No Slide Title · 2015. 9. 12. · 400 825 r 20 1256 241 Jiří Jakovenko – Electronics and...
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Electronics and Microelectronics AE4B34EM
9. lecture
• IC processing technology
• Wafer fabrication
• Lithography
Jiří Jakovenko – Electronics and Microelectronics - Department of Microelectronics – CTU
How to get
1 000 000 000
Components to 1 cm2
Jiří Jakovenko – Electronics and Microelectronics - Department of Microelectronics – CTU
It’s very small world…
Human hair on the surface of the chip
From The Oregonian, April 07, 2008
It’s very small world…
Jiří Jakovenko – Electronics and Microelectronics - Department of Microelectronics – CTU
More than 2 000 000 transistors in 45nm technology can be integrated on the surface of full stop.
Jiří Jakovenko – Electronics and Microelectronics - Department of Microelectronics – CTU
Technology process
Jiří Jakovenko – Electronics and Microelectronics - Department of Microelectronics – CTU
Why is the integration so beneficial?
Improve functionality of the system
Higher speed an performance
Increase whole system reliability
Lower power consumption
Billions of identical electronic components are assembled on one single chip with 100% functionality
Lower Price
Jiří Jakovenko – Electronics and Microelectronics - Department of Microelectronics – CTU
Basic steps of IC processing
Preparation of single crystal Si wafer
Lithography
Etching
Thermal oxidation or deposition of silicon dioxide
Diffusion
Ion Implantation
Physical, chemical deposition
Epitaxial growth
Packaging and Encapsulating
Testing
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Jiří Jakovenko – Electronics and Microelectronics - Department of Microelectronics – CTU
Clean rooms
In the normal living environment is about 10 million particles in cubic meter. In such an environment would be impossible to manufacture semiconductor devices Fresh air Exhausted
air
Selling filters
Leakage
1 – 100 particles
Overpressure 10-15 Pa
Air velocity 0,5 m/s
Adjustment Temperature
and humidity
Perforated floor
Jiří Jakovenko – Electronics and Microelectronics - Department of Microelectronics – CTU
Some pictures from IC process
Special clothing, boots, gloves, masks
Jiří Jakovenko – Electronics and Microelectronics - Department of Microelectronics – CTU
IC Technology Fab
Jiří Jakovenko – Electronics and Microelectronics - Department of Microelectronics – CTU
Jiří Jakovenko – Electronics and Microelectronics - Department of Microelectronics – CTU Jiří Jakovenko – Electronics and Microelectronics - Department of Microelectronics – CTU
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IC processing technology - video
Jiří Jakovenko – Electronics and Microelectronics - Department of Microelectronics – CTU
http://www.youtube.com/watch?v=aWVywhzuHnQ&feature=PlayList&p=
23BCE720D421E520&playnext=1&playnext_from=PL&index=30
Jiří Jakovenko – Electronics and Microelectronics - Department of Microelectronics – CTU
Preparation of single crystal Si wafers
Single chip
Wafer
Today, we use wafers up to 15" (45 cm) diameter
Jiří Jakovenko – Electronics and Microelectronics - Department of Microelectronics – CTU
Wafer evolution
Year of invention
1970 1975 1980 1985 1990 1995 2000
75
(44,2) (78,5)
125
150
(176,7)
2005
50
(Surface in cm²) 300
(706,8)
450
(6358)
200
(314,1)
100
(122,5)
5-6
150 mm 4
200 mm 3-4 roky
300 mm
(19,6)
2009: 450 mm
Diameter in mm
Intel Samsung TSMC
Jiří Jakovenko – Electronics and Microelectronics - Department of Microelectronics – CTU
Wafer fabrication technology
Monocrystal growth
Monocrystal milling
Cutting of the ends
Veneers cut
Wafer cutting
Edge grinding
Grinding and polishing
Etching
Polishing
Testing
Slurry
Polishing table
Polishing head
Jiří Jakovenko – Electronics and Microelectronics - Department of Microelectronics – CTU
Wafer fabrication technology
Jiří Jakovenko – Electronics and Microelectronics - Department of Microelectronics – CTU
Wafer fabrication technology
Monocrystal nucleus
Melted Si
Heating
Insulating cap
Monocrystal
Melting pot
Heating
Monocrystal holder and a
rotary mechanism
Czochralsky method – monocrystal growth
Silicon melts at 1415 ° C compared to iron at 1535 ° C, aluminum at 660 º C.
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Jiří Jakovenko – Electronics and Microelectronics - Department of Microelectronics – CTU
Wafer fabrication technology
Jiří Jakovenko – Electronics and Microelectronics - Department of Microelectronics – CTU
Single crystal Growth unit
Jiří Jakovenko – Electronics and Microelectronics - Department of Microelectronics – CTU
Single crystal processing
Veneer cutter
Diameter adjustment
Contaminated ends are cut off
Wafer Cutter
Type conductivity (P or N) and crystallographic orientation of silicon are encoded in the relative position of the main
and auxiliary veneers
Jiří Jakovenko – Electronics and Microelectronics - Department of Microelectronics – CTU
Wafer Polishing
The upper polishing plate
The lower polishing plate
Wafer
Abrasive
material
The surface of the wafer must be perfectly smoothed without any scratches and bumps. Accuracy is at the nanoscale.
Jiří Jakovenko – Electronics and Microelectronics - Department of Microelectronics – CTU
Wafer polishing unit Wafer processing technology - video
Jiří Jakovenko – Electronics and Microelectronics - Department of Microelectronics – CTU
http://www.youtube.com/watch?v=LWfCqpJzJYM&feature=P
layList&p=E513A3C80416FA47&index=0&playnext=1
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Jiří Jakovenko – Electronics and Microelectronics - Department of Microelectronics – CTU
Measurement of wafers characteristics
Black points
Half mirror
Light source
Lens
Imaging Optics
Imaging Optics
White points
Lens
The light reflected by the surface heterogeneity
Jiří Jakovenko – Electronics and Microelectronics - Department of Microelectronics – CTU
The size and properties of wafers
Diameter (mm)
Thickness
(m)
Surface (cm2)
Weight (grams)
150 675 20 176 28
200 725 20 314 53
300 775 20 706 127
400 825 20 1256 241
Jiří Jakovenko – Electronics and Microelectronics - Department of Microelectronics – CTU
Why we want bigger diameter?
88 chips 200-mm wafer
232 chips 300-mm wafer
We expect the size of microprocessors 1,5 x 1,5 cm
Jiří Jakovenko – Electronics and Microelectronics - Department of Microelectronics – CTU
Defects in the IC process
• The yield (number of good wafers) corresponds chip size • Chip Price depends on Yield
25% 80%
Jiří Jakovenko – Electronics and Microelectronics - Department of Microelectronics – CTU
The yield
_ _ _ _ _.100%
_ _ _ _ _
Number of good chips on waferY
Number of all chips on wafer
__
_ _ _
Wafer priceChip price
Number of good chips Y
Jiří Jakovenko – Electronics and Microelectronics - Department of Microelectronics – CTU
Úlomek křemíku
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Lithography process
Jiří Jakovenko – Electronics and Microelectronics - Department of Microelectronics – CTU
PolySi layer after etching and removal of photoresist.
Photoresist after processing (picture shows a PolySi layer grown on top of SiO2)
How to get the layer topology on the silicon chip…
Lithography is a technique in which selected portions of given layer can be masked out
Jiří Jakovenko – Electronics and Microelectronics - Department of Microelectronics – CTU
Types of lithography
Types of lithography:
Photolithography
Electron lithography
X-ray lithography
It is one of the factors that affect the density of integration
Photolithography
Electron lithography with direct exposure
X-ray photolithography
| 0,1
| 0,2
| 1,0
| 0,5
| 0,2
| 0,01
| 0,05
| 5
m
DUV
Jiří Jakovenko – Electronics and Microelectronics - Department of Microelectronics – CTU
Radiation sources in ultraviolet region
l (nm)
700 4 550 600 650 500 450 400 350 300 250 200 150 100 50
Ultra violet region Visible region
Mercury lamp laser
g h i
365 405 248 193 13 436 157 126
Ultraviolet Red Blue Green Yellow Orange Mid-UV EUV DUV VUV
Jiří Jakovenko – Electronics and Microelectronics - Department of Microelectronics – CTU
Oxidation
Optical mask
Next technology step
Photoresist coating
Washing, drying Etching
Photoresist processing
Exposition
Typical operation steps in one photolithographic cycle
Photolithography
photoresist removal