NJU7028V datasheet

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NJU7028

Ver.2011-11-28

13µA/ch, Rail-to-Rail OutputQuad CMOS Operational Amplifier

GENERAL DESCRIPTION

PACKAGE OUTLINE

The NJU7028 is a low power, quad CMOS operational

amplifier. It is tolerant to RF noise. The NJU7028 can

operate from a single-supply voltage of +1.8V to +5.5V.

In addition, this amplifier features Rail-to-Rail output and low

input bias current (1pA). Because of these features, the

NJU7028 is ideal for low-side current sense amplifier.

The very low supply current of the NJU7028 (13µA/ch)

makes it suitable for battery-operated application.

FEATURES

Low Supply Current IDD=13µA/ch typ.

Low Operating Voltage Vopr= 1.8V to 5.5V

Rail-to-Rail Output VOH=4.9V min./ VOL=0.1V max. (at VDD= 5V, RL=100kΩ)

VOH=4.8V min./ VOL=0.2V max. (at VDD= 5V, IO=1mA)

Enhanced RF Noise Immunity

CMOS Process

Package SSOP14

APPLICATIONBattery-operated applicationBattery monitorCurrent sensorPhotodiode amplification

PIN CONFIGURATION

NJU7028V(SSOP14)

1

2

3

4

14

13

12

11

5

6

7

10

9

8

1

2 3

4 Pin Function1. OUTPUT 1 8. OUTPUT 32. -INPUT 1 9. -INPUT 33. +INPUT 1 10. +INPUT 34. VDD 11. VSS 5. +INPUT 2 12. +INPUT 46. -INPUT 2 13. -INPUT 47. OUTPUT 2 14. OUTPUT 4

Top View



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ABSOLUTE MAXIMUM RATINGS (Ta=25˚C, unless otherwise noted.)

(Note1) For supply voltage less than +7V, the absolute maximum rating is equal to the supply voltage.(Note2) EIA/JEDEC STANDARD Test board (114.3 x 76.2 x 1.6mm, 2layers, FR-4) mounting.(Note3) Do not exceed “Power dissipation: PD” in which power dissipation in IC is shown by the absolute maximum rating.

See Figure “Power Dissipation Curve” when ambient temperature is over 25˚C.

RECOMMENDED OPERATING CONDITION (Ta=25˚C)

PARAMETER SYMBOL RATING UNIT

Supply Voltage VDD 1.8 to 5.5 V

PARAMETER SYMBOL RATINGS UNIT

Supply Voltage VDD +7 V

Input Common Mode Voltage VICM V SS -0.3 to VDD+0.3 V

Differential Input Voltage VID ±7 (Note1) V

Power Dissipation PD 400 (Note2) mWOperating Temperature Range Top r -40 to +85 ˚C

Storage Temperature Range Tst g -55 to +125 ˚C

Power Dissipation Derating Curve

0

100

200

300

400

500

600

5 25 45 65 85 105 125

Ambient Temperature Ta (°C)

P o w e r D i s s i p a t i o n P d ( m W )

(a) ∆

Pd=-4mW/°C(Note2)

Figure 1



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ELECTRICAL CHARACTERISTICS DC CHARACTERISTICS (VDD=5V, VSS=0V, Ta=25˚C, unless otherwise noted.)

PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT

Supply Current IDD No Signal - 48 72 µ A

Input Offset Voltage VIO V IC=0V, RS=50Ω - 0.9 4 mV

Input Offset Voltage drift ∆VIO/ ∆T - 1.5 - µV/ºCInput Bias Current IB - 1 - pA

Input Offset Current IIO - 1 - pA

Open loop gain AV V O=0.5V to 4.5V, RL=100kΩ to 2.5V 70 90 - dB

Common Mode Rejection Ratio CMR VICM=0V to 4.1V 65 80 - dB

Supply Voltage Rejection Ratio SVR VDD=1.8V to 5.5V 70 90 - dB

VOH1 RL=100kΩ to 2.5V 4.9 4.95 - VMaximum Output Voltage 1

VOL1 RL=100kΩ to 2.5V - 0.05 0.1 V

VOH2 RL=100kΩ to 0V 4.9 4.95 - VMaximum Output Voltage 2

VOL2 RL=100kΩ to 0V - 0.02 0.05 V

VOH3 Isource=1mA 4.8 4.85 - V

Maximum Output Voltage 3 VOL3 Isink=1mA - 0.15 0.2 V

Common Mode Input Voltage Range VICM CMR ≥65dB 0 - 4.1 V

AC CHARACTERISTICS (VDD=5V, VSS=0V, Ta=25˚C, unless otherwise noted.)


Gain Bandwidth Product GBW RL=100kΩ to 2.5V, C L=20pF, f=10kHz - 160 - kHz

Phase Margin M R L=100kΩ to 2.5V, C L=20pF - 80 - deg

Gain Margin GM R L=100kΩ to 2.5V, C L=20pF - 15 - dB

Equivalent Input Noise Voltage en f=1kHz - 50 - nV/√Hz

Slew Rate SRGV=0dB, RL=100kΩ to 2.5V, C L=20pF,

Vin=3Vpp (1V to 4V)(Note4) (Note5)

- 0.05 - V/us

Power Bandwidth PBWGV=6dB, RF=50kΩ, RG=50kΩ, CL=20pF,Vin=2.5Vpp (1.25V to 3.75V), Vo≥4.8Vpp

(Note6)- 5 - kHz

Total Harmonic Distortion THDGV=6dB, RF=50kΩ, RG=50kΩ, CL=20pF,

Vo=4Vpp, f=100Hz(Note6)

- 0.01 - %

(Note4) Slew rate is defined by the lower value of the rise or fall.

(Note5) See figure2-1 for test circuit.




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ELECTRICAL CHARACTERISTICS DC CHARACTERISTICS (VDD=3V, VSS=0V, Ta=25˚C, unless otherwise noted.)



Input Offset Voltage VIO Vic=0V, R S=50Ω - 0.9 4 mV



Open loop gain AV Vo=0.5V to 2.5V, R L=100kΩ to 1.5V 70 90 - dB




VOL1 RL=100kΩ to 1.5V - 0.05 0.1 V


VOL2 RL=100kΩ to 0V - 0.02 0.05 V

VOH3 Isource=1mA 2.8 2.85 - V

Maximum Output Voltage 3 VOL3 Isink=1mA - 0.15 0.2 V


AC CHARACTERISTICS (VDD=3V, VSS=0V, Ta=25˚C, unless otherwise noted.)






Slew Rate SRGV=0dB, RL=100kΩ to 1.5V, C L=20pF,

Vin=1Vpp (1V to 2V)(Note4) (Note5)

- 0.05 - V/us

Power Bandwidth PBWGV=6dB, RF=50kΩ, RG=50kΩ, CL=20pF,Vin=1.5Vpp (0.75V to 2.25V), Vo≥2.8Vpp

(Note6)- 8 - kHz



- 0.01 - %






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ELECTRICAL CHARACTERISTICS

DC CHARACTERISTICS (VDD=1.8V, VSS=0V, Ta=25˚C, unless otherwise noted.)



Input Offset Voltage VIO Vic=0V, R S=50Ω - 0.9 4 mV



Open loop gain AV Vo=0.5V to 2.5V, R L=100kΩ to 0.9V 70 90 - dB




VOL1 RL=100kΩ to 0.9V - 0.05 0.1 V


VOL2 RL=100kΩ to 0V - 0.02 0.05 V

VOH3 Isource=0.5mA 1.5 1.55 - V

Maximum Output Voltage 3 VOL3 Isink=0.5mA - 0.25 0.3 V


AC CHARACTERISTICS (VDD=1.8V, VSS=0V, Ta=25˚C, unless otherwise noted.)






Slew Rate SR

GV=0dB, RL=100kΩ to 1.5V, C L=20pF,

Vin=0.5Vpp (0.3V to 0.8V)(Note4) (Note7)

- 0.05 - V/us

Power Bandwidth PBWGV=6dB, RF=50kΩ, RG=50kΩ, CL=20pF,

Vin=0.9Vpp (0V to 0.9V), Vo≥1.6Vpp(Note8)

- 14 - kHz



- 0.01 - %



(Note8) See figure2-4 for test circuit..



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MEASUREMENT CIRCUITS

VDD

RF

RG

Vout

Vin

CL

VDD

2

VDD

RF

RG

Vout

Vin

CL

VDD

Vout

Vin

CLRL

VDD

Vout

Vin

CL

VDD

2

RL

Figure 2-1:Measurement circuit 1 Figure 2-2:Measurement circuit 2

Figure 2-3:Measurement circuit 3 Figure 2-4:Measurement circuit 4



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TYPICAL CHARACTERISTICS

Supply Current vs. Supply Voltage (Temperature)

GV=0dB

0

10

20

30

40

50

60

0 1 2 3 4 5 6 7

Supply Voltage [V]

S u p p l y C u r r e n t [ µ A ]

Ta=-40ºC Ta=-50ºC

Ta=125ºCTa=85ºCTa=25ºC

Supply Current vs. Temperature (Supply Voltage)

GV=0dB

0

10

20

30

40

50

60

-50 -25 0 25 50 75 100 125

Ambient Temperature [ºC]

S u p p l y C u r r e n t [ µ A ]

VDD=3.0V

VDD=5.5V VDD=5.0V

VDD=1.8V

Input Offset Voltage vs. Temperature (Supply Voltage)

VICM=VDD /2

-4.0

-3.0

-2.0

-1.0

0.0

1.0

2.0

3.0

4.0

-50 -25 0 25 50 75 100 125


I n p u t O f f s e t V o l t a g e [ m V ]

VDD=3V

VDD=5V

VDD=1.8V

Input Offset Voltage vs.

Common Mode Input Voltage(Temperature)

VDD=3V

-4.0

-3.0

-2.0

-1.0

0.0

1.0

2.0

3.0

4.0

-2.0 -1.0 0.0 1.0 2.0 3.0 4.0

Common Mode Input Voltage [V]

I n p u t O f f s e t V o l t a g e [ m V ]

Ta=-40ºCTa=25ºC

Ta=85ºC

Input Offset Voltage DistributionVDD=5V, VICM=0V, Ta=25ºC, n=240

0

10

20

30

40

50

60

70

80

90

100

110120

-4.5 -3.5 -2.5 -1.5 -0.5 0.5 1.5 2.5 3.5 4.5

Input Offset Voltage [mV]

N u m b e r o f A m p l i f i e r

Input Offset Voltage Drift DistributionVDD=5V, VICM=0V, Ta=-40 to 85ºC, n=240

0

10

20

30

40

50

60

70

80

90

100

110120

-9.0 -7.0 -5.0 -3.0 -1.0 1.0 3.0 5.0 7.0 9.0Input Offset Voltage Drift [µV/ºC]

N u m b e r o f A m p l i f i e r



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CMR vs. Temperature (Supply Voltage)

VICM=0V VDD-0.9V

0

20

40

60

80

100

120

140

-50 -25 0 25 50 75 100 125


C o m m o n M o d e R e j e c t i o n R a t i o [ d

B ]

VDD=3V VDD=5V

VDD=1.8V

SVR vs. TemperatureVDD=1.8V 5.5V

0

20

40

60

80

100

120

-50 -25 0 25 50 75 100 125


S u p p l y V o l t a g e R e j e c t i o n R a t i o [ d

B ]

Output Voltage vs. Output Current (Temperature)

VDD=5V, VCM=2.5V

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

0.001 0.01 0.1 1 10 100

Output Current [mA]

O u t p u t

V o l t a g e [ V ]

Ta=85ºC

Ta=-40ºC

Ta=25ºC

Ta=85ºC

Ta=-40ºC

Ta=25ºC

Gain vs. TemperatureVO=0V VDD-0.5V, RL=100kΩ to 0V

0

20

40

60

80

100

120

-50 -25 0 25 50 75 100 125


V o l t a g e G a i n [ d B ]

VDD=5V

VDD=3VVDD=1.8V


VDD=3V, VCM=1.5V

0.0

0.5

1.0

1.5

2.0

2.5

3.0

0.001 0.01 0.1 1 10 100

Output Current [mA]

O u t p u t V o l t a g e [ V ]

Ta=85ºC

Ta=-40ºC

Ta=25ºC

Ta=85ºC

Ta=-40ºC

Ta=25ºC


VDD=1.8V, VCM=0.9V

0.0

0.3

0.6

0.9

1.2

1.5

1.8

0.001 0.01 0.1 1 10 100

Output Current [mA]

O u t p u t V o l t a g e [ V ]

Ta=85ºC

Ta=-40ºC

Ta=25ºC

Ta=85ºC

Ta=-40ºC

Ta=25ºC



NJU7028

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Gain / Phase vs. FrequencyRF=1MΩ, RG=10kΩ, RL=100kΩ, CL=20pF, Ta=25ºC

-60

-40

-20

0

20

40

60

100 1k 10k 100k 1M 10M

Frequency[Hz]


-180

-120

-60

0

60

120

180

P h a s e [ d e g ]

Gain

Phase

VDD=5V

VDD=3V

VDD=1.8V

VDD=5V

VDD=3VVDD=1.8V

Gain / Phase vs. Frequency (Load Capacitance)

VDD=3V, RF=1MΩ, RG=10kΩ, RL=100kΩ, Ta=25ºC

-60

-40

-20

0

20

40

60

100 1k 10k 100k 1M 10M

Frequency [Hz]


-180

-120

-60

0

60

120

180

P h a s e [ d e g ]

Gain

Phase

CL=150pF

CL=100pF

CL=20pF

CL=20pF

CL=100pF

CL=150pF

THD+Noise vs. Output VoltageVDD=3V, Gv=6dB, RF=50kΩ, CL=20pF

BW=10Hz-500kHz, Ta=25ºC

0.001

0.01

0.1

1

10

0.001 0.01 0.1 1 10

Output Voltage [Vrms]

T o t a l H a r m o n i c

D i s t o r t i o n + N o i s e [ % ]

f=100Hz

f=20Hz

Channel Separation vs. FrequencyVDD=3V, GV=40dB, RF=100kΩ, RL=open, VO=0.5Vrms, Ta=25ºC

-150

-140

-130

-120

-110

-100

-90

-80

-70

-60

10 100 1k 10k 100k

Frequency [Hz]

C h a n n e l S e p a r a t i o n [ d B ]

A C

A B

A D

Voltage Noise vs. FrequencyVDD=3V, GV=40dB, RF=100kΩ, RG=1kΩ, Ta=25ºC

0

20

40

60

80

100

120

140

160

180

200

1 10 100 1k 10k

Frequency [Hz]

E q u i v a l e n t I n

p u t N o i s e V o l t a g e

[ n

V / H z ]



NJU7028

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[CAUTION]The specifications on this databook are only

given for information , without any guaranteeas regards either mistakes or omissions. Theapplication circuits in this databook aredescribed only to show representative usagesof the product and not intended for theguarantee or permission of any right includingthe industrial rights.

Pulse Response (Load Capacitance)

VDD=3V, Gv=0dB, RL=100kΩ, Ta=25ºC

-1

-1

0

1

1

2

2

3

0 0 0 0 0 0 0 0 010µs/div.

0 . 5 V / d i v .

-3

-2

-2

-1

-1

0

1

1

INPUT

CL=120pF

CL=100pF

CL=20pF

OUTPUT

Pulse Response (Load Capacitance)

VDD=3V, Gv=0dB, RL=100kΩ, Ta=25ºC

-1

-1

0

1

1

2

2

3

0 0 0 0 0 0 0 0 010µs/div.

0 . 5 V / d i v .

-3

-2

-2

-1

-1

0

1

1

INPUT

CL=120pF

CL=100pF

CL=20pFOUTPUT

NJU7028V datasheet

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