NCV51460 - Precision Voltage Reference, 20 mA Micropower · VIN = 5.8 VDC 50 mVAC COUT = 0.1 F MLCC...

© Semiconductor Components Industries, LLC, 2017

March, 2017 − Rev. 01 Publication Order Number:

NCV51460/D

NCV51460

Precision Voltage Reference, 20 mA Micropower

The NCV51460 is a high performance, low power precision voltage reference. This device combines very high accuracy, low power dissipation and small package size. It can supply output current up to 20 mA at a 3.3 V fixed output voltage with excellent line and load regulation characteristics making it ideal for precision regulator applications. It is designed to be stable with or without an output capacitor. The protective features include Short Circuit and Reverse Input Voltage Protection. The NCV51460 is packaged in a 3−lead surface mount SOT−23 package.

Features

• Fixed Output Voltage 3.3 V

• VOUT Accuracy 1% over −40°C to +125°C

• Wide Input Voltage Range up to 28 V

• Low Quiescent Current

• Low Noise

• Reverse Input Voltage Protection

• Stable Without an Output Capacitor

• Available in 3 leads SOT−23 Package

• NCV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC−Q100Qualified and PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHSCompliant

Typical Applications• Precision Regulators, High Accuracy

• Micropower Supplies

• Data Acquisition Systems

• Instrument Equipment

• Cameras, Camcorders, Sensors

NCV51460

GND

3.3 V

Figure 1. Typical Application Schematics

VOUT

VOUTVIN

(3.3 V fixed)CIN

0.1 �F

VIN = 4.2 to 28 V

See detailed ordering and shipping information in the packagedimensions section on page 10 of this data sheet.

ORDERING INFORMATION

SOT−23SN1 SUFFIXCASE 318

MARKING DIAGRAMAND PIN ASSIGNMENT

www.onsemi.com

1

JJM�

�

JJ = Specific Device CodeM = Date Code� = Pb−Free Package(Note: Microdot may be in either location)

GND

VIN VOUT

2

3

(Top View)

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ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

Table 1. PIN FUNCTION DESCRIPTIONÁÁÁÁÁÁÁÁÁÁ

Pin No.ÁÁÁÁÁÁÁÁÁÁÁÁ

Pin Name ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

Description

ÁÁÁÁÁÁÁÁÁÁ

1 ÁÁÁÁÁÁÁÁÁÁÁÁ

VIN ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

Positive Input Voltage



VOUT ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

Regulated Output Voltage



GND ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

Power Supply Ground; Device Substrate

Table 2. MAXIMUM RATINGS

Rating Symbol Value Unit

Input Voltage (Note 1) VIN 30 V

Reverse Input Voltage VIN −15 V

Output Short Circuit Duration, TA = 25°CVIN ≤ 27 VVIN > 27 V

tSC�50

sec

Operating Ambient Temperature Range TA −40 to 125 °C

Maximum Junction Temperature TJ(max) 150 °C

Storage Temperature Range TSTG −65 to 150 °C

ESD Capability, Human Body Model (Note 2) ESDHBM 2000 V

ESD Capability, Machine Model (Note 2) ESDMM 200 V

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionalityshould not be assumed, damage may occur and reliability may be affected.1. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area.2. This device series incorporates ESD protection and is tested by the following methods:

ESD Human Body Model tested per AEC−Q100−002 (EIA/JESD22−A114)ESD Machine Model tested per AEC−Q100−003 (EIA/JESD22−A115)Latch up Current Maximum Rating: ±150 mA per JEDEC standard: JESD78.

Table 3. THERMAL CHARACTERISTICS

Rating Symbol Value Unit

Thermal Characteristics, SOT−23 packageThermal Resistance, Junction−to−Ambient (Note 3)

R�JA 246 °C/W

3. Soldered on 1 oz 50 mm2 FR4 copper area.

Table 4. RECOMMENDED OPERATING RANGES

Rating Symbol Min Max Unit

Operating Input Voltage (Note 4) VIN VOUT + 0.9 28 V

Operating Ambient Temperature Range TA −40 125 °C

Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyondthe Recommended Operating Ranges limits may affect device reliability.4. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area.


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Table 5. ELECTRICAL CHARACTERISTICS (VIN = VOUT + 2.5 V, IOUT = 0, CIN = 0.1 �F, COUT = 0 �F; For typical values TA =25°C, for min/max values −40°C ≤ TA ≤ 125°C unless otherwise noted.) (Note 5).

Parameter Test Conditions Symbol Min Typ Max Unit

Output Voltage VOUT 3.267(−1%)

3.3 3.333(+1%)

V

Line Regulation VIN = VOUT + 0.9 V to VOUT + 2.5 VVIN = VOUT + 2.5 V to VOUT + 20 V

RegLINE −−

15065

500130

ppm/V

Load Regulation IOUT = 0 to 100 �AIOUT = 0 to 10 mAIOUT = 0 to 20 mA

RegLOAD −−−

1100150120

4000400400

ppm/mA

Dropout Voltage Measured at VOUT − 2%IOUT = 0 mAIOUT = 10 mA

VDO−−

0.650.9

0.91.4

V

Quiescent Current IOUT = 0 mA, TA = 25°CIOUT = 0 mA, 0°C ≤ TA ≤ 100°C

IQ −−

140 200220

�A

Output Short Circuit Current VOUT = 0 V, TA = 25°C ISC − 80 − mA

Reverse Leakage VIN = − 15 V, TA = 25°C ILEAK − 0.1 10 �A

Output Noise Voltage (Note 6) f = 0.1 Hz to 10 Hzf = 10 Hz to 1 kHz

VN − 1218

− �VPP�Vrms

Output Voltage TemperatureCoefficient

0°C ≤ TA ≤ 100°C−40°C ≤ TA ≤ 125°C

TCO −−

1834

−−

ppm/°C

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Productperformance may not be indicated by the Electrical Characteristics if operated under different conditions.5. Performance guaranteed over the indicated operating temperature range by design and/or characterization, tested at TJ = TA = 25°C. Low

duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.6. The noise spectral density from 0.1 Hz to 10 Hz is measured, then the integral output noise voltage in this range is calculated. Finally the

peak to peak noise is calculated as 5x integral output noise.

TYPICAL CHARACTERISTICS

Figure 2. Output Voltage vs. Temperature Figure 3. Output Voltage vs. Temperature

TJ, JUNCTION TEMPERATURE (°C)

VO

UT,

OU

TP

UT

VO

LTA

GE

(V

)

IOUT = 0 mACOUT = 0 �F

VIN = VOUT + 20 V

3.2673.2723.2773.2823.2873.2923.2973.3023.3073.3123.3173.3223.3273.332

−40 −20 0 20 40 60 80 100 120 140

VIN = VOUT + 2.5 V VIN = VOUT + 0.9 V

3.2673.2723.2773.2823.2873.2923.2973.3023.3073.3123.3173.3223.3273.332

−40 −20 0 20 40 60 80 100 120 140

TJ, JUNCTION TEMPERATURE (°C)

VO

UT,

OU

TP

UT

VO

LTA

GE

(V

)

VIN = VOUT + 2.5 VCOUT = 0 �F

IOUT = 0 mA

IOUT = 10 mA

IOUT = 20 mA


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Figure 4. Output Voltage vs. Temperature Figure 5. Dropout Voltage

TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 6. Quiescent Current Figure 7. Line Regulation

VIN, INPUT VOLTAGE (V) TJ, JUNCTION TEMPERATURE (°C)

VO

UT,

OU

TP

UT

VO

LTA

GE

(V

)

VD

RO

P, D

RO

PO

UT

VO

LTA

GE

(V

)

I Q, Q

UIE

SC

EN

T C

UR

RE

NT

(�A

)

RE

GLI

NE, L

INE

RE

GU

LAT

ION

(m

V)

3.2673.2723.2773.2823.2873.2923.2973.3023.3073.3123.3173.3223.3273.332

−40 −20 0 20 40 60 80 100 120 140

VIN = 5.8 VIOUT = 0 mACOUT = 0 �F

Unit 1

Unit 2Unit 3

Three Typical Parts

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

−40 −20 0 20 40 60 80 100 120 140

IO = 0 mAIO = 1 mA

IO = 5 mA

IO = 10 mA

IO = 20 mA

0

50

100

150

200

250

300

350

400

450

0 2 4 6 8 10 12 14 16 18 20


TJ = 25°C

TJ = −25°C

TJ = 125°C

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

−40 −20 0 20 40 60 80 100 120 140

VIN = 5.8 to 23.3 V


VIN = 5.8 to 18.3 V

VIN = 5.8 to 15.3 V

VIN = 5.8 to 12.3 V

VIN = 5.8 to 9.3 V

12

10

8

6

4

2

0−40 −20 0 20 40 60 80 100 120 140

RE

GLO

AD

, LO

AD

RE

GU

LAT

ION

(m

V)

Figure 8. Load Regulation SourcingTJ, JUNCTION TEMPERATURE (°C)

VIN = 5.8 VCOUT = 0 �F

IOUT = 0 to20 mA

IOUT = 0 to15 mA

IOUT = 0 to5 mA

IOUT = 0 to1 mA

IOUT = 0 to10 mA

Figure 9. Load Regulation SinkingTJ, JUNCTION TEMPERATURE (°C)

LOA

DR

EG

, LO

AD

RE

GU

LAT

ION

(m

V)

0

20

40

60

80

100

120

140

160

−40 −20 0 20 40 60 80 100 120 140

IOUT = 0 mAdown to −2 mA

IOUT = 0 mAdown to −1.50 mA

IOUT = 0 mAdown to −1.2 mA

IOUT = 0 �A down to −500 �A

VIN = 5.8 VCOUT = 0 �F

COUT = 0 �F


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Figure 10. Short Circuit Current Figure 11. Power Supply Rejection RatioCout = 0 �F

TJ, JUNCTION TEMPERATURE (°C) f, FREQUENCY

I SC

, SH

OR

T C

IRC

UIT

CU

RR

EN

T (

mA

)

40

50

60

70

80

90

100

110

120

130

140

−40 −20 0 20 40 60 80 100 120 140

COUT = 0 �FVIN = 28 V

VIN = 15 V

VIN = 5.8 V

0

10

20

30

40

50

60

70

80

10 100 1000 10k 100k 1M

IOUT = 1 mA

IOUT = 0 mA

IOUT = 20 mA

VIN = 5.8 VDC �50 mVACCOUT = 0 �FTJ = 25°C

0

10

20

30

40

50

60

70

80

10 100 1000 10k 100k 1M

PS

RR

, PO

WE

R S

UP

PLY

RE

JEC

TIO

N R

AT

IO (

dB)

Figure 12. Power Supply Rejection RatioCout = 0.1 �F

f, FREQUENCY

VIN = 5.8 VDC �50 mVACCOUT = 0.1 �F MLCCTJ = 25°C

IOUT = 1 mA

IOUT = 0 mA

IOUT = 20 mA

0

10

20

30

40

50

60

70

80

90

100

10 100 1000 10k 100k 1M

IOUT = 1 mA

IOUT = 20 mA

IOUT = 0 mA

VIN = 5.8 VDC �50 mVACCOUT = 1 �F MLCCTJ = 25°C

Figure 13. Power Supply Rejection RatioCout = 1 �F

f, FREQUENCYPS

RR

, PO

WE

R S

UP

PLY

RE

JEC

TIO

N R

AT

IO (

dB)

PS

RR

, PO

WE

R S

UP

PLY

RE

JEC

TIO

N R

AT

IO (

dB)

0

10

20

30

40

50

60

70

80

90

4 5 6 7 8 9 10 11 12

PS

RR

, PO

WE

R S

UP

PLY

RE

JEC

TIO

N R

AT

IO (

dB)

Figure 14. Power Supply Rejection Ratio vs.Input Voltage

VIN, INPUT VOLTAGE (V)

IOUT = 10 mA, COUT = 0 �F, TA = 25°C

fRIPPLE = 100 Hz

fRIPPLE = 10 kHz

fRIPPLE = 100 kHz

fRIPPLE = 1 MHz

0

10

20

30

40

50

60

70

80

4 5 6 7 8 9 10 11 12

PS

RR

, PO

WE

R S

UP

PLY

RE

JEC

TIO

N R

AT

IO (

dB)

Figure 15. Power Supply Rejection Ratio vs.Input Voltage

VIN, INPUT VOLTAGE (V)

fRIPPLE = 100 Hz

fRIPPLE = 10 kHz

fRIPPLE = 100 kHz

fRIPPLE = 1 MHz

IOUT = 20 mA, COUT = 0 �F, TA = 25°C


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0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

0.1 1 10

Figure 16. Output Voltage Noise 0.1 Hz − 10 Hzf, FREQUENCY (Hz)

Vn,

OU

TP

UT

NO

ISE

(�V

rms/

rtH

z)

VIN = 5.8 VIOUT = 0 mA,COUT = 0 �F,

TA = 25°C

0.1 Hz − 10 Hz Integral Noise:Vn = 2.28 �Vrms

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

10 100 1000 10k 100k 1M

Figure 17. Output Voltage Noise 10 Hz − 1 MHzf, FREQUENCY (Hz)

Vn,

OU

TP

UT

NO

ISE

(�V

rms/

rtH

z)

VIN = 5.8 VIOUT = 0 mA to 20 mA,

COUT = 0 �F,TA = 25°C

10 Hz − 1 kHz Integral Noise:Vn = 18 �Vrms

Vn,

OU

TP

UT

NO

ISE

(�V

rms/

rtH

z)

Figure 18. Output Voltage Noise 10 Hz − 1 MHzCOUT = 0.1 �F

f, FREQUENCY (Hz)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

10 100 1000 10k 100k 1M

IOUT = 1 mA

IOUT = 0 mA

IOUT = 10 mA

IOUT = 20 mA

VIN = 5.8 VIOUT = 0 mA to 20 mA,COUT = 0.1 �F MLCC,

TA = 25°C

0.00.20.40.60.81.01.21.41.61.82.02.22.42.62.83.0

10 100 1000 10k 100k 1M

Vn,

OU

TP

UT

NO

ISE

(�V

rms/

rtH

z)

Figure 19. Output Voltage Noise 10 Hz − 1 MHzCOUT = 1 �F

f, FREQUENCY (Hz)

IOUT = 1 mA

IOUT = 0 mAIOUT = 10 mA

IOUT = 20 mA

VIN = 5.8 VIOUT = 0 mA to 20 mA,COUT = 1 �F MLCC,

TA = 25°C

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

10 100 1000 10k 100k 1M

Vn,

OU

TP

UT

NO

ISE

(�V

rms/

rtH

z)

Figure 20. Output Voltage Noise 10 Hz − 1 MHzCOUT = 10 �F

f, FREQUENCY (Hz)

IOUT = 10 mA

IOUT = 20 mA

IOUT = 1 mA

IOUT = 0 mA

VIN = 5.8 VIOUT = 0 mA to 20 mA,COUT = 10 �F MLCC,

TA = 25°C

3.103.153.203.253.303.353.403.45

Figure 21. Load Transient Response 0 − 10 mA

TIME (20 �s/DIV)

VO

UT,

OU

TP

UT

VO

LTA

GE

(50

mV

/DIV

)

VIN = 0 to 5.8 V, COUT = 0 �F,trise_fall = 10 mA/1 �s, TA = 25°C

IOUT = 0 mA

IOUT = 10 mA

VOUT


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2.72.93.13.33.53.73.94.1

Figure 22. Load Transient Response 0 − 20 mATIME (10 �s/DIV)

VO

UT,

OU

TP

UT

VO

LTA

GE

(20

0 m

V/D

IV)

VIN = 5.8 V, COUT = 0 �F,trise_fall = 20 mA/1 �s, TA = 25°C

IOUT = 0 mAIOUT = 20 mA

VOUT

3.43.32.2

3.43.33.2

3.43.33.2

3.43.32.2

VO

UT,

OU

TP

UT

VO

LTA

GE

(10

0 m

V/D

IV)

Figure 23. Load Transient Responses COUT = 0− 4.7 �F

TIME (50 �s/DIV)

COUT = 0 �F

COUT = 0.1 �F MLCC

COUT = 1 �F MLCC

COUT = 4.7 �F MLCC

VIN = 5.8 V, TA = 25°C,trise_fall = 10 mA/1 �s

VOUT

VOUT

VOUT

VOUT

IOUT = 10 mA

IOUT = 0 mA

6

4

2

0

3

2

1

0

TIME (10 �s/DIV)

VO

UT,

OU

TP

UT

VO

LT-

AG

E (

1 V

/DIV

)V

IN, I

NP

UT

VO

LTA

GE

(2 V

/DIV

)

VIN = 0 V to 5.8 V,CIN = 0 �F, COUT = 0 �F,IOUT = 0 mA, TA = 25°C,

trise = 20 �s

Figure 24. Turn−On

VOUT

VIN

0

1

2

3

4

0

2

6

TIME (50 �s/DIV)

VO

UT,

OU

TP

UT

VO

LT-

AG

E (

1 V

/DIV

)V

IN, I

NP

UT

VO

LTA

GE

(2 V

/DIV

)

VIN = 5.8 V to 0 V,COUT = CIN = 0 �F,

IOUT = 0 mA, TA = 25°C,trise_fall = 25 �s

Figure 25. Turn−Off

VOUT

VIN


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APPLICATIONS INFORMATION

Input Decoupling Capacitor (CIN)It is recommended to connect a 0.1 �F Ceramic capacitor

between VIN and GND pin of the device. This capacitor willprovide a low impedance path for unwanted AC signals ornoise present on the input voltage. The input capacitor willalso limit the influence of input trace inductances and PowerSupply resistance during sudden load current changes.Higher capacitances will improve the Power SupplyRejection Ratio and line transient response.

Output Decoupling Capacitor (COUT)The NCV51460 was designed to be stable without an

additional output capacitor. Without the output capacitor theVOUT settling times during Reference Turn−on or Turn−offcan be as short as 20 �s (Refer to Figure 24 and 25). TheLoad Transient Responses without COUT (Figure 21 and 22)show good stability of NCV51460 even for fast outputcurrent changes from 0 mA to full load. If smaller VOUTdeviations during load current changes are required, it ispossible to add some external capacitance as shown onFigure 26.

NCV51460

GND

3.3 VCIN

0.1 �F

VIN = 4.2 to 28 V VIN VOUTVOUT

COUT

(3.3 V fixed)

Figure 26. Output Capacitor Connection

The COUT will reduce the overshoot and undershoot butwill increase the settling time and can introduce someringing of the output voltage during fast load transients.NCV51460 behavior for different values of ceramic X7Routput capacitors is depicted on Figure 23.

The Output Voltage ringing and settling times can bereduced by using some additional resistance in series withthe Ceramic Capacitor or by using Tantalum or AluminumCapacitors which have higher ESR values. Figure 27 belowshows the Load Transient improvement after adding anadditional 2 � series resistor to a 1 �F Ceramics Capacitor.

3.35

3.30

3.25

3.35

3.30

3.25

VO

UT,

OU

TP

UT

VO

LTA

GE

(50

mV

/DIV

)

Figure 27.

COUT = 1 �F MLCC + 2 �

VIN = 5.8 V, TA = 25°C,trise_fall = 10 mA/1 �s

VOUT

IOUT = 10 mA

IOUT = 0 mA

COUT = 1 �F MLCC

TIME (50 �s/DIV)

The device was determined to be stable with Aluminum,Ceramic and Tantalum Capacitors with capacitancesranging from 0 to 100 �F at TA = 25°C.

Turn−On ResponseIt is possible to achieve very fast Turn−On time when fast

VIN ramp is applied to NCV51460 input as shown onFigure 24. However if the Input Voltage change from 0 V tonominal Input Voltage is extremely fast, the Output Voltagesettling time will increase. Figure 28 below shows this effectwhen the Input Voltage change is 5.8 V / 2 �s.

0

1

2

3

0

2

4

6

TIME (10 �s/DIV)VO

UT,

OU

TP

UT

VO

LT-

AG

E (

1 V

/DIV

)V

IN, I

NP

UT

VO

LTA

GE

(2 V

/DIV

)

Figure 28.

VIN = 0 V to 5.8 V,CIN = 0 �F,

COUT = 0 �F,IOUT = 0 mA, TA = 25°C,

trise = 45 �s

VOUT

VIN


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A 0.1 �F or larger input capacitor will help to decrease thedv/dt of the input voltage and improve stability during largeload current changes.

During the Turn−On for certain conditions the outputvoltage can exhibit an overshoot. The amount of theovershoot strongly depends on application conditions i.e.input voltage level, slew rate, input and output capacitors,and output current. The maximum value of the overshootisn’t guaranteed for this device.

The figure below shows an example of the Turn−Onovershoot.

0

1

2

3

0

2

4

6

VO

UT,

OU

TP

UT

VO

LT-

AG

E (

1 V

/DIV

)V

IN, I

NP

UT

VO

LTA

GE

(2 V

/DIV

)

TIME (10 �s/DIV)

Figure 29.

VIN = 0 V to 6 V,COUT = 0 �F,

IOUT = 1 mA, TA = 25°C,trise = 30 �s

Turn−Off ResponseThe Turn−Off response time is directly proportional to the

output capacitor value and inversely proportional to the loadvalue.

The NCV51460 device does not have any dedicatedinternal circuitry to discharge the output capacitor when theinput voltage is turned−off or disconnected. This is whywhen large output capacitors are used and very small outputcurrent is drawn, it can take a considerable amount of timeto discharge the capacitor. If short turn−off times arerequired, the output capacitor value should be minimized i.e.with no output capacitor a 20 �s turn−off time can beachieved.

Protection FeaturesThe NCV51460 device is equipped with reverse input

voltage protection which will help to protect the devicewhen Input voltage polarity is reversed. In this circumstancethe Input current will be minimized to typically less than0.1 �A.

The short circuit protection will protect the device underthe condition that the VOUT is suddenly shorted to ground.The short circuit protection will work properly up to an InputVoltage of 27 V at TA = 25°C. Depending on the PCB tracewidth and thickness, air flow and process spread this value

can be slightly different and should be confirmed in the endapplication.

No external voltage source should be connected directlyto the VOUT pin of NCV51460 regulator. If the externalsource forces the output voltage to be greater than thenominal output voltage level, the current will start to flowfrom the Voltage Source to the VOUT pin. This current willincrease with the Output Voltage applied and can causedamage to the device if VOUT > 10 V Typ. at 25°C(Figure 30).

0

4

8

12

16

20

24

3 4 5 6 7 8 9 10

I O, C

UR

RE

NT

INT

O V

OU

T P

IN (

mA

)

VOUT, OUTPUT VOLTAGE (V)

Figure 30.

COUT = 0 �F,TA = 25°C

Output NoiseThe NCV51460 Output Voltage Noise strongly depends

on the output capacitor value and load value. This is causedby the fact that the bandwidth of the Reference is inverselyproportional to the capacitor value and directly proportionalto the output current. The Reference bandwidth directlydetermines the point where the output voltage noise starts tofall. This can be observed at the Figure 31 below.

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

10 100 1000 10k 100k 1MVn,

OU

TP

UT

VO

LTA

GE

NO

ISE

(�V

rms/

rtH

z)

f, FREQUENCY (Hz)Figure 31.

COUT = 0.1 �F

VIN = 5.8 VIOUT = 0 mA,

COUT = 0 − 10 �F MLCC,TA = 25°C

COUT = 0 �F

COUT = 1.0 �F

COUT = 10 �F


NCV51460

www.onsemi.com10

The peaks which are visible on the noise spectrum arereflecting the stability of the NCV51460 device. In thecomparison in Figure 31 it can be noticed that 0 �F and10 �F cases represents the best stability.

Thermal CharacteristicsAs power dissipation in the NCV51460 increases, it may

become necessary to provide some thermal relief. Themaximum power dissipation supported by the device isdependent upon board design and layout. The board materialand the ambient temperature affect the rate of junctiontemperature rise for the part. The maximum powerdissipation the NCV51460 can handle is given by:

PD(MAX) �[TJ(MAX) � TA]

R�JA(eq. 1)

Since TJ is not recommended to exceed 100°C (TJ(MAX)),then the NCV51460 can dissipate up to 305 mW when theambient temperature (TA) is 25°C.

The power dissipated by the NCV51460 can be calculatedfrom the following equations:

PD � VIN(IQ@IOUT) � IOUT(VIN � VOUT) (eq. 2)

or

VIN(MAX) �PD(MAX) � (VOUT � IOUT)

IOUT � IQ(eq. 3)

PCB Layout RecommendationsVIN and GND printed circuit board traces should be as

wide as possible. When the impedance of these traces ishigh, there is a chance to pick up noise and cause theregulator to malfunction. Place external components,especially the output capacitor, as close as possible to theNCV51460, and make traces as short as possible.

ORDERING INFORMATION

Device Marking Package Shipping†

NCV51460SN33T1G JJ SOT−23(Pb−Free)

3,000 / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel PackagingSpecification Brochure, BRD8011/D.


SOT−23 (TO−236)CASE 318−08

ISSUE ASDATE 30 JAN 2018

SCALE 4:1D

A1

3

1 2

1

XXXM�

�

XXX = Specific Device CodeM = Date Code� = Pb−Free Package

*This information is generic. Please refer todevice data sheet for actual part marking.Pb−Free indicator, “G” or microdot “ �”,may or may not be present.

GENERICMARKING DIAGRAM*

NOTES:1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.2. CONTROLLING DIMENSION: MILLIMETERS.3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.

MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OFTHE BASE MATERIAL.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,PROTRUSIONS, OR GATE BURRS.

SOLDERING FOOTPRINT

VIEW C

L

0.25

L1e

E E

b

A

SEE VIEW C

DIMA

MIN NOM MAX MINMILLIMETERS

0.89 1.00 1.11 0.035

INCHES

A1 0.01 0.06 0.10 0.000b 0.37 0.44 0.50 0.015c 0.08 0.14 0.20 0.003D 2.80 2.90 3.04 0.110E 1.20 1.30 1.40 0.047e 1.78 1.90 2.04 0.070L 0.30 0.43 0.55 0.012

0.039 0.0440.002 0.0040.017 0.0200.006 0.0080.114 0.1200.051 0.0550.075 0.0800.017 0.022

NOM MAX

L1

H

STYLE 22:PIN 1. RETURN

2. OUTPUT3. INPUT

STYLE 6:PIN 1. BASE

2. EMITTER3. COLLECTOR

STYLE 7:PIN 1. EMITTER

2. BASE3. COLLECTOR

STYLE 8:PIN 1. ANODE

2. NO CONNECTION3. CATHODE


2. ANODE3. CATHODE

STYLE 10:PIN 1. DRAIN

2. SOURCE3. GATE


2. CATHODE3. CATHODE−ANODE

STYLE 12:PIN 1. CATHODE

2. CATHODE3. ANODE

STYLE 13:PIN 1. SOURCE

2. DRAIN3. GATE


2. GATE3. ANODE

STYLE 15:PIN 1. GATE

2. CATHODE3. ANODE


2. CATHODE3. CATHODE

STYLE 17:PIN 1. NO CONNECTION

2. ANODE3. CATHODE

STYLE 18:PIN 1. NO CONNECTION

2. CATHODE3. ANODE


2. ANODE3. CATHODE−ANODE


2. ANODE3. CATHODE


2. ANODE3. GATE


2. SOURCE3. DRAIN

STYLE 1 THRU 5:CANCELLED


2. DRAIN 3. SOURCE


2. CATHODE 3. GATE


2. ANODE 3. NO CONNECTION


2. CATHODE 3. CATHODE

2.10 2.40 2.64 0.083 0.094 0.104HE

0.35 0.54 0.69 0.014 0.021 0.027

c0 −−− 10 0 −−− 10T °°°°

T

3X

TOP VIEW

SIDE VIEWEND VIEW

2.90

0.80

DIMENSIONS: MILLIMETERS

0.90

PITCH

3X

3X 0.95

RECOMMENDED


2. ANODE 3. ANODE

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regardingthe suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specificallydisclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor therights of others.

98ASB42226BDOCUMENT NUMBER:

DESCRIPTION:

Electronic versions are uncontrolled except when accessed directly from the Document Repository.Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

PAGE 1 OF 1SOT−23 (TO−236)

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NCV51460 - Precision Voltage Reference, 20 mA Micropower · VIN = 5.8 VDC 50 mVAC COUT = 0.1 F MLCC...

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