New Gallium Oxide Nanostructures for High Temperature Sensors · 2015. 4. 30. · Gallium Oxide...
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Gallium Oxide Nanostructures for High Temperature Sensors
Ramana Chintalapalle (PI)Mechanical Engineering, University of Texas at El Paso
Students: Ernesto Rubio (PhD); S.K. Samala (MS)
Program Manager:Richard Dunst, NETL, DOE
Project: DE-FE0007225Project Period: 10/01/2011 to 12/31/2014
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IntroductionResearch ObjectivesExperimentsResults Intrinsic Ga2O3
Tungsten (W)‐doped Ga2O3
Summary & Outlook
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Power Systems
High Temperatures
Highly Corrosive Environm
entsHighly
Oxidizing Environm
entsHigh
Pressures
Challenging Environment in Power Systems
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Structure(micro/nano)
Structure(micro/nano)
Choice of MaterialsChoice of Materials
SensitivitySensitivity
PoisoningPoisoning StabilityStability
ContaminationContamination
LifeLife SelectivitySelectivity
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Cost & Manuf.Cost & Manuf.
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Savings; $$$ M/year
Eliminate Pollutants
Efficiency Enhancement
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Fundamental Science – Phases (,,γ, and δ)
Novel Properties –Metal Doping
Surface Chemical Reactions
Chemical Sensors
Ease of Thin Film Formation
Integration into Nano‐electronics
Ga2O3
Wide band gap (>5 eV) semiconductor High thermal and chemical stability (Tm: 1725 oC) One of the most suitable materials for high temperature gas sensing
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Tk
EpOB
A
iexp2
Activation energy
Oxygen partial pressure Boltzmann
constantTemperature
Electrical conductivity
At T≥700 oC, defects equilibrium with surrounding atmosphere n type conductivity depends on oxygen partial pressure
At T< 700 oC, Ga-oxide exhibits sensitivity to reducing gases (CO, H2)
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Objective 1: To fabricate high‐quality pure and dopedGa2O3‐based materials and optimize conditions to produceunique architectures and morphology at the nano scaleObjective 2: Derive the structure‐property relationships atthe nanoscale dimensions and demonstrate high‐temperature oxygen sensing (faster response) and stabilityObjective 3: To promote research and education in thearea of sensors and controls
Goal: Design the high temperature oxygen sensors(employing Ga2O3‐based nanostructures)
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Project Work Plan
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Materials Fabrication(Pure Ga‐Oxide) Materials
Character.& W‐Doping
Testing and Performance Evaluation
Y-1
Y-2
Y-3
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Target (for Deposition)Ga2O3 & W
Substrate(s): Si(100) Alumina
MaterialsGa-oxide
Cu-backing plate
2 inch.
1/8 inch.
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2 inch
W
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RF magnetron sputtering Deposition Conditions
Fixed:- Base pressure ~10-6 Torr- Powers: Ga2O3100 W- Target-Substrate distance: 7 cm- Sputtering gas: Argon + O2
Variables: Sample set 1 (Intrinsic): Substrate Temperature: RT-500 ˚CSample set 2 (W-Doped): Tungsten Target Power (50 to 100W)Substrate Temperature = 500 ˚C
Fabrication – Thin Films
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Sample set 3 (W-Doped): Target Powers = const.; Substrate temperature varied from 500 to 800˚C
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Sensors and Sample Matrix
• ~200 nm thick Ga-oxide
• 200 nm thick Pt interdigitedelectrodes
• Spacing: 100 µm
• Extremely thin (~50 nm) samples
• Two silver electrodes attached on the surface
• Bulk (ceramic pellets)
• Electrical Impedance
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Sensor Performance ‐ Electrical
Constant current
• Oxygen introduced and partial pressures of oxygen were varied
• Evaluation at temperatures ≥ 700 °C
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10 20 30 40 50 60 70 80 90
Si (2
00)
Si (2
00)
800C
(020
)(
221)
(020
)(
221)
500C
400C
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Crystal Structure
300 400 500 600 70010
15
20
25
30
35 Exponential Fit
Gra
in S
ize
(nm
)
Temperature (C)
L = Lo exp (-∆E/kBT)L: Average size L0: Pre-exp. factor (film, substrate materials) ∆E: Activation energy, kB: Boltzmann constant and T: Absolute temperature.
500 °C is favorable/critical to provide sufficient energy for Ga2O3 film crystallization (β-phase)
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Morphology & Composition
0 100 200 300 400 500 600 700 800 900
1.2
1.5
1.8
O/G
a
Temperature (C)
O/Ga
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Microstructure & Electronic Properties
100 200 300 400 500 600 700 800
Slightly excess oxygen
Stoichiometric T
rans
ition
Tem
pera
ture
B
egin
ing
of N
anoc
ryst
allin
e Fi
lms
Grain size 10- 40 nm
-phase
Ga2O3 Films
Amorphous
Substrate Temperature (C)
0 100 200 300 400 500 600 700 800 9004.90
4.95
5.00
5.05
5.10
5.15
5.20
Ban
dgap
(eV)
Temperature (C)
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PVD: Sputtering
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W‐Doped Ga‐OxideW‐Power (Watts)
W‐Content (Atomic %)
0 0
50 5
75 10
100 15
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t = 200 nm
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Crystal Structure – Power dependence
Only Ga-oxide phase is present
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No secondary phase formation
500 C
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Band Gap (Power dependence)
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Reduction by ~0.75-1.00 eV with the inclusion of tungsten into Ga-oxide films!
E.J. Rubio and C.V. Ramana, Appl. Phys. Lett. 102, 191913 (2013).
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Crystal Structure – (Temp. Dependent)
Only β-phase presented for all films.
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Mechanical Characteristics
Hardness & Elastic Modulus increases with W-content
Can be tolerant and impact resistant
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Oxygen Sensor Characteristics
Intrinsic Ga2O3 filmsTime response: 62 sec
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Oxygen Sensor Characteristics
• Ga2O3 based films showed oxygen sensitivity at 700 °C, • As an n-type semiconductor the resistance of the film
increased in the presence of oxygen.• Time response was drastically improved with the
incorporation of tungsten
W (5 at%) - doped Ga2O3 films
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• Increasing W-content reduces sensitivity of the sensors• Time response is increased with increasing W-content• Stability of the electrical properties is reduced with increasing
W-content
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Two Probe Oxygen Sensor Characteristics
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Hot Gas Exposure (600‐700 nm)
•W-doped Ga-oxide demonstrated sensing properties to oxygen at 700 °C.
10%
O2
Ar
15%
O2
Ar
20%
O2
Ar
20%
O2
Time (hrs)
Inte
nsity
(arb
. Uni
ts)
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Gas Exposure plot (600nm, 800nm, 1000nm)
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Intensity vs. Gas Exposure Summary
W-doped films showed being sensible to H2 and O2.
O2 sensitivity increased from 10% to 15% of O2into Ar, but decrease again at 20%
Sensitivity to gases was optimum in Ar environment, but small-to-non response in a mixture of Ar+Air
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0 5000 10000 15000 20000 25000 300000
10000
20000
30000
40000
50000
60000
70000
80000
Z''
Z'
200 C
0 100 200 300 400 500 60020
40
60
80
100
120
140
160
180
Z''
Z'
500 C
Electrical Impedance Analyses
0 2000 4000 6000 8000 10000 12000 14000 160000
2000
4000
6000
8000
0 1000 2000 3000 4000 5000 60000
500
1000
1500
2000
Z''
Z'
15% -Tungsten
Z''
Z'
20% - Tungsten
Ga-oxide
W-dopedGa-oxide
W-dopedGa-oxide
15%20%
0% 0%
500 C
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Crystal Structure – (after annealing)
Deposition Temperature Ts=500 °C;Annealing TemperatureTa=700 °C for 30 min
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Heat Treatment
• β-phase is stable for all films after annealing
• surface morphology suffer porous formation for W-doped films.
• Evidence of W-self diffusion
500 nm
500 nm
500 nm
500 nm
Pure Ga2O3
Pw= 50W
Pw= 100WPw= 75W
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Morphology – Broad View
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How does it work?
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Crystallography: MonoclinicIonic Size:
Comparable (W6+ vs. Ga3+)
Electronegative Values:Similar
W Ga
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Morphology – Broad View
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ImpactJournal Publications:1. E.J. Rubio and C.V. Ramana, Appl. Phys.
Lett. 102, 191913 (2013).2. A.K. Narayana Swamy, E. Shafirovich, and
C.V. Ramana, Ceram. Inter. 39, 7223 (2013).3. S.K. Samala, E.J. Rubio, M. Noor-A-Alam,
G. Martinez, S. Manandhar, V. Shutthanandan, S. Thevuthasan, and C.V. Ramana, J. Phys. Chem. C 117, 4194 (2013).
4. Two others (under preparation)
Conference Presentations:1. International Materials Research Congress (IMRC) – to be
presented (2015)2. Southwest Energy Symposium, 2015, El Paso, TX3. TMS – 2014; ICMCTF - 20154. ICMCTF-2013, San Diego, CA5. AVS International Symposium, 20126. Southwest Energy Symposium, March 24, 2012, El Paso, TX
Education & Training:1. Ernesto J. Rubio: PhD
(Full)2. A.K. Narayana Swamy:
PhD (part of disseration)3. Sampath K. Samala: MS
(thesis)4. Abhilash Kongu: MS
(non-thesis)
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Summary and ConclusionsOptimum conditions were established to fabricate Ga2O3 and W‐doped Ga2O3with the stable β‐phase (monoclinic)Intrinsic Ga2O3 and W‐doped Ga2O3demonstrated to be sensitive to oxygen at high temperatures, with improved time of response for W‐incorporation
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Future Work
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2000 3000 4000 5000 6000700
800
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1100
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1300
1400
25 sccm out75 sccm out
50 sccm out
R
esis
tanc
e (O
hms)
Time (seconds)
BaFeTaO3 -700C
Aerosol Jetdirect write
Engine Part
Film base Nanoink
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Future Work
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AcknowledgementsDOE‐NETLEMSL/PNNL, Richland, WAMichael Carpenter (SUNY)
10/25/2011 UTSR Workshop, Oct. 25-27, 201104/30/2015 DOE Crosscutting Technology Review Meeting
THANK YOU!