Recent advances in compound semiconductor radiation detectors
Newly Developed Semiconductor Detectors - KEK · 2007-07-27 · Newly Developed Semiconductor...
Transcript of Newly Developed Semiconductor Detectors - KEK · 2007-07-27 · Newly Developed Semiconductor...
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CONFIDENTIAL 1Solid State Div.HAMAMATSU
Photon is our Business
Newly Developed Semiconductor Detectors
・Multi-Pixel Photon Counter (MPPC)
HAMAMATSU PHOTONICS K.K.Koei Yamamoto
PD07 Kobe June 27th 2007
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Solid State Div.HAMAMATSU
Photon is our Business
■ Multi Pixel Photon Counter(MPPC)
The MPPC (Multi-Pixel Photon Counter) is developed by HAMAMATSU PHOTONICS K. K.
and it is one of the products of Si-PM (Silicon Photo multiplier) family which was originally developed in Russia.
HAMAMATSU MPPC is designed as a photon counting device based on structures of a Si APD which was adopted by CERN (CMS).
HAMAMATSU named this product MPPC which is a trademark.
What’s MPPC?Solid state photon counter havingMulti pixelated Geiger-mode APDs with self-quenching resistance
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MRS-APD (Metal Resistive Semiconductor APD)SPM (Silicon Photo Multiplier)MPGM APD (Multi Pixel Geiger-mode APD)AMPD (Avalanche Micro-pixel Photo Diode)SSPM (Solid State Photo Multiplier) GM-APD (Geiger Mode APD)SPAD (Singe Photon Avalanche Diode)
The candidates of name in SiPM faimily
MPPC : Multi Pixel Photon Counter
SiPM (Silicon Photo Multiplier)SiPMT (Silicon Photo Multiplier Tube)
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Solid State Div.HAMAMATSU
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What is the structure of MPPC to improve the performances
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Photo Absorption coefficient of Silicon
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Solid State Div.HAMAMATSU
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holes holes
electron electron
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Solid State Div.HAMAMATSU
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CMS(CERN) APD
0.0
0
0.7
5
1.5
0
2.2
5
3.0
0
3.7
5
4.5
0
5.2
5
6.0
0
0 %1 0 %2 0 %
3 0 %
4 0 %
5 0 %
6 0 %
7 0 %
8 0 %
9 0 %
1 0 0 %
p o s i t io n ( m m )
S 8 6 6 4 - 5 5 G a in U n i f o rm i t y( T y p . M = 5 0 )
S 8 6 6 4 - 5 5 S p e c t r a l r e s p o n s e c u r v e
0
1 0 0
2 0 0
3 0 0
4 0 0
5 0 0
6 0 0
2 0 0 4 0 0 6 0 0 8 0 0 1 0 0 0 1 2 0 0
W a v e l e n g t h ( n m )
Photo
sensit
ivit
y(m
A/W
)
0 %
2 0 %
4 0 %
6 0 %
8 0 %
1 0 0 %
1 2 0 %
QE
(%)
P h o t o s e n s i t i v i t y
Q E
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・ APD structure used in the electromagnetic Calorimeter of CMS.
・ The p/n junction is formed in an epitaxial layer with 50μm thickness.
・ Bias 350 to 400V to get gain 50
E field strengthP+
P
N
N-
N+
Hamamatsu Reverse Structure APD for CMS
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p+
nn--epi
n++-subst.
n+
pp--epi
p++-subst.
p+
p--epi
n++-subst.
n+pp-p+
N/P-Reach through
P/N-Reach through N/P-Reach throughBack illumination type
HPK Reverse structure
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Solid State Div.HAMAMATSU
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What are the characteristics of MPPC
MPPC signal (ADC counts)100 200 300 400 500 600
Entri
es
0
0.2
0.4
0.6
0.8
1 1600 pixel
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■ Specification of 1mm□, MPPC
1600 400 100
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■ Bias vs. Gain
S10362-11-025U/C S10362-11-050U/C, -100U/C
25μm 1600pixels
50μm 400pixels
100μm 100pixels
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■ Bias vs. Dark count
S10362-11-025U/C S10362-11-050U/C, -100U/C
25μm 1600pixels
50μm 400pixels
100μm 100pixels
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Photon Detection Efficiency (PDE)
100μm Pixel(100 pixel type)
50μm Pixel(400 pixel type)
25μm Pixel(1600 pixel type)
※including the cross-talk and after pulse
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■ Output signal of MPPC
Photon counting by pulse height(liner Amp.)
Photon counting by output charge(charge Amp.)
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Energy Resolution
0
500
1000
1500
0 500 1000 1500 2000 2500 3000
Channel Number
Count pe
r Chan
nel
511keV
1275keV
170keV
MPPC: 50mm pitch, 3mm squareLSO: 3mm x 3mm x 20mmFWHM @511keV: 13%
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Gain uniformity(400 pixel, 100 samples)
Delta V [V]0.5 1 1.5 2 2.5200
400
600
800
1000
1200
1400
310× Gain Delta V : 400pixel 100samples
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Solid State Div.HAMAMATSU
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PDE uniformity(400 pixel, 100samples)
Delta V [V]0.5 1 1.5 2 2.50
0.5
1
1.5
2
2.5
PDE Delta V : 400pixel 100samples
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S10362-11-025U ( 2006.12 )
1600 pixel Microscopic view
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Solid State Div.HAMAMATSU
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One pixel
y-po
int (
2µm
pitc
h)
x-point (2µm pitch) x-point (1µm pitch)
y-po
int (
1µm
pitc
h)
Gai
n (x
105
)
Sens
itivi
ty (a
rbitr
ary)
Laser Scan in One Pixel
1600 pixel Sensitivity 1600 pixel Gain
• Pin-point scan :YAG laser (λ = 532 nm) with spot size ~ 1 µm.• Variation of photon sensitivity and gain in one pixel are evaluated.• Observed variation is 2 ~ 5 % in a sensitive areafor the 100 / 400 / 1600 pixel MPPCs.
Variation ~ 3 %
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Time resolution at center in different pixelMPPC: MPPC:1mm2 50μm pitch
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23Solid State Div.HAMAMATSU
Photon is our Business
Time resolution in one pixelMPPC:1mm2 50μm pitch
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Package Developments
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Plastic PKG(1mm□ × 1ch.)
4.23.2
1.3
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1.92.4
1.0
[mm]
SMD PKG(1mm□ × 1ch.)
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3.94.4
1.0
[mm]
SMD PKG(3mm□ × 1ch.)
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CERAMIC PKG(3mm□ × 1ch.)
5.97.2
2.0
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CERAMIC PKG(3mm□ × 4ch.)
8.1
8.95
2.0
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■ MPPC’s future plan
・Increase reproducibility and uniformity・ Large sensitive area , Array and Matrix・Enhance PDE・Suppress after pulse and cross talk・Quenching resistance optimization・Package development (small, cheap, rugged) ・Custom design ( pitch, package, array)
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Al optical separation and Trench etching
Al optical separation
Trench etching
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MPPC Module
Features-Employs a Geiger-mode multi-pixel APD(MPPC)-Integrates a signal readout circuit ideal for MPPC-Built-in high-voltage circuit and temperature-compensated
circuit-Three types of output:
analog, comparator, pulse calculation value-USB interface for easy handling: driven by USB bus power-Compact and light weight
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MPPC Module block diagram
BUS line
Output-1 ( analog out )
Power ( Use USB bus power )Output-3 ( pulse calculation value)
Output-2 ( comparator out )
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Characteristics(analog output)
Measurement
PC
USB
C10507-11-025U C10507-11-050U
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Characteristics(temperature stability of Gain)
G a in tem peratu re charac te ris tics
-10
-8
-6
-4
-2
0
2
4
6
8
10
-30deg -20deg -10deg 0deg 10deg 20deg 30deg 40deg 50deg 60deg
Tem pera tu re(℃ )
Tem
pera
ture
sta
bilit
y of
gain
(%
)
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www.hamamatsu.com