Nanostructures at metal oxide and semiconductor boundaries (Engl)
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Transcript of Nanostructures at metal oxide and semiconductor boundaries (Engl)
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Electrochemical nanostructures: finishing and characterization
Vlad Shershulsky’s background
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Anodizing
Anodizing – electrochemical metal or semiconductor treatment process invoking surface electrolytic oxidation and etching.
G. Wood, J. O’Sullivan, B. Vaszko,
J.Electrochem.Soc.115 (1968) 618
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Fundamental
Beautiful example of synergetic self-organization in an open system far from thermodynamic equilibrium – from plain surface without any distinguished size to spatial pattern formation
Wehrspohn R., Nielsch K., Birner A., Schilling J., Muller F., Li A.
http://www.mpi-halle.mpg.de/mpi/publi/pdf/939_01.pdf
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Applied: cornerstone of nanotechnology
• Photonic crystals
• Light emitters
• Nanotube fabrication templates
• Drag delivery nano-containers
• Bio-compatible implants
• Membranes
• Catalysts
• Surface protectors
• Micro-Assemblies
• And more…
Choi J., Sauer G., Nielsch K.,
Wehrspohn R., Gösele U.,
Chem. Mater., 15 (2003) 776
A. Birner, A. P. Li, F. Müller, U. Gösele, P. Kramper, V. Sandoghdar, J. Mlynek, K. Busch, V. Lehmann. Mater. Sci. Semicond. Proc. 3 (2000) 487–491
Xianglong Zhao et all.http://www.nature.com/srep/2013/130719/srep02238/full/srep02238.html
Matsumoto F., Kamiyama M.,
Nishio K., Masuda, H. Jpn. J.
Appl. Phys., 44 (2005) L355
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Some results: pore size
Parkhutik V., Shershulsky V.
Theoretical modelling of porous oxide
growth on aluminium. – J. Phys. D:
Appl. Phys. 25 (1992) 1258 - 1263.
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Going further: unified model and stability analyses
Boundary dynamics for non-equilibrium open system
and analogy with hydrodynamics
Continuity equation 𝛻2𝜑 = 0
Integral Bernoulli-Coochie 𝜑𝑡 + 𝑉 𝛻𝜑 2 = 𝑃0− 𝑃
Kinematic boundary
condition𝑓𝑡 + 𝑉 𝛻𝑓 ∙ 𝛻𝜑 = 0
Dynamic boundary
condition
𝜑 = 0or
𝜑𝑡 + 𝑉 𝛻𝜑 2 = 0
Internal boundary dynamics for linear stability analyses
𝑦 = 𝜂(𝑥1, 𝑥2), 𝜙 = 𝜑0+ 𝐸0𝑦
𝜑𝑡 + 𝑉 𝛻𝜑 2 = 𝑃0− 𝑃
𝜙 = 𝜙0 exp 𝑖 𝑘1𝑥1+ 𝑘2𝑥2 + 𝜇𝑦 + 𝜈𝑡η = 𝜂0 exp 𝑖 𝑘1𝑥1+ 𝑘2𝑥2 + 𝜈𝑡
𝜇 = (𝑘12 + 𝑘2
2)1/2
𝜈 = 𝜇𝐸0𝑑
𝑑𝐸𝑉𝐸 |𝐸=𝐸0
When plain oxide reaches critical
thickness 𝐿∗ = 𝑈/𝐸∗ flat boundary
stability breaks
𝑑
𝑑𝐸𝑉𝐸 |𝐸=𝐸0 = 0
for all spatial wavelengths
simultaneously, which leads to short
length noise growth (pore nucleation),
followed by the stage of self-
organization with specific
characteristic spatial size / dimension. Parkhutik V., Shershulsky V. Theoretical modelling
of porous oxide growth on aluminium. – J. Phys.
D: Appl. Phys. 25 (1992) 1258 - 1263.
Furneaux R., Rigby
W., Davidson A. The
formation of
controlled-porosity
membranes from
anemically oxidized
aluminium. Nature
337 (1989), 147
Shershulsky V., Parkhutik V., Makushok
Y., Yakovlev D. Novel methods of
boundary fractal dynamics:
development and practical
applications. Final report F12-059 to
Fundamental Research Foundation. –
Minsk, Belarus (1992) 204 pp.
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Numerical simulation: self-organization and transition effects
Lancerotti L., Brown W.,
Poate J., Augustyniak W.,
Nucleation and groth of
porous anodic films on
aluminiumNature 272
(1978), 433 Shershulsky V., Ph.D. Thesis (1992)
Chen Shuoshuo, Ling Zhiyuan,
Hu Xing, Yang Huia, Li Yia. J.
Mater. Chem., 20 (2010) 1794
S. Ronnebeck S., Carstensen
S., Ottow S., Föll H. J POROUS
MA, 7(1-3) (2000) 353
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Numerical simulation: porous boundary properties
2D cellular automata
numerical solution for
system of nonlinear
special differential
equations with moving
boundaries
Shershulsky V., Parkhutik V., Makushok Y.,
Yakovlev D. Novel methods of boundary
fractal dynamics: development and practical
applications. Final report F12-059 to
Fundamental Research Foundation. – Minsk,
Belarus (1992) 204 pp. (in Russian)
Shershulsky V., Ph.D Thesis (1992)
Parkhutik V., Albella J., Martinez-Duart J.
Gomez-Rodrigues J., Baro A., Shershulsky V.
Different types of pores in porous silicon. –
Appl.Phys.Let. 62 (1993) 366 – 368
Hidetsugu Sakaguchi and Jie Zhao.
Phys. Rev. E 81 (2010) 031603
Cheng C., Ng K., Aluru N., Ngan A. J.
Appl. Phys. 113 (2013) 204903
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Some prospects
• 3D simulation. Surprisingly still not accomplished.
• More realistic models, taking into account surface states, field effects, space charge, internal stress, and viscosity.
• Quantum electrochemistry of curved surface and quantum ballistic model.
• Computational optics of electrochemically treated surface.
• Molecular transport in pore systems and gas- and hydrodynamics at nano-scale.
• CAD-ready design and simulation software modules.
• Experimental and production ready fabrication processes tuning.
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Summary
Porous nature of anodic aluminum oxide was determined in early 50-th.
Anodizing draw even more attention in 90-th with demonstration of efficient visible light emission from porous silicon. Pore formation and surface self-organization formed one of the first and the most important branches of contemporary nanotechnology.
I was fortunate to serve as a theorist in one of the most active research groups in this field, to propose model of pore formation currently in wide use, to explain linear dependence of pore size on anodizing potential, and to make first successful computer simulations of pore growth.
Surface nano-electrochemistry remains the area of active research and the source of new technologies. Recent results reported by various groups in 2010+ share many of our approaches and confirm most of our main findings.
And that is not the only area of my interests in R&D
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ThanksVladislav Shershulsky
+7 903 7980571