Nanotechnology in NEC FRL
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Transcript of Nanotechnology in NEC FRL
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Nanotechnology in NEC FRL
Jun’ichi Sone
Fundamental Research Labs NEC Corporation
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Chemistry
Molecular Electronics NEMS
MechanicallyStrong Material
Nanotechnology
Quantum Devices
MolecularEngineering
Atom-
Molecular
Manipulation
Expectation of Nanotechnology
Miniaturization of Semiconductor Devices Molecular Engineering Atom Molecular Manipulation DNA-Protein Manipulation
Expectation of new technology domain and new market
Carbon Nanotube
Fuel Cell
Nanobio Devices
Lifescience
DNA
Protei
n
Manipulatio
n
Sem
icon
duct
or
min
iatu
riza
tion
Electronics
Mechanics
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Nanotechnology Vision
2000S D
,f
8nm
S D
,f
8nm
S D
,f
8nm
S D
,f
8nm
Nanotechnology Basic technology
30nm50nm
Nano Material Characterization
3D NanostructureFabrication
Size::1
0nm
5nm
Nano Pattern Fabrication
1nm2010
Fuel Cell
100nm
?§Œä“d‹É
ƒ^ƒ“ƒpƒN?¿DNA
?§Œä“d‹É
ƒ^ƒ“ƒpƒN?¿DNA
TerabitMemory
Quantum bit Devices
QuantumComputer
NanotubeElectron Devices
NEMS Electron Devices
Nano-bio Devices
Next generation lithography
(70~ 100nm)Next generation SOC Devices(70~ 100nm)
Device Physics
Roadmap Technology
Field EmissionDisplay
Sem
icond
uctor
Break
throu
gh D
evices
CNT (carbon nanotube)Interdisciplinary
New Devices
AtomSwitch
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3. Pursuing of semiconductorminiaturization limit and
exploring breakthrough devicesNanofabrication technology
Pursuit of miniaturization limit in Si MOSFET operation
Quantum bit devices for Q-computing
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YEAR
MP
U g
ate
len
gth
(n
m)
Updated version of ITRS2000
1. Roadmap for Si-LSIs
Gate length reduction to realize higher Performance in MOSFET
Issues
Nanofabrication technology
Quantum Effect Increase of leakage current due to tunneling current
8nm MOSFET demonstration
Leading edge of R & D
1990 2000 2010 202010
100
1990 2000 2010 202010
100
~100nm technology(ASUKA Pj)
Current development phase
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The world smallest 10nm pattern using originally developed
high-resolution resist.
Nanofabrication technology
10nm-width resist patternexposed by electron beam
4-methyl-1-acetoxycalixarene
(MC6AOAc)
CH3
OCOCH3
CH2[ ]6
CH3
OCOCH3
CH2[ ]6
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I-V characteristics (room temperature) SEM imageof an 8-nm gate region
Exploring miniaturelized Si-MOSFET operation limit
Demonstration of 8-nm-gate MOSFET operation
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Ultra-low power device enabling 1-bit operation by a single electron (5~6 orders of magnitude lower energy consumption compared to MOSFETs)
Demonstration of RT operation in single electron devices with islands of sub-10nm
Metallic Single Electron Devices
-4 -2 0 2 4
0.00
0.05
0.10
0.15 V=2 mVT=4.2 K
Dra
in C
urr
en
t (n
A)
Gate Volatage (V)
Schematic view of a single electron device Gate control characteristics
Si substratesource drain
Al/AlOx/Al tunnel junctions
island
Gate
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Quantum ComputingQuantum Computing
1
0
0> + 1>
P=12
P=12
1>
0>
Observation
Superposition
Single quantum bit
?
C-ComputingQ-Computing
2N states can be represented by N q-bits (36 billion by N=60)
Operation by keeping wave-function nature (Super parallel)
Issues: Integration, Long life of quantum bit states
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Single Cooper-pair BoxSingle Cooper-pair Box
GateGate
SQUIDSQUID
Multi-qubit operation, scaling Increase possible # of elementary gate operation (Q > 103)
The first solid state qubit demonstrated (1999 Nishina Award)
Riken Project funding (starting October, 2001)
The first solid state qubit demonstrated (1999 Nishina Award)
Riken Project funding (starting October, 2001)
Utilizing quantum mechanical principle to revolutionize the
concept of computing
Next steps:
Possible high-speed computing Possible high-speed computing applicationsapplications Decoding (factoring), Date search, NP complete problems (?)
Quantum bit deviceQuantum bit device
1m
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Carbon Nanotube(CNT)New Applications
Features of CNT
Applications Fuel Cell for Mobile Application
Field Emission Display Application
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2002 Benjamin Franklin Medal to Dr.S.Iijimafor the discovery of carbon nanotube and the contribution
to the progress of nanotechnology
Benjamin Franklin MedalPhysics Award January 2002
Carbon nanotube
Dr.Sumio Iijima
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Features of Carbon nanotubeElectrical properties
Transistor,Wiring,FED
Metal Semiconductor
Metalic or Semiconducting conduction depending on chiralitiesAppearance of Quantum Effect due to 1-d structureHighly-Effective Electron Emission
Chemical:Adsorption, Storage, CatalystsChemical modification, Composites
Fuel cellsSensors
Mechanical:Super strong structure Due to C-C bonds Composite materials
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Nanotechnology
ElectronEmission
Flat Panel DisplayMicrowave Tube
Chemistry
Adsorption MaterialSensor, Catalyst
Electronics
Transistor, Sensor,Interconnection,
Quantum bit
Composite Material
Electrical conducting PlasticsReinforced Material
Carbon Nanotube
Energy
Fuel Cell, Gas Storage
Lithium Ion Battery,Super Capacitor
AFM, STMManipulationNanomachine
Application of Carbon Nanotube
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SW Carbon Nanohorn aggregates
Single wall carbon nanohorns
Single Wall Carbon Nanohorns
Iijima, S. et al. Chem. Phys. Lett. 309, 165 (1999).
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Mobile Fuel Cells using Carbon NanohornsMobile Fuel Cells using Carbon Nanohorns
TEM images of CNHPrinciple of a Fuel Cell
Ultra-High Electrical Energy Capacity 10 times higher than Li battery
Nano-structure suitablefor supporting catalyst
Fuel Cartridge
Cell
Mobile Fuel Cell
CH3OH H+
e
O2CH3OH H+
e
O2CH3OH H+
ee
eeeeeeee
CNH
Pt catalyst
O2
H2O
Fuelair
Polymerfilm
20% increase in output electrical energy by using carbon nanohorn
CO2
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Polymer electrolytemembrane
H2 O2
Gas diffusionelectrodes
Comparison of Fuel Cell Output
Nanohorn
Conventional carbon
material
H2/O2 Cell at RT
20% increase of current density by using carbon nanohorn electrodes
0 100 200 3000
200
400
600
800
1000 RT
Furnace black
SWNH
Cel
l vo
ltag
e (m
V)
Current density (mA/cm2)
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TEM images of Nanohorn with Pt catalyst
Carbon nanohornConventional carbon material (acetylene black)
※ Black particles : Pt catalyst
・ Finer Pt catalyst is dispersed homogeneously on the surface of carbon nanohorns・ Finer particles have better catalyst capability
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Prototype of carbon-nanohorn fuel cell JST, Sansouken, NEC
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6. Exploring Interdisciplinary New Devices
Nanobio devices “Fusion of electronics and biotechnolo
gy”NEMS devices “Fusion of electronics and mechanics
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Schematics of NEMS nanobio devices
Nanobio devices
High-precision separation : Artificial gel
制御電極
ProteinDNA
Control electrode
DNA
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2.75m
Nano wineglass made of Diamond-like-Carbon
Demonstration of three-dimensional nanostructure fabrication
(collaborated with Himeji Inst. Technol. & SII Inc.:Nikkei BP award)
3-D nanostructure fabrication By FIB-CVD
Nanobio devices, NEMS(nano-scale electro-mechanical sysytem),
Electro-mechanical switches
Fabrication of three-dimensionalnanostructures
Focused-ion-beam chemical-vapor-deposition
Nano-coil
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2.75m
New market, New industry Nanotechnology
FIB excited chemical reaction(3-dimensional nanostructure)
EB lithography with calix-arene resist(2-dimensional nanopattern)
Beam fabrication
Top down
Bottom upSelf assembled organic membrane
Fine particle DNA
C60
Self assembledChemical reaction
Chemical modification Carbon nanotube(Diameter ~1nm
Smoothness in atomic level)