nch FET - 深圳市元之泰电子科技|首页 · nch FET 8 V Ordering Information Part Number...
Transcript of nch FET - 深圳市元之泰电子科技|首页 · nch FET 8 V Ordering Information Part Number...
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Absolute Maximum Ratings (Ta = 25oC)
Characteristics Symbol Rating Unit
Drain-Source Voltage VDSS 80 V
Gate-Source Voltage VGSS ±20 V
Continuous Drain Current (1)
TC=25oC (Silicon Limited)
ID
250
A
TC=25oC (Package Limited) 120
TC=100oC (Silicon Limited) 158
TC=100oC (Package Limited) 120
Pulsed Drain Current IDM 480
Power Dissipation TC=25
oC
PD 312.5
W TC=100
oC 125
Single Pulse Avalanche Energy (2)
EAS 612.5 mJ
Junction and Storage Temperature Range TJ, Tstg -55~150 oC
Thermal Characteristics
Characteristics Symbol Rating Unit
Thermal Resistance, Junction-to-Ambient (1)
RθJA 62.5 oC/W
Thermal Resistance, Junction-to-Case RθJC 0.4
MDP1930 Single N-channel Trench MOSFET 80V, 120A, 2.5mΩ
Features
VDS = 80V
ID = 120A @VGS = 10V
RDS(ON)
< 2.5 mΩ @VGS = 10V
100% UIL Tested
100% Rg Tested
General Description The MDP1930 uses advanced MagnaChip’s MOSFET
Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDP1930 is suitable device for Synchronous Rectification For Server and general purpose applications.
TO-220
D
G
S
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Ordering Information
Part Number Temp. Range Package Packing RoHS Status
MDP1930TH -55~150oC TO-220 Tube Halogen Free
Electrical Characteristics (TJ =25oC)
Characteristics Symbol Test Condition Min Typ Max Unit
Static Characteristics
Drain-Source Breakdown Voltage BVDSS ID = 250μA, VGS = 0V 80 - - V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250μA 2.0 - 4.0
Drain Cut-Off Current IDSS VDS = 64V, VGS = 0V - - 1.0 μA
Gate Leakage Current IGSS VGS = ±20V, VDS = 0V - - ±0.1
Drain-Source ON Resistance RDS(ON) VGS = 10V, ID = 50A - 2.0 2.5 mΩ
Forward Transconductance gfs VDS = 10V, ID = 50A - 115 - S
Dynamic Characteristics
Total Gate Charge Qg
VDS = 40V, ID = 50A, VGS = 10V
- 186.3 -
nC Gate-Source Charge Qgs - 56.3 -
Gate-Drain Charge Qgd - 38.5 -
Input Capacitance Ciss
VDS = 40V, VGS = 0V, f = 1.0MHz
- 12,222 -
pF Reverse Transfer Capacitance Crss - 51 -
Output Capacitance Coss - 2,123 -
Turn-On Delay Time td(on)
VGS = 10V, VDS = 40V, ID = 50A , RG = 3.0Ω
- 39.6 -
ns Rise Time tr - 24.2 -
Turn-Off Delay Time td(off) - 141 -
Fall Time tf - 54.2 -
Gate Resistance Rg f=1 MHz - 3.0 - Ω
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage VSD IS = 50A, VGS = 0V - 0.9 1.2 V
Body Diode Reverse Recovery Time trr IF = 50A, dl/dt = 100A/μs
- 92.8 ns
Body Diode Reverse Recovery Charge Qrr - 231.7 nC
Note :
1. Surface mounted FR-4 board by JEDEC (jesd51-7). Continuous current at TC=25 is silicon limited
2. EAS is tested at starting Tj = 25, L = 1.0mH, IAS = 35.0A, VGS = 10V.
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Fig.5 Transfer Characteristics
Fig.1 On-Region Characteristics Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
Fig.3 On-Resistance Variation with Temperature
Fig.4 On-Resistance Variation with
Gate to Source Voltage
Fig.6 Body Diode Forward Voltage Variation with Source Current and
Temperature
0.0 0.3 0.6 0.9 1.2 1.5
1
10
100
TA=25
※ Notes :
VGS
= 0V
I DR,
Re
ve
rse
Dra
in C
urr
en
t [A
]
VSD
, Source-Drain voltage [V]
-50 -25 0 25 50 75 100 125 1500.0
0.5
1.0
1.5
2.0
2.5
※ Notes :
1. VGS
= 10 V
2. ID = 50 A
RD
S(O
N),
(Norm
aliz
ed)
Dra
in-S
ourc
e O
n-R
esis
tance
TJ, Junction Temperature [
oC]
4 5 6 7 8 9 100
2
4
6
8
10
12
14
16
18
20
※ Notes :
ID = 50A
TA = 25
RD
S(O
N) [m
Ω],
Dra
in-S
ourc
e O
n-R
esis
tance
VGS
, Gate to Source Volatge [V]
0 10 20 30 40 50 60 70 80 90 1000.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VGS
= 10V
Dra
in-S
ourc
e O
n-R
esis
tance [mΩ
]
ID, Drain Current [A]
0 1 2 3 4 5 6 7 80
10
20
30
40
50
60
70
80
90
100
VGS
, Gate-Source Voltage [V]
TA=25
※ Notes :
VDS
= 10V
I D,
Dra
in C
urr
en
t [A
]
0 1 2 3 4 50
20
40
60
80
100
120
140
160
180
20010 V
5.0 V
6.0 V
4.5 V
4.0 V
I D D
rain
Cu
rre
nt
[A]
VDS
, Drain-Source Voltage [V]
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Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteristics
Fig.9 Maximum Safe Operating Area Fig.10 Maximum Drain Current vs.
Case Temperature
Fig.11 Transient Thermal Response
Curve
25 50 75 100 125 1500
40
80
120
160
200
240
280
I D, D
rain
Curr
ent [A
]
TC, Case Temperature [ ]
10-5
10-4
10-3
10-2
10-1
100
101
10-5
10-4
10-3
10-2
10-1
100
※ Notes :
Duty Factor, D=t1/t
2
PEAK TJ = P
DM * Z
θ JC * R
θ JC(t) + T
C
single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
Zθ
JA(t
), T
herm
al R
esponse
t1, Rectangular Pulse Duration [sec]
0 5 10 15 20 25 30 35 400
2000
4000
6000
8000
10000
12000
14000
16000
Ciss
= Cgs
+ Cgd
(Cds
= shorted)
Coss
= Cds
+ Cgd
Crss
= Cgd
※ Notes ;
1. VGS
= 0 V
2. f = 1 MHz
Crss
Coss
Ciss
Ca
pa
cita
nce
[p
F]
VDS
, Drain-Source Voltage [V]0 10 20 30 40 50 60 70 80 90 100110120 130140150160170 1801902000
2
4
6
8
10
VDS
= 40V
※ Note : ID = 50A
VG
S, G
ate
-Sourc
e V
oltage [V
]
QG, Total Gate Charge [nC]
10-1
100
101
102
10-1
100
101
102
103
1 ms
100 ms
10 ms
DC
100 us
Operation in This Area
is Limited by R DS(on)
Single Pulse
TJ=Max rated
TC=25
I D,
Dra
in C
urr
en
t [A
]
VDS
, Drain-Source Voltage [V]
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Package Dimension
3 Leads, TO-220
Dimensions are in millimeters unless otherwise specified
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DISCLAIMER:
The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller.
MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd.