Vasic, Laboratoire SATIE, F; Gael Pillonnet, CEA, F

A 3.3kV 1000A High Power Density SiC Power Module with Sintered Copper Die Attach TechnologyKan Yasui, Seiichi Hayakawa, Takashi Ishigaki, Toshiaki Morita, Toshihito Tabata, Yuji Takayanagi, Yuta Inoue, Tatsunori Murata, Akiyoshi Tadano, Koyo Kinoshita, Masahiko Hoshi, Katsuya Koseki, Kohei Shono, Kanya Hamada, Takashi Imaizumi, Katsuaki Saito, Hitachi Power Semiconductor Device, J; Hiroyuki Matsushima, Hiroshi Miki, Toru Masuda, ToshiyukiKobayashi, Takashi Ando, Akitoyo Konno, Hitachi, J

Characterization of 1.7 kV SiC MOSFET / Si IGBT cross-switch hybrid on the LinPak platformSlavo Kicin, Munaf Rahimo, ABB Switzerland, CH; Francisco Canales, Jean-Yves Loisy, Stanislav Skibin, Umamaheswara Vemulapati, ABB Corporate Research, CH

High-Power SiC and Si Module Platform for Automotive Traction InverterJürgen Schuderer, Chunlei Liu, Niko Pavlicek, Giovanni Antonio Salvatore, Jean-Yves Loisy, Daniele Torresin,Thomas Gradinger, Fabian Mohn, Arne Schröder ABB Switzerland, CH; Andreas Apelsmeier, Audi, D

The finalists are:

GaN Based High-Density Unregulated 48 V to x V LLC Converters with = 98% Efficiency for Future Data CentersMohamed Ahmed, Virginia Polytechnic Institute and State University, USA; Fred Lee, Qiang Li, CPES, USA; Michael de Rooij, David Reusch, Efficient Power Conversion, USA

On the Thermal Performance of Si3N4-Based Ceramic Multilayer SubstratesTilo Welker, Markus Rüppel, Rainer Herrmann, Olivier Mathieu, Sebastian Polster, Andreas Meyer, Rogers Germany, D

Computer-Aided Design and Optimization of an Integrated Transformer with Distributed Air Gap and Leakage Path for LLC Resonant ConverterLukas Keuck, Joachim Böcker, University of Paderborn, D

Power Module Design for Utilizing of WBG Switching PerformanceKirill Klein, Klaus-Dieter Lang, Technical University of Berlin,D; Eckart Hoene, Fraunhofer Institute IZM, D

A 6.6kW High Power Density Bi-directional EV On-Board Charger Based on SiC MOSFETs Chen Wei, Cree, CN

Low Inductive SiC Mold Module with Direct Cooling Christoph Marczok, Eckart Hoene, Tina Thomas, Fraunhofer Institute IZM, D; Andreas Meyer, Karsten Schmidt, Rogers Corporation, D

Low Voltage Modular Multilevel Converter Sub-Module for Medium Voltage ApplicationsMilan Utvic, Drazen Dujic, Ignacio Polcano, Power Electronics Laboratory, EPFL, CH

Design and Verification of a Cascaded Advanced AC-Simulator with Virtual Output ImpedancePeter Jonke, Markus Makoschitz, Johannes Stöckl, Sumanta Biswas, Austrian Institute of Technology, A; Hans Ertl, Technical University of Vienna, A

Humidity Robustness of IGBT Guard Ring Termination Boni Boksteen, Charalampos Papadopoulos, Chiara Corvasce, Gontran Pâques, ABB Switzerland, CH

Decentralized Controller for the Cell-Voltage Balancing of a Multilevel Flying Cap ConverterMiguel Vivert, Pontifical Xavierian University, CO; Marc Cousineau, Philippe Ladoux, University of Toulouse, F; Joseph Fabre, LAPLACE laboratory, F

Highly-Efficient MHz-Class Operation of Boost DC-DC Converters by Using GaN Transistors on GaN with Reduced RonQossShinji Ujita, Hiroyuki Handa, Jongruey Yang, Daisuke Shibata, Masahiro Ogawa, Kenichiro Tanaka, Satoshi Tamura, Tsuguyasu Hatsuda, Panasonic, J

Investigating the Mold Compounds Influence on Power Cycling Lifetime of Discrete Power Devices Alexander Otto, Rainer Dudek, Ralf Döring, Sven Rzepka, Fraunhofer Institute ENAS, D

Hybrid Switch Capacitor and Synchronous Buck Topology Offers High Step-Down and High Efficiency ConversionBernhard Strzalkowski, Analog Devices, D; Jian Li, Analog Devices, USA

Adaptive Switching Sequence Selection in Space Vector Modulation of Buck-Type PWM RectifiersLorenzo Giuntini, ABB Industrial Solutions, CH

18 | 19Awards

This award is sponsored by:

These awards are sponsored by:

Young Engineer and Best Paper Award Finalists

The Young Engineer Award goes to the three best lectures from engineers not older than 35 years.

Best Paper Award Finalists

The Best Paper Award honours the best paper of the conference.

Tuesday, 7 May 2019, Room Brüssel 1, 09:45 hrs

Next Generation of Power Supplies

In today’s power electronics products, quality and reliability are given. Great emphases are placed on high efficiency, high power density and low cost. The current practice has reached a level of maturity that further advances will be closely linked to improvement in power devices, materials, and fabrication techniques. With recent advances in wide-band-gap (WBG) power semiconductor devices, namely, SiC and GaN, we have witnessed significant improvements in efficiency and power density while operating at a frequency an order of magnitude higher than the current practice using silicon counterparts. With this dramatic increased operating frequency, current design practices are challenged. Design trade off previously considered impractical or inconceivable can be realized not only with significant gain in efficiency and power density, but also drastic improvement of EMI / EMC and manufacturability. Several examples will be given to illustrate the potential impact of WBG devices in performance improvements and ease of manufacturability of future power electronics products.

Wednesday, 8 May 2019, Room Brüssel 1, 08:45 hrs

The Age of Optimization in Power Electronics

Due to the significant growth of renewables, worldwide installation of grid-tied converters is increasing rapidly. To cope with ever-increasing technical challenges in grid connection, recent advances in power electronics optimization in academia is being applied to industrial research as a backbone of developing high power density grid-tied converters. In this talk, in order to push the performance boundaries of the current technologies, the impact of each core technology (modulation, topology, magnetics, filter, and Si / SiC) on power densities of the grid-tied converters is explored, which lead to the future research directions with upcoming challenges.

Thursday, 9 May 2019, Room Brüssel 1, 08:45 hrs

GaN and Industry 4.0 – A Small Change that is Revolutionizing the Industry

As production becomes increasingly automated with a growing dependence on assembly line robotics, sensors and artificial intelligence, new challenges are arising for industrial businesses around capital costs, energy costs and the need for greater flexibility in the layout of the manufacturing floor plan. It is estimated that global industry already accounts for more than 40% of the world’s electricity use, and energy efficiency along with flexibility is becoming increasingly important considerations in the financial bottom line.Power and floor / cabinet space is expensive, but their costs can be reduced, and financial savings generated if motor drive systems are made smaller with increased energy efficiency, power output and function integration. As more of these systems are implemented on the factory floor in a decentralized manner, the ability to use longer and lower cost unshielded cables improves both the bottom line and facility design efficiencies. These automated sys-tems generate and capture increasingly large quantities of data, and data processing (servers and data centers) are increasingly under pressure to achieve greater energy efficiencies.

Speaker:Fred Lee, Virginia Tech, USAChairperson:Johann Walter Kolar, ETH Zürich, CH

Speaker:Jim Witham, GaN Systems, CNDChairperson:Jose Mario Pacas, University of Siegen, D

Speaker:Ki-Bum Park, ABB Switzerland. CHChairperson:Drazen Dujic, Power Electronics Laboratory, EPFL, CH

21 | 25

New:»Meet the Speaker«

Q&A Sessions with the Keynote Speakers.*

Keynotes

* Participants have the opportunity to get in touch with the keynote speaker of each conference day in a thirty-minute Q&A session. On-site, the first-come, first-served principle applies. Time and venue on page 06 / 07.

09:00 Room Brüssel 1 Conference Opening and Award Ceremony

09:45Room Brüssel 1 Keynote »Next Generation of Power Supplies«

Fred Lee, Virginia Tech, USA

10:30 Coffee Break

Conference Tuesday, 7 May 2019Morning Oral Sessions

12:40 Lunch Break

12:55-13:25Room Mailand »Meet the Speaker«

Q&A Session with the keynote speaker Fred Lee, Virginia Tech, USA

22 | 23

Room Brüssel 1

Special Session: Technologies for DC Grids

Chairperson: Drazen Dujic, Power Electronics Laboratory,

EPFL, CH

11:00Marine DC Power Distribution NetworksSeongil Kim, Gabriele Ulissi, Drazen Dujic, Power Electronics Laboratory, EPFL, CH; Soo-Nam Kim, Hyundai Electric & Energy Systems, KP

11:25Early Validation of Resonant DC-DC Converter for Wind Turbines Connected to MVDC GridsCatalin Gabriel Dincan, Philip Kjaer, Aalborg University, DK

11:50DC Grid Technology – Advances in Efficient Power Conversion, Multi-Node Control, and Medium Voltage DC Grid Design and Requirements for Planning and OperationPeter Luerkens, Rik W. De Doncker, Asimenia Korompili, Antonello Monti, Albert Moser, Jens Priebe, Johannes Voss, RWTH Aachen University, D

12:15MVDC Applications and TechnologyJürgen Steinke, Francisco Canales, Philippe Maibach, Gabriel Ortiz, Peter Steimer, ABB Switzerland, CH

Room München 2

Thermal Management

Chairperson: Uwe Scheuermann, Semikron Elektronik, D

11:00Accurate Prediction of Thermal Run-away at Blocking Conditions in Drives ApplicationsAlexander Philippou, Christian Müller, Franz-Josef Niedernostheide, Benjamin Sahan, Infineon Technologies, D

11:25On the Thermal Performance of Si3N4-Based Ceramic Multilayer SubstratesTilo Welker, Markus Rüppel, Rainer Herrmann, Olivier Mathieu, Sebastian Polster, Andreas Meyer, Rogers Germany, D

11:50Trend in Thermal Resistance of Advanced Power ModulesNobuyuki Shishido, Masanori Tsukuda, Green Electronics Research Institute, J;Shinichi Nishizawa, Kyushu University, J

12:15Redundant Liquid Cooled SiC Inverter with Highest Power-to-Weight Ratio for Electrical Drive ApplicationsStefan Pfefferlein, Alexander Hensler, Philipp Oschmann, Ewgenij Ochs, Siemens, D; Marco Übelacker, Brose, D

Room Brüssel 2

Advanced SiC MOSFET

Chairperson: Katsuaki Saito, Hitachi Power

Semiconductor Device, J

11:00Threshold Voltage Instability in SiC Power MOSFETsGiuseppe Consentino, Esteban Guevara, Luis Sanchez, Felice Crupi, University of Calabria, I; Susanna Reggiani, University of Bologna, I; Gaudenzio Meneghesso, University of Padova, I

11:25Study on Transient Light Emission of SiC Power MOSFETs Regarding the Sensing of Source-Drain Currents in Hard Switched Power Electronic ApplicationsJonathan Winkler, Jan Homoth, Holger Bartolf, Robert Bosch, D; Ingmar Kallfass, University of Stuttgart, D

11:50Challenging the 2D-Short Circuit Detection Method for SiC MOSFETsPatrick Hofstetter, Mark-M. Bakran, University of Bayreuth, D

12:15Characterization of the Parasitic Turn-On Behaviour of Discrete CoolSiC™ MOSFETsKlaus Sobe, Blaz Klobucar, Infineon Technologies, A;Thomas Basler, Infineon Technologies, D

Room Mailand

Magnetic Components

Chairperson: Wolfram Teppan, LEM Intellectual Property SAw

11:00Computationally Efficient Leakage Inductance Estimation of Multi- Winding Medium Frequency TransformersMarko Mogorovic, Drazen Dujic, Power Electronics Laboratory, EPFL, CH

11:25Computer-Aided Design and Optimization of an Integrated Transformer with Distributed Air Gap and Leakage Path for LLC Resonant ConverterLukas Keuck, Frank Schafmeister, Joachim Böcker, University of Paderborn, D; Herbert Jungwirth, Michael Schmidhuber, SUMIDA Components & Modules, D

11:50Simulation Methods for the Design of Power MagneticsBjörn Riemer, Michael Krajda, Tim Villbusch, Frank Bürvenich, Schaffner Germany, D

12:15Adaptation of the Jiles Atherton Model Based on Measurements on the Anhysteresis of Magnetic MaterialJörn Schliewe, Stefan Schefler, Matthias Köppen, Stefan Weber, TDK Electronics, D

Room München 1

DC-DC Hard and Soft Switched Converter I

Chairperson: Manfred Schlenk, Dr. Schlenk-Consulting, D

11:00Design of a High-Frequency DC-DC Converter with a Custom Power Module and Integrated Cooling StructuresAlexander Stippich, Lukas Fräger, Alexander Sewergin, Tobias Kamp, Rik W. De Doncker, RWTH Aachen University, D

11:25GaN Based High-Density Unregu-lated 48 V to x V LLC Converters with = 98% Efficiency for Future Data CentersMohamed Ahmed, Virginia Polytechnic In-stitute and State University, USA; Fred Lee, Qiang Li, CPES, USA; Michael de Rooij, David Reusch, Efficient Power Conversion (EPC), USA

11:50Partial-Load Optimization of a High-Voltage Residential Battery Converter with Silicon Carbide MOSFETsLeonhard Probst, Daniel von Kutzleben, Cornelius Armbruster, Christian Schöner, Fraunhofer Institute ISE, D

12:15Traveling Wave Piezoelectric Transformer for Multi-Level Isolated Gate-Driver Power SupplyThomas Martinez, Denis Labrousse, Francois Costa, Dejan Vasic, SATIE – Laboratory, FGael Pillonnet, CEA, F

Conference Tuesday, 7 May 2019Afternoon Oral Sessions

15:15 Coffee Break

15:15-17:15 Foyer Entrance NCC Mitte Poster / Dialogue Session

24 | 25

Room Brüssel 1

Special Session: Smart Functions in Power Electronics

Chairperson: Friedrich-Wilhelm Fuchs, Christian-Albrechts-

University of Kiel, D

14:00SmartIPM – Innovation by IntegrationChristian Daniel, Infineon Technologies, D

14:25Drive as a Sensor and Condition- Based MonitoringJörg Dannehl, Norbert Hanigovszki, Dwivedi Sanjeet Kumar, Danfoss Drives, DK; Martin Cerny, Danfoss, D

14:50Inverter Smart Operation: Combining Power Electronics and Internet TechnologyDavid Martini, ABB / Power One, I

Room München 2

Advanced Device Technologies

Chairperson: Nando Kaminski, University of Bremen, D

14:00Bidirectional Switch based on Silicon High Voltage Superjunction MOSFET and TVS Diode Used in Low Voltage DC Solid – State Circuit BreakerKenan Askan, Michael Bartonek, Eaton Industries, A;Franz Stueckler, Infineon Technologies, A

14:25Diamond Schottky Diode in a Non-Isolated Buck ConverterRichard Reiner, Verena Zürbig, Lucas Pinti, Philipp Reinke, Dirk Meder, Stefan Moench, Fouad Benkhelifa, Volker Cimalla, Rüdiger Quay, Christoph Nebel, Oliver Ambacher, Fraunhofer Institute IAF, D

14:50Short Circuit Detection Methods for Silicon Carbide (SiC) Power SemiconductorsMarco Liserre, Jonas Person, Markus Andresen, Christian-Albrechts-University of Kiel, D; Ole Mühlfeld, Tim Rettmann, Danfoss Silicon Power, D

Room Brüssel 2

Advanced IGBTs

Chairperson: Josef Lutz, Chemnitz University of Technology, D

14:00New 950-V IGBT and Diode Technology Integrated in a Low- Inductive ANPC Topology for Solar ApplicationsChristian Müller, Johannes Laven, Andressa Colvero Schittler, Infineon Technologies, D

14:251,700V 7th-Generation »X Series« RC-IGBT Modules for Industrial ApplicationsAkio Yamano, Hiroaki Ichikawa, Toru Ajiki, Yuichi Onozawa, Seiichi Takahashi, Makoto Isozaki, Soichi Okita, Shinichi Yoshiwatari, Yasuyuki Kobayashi, Fuji Electric, J

14:50Potential of Passive Feedbacks to Reduce Dynamic Current Imbalances of Paralleled IGBTsRobin Werner, Hans-Günter Eckel, University of Rostock, D; Jan Weigel, Jürgen Böhmer, Siemens, D

Room Mailand

Control Techniques and Electrical Drives

Chairperson: Walter Schumacher,

Braunschweig University of Technology, D

14:00Sensorless Predictive Speed Control of Permanent-Magnet Synchronous Generators in Wind Turbine ApplicationsMohamed Abdelrahem, Ralph Kennel, Technical University of Munich, D; Christoph Hackl, University of Applied Sciences Munich, D; Jose Rodriguez, University Andres Bello, RCH

14:25Design Study and Prototype of 150 kW Inverter with Discrete SiC MOSFETsTeresa Bertelshofer, Mark-M. Bakran, University of Bayreuth, D; Marco Denk, ZF Friedrichshafen, D

14:50The Four-Pole Planetary MotorRichard Spießberger, Andreas Brunner, Manfred Schrödl, TU Wien, A

Room München 1

DC-DC Hard and Soft Switched Converter II

Chairperson: Hubert Schierling, Siemens, D

14:00Cascaded Boost Converter to Achieve High Voltage Boost Rate – Conduction Loss AnalysisRyoga Kiguchi, Yasuyuki Nishida, Chiba Institute of Technology, J

14:25A DC-DC Converter Based on a Very High Frequency Power Tuned OscillatorCharley Lanneluc, Xavier Maynard, Rawad Makhoul, Pierre Perichon, CEA, F; David Frey, Pierre-Olivier Jeannin, Yves Lembeye, CNRS, F

14:50Conception and Command of a Three Phase Series Resonant Converter under Unbalanced ConditionBenjamin Loyer, Mickaël Petit, SATIE, F; Eric Laboure, GeePs, F

26 | 27Conference Tuesday, 7 May 2019, Poster / Dialogue Session15:15-17:15, Foyer Ground Floor NCC Mitte

High Power Semiconductors

Chairperson: Munaf Rahimo, MTAL, CH

Thyristors with Low Circuit Commutated Turn-Off Time for HVDC and FACTS Jan Vobecky, ABB Switzerland, CH

IGCTs in HVDC Systems: Analysis and Assessment of Losses Davin Guédon, Philippe Ladoux, University of Toulouse, F; Sébastien Sanchez, Laplace Laboratory, F; Mehdi Kanoun, EDF, F

High Voltage Thyristors with Self-Protection Elements in Cases Beyond Safe Operation Mode Dmitry Titushkin, Alexey Surma, Vladimir Verevkin, Konstantin Stavtsev, JSC Proton-Electrotex, RUS

High Current Welding Diodes: Impact of Silicon Wafer Thickness and Diffusion Profile on Forward Voltage Drop Adela Vosvrdova, libor Pina, Ladislav Radvan, ABB, CZ

Investigation of Power LTTs in Utmost Pulse Modes Aleksey Khapugin, Alexander Plotnikov, Valentin A. Martynenko, Alexey Grishanin, Vladimir Kartaev, Stanislav Kostritskii, PJSC Electrovipryamitel, RUS

High Reliability 6500V IGBT with Low-Stress Copper Metallization Hongxin Zhang, Yu Feng, Haihui Luo, Guoyou Liu, CanJian Tan, Xingyao Han, Jie Ding, Zhihui Tang, Honglu He, Zhaohai Pan, Zhu-zhou CRRC Times Electric, CN; Ian Deviny, Dynex Semiconductor, GB

Parallel Short-Circuits in Three-Level ANPC Converters David Hammes, Hans-Günter Eckel, Robin Werner, University of Rostock, D; Dietmar Krug, Siemens, D

Field Stop Press-Pack Diodes in Half Bridge Submodules for Increased Efficiency in MMC Applications Fabian Hohmann, Mark-M. Bakran, University of Bayreuth, D

Advanced IGBTs and MOSFETs

Chairperson: Ulrich Kirchenberger, STMicroelectronics, D

New, Best-In-Class 900-A 1200-V EconoDUALTM 3 with IGBT 7: Highest Power Density and Performance Klaus Vogel, Christoph Urban, Infineon Technologies, D

Low Loss 820A / 750V S3+ IGBT Module with New IGBT and Diode Technology for EV / HEV Application Yao Yao, Haihui Luo, Qiang Xiao, Zhonghua Zhang, Zhenhua Tan, Haibo Xiao, Rongzhen Qin, Xubin Ning, Ninghua Xu, CanJian Tan, Zhuzhou CRRC Times Electric, CN; Chunlin Zhu, Dynex Semiconductor, GB

Interaction of Power Module Design and Modulation Scheme for Active Neutral Point Clamped Inverters Andressa Colvero Schittler, Daniel Heer, Christian Müller, Infineon Technologies, D

Ultra-High Accuracy On-Chip Temperature Sensor in RC-IGBT Module for xEV Eri Ogawa, Tomoya Nakayama, Souichi Yoshida, Shunji Takenoiri, Masahito Otsuki, Fuji Electric, J; Steffen Ewald, Fuji Electric Europe, D

Packaging and Integration Technologies

Chairperson: Daniel Chatroux, CEA-LITEN, F

Power Module Design for Utilizing of WBG Switching Performance Kirill Klein, Klaus-Dieter Lang, Technical University of Berlin, D; Eckart Hoene, Fraunhofer Institute IZM, D

Interconnection Technology for 10kV SiC Power Module Cyrille Duchesne, Julie Tarrieu, Philippe Lasserre, DEEP Concept, F

An EMI Performance Improved Stacked Substrate Packaging Structure with Ultra-Low Parasitics for SiC Half-Bridge Power Module Yue Xie, Zhizhao Huang, Cai Chen, Yong Kang, Huazhong Univer-sity of Science and Technology, CN

Performance of a GaN Half Bridge Switching Cell with Substrate Integrated Chips Eduard Dechant, Norbert Seliger, University of Applied Sciences Rosenheim, D;Ralph Kennel, Technical University of Munich, D

Optimization for the Number of Parallel-Connected Switching Devices in High-Efficiency High-Power Converters Koroku Nishizawa, Tetsunori Kinoshita, Jun-ichi Itoh, Nagaoka University of Technology, J

Thermal Conductivity and Reliability of Al / C Composite for Cold Plates Katsumasa Hirose, Kazuhiko Minami, Shoichiro Wakabayashi, Ichiro Ota, Showa Denko, J

The Thermal and Mechanical Properties of Reinforced AlN with Metal Bonding Types Manseok Kwak, Kyong Hwan Kim, Myoung-Ki Joung, KCC, KPL

Bridging The Void Between Semiconductor Discretes and Modules in Automotive Traction Inverters Asantha Kempitiya, Wibawa Chou, Infineon Technologies, USA

High Temperature Packaging for SensorsLars Rebenklau, Fraunhofer Institute IKTS, D

Silver and Copper Sinter Technologies

Chairperson: Hans Ertl, Technical University of Vienna, A

High Temperature Wireless Packaging of SiC Power Device by Organic-Free die Attach Ag Sintering Lei Liu, Hui Ren, Guisheng Zou, Zhongyang Deng, Zhenyu Zhao, Tsinghua University, CN

Direct Bonding to Aluminum and Nickel Surfaces by Pressure Silver Sintering Ly May Chew, Wolfgang Schmitt, Heraeus Germany, D; Monique Dubis, Tamira Stegmann, Erika Schwenk, University of Applied Sciences Aschaffenburg, D

Thermal Management and Cooling

Chairperson: J. A. Ferreira, Delft University of Technology, NL

Thermal Conductivity and Interface Thermal Resistance Evaluation of DBC / DBA in Power Die Attach Modules Chuantong Chen, University of Osaka, J

Safe Operating Area of Medium-Power Discrete Rectifiers, a Key Differentiator in High Power Density Applications Reza Behtash, Tim Böttcher, Martin Röver, Olaf Vogt, Nexperia Germany, D

An Experimental Setup to Evaluate the Efficiency and Cooling Capability of IGBT and SiC Power Modules Simon Ravyts, Jeroen Zwysen, Giel Van den Broeck, Leonie Hallemans, Johan Driesen, KULeuven, B; Stephan Schlimpert, Flanders Make, B

Thermal Behavior of the High Power Automotive Dual Sided Cooled Module Udaykumar Vangaveti, Pradeep Kumar Tamma, John Mookken, ON Semiconductor, D

Online Junction Temperature Measurement via Internal Gate Resistance Using the High Frequency Gate Signal Injection Method Johannes Ruthardt, Kevin Muñoz Barón, Philipp Marx, Kanuj Sharma, Maximilian Nitzsche, Manuel Fischer, Jörg Roth-Stielow, University of Stuttgart, D

Using the Case Temperature to Identify the Cauer-Type Thermal Parameters of IGBT Module Xiong Du, Jun Zhang, Xiao Du, Wenshan Xiao, Rui Du, Jie Cai, Chongqing University, CN

Methods for Cooling Power Semiconductors in SMD Packages Jakub Jirsa, Jakub Hajek, STMicroelectronics, CZ

Enhanced Thermal Couple Term Model for Power Modules Henning Ströbel-Maier, Danfoss Silicon Power, D

Improving the Cooling Performance of Power Modules by Using Anisotropic Materials Shunsuke Kurahashi, Ichiro Ota, Yoshishige Okuno, Showa Denko, J

Simulation Analysis of Selective Cooling for Correcting Unbalanced Temperature of Multiple Power Dies in SiC Power Modules Sang Won Yoon, Sangyoo Lee, Hanyang University, ROK

Combined Solutions for Thermal Management and Electromagnetic Shielding Sebastian Mirasol-Menacho, Antonio Alcarria, Jorge Victoria, Würth Elektronik eiSos, D; Adrian Suarez, Pedro A. Martinez, Jose Torres, Julio Martos, Raimundo Olcina, Jesus Soret, ETSE University Valencia, E

A Long Duration Test-Bench for a 6.5kV RC-IGBT Full Bridge Inverter Julian da Cunha, Hans-Günter Eckel, Daniel Lexow, University of Rostock, D

The Influence of Aspects of Solder Paste Formulation and Soldering Process Factors on Voiding Under Large QFN Devices Rodrigo Aguilar, Henkel, F; Richard Boyle, Henkel, DIndirect On-State Voltage Estimation Using a Voltage Sensi-tive Electrical Parameter through the Gate Driver Julio Brandelero, Luis Maria Alonso, Jeffrey Ewanchuk, Stefan Mollov, Mitsubishi Electric, F

Estimating the Chip Temperature in an Inverter by Measuring the Temperature Sensitive Miller Plateau during Turn-Off Sebastian Hiller, Semikron, D; Jianjie Zhang, Josef Lutz, Technical University of Chemnitz, D

In-Situ Thermal Impedance Spectroscopy of Power Electronic Modules for Localized Degradation Identification Christoph van der Broeck, Sven Kalker, Rik W. De Doncker, RWTH Aachen University, D; Tomothy A. Polom, Robert D. Lorenz, University of Wisconsin-Madison WEMPEC, USA

Automotive and Electromobility

Chairperson: Pavol Bauer, Delft University of Technology, NL

GaN HEMT Based High Power Density Integrated Inverter for a Six-Phase Permanent Magnet Synchronous Motor without Forced Convection Zongheng Wu, Yi Zhang, Cai Chen, Han Peng, Yong Kang, Huazhong University of Science and Technology, CN

A Bi-Directional AC / DC Converter Design for Electric Vehicle Charging Application Using a Bi-Directional Fixed Frequency CLLC Converter Based on SiC Device Jianwen Shao, Guy Moxey, Wolfspeed, A Cree Company, USA; Binod Agrawal, Cree India, IND

A Modified 12-Pulse Three-Phase Bidirectional Dual Active Bridge DC-DC Converter for E-Vehicles Applications Eduardo Facanha de Oliveira, Peter Zacharias, University of Kassel, D

Multi-Engine in Modular Multilevel Converter Based Split Battery Systems for Electric Vehicles Manuel Kuder, Arthur Singer, Thomas Weyh, University of the Federal Armed Forces Munich, D

A 60kW, 0,6l SiC PowerCore with 5nH Total Commutation Inductance for Automotive Applications Nicola Burani, Roland Bittner, Alexander Wehner, Matthias Kujath, Sven Bütow, Semikron Elektronik, D; Serhij Matichyn, Matthias Köppen, TDK Electronics, D

Real Time Balancing for Modular Passive Battery Management System Francesco Porpora, Umberto Abronzini, Ciro Attaianese, Mauro Di Monaco, Giuseppe Tomasso, University of Cassino and Southern Lazio, I

A Novel DC-link Capacitor / Bus Design Accelerating the Performance of Danfoss’ 1.2kV SiC DCM1000X in a 200kW EV Traction Motor Drive Inverter Fabio Carastro, Danfoss Silicon Power, D; Michael Brubaker, SBE, USA

Common Mode Analysis of Non-Isolated Three-Phase EV-Charger for Bidirectional Vehicle-to-Grid Operation Benjamin Strothmann, University of Paderborn, D

Interaction of Inverter Performance and Selection Criteria for Paralleled Modules Matthias Wissen, Daniel Domes, Waleri Brekel, Infineon Technologies, D

ST’s MDmesh™ M6 Technology Improves Efficiency in LLC Resonant Half-Bridge Converters Filippo Scrimizzi, Alfio Scuto, Domenico Nardo, Simone Buonomo, STMicroelectronics, I

MDmesh™ DM6: The Latest Super-Junction MOSFET Technology with Improved Fast Recovery Diode Carmelo Parisi, Maurizio Melito, Filadelfo Fusillo, Domenico Nardo, STMicroelectronics, I

Evaluation of Low Voltage MOSFETs Optimised for Improved Current Sharing Steven Waterhouse, Ilian Bonov, Nexperia Semiconductors, GB

Intelligent Power Modules

Chairperson: Masahito Otsuki, Fuji Electric, J

New PFC Integrated Intelligent Power Module for Home Appliances Jaewook Lee, Taejin Lee, Junbae Lee, Daewoong Chung, Infineon Technologies, KP

IGBT Power Module with Integrated Current and Temperature Sensor for HEV / EV Traction Inverter Arun Kumar Sesha, John Mookken, Leon Zhang, ON Semiconductor, USA

High Efficiency Conversion for Supply the MCU Zdenek Pfof, ON Semiconductor, CZ

A New Generation of 600V Intelligent Power Module for the High Power Motor Drive Application Aster Park, Kim Tae-Hyun, ON Seminconductor, ROK; Seunghyun Hong, Taesung Kwon, Fairchild Korea Semiconductor, KP; Arnold Lee, ON Seminconductor, KP

Thermal Performance Comparison between New 650V Auto-motive Smart Power Module and Conventional Automotive Discrete IGBT David Jo, Song BK, Kangyoon Lee, Jang Shawn, Lee ByoungOk, Thomas Yim, ON Semiconductor, KP

A New Compact SMD-Type Intelligent Power Module for Motor Drive Applications Bum-Seok Suh, In Wha Jeong, Wanki Hong, Junho Lee, Jaesung Ko, Son Tran, Zhiqiang Niu, Alpha and Omega Semiconductor, USA

Development of Enhanced Interleaved PFC Boost Converter typed 650V Intelligent Power Module for HVAC Systems Kihyun Lee, Jinyong Jeong, ON Semiconductor, KP; Seunghyun Hong, Taesung Kwon, Fairchild Korea Semiconductor, KP

A New 1200V SiC MOSFET Intelligent Power Module Miran Baek, Minsub Lee, Soohyuk Han, Junbae Lee, Deawoong Chung, Infineon Technologies, KP

The Characteristics of Sintered Copper layer by Pressure Sintering Process forPower Module ApplicationShinichi Yamauchi, Kei Anai, Jung-Lae Jo, Takahiko Sakaue, Mitsui Mining & Smelting, J; J.Y. Chang, S.Y. Fun, K.H. Cheng, H.W. Cheng, H.H. Lin, W.K. Han, S.F. Hsu, C.M. Tseng, T.C. Chang, ITRI Industrial Technology Research Institute, CN

Sintering Cu Paste for Die-Attach Hideki Furusawa, JX Nippon Mining & Metals, J

Selective Silver Sintering on Organic-Based Circuit Boards Jonas Müller, Fabian Dresel, Martin März, Christoph Friedrich Bayer, Andreas Schletz, Fraunhofer Institute IISB, D; Michael Novak, Conti Temic microelectronic, D

Stable Microstructure and Mechanical Properties of Pressureless Sintered Silver at a Temperature of 250 ºC Masafumi Takesue, Tomofumi Watanabe, Keisuke Tanaka, Miki Matsui, Bando Chemical Industries, J

GaN Micro-Heater Chip for Power Cycling of Die Attach Modules with Ag Sinter Joint and High Temperature Solder Dongjin Kim, Shijo Nagao, Katsuaki Suganuma, Chuantong Chen, University of Osaka, J; Tetsu Takemasa, Senju Metal Industry, J; Yasuyuki Yamamoto, Tokuyama, J

Sintering Cu Paste on Cu Plates with Different Metallization Shuhei Takata, Chuantong Chen, Yue Gao, Katsuaki Suganuma, University of Osaka, J

Highly Reliable Package using Cu Particles Sinter Paste for Next Generation Power Devices Yue Gao, Chuantong Chen, Shijo Nagao, Katsuaki Suganuma, University of Osaka, J; Amir Sajjad Bahman, Francesco Iannuzzo, Aalborg University, DK

Reliability

Chairperson: Stéphane Lefebvre, SATIE, F

Fast Active Cycling Power Test Bench using Dedicated Modules Assemblies for Studying Wire Bond Ageing Guillaume Pellecuer, Jean-Jacques Huselstein, Francois Forest, André Chysochoos, University of Montpellier, F; Serge Bontemps, Microsemi Power Module Products, F

Technology Advances and Wear-out Evaluation of 3300V/1500A High-Power IGBT Module Yue Huang, Daohui Li, Haoze Luo, Helong Li, Fang Qi, Xiang Li, Yangang Wang, Dynex Semiconductor, UK

Reliability Considerations of High Power IGBT Modules under High Temperature / Humidity / Bias (HTHB) Condition Kongjing Li, Lee Coulbeck, Daohui Li, Mark Birkett, Haoze Luo, Helong Li, Yangang Wang, Dynex Semiconductor, GB; Xiaoping Dai, Guoyou Liu, Zhuzhou CRRC Times Electric, CN

Reliability Analysis and Optimization of Aluminum Bonding Wire for SiC Power Module with Stacked Substrates Yifan Tan, Cai Chen, Zhizhao Huang, Chi Zhang, Teng Liu, Yong Kang, Huazhong University of Science and Technology, CN

Development of TCT Life Prediction Model of Solder for Power Module Gary Chi, Ian Chen, Andy Liao, Delta Electronics, CN

Conference Tuesday, 7 May 2019, Poster / Dialogue Session15:15-17:15, Foyer Ground Floor Entrance NCC Mitte

Design of a GaN based CLLC Converter with Synchronous Rectification for On-Board Vehicle Charger Thorben Schobre, Konstantin Siebke, Regine Mallwitz, Technical University of Braunschweig, D

Interleaved Active Clamp Forward Converter as Highly Efficient Single Stage On-Board Battery Converter for EVs Philipp Rehlaender, Joachim Böcker, Frank Schafmeister, University of Paderborn, D; Tobias Grote, Delta Energy Systems, D

Evaluation of 800V Traction Inverter with SiC-MOSFET versus Si-IGBT Power Semiconductor Technology Stefan Hain, Marco Denk, Michael Meiler, ZF Friedrichshafen, D

Thermal Aspects of Designing a 48V 10KW Belt Starter Generator using LFPAKs Compared to Bare Die Clement Magnien, Mirela Soca, Nexperia Semiconductors, UK

Power Electronics in Transportation

Chairperson: Klaus F. Hoffmann, Helmut-Schmidt-University, D

Optimal Design Methodology of a Bidirectional Three-Phase CLLC Resonant Converter using Computer-Based Circuit Simulation Xiao Yu, Eduardo Facanha de Oliveira, Peter Zacharias, University of Kassel, D

DC-Bus Capacitors Influence in a GaN Motor Drive Inverter Charley Lanneluc, Dominique Bergogne, Pierre Perichon, CEA, F

Highly Efficient SiC Inverter for Aircraft Application with Innovative Thermal Management Florian Hilpert, Christian Bentheimer, Albanik Islami, Sandra Mainusch, Bernd Eckardt, Fraunhofer Institute IISB, D; Martin März, Friedrich-Alexander-University Erlangen-Nuremberg, D

ESPRIT Project: An Innovative Electric Car Sharing Solution Laurent Garnier, Julien Dauchy, Daniel Chatroux, Valery Cervantes, CEA, F

Supercapacitor-Based Energy Recovery System for Elevators with a Modular DC-DC Converter Kaspars Kroics, Riga Technical University, LV

Propagation Paths and Filter Methods for Common Mode (CM) Currents in Wireless Power Transfer Systems (WPT) for Electrical Vehicles (EV) Christof Ziegler, Stefan Weber, TDK Electronics, D; Georg Heiland, Finepower, D

A 50kW Fast Charger Based on a Series-Resonant Converter with Variable Input-to-Output Voltage Conversion Ratio Martin Nießen, Patrick Deck, Christian Peter Dick, Cologne Uni-versity of Applied Sciences, D; Marcus Conrad, AixControl, D

Investigation of New Battery Cells for Prospective Use in Electric Cars Ansgar Reuning, Andreas Lindemann, Otto-von-Guericke-University, D; Christoph Pohling, Bugatti Engineering, D

Smart Energy Management of Li-ion Battery / Supercapacitor Hybrid Energy Storage System for Electric Vehicle Applications Théophile Paul, INSA Strasbourg, F; Tedjani Mesbahi, Sylvain Durand, Damien Flieller, Wilfried Uhring, University of Strasbourg, F

Safety-Related Interfaces for Position Encoders – a Survey Timo Wilkening, Jens Onno Krah, Cologne University of Applied Sciences, D; Holger Goergen, SEW-EURODRIVE, D

Transfomers, Inductors, Capacitors

Chairperson: Yasuyuki Nishida, Chiba Institute of Technology, J

An Investigation in DC-link Film Capacitors for Reduced Parasitic Inductances Jasper Schnack, Ulf Schümann, Victor Golev, University of Applied Sciences Kiel, D; Regine Mallwitz, Technical University of Braunschweig, D

Novel Fit Formula for the Calculation of Hysteresis Losses Including DC-Premagnetization Erika Stenglein, Daniel Kübrich, Manfred Albach, Thomas Duerbaum, Friedrich-Alexander-University Erlangen-Nuremberg, D

Modelling of Frequency-Dependent Winding Resistance for Inductive Components Michael Schmidhuber, Andreas Marquardt, Manfred Wohlstreicher, Philemon Wrensch, SUMIDA Components & Modules, D

Calculation, Simulation and Production of PCB Integrated Inductors with Focus on Fringing Effect Gerald Weis, Ivan Salkovic, AT&S Austria, A

A Novel Design for a 3.6KW LLC Transformer with Tight Tolerance, Primary Side Concentrated Leakage Inductance to Replace a Discrete Resonant Inductor for Improved EV / HEV Onboard Charger Performance Gerard Healy, Pulse Electronics, IRL; Tyler Wang, Pulse Electronics, CN

High Frequency Inductor for GaN Applications: Construction Analysis and Efficiency Comparison John Gallagher, Pulse Electronics, CDN; Omara M Aziz, Pulse Electronics, D

Modeling Joule Losses in Planar Transformers Operating in High-Frequency Flyward Converter Lucas de Souza, Yves Lembeye, Jean-Paul Ferrieux, G2Elab, F; Bruno Cogitore, EXXELIA, F; Askeur Mimoun, VALEO, F

Premagnetization of High-Power Low-Frequency DC-Inductors in Power Electronic Applications Siqi Lin, Jens Friebe, Leibniz University Hannover, D; Sacha Lang-fermann, Michael Owzareck, BLOCK Transformatoren-Elektronik, D

Calculation Model for the Transient Voltage Distribution in Inductor Windings Effected by High dv / dt Lukas Reißenweber, Alexander Stadler, University of Applied Sciences and Arts Coburg, D

High Flux Density Amorphous Materials for High Frequency Power Applications Cathal Sheehan, Bourns Electronics, IRL; Hasan Ahmadian Baghbaderani, Ansar Masood, Zoran Pavlovic, Paul McCloskey, Tyndall National Institute, IRL

Design of an Unbalanced High Power Three-Winding Planar Transformer for Electric Vehicle Application Kelly Ribeiro de Faria, Larbi Bendani, VALEO, F; Gang Yang, Valeo-Siemens,F; Daniel Sadarnac, Mohammad Charif Karimi, Centralesupelec, F

Renewable Energy, Storage and Grid Control

Chairperson: Mike Meinhardt, SMA Solar Technology, D

Three Phase Semi-Z-Source Inverter for PV Applications Mohamed Abdelrahem, Ralph Kennel, Technical University of Munich, D; Mohamed Ismeil, South Valley University, ET; Mohamed Orabi, Aswan University, ET

Implementation and Design of an Autonomous Residential DC Nano-Grid Mohammed Azharuddin Shamshuddin, Ralph Kennel, Technical University of Munich, D; Sudhakar Babu Thanikanti, Ramachandaramurthy Vigna K, Tenaga National University, MAL

Comparative Analysis Between AC and DC Distribution Systems in a Photovoltaic System: A Case Study of a School in Ireland Meshari Alshammari, Maeve Duffy, National University of Ireland, IRL

Battery Energy Storage System to Provide Ancillary Services to the Grid with High Intermittent Electric Generation Penetration Felipe Marques, Sender Rocha dos Santos, Raul Fernando Beck, Juliana C. M. de Souza Aranha, Thiago Chiachio do Nascimento, Maria de Fatima Rosolem, Bruno Cesar de Camargo Angeli, CPqD, BR; Mauro Fernando Basquera, PHB Electronica, BR

Requirement Analysis of Circuit Breakers in Future Hybrid AC-DC Grids Marius Langwasser, Giovanni De Carne, Marco Liserre, Christian-Albrechts-University of Kiel, D; Thorsten Schindler, Aydin Boyaci, Christian Simonidis, Dietmar Gentsch, ABB, D; Horst Günter Bender, TenneT TSO, D

Investigation of Stability Issues in Droop-Controlled DC Microgrids with Intermediate Bus Architecture Leopold Ott, Matthias Schulz, Bernd Wunder, Fraunhofer Institute IISB, D; Martin März, Friedrich-Alexander-University Erlangen-Nuremberg, D

Bidirectional Bipolar Electronic Overcurrent Safety Elements for Bipolar DC Grids Matthias Schulz, Julian Kaiser, Kilian Gosses, Fraunhofer Institute IISB, D; Rafael Conz, Martin März, Friedrich-Alexander-University Erlangen-Nuremberg, D

Controlling Strategies for Meshed Offshore DC Collector Grids Steffen Menzel, René Reimann, Holger Raffel, Bernd Orlik, University of Bremen, D; Reinhard Kruse, wpd offshore solutions, D

Dimensioning and Lifespan Estimation of Electrolytic Capacitors in Industrial DC Micro Grids Simon Puls, Lenze SE, D; Johann Austermann, Holger Borcherding, University of Applied Sciences Ostwestfalen-Lippe, D

Demonstrator for Bipolar Point-to-Point DC Link with MMC Nikola Stankovic, Opal-RT Europe, F; Jerome Rivest, Opal-RT Technologies, CDN

28 | 29

30 | 31Conference Wednesday, 8 May 2019Morning Oral Sessions

08:45Room Brüssel 1 Keynote »The Age of Optimization in Power Electronics«

Ki-Bum Park, ABB, CH

09:30 Coffee Break

Room Brüssel 1

Automotive Power Converters

Chairperson: Marc Hiller, Karlsruhe Institute of Technology, D

10:00A 6.6kW High Power Density Bi-directional EV On-Board Charger Based on SiC MOSFETsChen Wei, Dongfeng Zhu, Haitao Xie, Wolfspeed, A Cree Company, CN; Jianwen Shao, Wolfspeed, A Cree Company, USA

10:25Optimization of Air-Cooled On-Board Battery Chargers for Electric Vehicles Using Wide Bandgap DevicesSilvia Zulk, Axel Mertens, Leibniz University Hannover, D

10:50Balancing Algorithms for Multi-Level Integrated Battery-Converters for EVAdrien Dittrick, SATIE, F

11:15Electro-Thermal Co-Design of A 250 kW Silicon Carbide Traction Inverter for Heavy Equipment ApplicationsYue Zhao, Alan Mantooth, Zhongjing Wang, University of Arkansas, USA; Muhammad Jahidul Hoque, Nenad Miljkovic, Nithin Vinod Upot, University of Illinois, USA; Brett Sparkman, John Fraley, Wolfspeed, A Cree Company, USA

Room München 2

New Packages

Chairperson: Frank Osterwald, Danfoss Silicon Power, D

10:00Low Inductive SiC Mold Module with Direct CoolingChristoph Marczok, Eckart Hoene, Tina Thomas, Fraunhofer Institute IZM, D; Andreas Meyer, Karsten Schmidt, Rogers Germany, GB

10:25Characterization of 1.7 kV SiC MOSFET / Si IGBT cross-switch hybrid on the LinPak platformSlavo Kicin, Francisco Canales, Jean-Yves Loisy, Stanislav Skibin, ABB Corporate Research, CH; Umamaheswara Vemulapati, Gernot Stampf, ABB Semiconductors, CH; Munaf Rahimo, MTAL,CH

10:50Development of a Novel 600V / 50A Power Package with Semiconductor Chips Sandwiched between PCB Substrates using Double-Side Ag-SinteringVladimir Polezhaev, Ankit Sharma, Till Huesgen, University of Applied Science Kempten, D; Alexander Schiffmacher, Lorenz Litzenberger, Jürgen Wilde, University of Freiburg,D

11:15High-Power SiC and Si Module Plat-form for Automotive Traction InverterJürgen Schuderer, Chunlei Liu, Niko Pavlicek, Giovanni Antonio Salvatore, Jean-Yves Loisy, Daniele Torresin,Thomas Gradinger, Fabian Mohn, Arne Schröder, David Baumann, ABB Switzerland, CH; Andreas Apelsmeier, Audi, D

Room Brüssel 2

Special Session: Safety in Motion

Chairperson: Jens Onno Krah, Cologne University of Applied Sciences, D

10:00Optimized Solutions for Safe Motion Control ApplicationsKarim Jamal, Texas Instruments, D; Mike Hannah, Texas Instruments, USA

10:25Safety Related Current Monitoring for Multiphase Motors built with Digital Current TransducersJens Onno Krah, Cologne University of Applied Sciences, D; Jürgen Koß, LEM Europe, D; Burkhard Köhler, Institut für Arbeitsschutz IFA /DGUV, D

10:50Design Single Chip Mixed Criticality Motion Systems with ZYNQ Ultrascale+ SoC SIL3 HFT=1 Giulio Corradi, Xilinx, D

11:15Use of Safety MCUs for Industrial and Automotive ApplicationsRoger Ungerer, NXP Semiconductors Germany, D

Room Mailand

Intelligent Gate Drivers

Chairperson: Mark M. Bakran, University of Bayreuth, D

10:00Simple Slew-Rate Control Technique Cuts Switching LossesWolfgang Frank, Infineon Technologies, D

10:25Communication Using the Isolated Power Supply of the Gate Drivers for SiC Semiconductors Monitoring ApplicationsJulien Weckbrodt, Nicolas Ginot, Christophe Batard, University of Nantes, F; Thanh Long Le, Safran Tech, F

10:50Centralized Short-Circuit Detection for Multiphase InvertersThomas Huber, Alexander Kleimaier, University of Applied Sciences Landshut, D; Ralph Kennel, Technical University of Munich, D

11:15A Predictive Model to Investigate the Effects of Gate Driver on dV / dt in Series Connected SiC MOSFETsPierre Lefranc, Luciano Alves, Pierre-Olivier Jeannin, Benoit Sarrazin, Van-Sang Nguyen, Jean-Christophe Crebier, G2Elab, F

Room München 1

High Voltage SiC

Chairperson: Gourab Majumdar, Mitsubishi Electric, J

10:00Ultra-High Voltage (40kV) Switches Implemented using SiC Super CascodesAnup Bhalla, Xueqing Li, Pete Losee, Melvin Nava, United Silicon Carbide, USA

10:252nd Generation High Performance 4H-SiC MOSFETs with 1.7 kV Rating for High Power ApplicationsKenichi Hamano, Masayoshi Tarutani, Yasu-nori Oritsuki, Toshikazu Tanioka, Masayuki Imaizumi, Naochika Hanano, Eisuke Suekawa, Mitsubishi Electric, J

10:50A 3.3kV 1000A High Power Density SiC Power Module with Sintered Copper Die Attach TechnologyKan Yasui, Seiichi Hayakawa, Takashi Ishigaki, Toshiaki Morita, Toshihito Tabata, Yuji Takayanagi, Yuta Inoue, Tatsunori Murata, Akiyoshi Tadano, Koyo Kinoshita, Masahiko Hoshi, Katsuya Koseki, Kohei Shono, Kanya Hamada, Takashi Imaizumi, Katsuaki Saito, Hitachi Power Semiconductor Device, J; Hiroyuki Matsushima, Hiroshi Miki, Toru Masuda, Toshiyuki Kobayashi, Takashi Ando, Akitoyo Konno, Hitachi, J

11:15All SiC Module with 2nd Generation Trench Gate SiC MOSFETs Mikiya Chonabayashi, Makoto Isozaki, Susumu Iwamoto, Hideaki Kakiki, Yasuyuki Kobayashi, Keishirou Kumada, Masayoshi Nakazawa, Norihiro Nashida, Keiji Okumura, Yusuke Sekino, Fuji Electric, J; Thomas Heinzel, Fuji Electric Europe, D

11:40 Lunch Break

11:55-12:25Room Mailand »Meet the Speaker«

Q&A Session with the keynote speaker Ki-Bum Park, ABB, CH

32 | 33Conference Wednesday, 8 May 2019Afternoon Oral Sessions

Room Brüssel 1

Automotive DC-DC Converters

Chairperson: Hans-Günter Eckel, University of Rostock, D

13:303.3kW High-Frequency Full-Bridge LLC DC-DC Converter with SiC MOSFETSYuequan Hu, Jianwen Shao, Wolfspeed/Cree, USA

13:55Development of Bi-Directional Isolated DC-DC Converter for Battery Test EquipmentBahram Ashrafinia, Roland Robrecht, Andreas Dahm, Markus Scherey, Digatron Industrie Elektronik, D

14:20Design of Integrated Inductors in Multi-Phase Buck / Boost Converters Including Operation with Deactivated PhasesWilly May, Johannes Pforr, Technical University of Ingolstadt, D

14:45An Interleaved DC-DC Converter for Automotive Applications with GaN Power SemiconductorsAnton Chupryn, Andreas Lindemann, Lars Middelstaedt, Otto-von-Guericke-University, D

Room München 2

Reliability

Chairperson: Frede Blaabjerg, Aalborg University, DK

13:30Defining the Ruggedness of Power MOSFETs used in Repetitive Avalanche for Automotive ApplicationsAndy Berry, Nexperia Semiconductors, GB; Wayne Lawson, University of Manchester

13:55VGE,th(T) and VCE(T)-Method to Measure the Cooling of an IGBT After Short Circuit in an InverterSebastian Hiller, Semikron, D; Josef Lutz, Jianjie Zhang, Technical University of Chemnitz, D

14:20Advanced Temperature Estimation in Low Rds,on p-GaN HEMT Devices for Performing Power Cycling TestsJörg Franke, Josef Lutz, Christian Bäumler, Danny Kretzschmar, Technical University of Chemnitz, D

14:45Investigating the Mold Compounds Influence on Power Cycling Lifetime of Discrete Power DevicesAlexander Otto, Rainer Dudek, Ralf Döring, Sven Rzepka, Fraunhofer Institute ENAS, D

Room Brüssel 2

High Power Converters

Chairperson: Johann Walter Kolar, ETH Zürich, CH

13:30Model-Based Synchronous Optimal Modulation for Three-Level Inverters Applied to Electrical Submersible Pumps SystemsMarcelo Lobo Heldwein, Federal University of Santa Catarinar, BRA; Lucio Steckling, UFSC, BR

13:55Submodule Capacitor Reduction for a 1-MVA SiC-Based Modular Multi-level Converter Motor Drive using High Frequency Common-Mode Voltage InjectionKarun Arjun Potty, He Li, Muneer Al-Sabbagh, Ziwei Ke, Jianyu Pan, Yue Zhang, Risha Na, Daniel Yue, Julia Zhang, Longya Xu, Jin Wang, The Ohio State University, USA

14:20Low Voltage Modular Multilevel Converter Submodule for Medium Voltage ApplicationsMilan Utvic, Drazen Dujic, Ignacio Polcano, Power Electronics Laboratory, EPFL, CH

14:45Generic Design and Implementation of Multi-Cell Multi-Phase Voltage Source InvertersThanh Hai Phung, Lyubomir Kerachev, Jean-Christophe Crebier, Sang Nguyen, CMP, F; Yves Lembeye, G2Elab, F

Room Mailand

Current Sensing

Chairperson: Eric Favre, IMI Precision Engineering, CH

13:30Applicability of New Current Sensing Techniques in Motor ControlFrank Lautner, Mark-M. Bakran, University of Bayreuth, D

13:55Novel Current Measurement Concept for Half Bridge Topologies Based on Simple-to-Implement Digital Current ObserverMohsin Ejaz Ahmad, Frank Schafmeister, Joachim Böcker, University of Paderborn, D

14:20Very Efficient Current Observer for Sigma Delta Modulation based Current Transducers for High Bandwidth Current ControlJens Onno Krah, Eduard Fitz, Cologne University of Applied Sciences, D; Pascal Maeder, LEM International, CH

14:45A Derivative Pulsed-Current Sensor and its Application for Protection and Monitoring of GaN HEMTsShmuel Ben-Yaakov, Ben Gurion University, IL; David Shapiro, Sharon Apter, VISIC Technologies, IL

Room München 1

GaN System Integration

Chairperson: Chris Rexer, ON Semiconductor, USA

13:30Efficiency Optimization in Highly Resonant Wireless Power SystemsMichael de Rooij, Yuanzhe Zhang, Efficient Power Conversion, USA

13:55Highly-Efficient MHz-Class Operation of Boost DC-DC Con-verters by Using GaN Transistors on GaN with Reduced RonQossShinji Ujita, Hiroyuki Handa, Jongruey Yang, Daisuke Shibata, Masahiro Ogawa, Kenichiro Tanaka, Satoshi Tamura, Tsuguyasu Hatsuda, Panasonic, J

14:20A 3-Phase T-Type 3-Level Inverter Using GaN Bidirectional Switch with Very Low On-State ResistanceHiroaki Ueno, Yusuke Kinoshita, Yasuhiro Yamada, Asamira Suzuki, Takashi Ichiryu, Masanori Nomura, Hideaki Fujiwara, Hidetoshi Ishida, Tsuguyasu Hatsuda, Panasonic, J

14:45System Integration Benefits in GaN Power ICMarco Giandalia, Dan Kinzer, Navitas Semiconductor, USA

15:15 Coffee Break

15:15-17:15 Foyer Entrance NCC Mitte Poster / Dialogue Session

34 | 35Conference Wednesday, 8 May 2019, Poster / Dialogue Session15:15-17:15, Foyer Ground Floor Entrance NCC Mitte

SiC Devices

Chairperson: Yoshiyuki Uchida, Japan Fine Ceramics, J

Fully Automated Measurement of Losses on Wide Bandgap Power Semiconductors Daniel Stracke, Matthias Klee, Axel Seibel, Fabian Schnabel, Marco Jung, Fraunhofer Institute IEE, D

Increased Short-Circuit Capability of SiC-MOSFET by Gate-Drive Unit Florian Störmer, Hans-Günter Eckel, Jan Fuhrmann, University of Rostock, D

Virtual Double Pulse Tests to Reduce Measuring Time and Effort in Semiconductor Modeling Daniel Goldmann, Marek Galek, Simon Schramm, University of Applied Sciences Munich, D; Hans-Georg Herzog, Technical University of Munich, D

A Multi-Dimensional Full Automatic Power Semiconductor Test Bench for Accurate Semiconductor Loss Calculation Fabian Stamer, Rüdiger Schwendemann, Marc Hiller, Karlsruhe Institute of Technology, D

Benefits and Advantages of Using SiC Salvatore La Mantia, STMicroelectronics, D; Vittorio Giuffrida, Simone Buonomo, STMicroelectronics, I

Suppressing Voltage Glitches in SiC MOSFETs Giuseppe Graziano Bonelli, STMicroelectronics, D; Anselmo Gianluca Liberti, Giuseppe Catalisano, STMicroelectronics, I

Improving Energy Efficiency in Industrial Drives using SiC MOSFETs Carmelo Parisi, Antonino Raciti, Angelo Sciacca, STMicroelectronics, I

Losses Measurements on a SiC Power Module Denis Labrousse, Stéphane Lefebvre, Mickaël Petit, Tien Anh Nguyen, Rita Mattar, ENS Cachan - SATIE, F; Christelle Saber, Cyrille Gautier, Safran, F

Fast and Accurate SiC MOSFET Compact Model for Virtual Prototyping of Power Electronic Circuits Paul Sochor, Andreas Hürner, Rudolf Elpelt, Infineon Technologies, D

Increase Switching Performance by Integrated SiRC Snubber in Direct Cooled SiC Power Module Tim Rettmann, Danfoss Silicon Power, D; Stefan Matlok, Fraunhofer Institute IISB, D; Roman Horff, Zollner Elektronik, D; Gerhard Woelfl, BMW, D

3.3 kV, 1200A Si-SiC Hybrid Technology using 1.7 kV SiC Diodes Yogesh Sharma, Paul Mumby-Croft, Yangang Wang, Ian Deviny, Thomas Roose, Dynex Semiconductor, GB

Switching Fast 1200V SiC Cascode with a Snubber Anup Bhalla, Ke Zhu, Jonathan Dodge, United Silicon Carbide, USA

Switching Characteristics of a 1.2 kV SiC MOSFET Module using a Controllable Current-Sourced Gate Driver Julius Wiesemann, Christian Sommer, Axel Mertens, Leibniz University Hannover, D

Control Design of Modular Self-Synchronizing AC- and DC-sided Parallel-Connected Three-Level NPC Inverters Jochen Staiger, Swen Bosch, Heinrich Steinhart, University of Aalen, D

Analysis of a Mixed Transfer Function and State Space Implementation of Cascade Control Simon Jung, Stefan Matlok, Bernd Eckardt, Fraunhofer Institute IISB, D; Martin März, Friedrich-Alexander-University Erlangen-Nuremberg, D

Investigation on Carrier Signals to Minimize the Overall Current Ripple of an Interleaved-Switched Inverter Manuel Fischer, Johannes Ruthardt, Maximilian Nitzsche, Jörg Roth-Stielow, Philipp Ziegler, University of Stuttgart, D

Performance Advantages of Quasi-Resonant Direct Conversion Techniques Phil Goff, Flex Power Modules, S; Mikael Appelberg, Flex Power Modules, GB

How to Drive 1.7kV SiC MOSFET in Industrial Power Supplies Using Standard PWM Controller Jakub Hajek, Jiri Smutka, David Kudelasek, STMicroelectronics, CZ

Power Supplies, DC-DC Converters

Chairperson: Petar J. Grbovic, University of Innsbruck, Innsbruck Power Electronics Lab. (i-PEL), AT

Energy Saving Techniques for Industrial Linear Power Amplifi-ers Vladan Lazarevic, Inigo Zubitur, Jesus A. Oliver, Pedro Alou, Jose A. Cobos,Technical University of Madrid, E; Miroslav Vasic, Eric Boere, Jens Eltze, Greg Patchin, Apex Microtechnology, USA

Hybrid Switch Capacitor and Synchronous Buck Topology Offers High Step-Down and High Efficiency Conversion Bernhard Strzalkowski, Analog Devices, D; Jian Li, Analog Devices, USA

Weight Reduction of DC-DC Converters Using Controllable Inductors Dennis Eichhorst, Jonas Pfeiffer, Peter Zacharias, University of Kassel, D

GaN Improves Efficiency of an Asymmetrical Half-Bridge PWM Converter with Synchronous Rectifier Benedikt Kohlhepp, Markus Barwig, Thomas Dürbaum, Friedrich-Alexander-University Erlangen-Nuremberg, D

Zero-Current-Switching Boost Converter Felix Himmelstoss, UAS Technikum Vienna, A; Karl Edelmoser, Technical University of Vienna, A

Resistance Control Network for a Wide-Range Input Voltage Resonant Series Converter Cédric Colonna, 3D Plus, F; Denis Labrousse, SATIE, F; Patrick Dubus, Powerlogy, F

High-Frequency GaN-Based QSW Buck Converter with Coupled Inductorand Integrated Current-Balancing Transformer for Battery Fast Charging Application Yi Dou, Ziwei Ouyang, Michael A.E Andersen, Technical Univer-sity of Denmark, DK

Digitally Adjustable Gate Resistor Concept for Automated and Time-Saving Switching Characterisation of Power Semi-conductors Michael Meissner, Sebastian Fahlbusch, Tobias Lipke,Klaus Hoffmann, Helmut Schmidt University, D

Optimized IGBT Turn-On Switching Performance Using The Full Device Safe Operating Area Christoph Lüdecke, Georges Engelmann, Rik W. De Doncker, RWTH Aachen University, D

Level-Shifter Current Influence to Power Loss of Gate Driver IC Jinsheng Song, Infineon Technologies, USA

Optimal Algorithm Design Based on a Digitalized Active Voltage Gate Driver for IGBT Turn-on Transition Chen Li, Zhiqiang Wang, Dalian University of Technology, CN; Kun Tan, Bing Ji, University of Leicester, GB

Practical Validation of a New Control Strategy for Wind Turbines by the Use of a Central PC for Model Calculation David Matthies, Wilfried Holzke, René Reimann, Holger Groke, Bernd Orlik, University of Bremen, D

UAC-106: Flexible Embedded Control System for Operation and Evaluation of Power Electronics Blake Nelson, Andrew Lemmon, Samuel Griffin, Chris New, Sergio Bacca Moreno, University of Alabama, USA

FPGA-Based Rapid Control Prototyping of Permanent Magnet Synchronous Motor Servo Drives Carlos Villegas, Speedgoat, CH; Sabin Carpiuc, The MathWorks, GB

Control Methods and Algorithms

Chairperson: Jacques Laeuffer, Dtalents, F

Design of State-Feedback Controller for a Single-Phase Grid-Connected Siwakoti-H Inverter with LCL Filter Mohamed Abdelrahem, Mirza Abdul Waris Begh, Eyke Liegmann, Ralph Kennel, Technical University of Munich, D; Akshay Mahajan, Aswin Palanisamy, Fraunhofer Institute ISE, D; Yam Siwakoti, Uni-versity of Technology Sydney, AUS; Petros Karamanakos, Tampere University of Technology, FIN

Efficiency and Motor-Performance Improvement Using WBG-Inverters with Observer-based Actively Damped LC-Sine Wave Filters Franz Maislinger, Hans Ertl, Technical University of Vienna, A; Goran Stojcic, Florian Holzner, B&R Industrial Automation, A

Voltage-Mode-Current-Control Concept for Current-Source Inverters in Grid Integration Borala Liyanage Lahiru Sandaruwan, Sunil Gamini Abeyratne, University of Peradeniya, CL; Ranmuni Thilesh Thanura De Silva, CodeGen International, CL

Comparison of Current Control Structures for Three-Phase Four-Wire Systems in Natural Frame Alejandro Tejero Revelles, Heinrich Steinhart, University of Aalen, D

Improving the Voltage Profile of a Medium Voltage Grid Using Distributed Generation Unitsr Dionisis Voglitsis, On Semiconductor, D; Georgios Adamidis,Xanthi, GR

Improvement of PV Grid Connected System Associated with Active Power Filter Based on Fuzzy-Predictive Direct Power Control Sabir Ouchen, Heinrich Steinhart, University of Aalen, D; Jean-Paul Gaubert, University of Poitiers, F; Mohamed Benbouzid, University of Brest, F; Frede Blaabjerg, Aalborg University, DK

High Power Converters

Chairperson: Yasuhiro Okuma, Fuji Electric, J

LCC Resonant Converter for Piezoelectric Transducers With Phase Shift Modulation Sven Bolte, Joachim Böcker, University of Paderborn, D

Characteristics and Design of a Resonant DC-DC Converter Based Modular Topology for Electric Vehicle Fast Charging Dimitar Arnaudov, Stoyan Vuchev, Technical University of Sofia, BG

Design and Verification of a Cascaded Advanced AC-Simulator with Virtual Output Impedance Peter Jonke, Markus Makoschitz, Johannes Stöckl, Sumanta Biswas, AIT Austrian Institute of Technology, A; Hans Ertl, Technical University of Vienna, A

8-Stage Pulse Generator for Bipolar Ground-Symmetric Operation Martin Sack, Martin Hochberg, Georg Mueller, Dennis Herzog, Karlsruhe Institute of Technology, D

High-Performance 300 kW 3-Phase SiC Inverter Based on Next Generation Modular SiC Power Modules Matthew Feurtado, Brice McPherson, Daniel Martin, Ty McNutt, Wolfspeed, A Cree Company, USA

Development of the Control System for Three-Phase Power Factor Corrector Dmitry Sorokin, Moscow Aviation Institute, RUS; Yury Skorokhod, Transconverter, RUS; Sergei Volskiy, Moscow State Aviation Institute Technical University, RUS

SiC MOSFET Switching Process Under the Influence of Shielded Motor Cables Robert W. Maier, Mark-M. Bakran, University of Bayreuth, D

Comprehensive Comparison of a SiC MOSFET and Si IGBT Based Inverter Maximilian Nitzsche, Manuel Fischer, Johannes Ruthardt, Jörg Roth-Stielow, University of Stuttgart, D; Christoph Cheshire, University of Applied Sciences Esslingen, D

Optimization of a 1 kW Resonant Converter Operating at 2.5 MHz Driving an Inductively Coupled Plasma Lamp Santiago Eizaguirre, Christoph Simon, Fabian Denk, Michael Heidinger, Rainer Kling, Wolfgang Heering, Karlsruhe Institute of Technology, D

MMC-Topology for High Current and Low Voltage Applications with Minimal Number of Submodules, Reduced Switching and Capacitor Losses Roland Unruh, Frank Schafmeister, Norbert Fröhleke, Joachim Böcker, University of Paderborn, D

Multi-Tap Bus Communication for Modular Power Converters with Distributed Isolation Martin Angerer, Adrian Amler, Martin März, Friedrich-Alexander- University Erlangen-Nuremberg, D; Benjamin Ruccius, Fraunhofer IISB, D

GaN Devices

Chairperson: Geraldo Nojima, Eaton Corporation, USA

Properties of a GaAs Power Rectifier Diode Module for Ultra-Fast Electric Vehicle Battery Charging Systems Thomas Blank, Bao Ngoc An, Matthias Luh, Benjamin Leyrer, Marc Weber, Karlsruhe Institute of Technology, D; Dai Ishikawa, Hitachi Chemical, J

GaN Based High Current Bidirectional DC-DC Converter for 48 V Automotive Applications Edward A. Jones, Suvankar Biswas, Michael de Rooij, John Glaser, Efficient Power Conversion, USA

Optimal GaN FET Scaling for Minimal Power Loss in High Step-Down Ratio Half Bridge Converters Jianjing Wang, Michael de Rooij, Edward A. Jones, Efficient Power Conversion, USA

A GaN-on-Si-Based Logic, Driver and DC-DC Converter Circuit with Closed-Loop Peak Current-Mode Control Michael Basler, Stefan Moench, Richard Reiner, Patrick Waltereit, Rüdiger Quay, Oliver Ambacher, Fraunhofer Institute IAF, D; Ing-mar Kallfass, University of Stuttgart, D

New Fast Short Circuit Detection Method for SiC and GaN HEMT Power Semiconductors Jan Schmitz, Markus Meißner, Felix Weiß, Steffen Bernet, Technical University of Dresden, D

Power Semiconductor Characterization Using Pulse S-Parameter Measurements Martin Hergt, Sebastian Nielebock, Siemens, D; Lukas W. Mayer, Siemens, A; Martin Sack, Marc Hiller, Karlsruhe Institute of Technology, D

New GaN Technology for Superior Efficiency in Electric Vehicles Filippo Scrimizzi, Giusy Gambino, Filadelfo Fusillo, STMicroelectronics, I

Drivers, Control ICs and Drive Strategies

Chairperson: Francisco Javier Azcondo, University of Cantabria, E

Gate Driving Circuit Design and Gate Driver Power Supply Structure for SiC MOSFETs Xuning Zhang, Gin Sheh, Sujit Banerjee, Littlefuse, USA

A Soft-Switching Gate Driver for SiC MOSFET Kihyun Kim, Jonghyun Kim, Kyoungho Lee, Korea Electrotechnology Research Institute, ROK

Short-Circuit Protection Circuit for SiC-MOSFETs Jonghyun Kim, Kyoungho Lee, Korea Electrotechnology Research Institute, ROK

Dynamic Current Boosting Technique of Flipped Voltage Follower for Low-Dropout Regulators Fatemeh Abdi, Yasin Bastan, Parviz Amiri, Shahid Rajaee Teacher Training University, IR; Manfred Reddig, University of Applied Sciences Augsburg, D; Ralph Kennel, Technical University of Munich, D

Analytical Modeling and Design of an Active Clamp Forward Converter Applied as Single Stage On-Board EV-Battery Converter Philipp Rehlaender, Frank Schafmeister, Joachim Böcker, Univer-sity of Paderborn, D; Tobias Grote, Delta Energy Systems, D

Analysis and Optimization of an Inverse Coupled Inductor in a High Frequency LLC Converter with Current Doubler Rectifier Sebastian Klötzer, Mathias Warncke, Klaus Hoffmann, Helmut Schmidt University, D

AC-DC and DC-AC Converters

Chairperson: Serge Bontemps, Microsemi PMP Europe, F

GaN-Based High-Frequency Inverter for Highly-Dynamic Ultra-Low Ripple Applications Arne Hendrik Wienhausen, Philipp Kienscherf, Rik W. De Doncker, RWTH Aachen University, D

GaN High Density 300W AC-DC Converter Tom Ribarich, Stephen Oliver, Navitas Semiconductor, USA; Peter Bredmeier, ONgineer, D

Electromagnetic Emissions by Three Different Concepts of Bidirectional Multi-Phase SiC DC-DC Boost Converters Karl Oberdieck, Arne Hendrik Wienhausen, Alexander Sewergin, Alexander Stippich, Jochen Henn, Rik W. De Doncker, RWTH Aachen University, D

EMI Filter for an Application with High Common Mode Cur-rents – a Case Study Wulf Günther, Simon Reinhardt, Acal BFi Germany, D

A Detailed Study of the Switching Transients in Power Modules to Reduce EMI in Industrial Drive ApplicationsHadiuzzaman Syed, Vincotech, D

High Voltage and Low Current High Power LED LLC Driver by Stacking Single Ended Rectifiers using a Balancing Capacitor KangHyun Yi, Daegu University, KP

Control of a SiC 2.5 MHz Resonant Full-Bridge Inverter for Inductively Driven Plasma Christoph Simon, Santiago Eizaguirre, Fabian Denk, Michael Heidinger, Rainer Kling, Wolfgang Heering, Karlsruhe Institute of Technology, D

Ultrasound Piezo-Harvester Energy Transfer Systems for Machine Tool Sensor-Charger Applications Lucas Mendonça, Fraunhofer Institute EAS, D; Fábio Bisogno, Federal University of Santa Maria, BR; Dirk Killat, Brandenburg Technical University Cottbus, D; Matthias Radecker, Fraunhofer Institute IIS / EAS, D

Low Cost 50W Class EF2 PA for Magnetic Resonance Wireless Power Transfer Applications Paul Wiener, Tiefeng Shi, GaN Systems, USA

Comparison of Converters with Constant Output Power for Wireless Power Transmission Nikolay Hinov, Dimitar Arnaudov, Technical University of Sofia, BG; Nikolay Madzharov, Technical University of Gabrovo, BG

36 | 37

Motors and Motor Control

Chairperson: Gianmario Pellegrino, Politecnico di Torino, I

An Advanced Filtering Method for Partial Discharge Measurement in the Presence of High dV / dt Markus Fürst, Mark-M. Bakran, University of Bayreuth, D

Impact of Inverter Harmonics on the Winding Losses of a PMSM Marco Wassmer, University of Applied Sciences Northwestern Switzerland, CH

New Concept for a Flexible Transport System Based on Transverse Flux Linear Machines Jannik Ulbrich, Sören Behrens, Holger Raffel, Bernd Orlik, University of Bremen, D

Dynamic and Robust Control of a 5-DoF Active Magnetic Lorentz-Force Bearing for Space Applications Sören Behrens, Jannik Ulbrich, Holger Raffel, Bernd Orlik, University of Bremen, D

A Detailed Investigation of the DC-Link Voltage Ripple in Battery- Fed PWM Inverter Systems Panagiotis Mantzanas, Daniel Kuebrich, Thomas Duerbaum, Friedrich-Alexander-University Erlangen-Nuremberg, D;Alexander Bucher, Alexander Pawellek, Christian Hasenohr, Harald Hofmann, Valeo Siemens eAutomotive Germany, D

Comparison of Online Inertia Identification Methods for Permanent Magnet Synchronous Motor Tao Liu, Gerd Griepentrog, Ziqiang Ye, Technical University of Darmstadt, D

Asymmetric Three-Phase Operation of Fault-Tolerant Inverters for Increased Output Torque of Electric Machines Johannes Häring, Michael Gleißner, Mark-M. Bakran, University of Bayreuth, D

Sensorless Control of a Planetary Motor Andreas Brunner, Richard Spießberger, Manfred Schrödl, TU Wien, A

Combination of SVPWM Switching States as Transient Excitation for Saliency-Based Induction Machine Control Markus A. Vogelsberger, Bombardier Transportation, A; Eduardo Rodriguez Montero, Hans Ertl, Thomas Wolbank, Vienna University of Technology, A

Improving the Dynamic Behavior of Sensorless Control for Induction Machines Using Magnetic Anisotropies Henning Sauerland, Bernd Orlik, University of Bremen, D

Modeling and Control of a Chain Scraper for Mining Applications Matthias Joost, Wilfried Holzke, Holger Raffel, Bernd Orlik, University of Bremen, D; Uwe Dahlmann, Willi Paasch, Breuer-Motoren, D

Power Interface Communication – Electronic Type Plate for Sensorless Motors Lukas Dick, Jens Onno Krah, Cologne University of Applied Sciences, D

Sensors, Measurement

Chairperson: Enrique J. Dede, University of Valencia, E

Control Hardware and Suitable Current Sensors for Fast Switching SiC DC-DC Converters Alexander Sewergin, Arne Hendrik Wienhausen, Sebastian Blasius, Rik W. De Doncker, RWTH Aachen University, D

Transient Current Sensors for Wide Band Gap Semiconductor Switching Loss Measurements Sebastian Sprunck, Manuel Münch, Peter Zacharias, University of Kassel, D

A »Plug and Measure« Device for Junction Temperature Monitoring in Real Converter Environments Tobias Kestler, Mark-M. Bakran, University of Bayreuth, D

Synchronization of a Distributed Measurement System René Reimann, Wilfried Holzke, Steffen Menzel, Bernd Orlik, University of Bremen, D

Calorimeter for Loss Determination of Power Electronic Circuits – a Novel Approach with Reduced Measurement Time Marco Schilling, ISLE Steuerungstechnik und Leistungselektronik, D; Ulf Schwalbe, Robert Bosch, D

Current Measurement of GaN Power Devices using a Frequency Compensated SMD ShuntMarkus Meißner, Jan Schmitz, Felix Weiß, Steffen Bernet, Technical University of Dresden, D

New Experimental Verification of Transformer Core Saturation Occuring in Forward Converters Due to Remanence Flux Density Erika Stenglein, André Scheder, Daniel Kübrich, Manfred Albach, Thomas Duerbaum, Friedrich-Alexander-University Erlangen-Nuremberg, D

Calorimeter for Exact Determination of the Power Loss Fabian Schnabel, Marco Jung, Fraunhofer Institute IEE, D

Power Quality and EMC

Chairperson: Philip C. Kjaer, Vestas Wind Systems, DK

Multi-Terminal DC Fault Current Estimation Including the Influence of Superconducting Fault Current Limiters Marius Langwasser, Giovanni De Carne, Morten Fischer, Marco Liserre, Christian-Albrechts-University of Kiel, D; Matthias Biskoping, ABB, D

High-Order Harmonics of the AC-DC Converter, Generated During the Intermittent and Continuous Operation of GaN-HEMT Power Switches Vladimir Vukic, Jovan Mrvic, University of Belgrade, SRB; Vladimir Katic, University of Novi Sad, SRB

Conducted EMC Emission of a PWM Full Bridge Inverter Using Silicon Carbid MOSFETs in High Temperature Environments Felix Bröcker, Klaus Hoffmann, Helmut Schmidt University, D; Heiko Solmecke, Markus Grimmig, Jenoptik Advanced Systems, D

A Comparative Study of SPICE models for an SiC-MOSFET Yasushige Mukunoki, Masayoshi Tarutani, Hiroshi Nakatake, Tomohide Terashima, Takeshi Horiguchi, Mitsubishi Electric, J

Design of High Power Planar Magnetics for a 1.8KW Phase Shifted Full Bridge Converter Using Advance FEA Electromagnetics Tools David Munguia, Pulse Electronics, USA; Gerard Healy, Pulse Electronics, IRL

Average Modelling and Small Signal Characterization of a ZVS Clamp-Switch Boost Converter Burkhard Ulrich, Baden-Wuerttemberg Cooperative State University Stuttgart, D

Measuring Parasitic Resistance of Resonant Converters Output Capacitor through Transfer Functions Julian Dobusch, Thomas Dürbaum, Friedrich-Alexander-University Erlangen-Nuremberg, D

Pantographs Bounce Modelling for the Simulation of Railway Systems Saba Amirdehi, Johana Vally, Didier Colin, ALSTOM Transport, F; Baptiste Trajin, Paul-Etienne Vidal, Frédéric Rotella, University of Toulouse, F

Distributed Simulation of Wind Farm Grids Wilfried Holzke, David Matthies, Bernd Orlik, University of Bremen, D

Benchmark Study on Impedance Identification Methods for Grid Connected Converters Marko Petkovic, Drazen Dujic, Power Electronics Laboratory, EPFL, CH

Studying the Generated Communication Traffic from Power Electronic Devices Ivan Nedyalkov, Alexey Stefanov, South-West University »Neofit Rilski«, BG; Georgi Georgiev, Union of Electronics, Electrical Engineering and Telecommunications (CEEC), BG

Conference Wednesday, 8 May 2019, Poster / Dialogue Session15:15-17:15, Foyer Ground Floor Entrance NCC Mitte

38 | 39Conference Thursday, 9 May 2019Morning Oral Sessions

08:45-09:30Room Brüssel 1 Keynote »GaN and Industry 4.0 – A Small Change that is Revolutionizing the Industry«

Jim Witham, GaN Systems, USA

09:30 Coffee Break

Room Brüssel 1

High Voltage IGBTs

Chairperson: Peter Steimer, ABB Switzerland, CH

10:00Enhancing Short-Circuit Capability of High-Performance IGBTs by Gate-Drive UnitJan Fuhrmann, Julian da Cunha, Hans-Günter Eckel, Robin Werner, University of Rostock, D

10:25Humidity Robustness of IGBT Guard Ring TerminationBoni Boksteen, Charalampos Papadopoulos, Chiara Corvasce, Gontran Pâques, ABB Switzerland, CH

10:50New 6.5kV / 1000A Module with LOCOS Trench Oxide IGBT Chips and Design Variation for Traction and HVDC ApplicationsLuther-King Ngwendson, Owen Basset, Mark Birkett, Mark Briggs, Lee Coulbeck, Ian Deviny, Tony Garraway,John Hutchings, Chris Kong, Imran Saddiqui, Jim Thomson, Yangang Wang, Chunlin Zhu, Dynex Semiconductor, GB

11:15High Power Density Oscillation Free 1800A / 3300V E2 IGBT Module with TMOS+ IGBT and PIC FRD TechnologyXubin Ning, Haihui Luo, Yao Yao, Rongzhen Qin, Qiang Xiao, Feiyu Zhou, CanJian Tan, Yuan Teng, Pengfei Liu, Haibo Xiao, Zhuzhou CRRC Times Electric, CN; Ian Deviny, Luther-King Ngwendson, Dynex Semiconductor, GB

11:40Novel 550A_3300V Module with IGBT4 and .XT Technology in XHP3 Package to Enhance Power Density and Lifetime for Next Generation Power ConvertersVishal Jadhav, Ulrich Schwarzer, Sven S. Buchholz, Waleri Brekel, Infineon Technologies, D

Room Mailand

Power Quality and EMC

Chairperson: Klaus Marahrens, SEW-EURODRIVE, D

10:00EMC Improvement with New Architectures of Gate Drivers for SiC MOSFET DevicesLuciano Alves, Pierre Lefranc, Pierre-Olivier Jeannin, Benoit Sarrazin, Van-Sang Nguyen, G2Elab, F

10:25Multi-cell DC-DC Converters - Input Differential Mode Filtering Generic Design Rules and ImplementationThéo Lamorelle, Jean-Christophe Crebier, Yves Lembeye, G2Elab, F; Sang Nguyen, CMP, F

10:50Input Filter Protection in Current Source RectifiersLorenzo Giuntini, ABB Industrial Solutions, CH

11:15A Novel Approach to Reduce EMI in Switched-Mode Power Supplies Operating at Fixed Switching FrequenciesFlorian Hubert, Thomas Dürbaum, Philipp Dorsch, Stefan J. Rupitsch, Friedrich-Alexander-University of Erlangen-Nuremberg, D

11:40Design of a Hybrid Common – Mode EMI Filter for Traction Inverters in Electrical VehiclesDenis Müller, Michael Beltle, Stefan Tenbohlen, University of Stuttgart, D; Konstantin Spanos, Robert Bosch, D

Room München 1

Special Session: Smart Transformers

Chairperson: Marco Liserre, Christian-Albrechts-University of Kiel, D

10:00Requirements for Smart TransformerMarco Liserre, Rongwu Zhu, Christian- Albrechts-University of Kiel, D

10:25Solid State Transformers with SiC Building BlocksRavi Raju, General Electric, USA

10:50Power Electronic Traction Transformers in 25 kV / 50 Hz Systems: Optimisation of DC / DC Isolated Converters with 3.3 kV SiC MOSFETsFlorent Morel, Alexis Fouineau, Laboratoire Ampère, F; Philippe Ladoux, University of Toulouse, F; Caroline Stackler, Piotr Dworakowski, Nathan Evans, François Wallart, Supergrid Institute, F

11:15100kW Bi-Directional DC-DC Converter Utilising SiC MosfetsJamie Lamb, David Gurwicz, Nigel Jakeman, Andrew Tenwick, Turbo Power Systems, GB

11:40Technical Requirements and Challenges for Grid Applications of Smart TransformersMarius Langwasser, Christian-Albrechts- University of Kiel, D; Ali Kazerooni, WSP, GB

Room München 2

Control Methods for Power Converters

Chairperson: Marcelo Lobo Heldwein, Federal University of Santa Catarinar, BRA

10:00Decentralized Controller for the Cell-Voltage Balancing of a Multilevel Flying Cap ConverterMiguel Vivert, Pontificia Universidad Javeri-ana, CO; Marc Cousineau, Philippe Ladoux, University of Toulouse, F; Joseph Fabre, LAPLACE laboratory, F

10:25Predictive Resonant Converter for Computing ApplicationsXiaomin Wu, Tobias Raimar, ON Semiconductor, D; Alessandro Zafarana, ON Semiconductor, I

10:50Model-Based Control of an Inverter for Wide Range Soft-Switching OperationFelix Manthey, Anton Gorodnichev, Eivind Langnes, Georg Pangalos, Frerk Haase, Fraunhofer Institute ISIT, D

11:15Continuously Variable Controlled Transformer for Grid Voltage StabilizationBernhard Girardi, Kurt Schenk, NTB, CH

11:40Adaptive Switching Sequence Selection in Space Vector Modulation of Buck-Type PWM RectifiersLorenzo Giuntini, ABB Industrial Solutions, CH

12:05 Lunch Break

12:20-12:50Room Mailand »Meet the Speaker«

Q&A Session with the keynote speaker Jim Witham, GaN Systems, CDN

40 | 41Conference Thursday, 9 May 2019Afternoon Oral Sessions

Room Brüssel 1

GaN Devices

Chairperson: Thomas Neyer, ON Semiconductor, D

14:00Improvements on Dynamic On-State Resistance in Normally-off GaN HEMTsCarsten Kuring, Sibylle Dieckerhoff, Technical University of Berlin, D; Marvin Tannhäuser, Siemens, D

14:25Reliability Test Results of PCB Soldered GaN GIT DevicesRoman Boldyrjew-Mast, Josef Lutz, Jörg Franke, Danny Kretzschmar, Technical University of Chemnitz, D

14:50GaN-GIT Power Transistor Switching Behavior and Application in a Motor Drive InverterMichael Lutz, Jörg Weiß, Siemens, D; Josef Lutz, Technical University of Chemnitz, D

15:15The Effect of Dynamic On-State Resistance to System Losses in GaN-based Hard-Switching ApplicationsRuoyu Hou, Juncheng Lu, GaN Systems, CDN

Room Mailand

Power Modules Design

Chairperson: Andreas Lindemann, Otto-von-Guericke- University Magdeburg, D

14:00Pin-Fin Design and Optimization for Direct Cooling of Electric-Vehicle Traction InvertersThomas Gradinger, Daniele Torresin, ABB Switzerland, CH

14:25Comparative Study on the Dynamic Behavior of Next Generation IGBT Modules and Freewheeling Diode OptimizationUwe Schilling, Peter Beckedahl, Semikron, D

14:50Parasitics Optimization for GaN HEMTs in Conventional Housing- Type Power ModulesJuncheng Lu, GaN Systems, CDN

15:15Retro-Fitting Wide Band Gap Devices to Classic Power Modules using Silicon RC SnubbersStefan Matlok, Norman Boettcher, Bernd Eckardt, Tobias Erlbacher, Philipp Hörauf, Markus Jahn, Fraunhofer Institute IISB, D

Room München 1

AC-DC and DC-AC Converters

Chairperson: Peter Wallmeier, Delta Energy Systems, D

14:00Design Considerations of a Single Stage LLC Battery ChargerWenqi Zhou, Robert Bosch, D; Martin Wattenberg, Robert Bosch Center for Power Electronics, D; Ulf Schwalbe

14:25Experimental Evaluation of Boost and Flyback based Resistor Emulators for Ferroresonance Damping in Isolated Neutral MV Distribution GridsFrancisco Azcondo, Eduardo Bayona, Raquel Martínez, Mario Manana, Alberto Pigazo, University of Cantabria, E; Rafael Minguez, Viesgo, E

14:50Converter Loss Evaluation of Flyback Converter Applying Power Decoupling Capability with ZVS OperationHiroki Watanabe, Jun-ichi Itoh, Nagaoka University of Technology, J; Shinichiro Nagai, Naoki Koike, Pony Electric, J

15:15Combining the Benefits of SiC T-MOSFET and Si IGBT in a Novel ANPC Power Module for Highly Compact 1500-V Grid-Tied InvertersBenjamin Sahan, Andre Lenze, Christian Müller, Slawinski Maximilian, Infineon Technologies, D

Room München 2

Chip Bond Technologies

Chairperson: Peter Kanschat, Infineon Technologies, D

14:00Failure Mechanisms of Sintered Die Top Systems under Power Cycling TestsAndreas Hinrich, Heraeus Germany, D; Nan Jiang, Josef Lutz, Technical University of Chemnitz, D; Benjamin Fabian, Anna Wolf, Marko Kalajica, Andreas Klein, Heraeus; D; Anton Miric, Heraeus Materials Technology, D; Martin Becker, Danfoss Silicon Power, D

14:25Reliability of SiC MOSFET with Danfoss Bond Buffer in Automotive Traction Power ModulesAlexander Streibel, Martin Becker, Ole Mühlfeld, Danfoss Silicon Power; D; Jeffrey Casady, Brett Hull, Shadi Sabri, Wolfspeed, USA; Daniel J. Lichtenwalner, Cree, USA

14:50Relationship Between Bonding Properties and Porosity of Sintered Cu BondingHideo Nakako, Dai Ishikawa, Yoshinor Ejiri, Chie Sugama, Yuki Kawana, Motohiro Negishi, Yuichi Yanaka, Hitachi Chemical, J

15:15Silver Alloy Wire Bonding Interconnection Technology used in Power ModuleKazuhiko Sakutani, Satoshi Kondo, Taketoshi Shikano, Koji Yamazaki, Mitsubishi, J

42 | 43Industry ForumHall 7 Booth 543

E-Mobility ForumHall 6 Booth 322

Tuesday, 7 May 2019

10:15 Next-Generation Power Electronics by Advanced Semiconductor and Device Technologies, Fraunhofer IAF

11:00 SiC Power MOSFETs – Application Specific Portfolio Extension, Infineon

12:00 Get Going with GaN, Power Systems Design

13:00 SiC and GaN Impact on Traditional Si Power Electronics Industry, Yole Développement

13:30 New Thinking Leads to Smaller Inductors and High Efficiency at High Frequency, Coilcraft Europe

14:00 Solutions for Special Measurement Applications (100kA, 100MW, etc.), DEWESoft

14:45 Thermal Resistance of Interconnect Layers in Inverter Power Stack Assembly, MacDermid Alpha Electronics Solutions

15:15 Next Generation of Power Supplies, Virginia Tech

15:45 Automotive Power Module Qualification Guideline AQG324 - The Success Story Continues, AQG 324

Wednesday, 8 May 2019

10:00 SiC Power MOSFETs – Application Specific Portfolio Extension, Infineon

10:45 EV / HEV Transformation of the Power Modules Industry, Yole Développement

12:15 Automotive Qualified Power GaN FETs – Critical to xEV Adoption, Nexperia

12:45 A Comparison between NPC and ANPC 3 Level Topologies, Semikron Elektronik

13:30 SiC – Devices are Mature, A Media, Bodo’s Power Systems

14:30 GaN – Devices are Mature, A Media, Bodo’s Power Systems

15:30 Optimization of Power Electronics for Grid-Tied Converter, ABB Switzerland

Thursday, 9 May 2019

10:00 SiC Solutions for Industrial and Automotive Applications, ROHM Semiconductor

11:00 GaN and Industry 4.0 – A Small Change that is Revolutionizing the Industry, GaN Systems

11:30 Einführung Students Day, ECPE European Center for Power Electronics

12:30 What is the Impact of Battery, Power Electronics and Electric Motor Global Trends on the EV / HEV Industry?, Yole Développement

13:00 SiC Power MOSFETs – Application Specific Portfolio Extension, Infineon

13:45 Next-Generation Power Electronics by Advanced Semiconductor and Device Technologies, Fraunhofer IAF

14:30 Solutions for Special Measurement Applications (100kA, 100MW, etc.), DEWESoft

15:30 Verlosung Students Day ECPE European Center for Power Electronics

Tuesday, 7 May 2019 and Wednesday, 8 May 2019

10:00 Elektromobilität wird alltagstauglich: High Power Charging mit bis zu 500 kW, Phoenix Contact Deutschland

10:30 Advanced Functional Safety in Battery Management Systems, Rutronik

11:00 Optimising Battery Performance in xEVs, Schunk

11:30 High-Voltage Contactor Series for High-Voltage DC Switching Applications, TDK Electronics

14:00 Assembly Technologies of Power Modules – Challenges and Solutions, Semikron

14:30 ROHM Power Device Solutions for E-mobility, ROHM Semiconductor

15:00 Power Semiconductor Solutions for Vehicle Electrification Beyond the Powertrain, Infineon

15:30 Semiconductor and Module Packaging Technologies to Address xEV Power Applications, On Semiconductor

Thursday, 9 May 2019

10:00 SiC Power Semiconductor Modules for 250 kW Converters – The Next Generation of E-mobility, ABB Switzerland – Semiconductors

10:20 Next Gen Automotive Power Modules: DCM Platform by Danfoss Silicon Power, Danfoss Silicon Power

10:40 Battery Protection and Related Power Management: DC Fuse, Pyro-Fuse, Busbar and Beyond, Mersen France SB

11:00 High Performance Magnetic Solutions for E-mobility, VACUUMSCHMELZE

11:20 Ladeinfrastruktur für Flottenbetreiber – Komponenten und Datenmanagement, AixControl

11:40 The Design and Development of a 20kw Transformer for an Automotive Application, Bourns Sensors

12:00 Near Field Radiation Causes, Effects & Suppression Techniques of Power Inductors in Power Electronic Systems, WÜRTH ELEKTRONIK eiSos

12:20 Technologies for Electric Vehicles and Maritime Applications, Fraunhofer Institute for Energy Economics and Energy System Technology

12:40 The Impact of Solder Alloy Integrity in Power Electronics, Indium Corporation of Europe

13:00 Erfolgskriterien bei der elektrischen Leistungsmessung, Yokogawa Deutschland

13:20 Advanced Tool Chain for Developing and Testing Controllers for Electromobility Applications, dSPACE

13:40 Multilayer Ceramic Cubstrates: A Key Technology to Enable High Power Efficiency, Rogers Germany

14:00 Embedding of Power Semiconductors Changes the Game – a Leap Forward Instead of Gradual Improvements, Schweizer Electronic

14:20 650V GaN Technology for a New Generation of OBCs, DC / DCs and Inverters in EVs, VISIC Technologies

14:40 Optimal Trajectory Control for Isolated Bidirectional Resonant DC-DC Converters, Applied Micro Electronics AME

15:00 3D-gedruckte Flüssigkeitskühler zur Kühlung von Bauteilen der Leistungselektronik, IQ evolution

As of March 2019 / subject to change without notice As of March 2019 / subject to change without notice

Partner

44 | 45List of ExhibitorsAt PCIM Europe 2019, more than 470 exhibitors from 27 nations showcase products and services as well as the most recent innovations in the fields of power electronics, intelligent motion, renewable energy and energy management.

Mecc. AL IMentor a Siemens Business GBMersen FMEV Elektronik Service DMicrochip Technology DMicrometals USMinDCet BEMitsubishi Electric Europe DMitsubishi Materials JMitsui Mining & Smelting JMJC Elektrotechnik DMS Power DMulti Measuring Instruments JMurata Electronics Europe NLMyrra Deutschland D

N

NAGASE DNanjing Chieful Science & Technology CNNantong Guanyouda Magnet CNNeoGraf Solutions USNexperia NLNGK Europe DNHK Spring Europe DNingbo Degson Electrical CNNippon Chemi-Con JNippon Rika Industries DNORWE DNucletron Technologies D

O

OMICRON Lab ATON Semiconductor GBOPAL-RT EUROPE FOsterrath DOupiin Enterprise TW

P

PADA Engineering IPanasonic Industry DPARKER OVERSEAS INPETERCEM FPFARR STANZTECHNIK DPHOENIX CONTACT DPI SM DPiciesse Elettronica IPikatron DPLANSEE ATPlexim CHPMK Mess- & Kommunikationstechnik DPOCO CNPOLFER Podzespoly Indukcyjne PLPossehl Electronics DPower Coils IPower Design Technologies FPower Electronic Measurements GBPower Integrations DPOWERSEM DPOWERSYS FPPI Adhesive Products DPPM – Pforzheimer Präzisions Mechanik DPRAX ESPRECISION ELECTRONIC COMPONENTS INPREMO ESPre-Switch USAdvanced Techne Priatherm IPrima Electro IPromet CHTH Proton-Electrotex RUPulse Electronics DPulse Magnetic & Power Electronics INPVA TePla Analytical Systems D

R

RECOM Power ATRichardson RFPD Germany DROGERS Germany DRohde & Schwarz DROHM Semiconductor DRSG Electronic Components D

DEWETRON DDiabatix BEDiamond Electric JDiotec Semiconductor DTCL Elektronika GBHengdian Group DMEGC Magnetics CNDOWA HD Europe DdSPACE DDSW Elektronik DDucati Energia IDYNETICS DDynex Semiconductor GB

E

EAGLERISE ELECTRIC & ELECTRONIC CNShanghai EAGTOP Electronic Technology CNEBG Elektronische Bauelemente ATEBV Elektronik DECOMAL Europe DECPE European Center for Power Electronics e.V. Decs Beratung & Service DEfficient Power Conversion USEgrtech IRLEICHHOFF Kondensatoren DEK Power Solutions SElectrohms INElectronic Concepts IRLELECTRONICON Kondensatoren DElectrovipryamitel RUELEKTRISOLA Dr. Gerd Schildbach DELSCHUKOM DET System electronic DETAL SExagan FExxelia F

F

F & K DELVOTEC Bondtechnik DFachhochschule Kiel DFair-Rite Products USXiamen Faratronic CNFERROXCUBE Deutschland DFERYSTER PLFinepower DFischer Elektronik DFlux DKFMV DFormFactor USFraunhofer Institut für Integrierte Systeme und

Bauelementetechnologie IISBD

Fraunhofer-Institut für Zuverlässigkeit und Mikrointegration IZM DFraunhofer-Institut für Energiewirtschaft und Energiesystemtechnik IEE DFrizlen DFuG Elektronik DFuji Electric Europe D

G

G.O. Engineering DGaN Systems CAGemballa Electronics DGeneral Components Industry TWGLYN DGooge Thermal Cooling Technology CNGT elektronik DGuangdong Fengming Electronic Tech CNGuangdong Huayu Electronic CNGvA Leistungselektronik D

H

HAHN DHangzhou Xenbo Heat transfer Science & Technology CNPTR HARTMANN DHE System Electronic DHEDRICH DHEIDEN power DHelix Semiconductors USHeng Sheng Electronic Ceramics CNHenkel DHeraeus Electronics DHero Magnetic Development CN

RTDS Technologies CARubadue Wire USRUSALOX RURutronik Elektronische Bauelemente DRUTTONSHA INTERNATIONAL RECTIFIER IN

S

Samwha Europe DSanRex Europe FISANSHO SHOJI JSAXOGY – POWER ELECTRONICS DSBA-TrafoTech DSBE USSchmidbauer Transformatoren und Gerätebau DSCHROEDER + BAUER Werkzeugbau Stanztechnik DSchukat electronic DSchulz-Electronic DSchunk Sonosystems DSchweizer Electronic DSeifert electronic DSekels DSEMIKRON International DSensitec DSensor-Technik Wiedemann DSentec E&E TWSerigroup ISERTO DShandong DTT-First Electronic CNFoshan City Shunde District ShengYe Electrical CNShenzhen Belta Electronics CNShenzhen BYD Microelectronics CNShenzhen ChuangShiDing Electronics CNShenzhen Spitzer Electronic CNShenzhen Weidy Industrial Development CNShinenergy Technology CNSIBA DSiebel Elektronik DNanjing SilverMicro Electronics CNSINUS Electronic DSIRECTIFIER ELECTRONICS TECHNOLOGY CNSIRIO ELETTRONICA ISK Electric Europe NLSMP Sintermetalle Prometheus DSpecial-Ind DSpeedgoat CHSpitzenberger & Spies DStandexMeder Electronics DStarpower Europe CHFranz Steger Transformatorenbau DSTMicroelectronics CHStrohhekerSchulz DSTS DSUMIDA Components & Modules DSumitomo Electric Industries JBeijing Sunking Power Electronic Technology CNSuperGrid Institute FSusumu Deutschland DSuzhou ANSAS semiconductor CNSVM IN

T

Taiwan Chinsan Electronic Industrial TWTAMURA ELSOLD DTamura-Europe GBTDG CNTDK Europe DTech Mount TWTech Semiconductors CNTECNOAL ITektronix DTeledyne LeCroy DTermoresine ITHALES DMS FRANCE FTHORA Elektronik DTianchang Fuan CNTianjin Century Electronics CNTigris Elektronik DTokyo Cosmos Electric JToshiba Materials J

HF Instruments DHGPower DHimag Planar Magnetics GBHIOKI EUROPE DHitachi Chemical Europe DHitachi Europe GBHitachi Metals Europe Dhivolt.de DHöganäs SOy Hollmén FIHottinger Baldwin Messtechnik DHubei Ruiyuan Electronic CNHunan Aihua CNHVP High Voltage Products DHVR International DBruker Hydrostatic Extrusions GBHY-LINE Power Components D

I

I.C.E. IIC Teplocom RUICAR IICEL IIEEE Power Electronics Society USimec BEIndium GBIneltron DInfineon Technologies Dinpotron Schaltnetzteile DInPower Systems DIntego DInTiCa Systems DINVACU BGIQ evolution DIsabellenhütte Heusler DIskra Mehanizmi SIItelcond I

J

J&D Electronics KRJentech Precision Industrial TWJFE Steel JJianghai Europe DJGD Semiconductor CNJohanson Dielectrics USJovil Universal USJunior Kühlkörper D

K

Kapteos FKaschke Components DKawaso Texcel JKCC KRKEMET Electronics USKendeil IKeysight Technologies DKLEINER Stanztechnik DKOA Europe DLeopold Kostal DKRAH DKUK coils CH

L

Johann Lasslop DLCP Laser-Cut-Processing Dlean transformers DLEM Europe DLittelfuse Europe DLS Mtron KR

M

MacDermid Alpha Electronics Solutions GBMacMic Science & Technology CNMagDev GBMagna-Power Electronics DMagnetec DMagnetics USMalico TWMarini Mario IMaxQ Technology USMB Electronic D

Toyochem Jtrafomodern Transformatorengesellschaft ATTRAMAG Transformatorenfabrik D

U

UniTemp DUTK Component I

V

VACUUMSCHMELZE DVinatech KRVincotech DVishay Europe DVISIC Technologies IL

W

WAGO Kontakttechnik DThomas Waidner DWARMES DWDI DWeEn Semiconductors GBWeidmüller Interface DWell Ascent Electronic CNWEVO-CHEMIE Dwidap electronic components DWieland-Werke DWIMA DWolverine USwts // electronic components DWÜRTH ELEKTRONIK eiSos DWürth Elektronik ICS DWuxi CRE New Energy Technology CN

X

Xiamen HDS Trade CN

Y

Yangzhou Kaipu Electronics CNYangzhou Pairui CNYokogawa D

Z

Zeasset Electronic Technology CNZES ZIMMER Electronic Systems DZEZ SILKO CZZhejiang Huajing Rectifier CNZurich Instruments CH

A

A.L.M.T. JABB Switzerland CHAdvanced Cooling Technologies USAdvanced Technology & Materials CNAgileSwitch USAIC Europe DAIT Austrian Institute of Technology ATAixControl DAKG Thermotechnik International Dalfatec DAllegro MicroSystems Europe GBAlpha and Omega Semiconductor USAlutronic Kühlkörper DAmantys Power Electronics GBAmosense KRAMS Technologies DAmulaire Thermal Technology TWAMX AUTOMATRIX IAnalog Devices DAperam Alloys Amilly FApex Microtechnology USApplied Micro Electronics AME NLArcel FAsahi Kasei Microdevices Europe DASM Assembly Systems DAtherm FATV Technologie DAUREL IAurubis Stolberg Dausterlitz electronic DAUXEL FAVX GB

B

Arthur Behrens DBeijing CreativeMix Electronic CNBeijing Deepcool Industries CNBeijing Victory Electric CNBINDER tecsys DBLOCK Transformatoren-Elektronik DBose Research INBourns Sensors DBROXING CH

C

Caltest Instruments DCefem Power FCEJN-Product DCeramTec DCergen Technology CNChang Sung KRChangzhou Tiger Electronic Materials Technology CNChina Amorphous Technology CNCISSOID BECleverscope NZC-MAC Electromag BECMC Klebetechnik DCME Control Motion Electronics DCMP FCobontech KRCOILCRAFT EUROPE GBColumbia-Staver GBConstellium Singen DCool Tec Electronic DCOOLTECH ICoorsTek DCosmo Ferrites INCPS Technologies USCTX Thermal Solutions DCYG Wayon Circuit Protection CNDDACO Semiconductor TWDanfoss Silicon Power DDanotherm Electric DKdataTec DDenka Chemicals DDEWESoft D

As of March 2019 / subject to change without notice

46 | 47General Information

VenueThe seminars and tutorials from 5 – 6 May 2019 will take place at the Arvena Park Hotel, Görlitzer Str. 51, 90473 Nuremberg, phone: +49-911-89220.

The conference from Tuesday, 7 – 9 May 2019 will take place at the Conference Center Mitte, NürnbergMesse, Otto-Bärnreuther-Strasse, 90471 Nuremberg.

AccommodationFor hotel booking please contact the hotel directly.PCIM Europe Head Quarter HotelHotel Arvena ParkGörlitzer Str. 51D-90473 NürnbergPhone: +49 911 89 22 0info@arvenapark.de

Registration Counter Opening hoursArvena Park HotelSunday, 5 May 2019 from 13.00 until 17.00Monday, 6 May 2019 from 8.00 until 14.00

NCC Mitte, NürnbergMesseMonday, 6 May 2019 from 16.00 until 18.007 – 9 May 2019 from 8.00 until 17.00

Questions?Ms. Donata PfenderPhone: +49 711 61946-503donata.pfender@mesago.com

Travel

There are several non-stop flights to Nuremberg daily. In addition, Nuremberg’s closeness to international airports such as Frankfurt, Munich, Zurich, Amsterdam or Paris ensures optimum connections to the intercontinental flight network. The airport is close to the city with direct underground and taxi connections to the exhibition centre. The underground takes you in 20 minutes from the airport to the exhibition centre. Journey time from the airport to the exhibition centre is approximately 15 minutes by taxi and costs about 25 EUR.

You can reach Nuremberg’s main train station ‘Nürnberg Hauptbahnhof’ conveniently from every German city with the following trains: ICE, IC or EC. There are also frequent train connections from major European cities, such as Paris, Brussels, Zurich, Vienna, Amsterdam or Prague. From ‘Nürnberg Hauptbahnhof’ the underground U1 or U11 (direction: ‘Langwasser Süd’) will take you directly to the exhibition centre in only 8 minutes. By taxi you reach the exhibition centre within 10 minutes.

Nuremberg is centrally located in the South of Germany. Its excellent connections to the European motorway and direct feeder roads make it easy and convenient to reach the exhibition centre by car. Destination address for your navigation system: NürnbergMesse, Karl-Schönleben-Str., Messeplatz 1, 90471 Nuremberg

Until 14 March 2019

From 15 March 2019

These are per named delegate as follows:

One Conference Day 690 EUR 790 EUR

Two Conference Days 1,120 EUR 1,220 EUR

Three Conference Days 1,330 EUR 1,430 EUR

Tutorial Full Day 690 EUR 790 EUR

Seminar Half Day 345 EUR 395 EUR

University Staff* 940 EUR 940 EUR

Students 40% Discount 40% Discount

Exhibitor special rate** 290 EUR 290 EUR

* University staff and students may only register for the full conference at a reduced rate and must enclose a copy of their university ID-card. A student discount of 40% is available upon re-quest. This discount cannot be combined with the University Staff Fee. Please contact Ms. Donata Pfender at Donata.Pfender@mesago.com for registration.

** A transferable ticket valid for the three keynote presentations including the conference proceedings is only available to PCIM Europe 2019 exhibitors. A special registration is required.All fees plus 19% VAT. On-site Registration: please add 30 Euro per participant. Please note that cash payments are not possible. Payment by credit card only.

Registration InformationRegistration Fees

Registration and terms and conditions at

pcim-europe.com

Further information at

pcim-europe.com

48 | 49Room Plan PCIM Worldwide

26 – 28 June 2019, Shanghai, Chinapcimasia-expo.com

5 – 7 May 2020, Nuremberg, Germanypcim-europe.com

Save the date!

Organizer

Mesago Messe Frankfurt GmbHRotebuehlstr. 83 – 8570178 Stuttgart

Karl-Schönleben-Straße Karl-Schönleben-Straße

Otto-Bärnreuther-Straße

Münchener Straß

e

WestEinfahrt . Access

OstEinfahrt . Access

Betriebs-hof

Messepark

U-Bahn / SubwayMesse

S 9

S 5/6

S 6/7S 8/9

S 1Mitte

S 9Mitte

Operation Center

Service-Center Mitte

Rotunde

ServicePartnerCenter

ParkhausParking

Ost

Süd-Ost 2

VIP Ost 2

VIP Ost 1

Süd-Ost 1

Ost

Parking Conference

VIP West/ Mitte

NCCMitte

NCC West Franken-halle

NCCMitte

NCCMitte

NCC Ost

50 100m0

12

3

4

5

6

789

7A

4A

3A3C

12

11 10

OstEingangEntrance

MitteEingangEntrance

NCC Mitte, Level 0Halle 12Hall 12

Rotunde

Nizza

FoyerBrüssel/

München

Brüssel

Halle 10Hall 10

NCC West

Nizza

FoyerBrüssel/

München

Brüssel

Service-CenterMitte

Hall 9

Hall 1

NCC WestEingangEntrance

Venedig

Frankenhalle

NCC MitteEntrance

NCC Mitte

PosterSession

ConferenceLunch

Service 9Mitte

NCC Mitte, Level 1Halle 12Hall 12

Presse Center West

Madrid

Frankenhalle

Hall 9

Piazza

VIP

München

FoyerBrüssel/

München

Brüssel

Hall 10

NCC West

Rotunde

Mailand

Verona

Lissabon

Basel

Athen

Nizza

1 2

12

Advisory Board/ Speaker‘s Room

Entrances and ServicesPCIM Europe 2019 Conference

Exhibition Centre Nuremberg

ConferenceCounter

SMTconnect 2019

Twitter along with us

#pcimeurope