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Report on Reflective Sensor

Description

The HOA1405 series consists of an infrared emitting diode and an NPN silicon

phototransistor encased side-by side on converging optical aes in a blac! thermoplastic

ho"sing# The phototransistor responds to radiation from the $%&' only (hen a reflective

ob)ect passes (ithin its field of vie(# The HOA1405 series employs an $% transmissive filter

to minimi*e the effects of visible ambient light and to provide a smooth optical face (hich

prevents the acc"m"lation of airborne contaminants in the optical path# The HOA1405 series

contains plastic mo"lded components# +or additional component

$nformation see ,&P505 and ,'P405#

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Silicon Phototransistor

Description

The ,'P405 is an NPN silicon phototransistor transfer molded in a T-1 clear

plastic pac!age# Transfer molding of this device ass"res s"perior optical centreline

performance compared to other molding processes# .ead lengths are staggered to provide a

simple method of polarity identification#

Infrared Emitting Diode

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Description

The ,&P505 is a galli"m arsenide infrared emitting diode transfer molded in a T-1 red

plastic pac!age# Transfer molding of this device ass"res s"perior optical centerline

performance compared to other molding processes# .ead lengths are staggered to provide a

simple method of polarity identification#

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Product Specifications

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prototype reflective sensor

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