Novel EUV resist materials and EUV resist defectsEUV Workshop June 26, 2014 3 When will EUV come in...

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1 Novel EUV resist materials and EUV resist defects Yoshi Hishiro JSR Micro Inc.

Transcript of Novel EUV resist materials and EUV resist defectsEUV Workshop June 26, 2014 3 When will EUV come in...

Page 1: Novel EUV resist materials and EUV resist defectsEUV Workshop June 26, 2014 3 When will EUV come in Industry? " EUV is delayed, likely adopted sub 14 nm node. " The higher resolution

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Novel EUV resist materials and EUV resist defects

Yoshi Hishiro JSR Micro Inc.

Page 2: Novel EUV resist materials and EUV resist defectsEUV Workshop June 26, 2014 3 When will EUV come in Industry? " EUV is delayed, likely adopted sub 14 nm node. " The higher resolution

EUV Workshop June 26, 2014 2 2

Contents

ü Challenge of EUV Resist for 16nmHP ü Key factor of EUV Resist Improvement

ü Defect Improvement

ü Achievement of EUV Resist

ü Summary

Page 3: Novel EUV resist materials and EUV resist defectsEUV Workshop June 26, 2014 3 When will EUV come in Industry? " EUV is delayed, likely adopted sub 14 nm node. " The higher resolution

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When will EUV come in Industry?

Ø  EUV is delayed, likely adopted sub 14 nm node. Ø  The higher resolution will be required for EUV resist.

ITRS2012 Lithography TWG DRAM and MPU Potential Solutions

14nm HP

CAR resist on NXE3300 SPIE2013 ASML

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EUV Workshop June 26, 2014 4 4

Resolution

LWR

Sensitivity

EUV Resist Requirement & Challenges

ü  Low Outgassing ü  Suppression of

OOB influence ü Defectivity etc…

Ø  Simultaneous improvement in Resolution, LWR and Sensitivity (RLS) is required.

Ø  Good defectivity is required for HVM.

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EUV Workshop June 26, 2014 5 5

Key Factors of EUV Resist Improvement

Diffusion Control of PAG Acid

Good Developer/Rinse Wettability Good Pattern Profile

High Dissolution Contrast

H+ H+

H+

M. Harumoto et. Al. SOKUDO , SPIE 2013, 79692G-1

・Polymer Tg ・New PAG…

・Resin solubility ・Profile controller

・Resist hydrophilicity

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Acid Diffusion Control by Resin

Ø JSR developed new monomers to increase resin glass transition temperature (Tg). Ø Resin with higher Tg was developed to control acid diffusion length.

+13% unit B

unit C unit D

unit A

Resin 1 Resin 2

Resin 3 Resin 4

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22 nm HP 20 nm HP 19 nm HP Resin 1

Resin 2

Resin 3

Resin 4

Relationship between Tg and Resolution

High Tg resin showed better resolution, but saturation was observed. However…

LBNL MET NA0.3 Dipole

+13%

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0

1

2

3

4

5

6

7

Normalized Tg

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Relationship between Tg and LWR, Z-factor

Ø  LWR & Z factor are linearly improved by the increase of resin Tg. Ø  It proved well-suppressed acid diffusion, potentially better resolution.

Resin1 Resin2 Resin3 Resin4

Tg* 100 106 107 113 LWR 5.9 nm 4.9 nm 4.4 nm 3.9 nm Z-factor 2.93E-08 2.17E-08 2.04E-08 1.74E-08 SEM image (22nmHP)

◆ LWR (nm) ■ ZF (*10-8)

Z-factor = (Resolution)3 X (LER)2 X (Sensitivity)

H+ H+

H+

H+ H+

H+ Low Tg High Tg

T. Wallow et. Al. SPIE 2008, 69211F

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Pattern Collapse & Profile Control

HP 20nm 19nm 18nm 17nm 46.5mJ

CD(nm)/LWR(nm)

19.2/4.1 18.9/3.6

Standard resist

Ø  Resolution is limited by pattern collapse. Ø  Pattern collapse mitigation requires profile control.

LBNL MET NA0.3, Pseudo-PSM

resist

Pattern Collapse

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Normal resist CD(nm)/LWR(nm)

HP 20nm 19nm 18nm 17nm 46.5mJ 19.9/3.4 19.0/3.4 17.8/3.7 16.7/3.9

Resist with Profile controller

Effect of Profile Control Agent

LBNL MET NA0.3, Pseudo-PSM

Ø  Profile control agent makes resist surface more soluble. Ø  It improves pattern collapse and therefore resolution limit.

HP 20nm 19nm 18nm 17nm 46.5mJ 19.2/4.1 18.9/3.6

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Normal Resist Hydrophilic Resist Water CA* － 100 － 48

Exposed Area Unexposed Area Exposed Area Unexposed Area Wafer map

Defect 14.0 /cm2 18.2 /cm2 1.8 /cm2 0.4 /cm2

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By reducing resist hydrophobicity, good defectivity could be achieved.

*Normalized value

Exp. Area Unexp. Area Exp. Area Unexp. Area

Resist Defectivity Improvement Exp. Unexp.

●Normal Resist ●Hydrophilic Resist

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EUV Workshop June 26, 2014 12 12

Achievement of our EUV resist

BF +40nm +80nm +120nm -40nm -80nm -120nm 18 nm LS DOF on NXE3100 Dipole 60

Ultimate Resolution on BMET 15nm hp 16nm hp 17nm hp

32 nm LS Defectivity on NXE3100

Defect : 0.17/cm2

Ø Excellent PW for 18 nm LS with NXE3100 Ø Ultimate resolution of 15 nm hp with B-MET Ø Good defect density for 32 nm LS on NXE3100 Ø JSR makes more progress for the future!

Page 13: Novel EUV resist materials and EUV resist defectsEUV Workshop June 26, 2014 3 When will EUV come in Industry? " EUV is delayed, likely adopted sub 14 nm node. " The higher resolution

EUV Workshop June 26, 2014 13 13

Summary ü  EUV Resist Development Strategy

•  High Tg resin improves Resolution and LWR. •  Profile control is important for resolution.

ü  Defectivity Improvement •  By controlling resist hydrophobicity, defectivity gets better.

ü  EUV Resist’s Challenge for HVM •  Excellent PW, defectivity were achieved. We continue to improve

more resolution.

H+ H+

H+

・High Tg resin ・Profile Control

Exp. Area Unexp. Area

・Resist wettability

Page 14: Novel EUV resist materials and EUV resist defectsEUV Workshop June 26, 2014 3 When will EUV come in Industry? " EUV is delayed, likely adopted sub 14 nm node. " The higher resolution

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Acknowledgement §  Kurt Ronse / imec §  Geert Vandenberghe / imec §  Eric Hendrickx / imec §  Jan Hermans / imec §  Mieke Goethals / imec §  Philippe Foubert / imec §  Frieda Van Roey / imec §  Joerg Mallmann / ASML §  Raymond Maas / ASML §  Coen Verspaget / ASML §  Rik Hoefnagels /ASML §  Marieke Meeuwissen / ASML §  Suping Wang / ASML §  Oktay Yildirim / ASML §  Gijsbert Rispens / ASML §  Naoko Tsugama / ASML

§  Kathleen Nafus / TEL §  Hideo Shite / TEL §  Koichi Matsunaga / TEL §  Yuhei Kuwahara / TEL §  John Biafore / KLA §  Alessandro Vaglio Pret / KLA §  Masahiko Harumoto/ SCREEN §  Osamu Tamada /SCREEN §  Harold Stokes / SCREEN §  Yan Thouroude / SCREEN §  Todd R. Younkin §  Erik Verduijn §  Norihiko Sugie / EIDEC

Page 15: Novel EUV resist materials and EUV resist defectsEUV Workshop June 26, 2014 3 When will EUV come in Industry? " EUV is delayed, likely adopted sub 14 nm node. " The higher resolution

EUV Workshop June 26, 2014 15 15

Thank you for your attention !!

2007 40 nm LS, ArFi

2008 26 nm LS, ArFi DP

2010 19 nm LS, EUV

2013 14 nm LS, EUV


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