Nte 2636

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    NTE2636Silicon NPN Transistor

    Horizontal Deflection w/Internal Damper Diode

    Features: High Breakdown Voltage: VCES= 1500V

    BuiltIn Damper Diode

    Isolated TO3PFM Type Package

    Applications: TV/Character Display Horizontal Deflection Output

    Absolute Maximum Ratings: (TA= +25C unless otherwise specified)CollectorEmitter Voltage, VCES 1500V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

    EmitterBase Voltage, VEBO 6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

    Collector Current, IC 8A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Collector Peak Current, IC(peak) 9A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

    Collector Surge Current, IC(surge) 18A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

    CollectorEmitter Diode Forward Current, ID 8A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

    Collector Power Dissipation (TC= +25C), PC 50W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

    Operating Junction Temperature, TJ +150C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

    Storage Temperature Range, Tstg 55to +150C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

    Electrical Characteristics: (TA= +25C unless otherwise specified)

    Parameter Symbol Test Conditions Min Typ Max Unit

    EmitterBase Breakdown Voltage V(BR)EBO IE= 500mA, IC= 0 6 V

    Collector Cutoff Current ICES VCE= 1500V, RBE= 0 500 A

    DC Current Transfer Ratio hFE VCE= 5V, IC= 1A 25

    CollectorEmitter Saturation Voltage VCE(sat) IC= 6A, IB= 1.2A 5 V

    BaseEmitter Saturation Voltage VBE(sat) IC= 6A, IB= 1.2A 1.5 V

    CollectorEmitter Diode Forward Voltage VECF IF= 8A 2.0 V

    Fall Time tf ICP= 6A, IB1= 1.2A, IB22.4A,f H= 31.5kHz

    0.5 s

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    .615 (15.62).217 (5.5)

    .215 (5.47)

    B C E

    .197(5.0)

    .197(5.0)

    .827(21.0)

    .783

    (19.9)

    .126 (3.2)

    .126

    (3.22)Dia

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