NSVF4017SG4 - RF Transistor for Low Noise Amplifier
Transcript of NSVF4017SG4 - RF Transistor for Low Noise Amplifier
© Semiconductor Components Industries, LLC, 2017
March, 2018 − Rev. 01 Publication Order Number:
NSFV4017SG4/D
NSVF4017SG4
RF Transistor for Low NoiseAmplifier
12 V, 100 mA, fT = 10 GHz typ.This RF transistor is designed for low noise amplifier applications.
MCPH package is suitable for use under high temperatureenvironment because it has superior heat radiation characteristics.This RF transistor is AEC−Q101 qualified and PPAP capable forautomotive applications.
Features• Low−noise Use: NF = 1.2 dB typ. (f = 1 GHz)
• High Cut−off Frequency: fT = 10 GHz typ. (VCE = 5 V)
• High Gain: |S21e|2 = 17 dB typ. (f = 1 GHz)
• MCPH4 Package is Pin−compatible with SC−82FL
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHSCompliant
Typical Applications• Low Noise Amplifier for Digital Radio
• Low Noise Amplifier for TV
• Low Noise Amplifier for FM Radio
• RF Amplifier for UHF Application
MAXIMUM RATINGS at TA = 25°C
Rating Symbol Value Unit
Collector to Base Voltage VCBO 20 V
Collector to Emitter Voltage VCEO 12 V
Emitter to Base Voltage VEBO 2 V
Collector Current IC 100 mA
Collector Dissipation PC 450 mW
Operating Junction and Storage Temper-ature
TJ, Tstg −55 to+150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage thedevice. If any of these limits are exceeded, device functionality should not beassumed, damage may occur and reliability may be affected.
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SC−82FLMCPH4
CASE 419AR
MARKING DIAGRAM
GQ = Specific Device CodeXX = Lot Number
Device Package Shipping†
ORDERING INFORMATION
NSVF4015SG4T1G SC−82FL(Pb−Free)
3000 / Tape &Reel
†For information on tape and reel specifications,including part orientation and tape sizes, pleaserefer to our Tape and Reel Packaging SpecificationBrochure, BRD8011/D.
1
ELECTRICAL CONNECTIONNPN
4
1, 3
2
1: Emitter2: Collector3: Emitter4: Base
GQ
LOT
No.
LOT
No.
NSVF4017SG4
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Table 1. ELECTRICAL CHARACTERISTICS at TA = 25°C (Note 1)
Parameter Symbol Conditions
Value
UnitMin Typ Max
Collector Cutoff Current ICBO VCB = 5 V, IE = 0 A 1.0 �A
Emitter Cutoff Current IEBO VEB = 1 V, IC = 0 A 1.0 �A
DC Current Gain hFE VCE = 5 V, IC = 50 mA 60 150
Gain−Bandwidth Product fT VCE = 5 V, IC = 30 mA 8 10 GHz
Forward Transfer Gain | S21e |2 VCE = 5 V, IC = 30 mA, f = 1 GHz 14 17 dB
Noise Figure NF VCE = 5 V, IC = 10 mA, f = 1 GHz 1.2 1.8 dB
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Productperformance may not be indicated by the Electrical Characteristics if operated under different conditions.1. Pay attention to handling since it is liable to be affected by static electricity due to the high−frequency process adopted.
NSVF4017SG4
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TYPICAL CHARACTERISTICS
Collector−to−Base Voltage, VCB − V
Out
put C
apac
itanc
e, C
ob −
pF
Collector Current, IC − mA
DC
Cur
rent
Gai
n, h
FE
Collector−to−Emitter Voltage, VCE − V
Col
lect
or C
urre
nt, I
C −
mA
Base−to−Emitter Voltage, VBE − V
Col
lect
or C
urre
nt, I
C −
mA
Collector Current, IC − mA
Gai
n−B
andw
idth
Pro
duct
, fT
−−
GH
z
Collector−to−Base Voltage, VCB − V
Rev
erse
Tra
nsfe
r C
apac
itanc
e, C
re −
pF
0 0.2 0.4 0.6 0.8 1.00 121084 620
10
30
50
100
70
20
40
60
80
90
0
20
10
30
40
60
90
80
70
50
100
IB =0 A
100 A
2
3
5
7
2
3
5
7
100
10
1000
32 5 71.0 10 32 5 7 100
VCE=5V
VCE=5V
7
2
5
3
7
2
5
3
1.0
0.1
10
32 5 1000.1 7 32 5 71.0 32 5 7 10
f=1MHz
7
2
3
5
7
2
3
5
100
10
1.01.0 2 3 5 7 10 2 3 5 7 100
VCE=5Vf=1GHz
5
7
2
3
1.0
0.132 5 1000.1 7 32 5 71032 5 71.0
f=1MHz
200 A
300 A
400 A
500 A
600 A
700 A800 A
900 A1000 A
Figure 1. IC vs. VCE Figure 2. IC vs. VBE
Figure 3. hFE vs. IC Figure 4. Cob vs. VCB
Figure 5. Cre vs. VCB Figure 6. fT vs. IC
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NSVF4017SG4
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TYPICAL CHARACTERISTICS
Figure 7. �S21e�2 vs. IC Figure 8. NF vs. IC
Figure 9. PC vs. TA
Collector Current, IC − mA
Noi
se F
igur
e, N
F−
dB
Ambient Temperature, Ta − �C
Col
lect
or D
issi
patio
n, P
C −
mW
Collector Current, IC − mA
Forw
ard
Tra
nsfe
r G
ain,
�S21
e�2 −
dB
00
20 40 60 80 100 120 140 160
450
400
500
350
250
300
150
50
200
100
25
20
15
10
5
01032 5 7 10032 5 71.0 1.0 102 73 5 2 73 5 100
0
3
1
2
6
8
4
5
7
9
10
Zs=50
VCE=5Vf=1GHz
VCE=5Vf=1GHz
Zs=Zsopt
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SC−82FL / MCPH4CASE 419AR
ISSUE ODATE 30 DEC 2011
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
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