Nanosecond Thermal Processing for Self-Aligned Silicon-on ...308 nm XeCl Excimer Laser Activation of...

26
TECHNICAL DOCUMENT 3195 April 2005 Nanosecond Thermal Processing for Self-Aligned Silicon-on-Insulator Technology A. D. Ramirez B. W. Offord J. D. Popp S. D. Russell J. F. Rowland Approved for public release; distribution is unlimited. SSC San Diego

Transcript of Nanosecond Thermal Processing for Self-Aligned Silicon-on ...308 nm XeCl Excimer Laser Activation of...

Page 1: Nanosecond Thermal Processing for Self-Aligned Silicon-on ...308 nm XeCl Excimer Laser Activation of Dopants During Melt Regime, Removal of Damage Caused by Implantation, and Formation

TECHNICAL DOCUMENT 3195 April 2005

Nanosecond Thermal Processing for Self-Aligned Silicon-on-Insulator

Technology

A. D. Ramirez B. W. Offord

J. D. Popp S. D. Russell

J. F. Rowland

Approved for public release; distribution is unlimited.

SSC San Diego

Page 2: Nanosecond Thermal Processing for Self-Aligned Silicon-on ...308 nm XeCl Excimer Laser Activation of Dopants During Melt Regime, Removal of Damage Caused by Implantation, and Formation

TECHNICAL DOCUMENT 3195 April 2005

Nanosecond Thermal Processing for Self-Aligned Silicon-on-Insulator

Technology

A. D. Ramirez B. W. Offord

J. D. Popp S. D. Russell

J. F. Rowland

Approved for public release; distribution is unlimited.

SSC San Diego

San Diego, CA 92152-5001

Page 3: Nanosecond Thermal Processing for Self-Aligned Silicon-on ...308 nm XeCl Excimer Laser Activation of Dopants During Melt Regime, Removal of Damage Caused by Implantation, and Formation

SSC SAN DIEGO San Diego, California 92152-5001

T. V. Flynn, CAPT, USN Commanding Officer

R. F. SmithExecutive Director

ADMINISTRATIVE INFORMATION The work described in this report was performed for the Office of Naval Research Internal Applied

Research (IAR) Program by the Electromagnetics & Advanced Technology Division (Code 285) of SPAWAR Systems Center San Diego (SSC San Diego).

Released under authority of S. D. Russell, Head Electromagnetics & Advanced Technology Division

This is a work of the United States Government and therefore is not copyrighted. This work may be copied and disseminated without restriction. Many SSC San Diego public release documents are available in electronic format at http://www.spawar.navy.mil/sti/publications/pubs/index.html

SB

Page 4: Nanosecond Thermal Processing for Self-Aligned Silicon-on ...308 nm XeCl Excimer Laser Activation of Dopants During Melt Regime, Removal of Damage Caused by Implantation, and Formation

1

Am

eric

an P

hysi

cal S

ocie

ty22

–26

Mar

ch 2

004,

Mon

trea

l, Q

uebe

c, C

anad

a

Aya

x D

. Ram

irez,

Bru

ce W

. Offo

rd, J

erem

y D

. Pop

p,

Step

hen

D. R

usse

ll, J

ason

F. R

owla

nd

Spac

e an

d N

aval

War

fare

Sys

tem

s C

ente

r Sa

n D

iego

, CA

Nan

osec

ond

Ther

mal

Pro

cess

ing

for S

elf-A

ligne

d Si

licon

-on-

Insu

lato

r Tec

hnol

ogy

Page 5: Nanosecond Thermal Processing for Self-Aligned Silicon-on ...308 nm XeCl Excimer Laser Activation of Dopants During Melt Regime, Removal of Damage Caused by Implantation, and Formation

2

Abs

trac

tFu

ture

rada

r and

com

mun

icat

ions

sys

tem

s w

ill h

ave

the

need

to u

se C

MO

S

inte

grat

ed c

ircui

ts to

pro

vide

incr

ease

d an

alog

and

dig

ital f

unct

ions

. C

onve

ntio

nal C

MO

S te

chno

logy

has

bee

n lo

cked

into

des

igni

ng p

roce

sses

ar

ound

pol

ysili

con

gate

mat

eria

l bec

ause

of t

he n

eed

for s

elf-a

lignm

ent.

Low

-res

ista

nce

met

al g

ates

are

sup

erio

r for

hig

h-sp

eed

devi

ces.

How

ever

, th

eir l

ow m

eltin

g po

int p

reve

nted

thei

r use

in a

sel

f-alig

ned

stru

ctur

e th

at

expe

rienc

es h

igh-

tem

pera

ture

pro

cess

ing

(>70

0 o C

). S

ilico

n-on

-Insu

lato

r (S

OI)

tech

nolo

gy, n

on-re

fract

ory

met

al g

ates

, and

nan

osec

ond

lase

r pr

oces

sing

wer

e us

ed to

fabr

icat

e a

self-

alig

ned

stru

ctur

e.

Thes

e te

chni

ques

will

allo

w fu

rther

sca

ling

of C

MO

S d

evic

es a

nd e

nabl

e m

ixed

-mod

e de

vice

s to

be

inte

grat

ed o

n th

e sa

me

subs

trate

. Th

e la

ser i

s us

ed to

rapi

dly,

on

the

orde

r of n

anos

econ

ds, m

elt a

nd re

dist

ribut

e th

e im

plan

ted

dopa

nts

for t

he s

ourc

e an

d dr

ain

with

min

imal

late

ral d

iffus

ion,

whi

ch lo

wer

s pa

rasi

tic g

ate

to d

rain

and

sou

rce

over

lap

capa

cita

nce.

Gat

e re

sist

ance

can

be

low

ered

by

at le

ast a

n or

der o

f mag

nitu

de a

nd o

ptim

al

thre

shol

d co

ntro

l of p

MO

S a

nd n

MO

S d

evic

es c

an b

e ac

hiev

ed b

y us

ing

an

alum

inum

met

al g

ate

inst

ead

of a

pol

ysilic

on g

ate.

Thi

s pr

oces

s al

low

s hi

gh-

perfo

rman

ce, l

ow-p

ower

dig

ital t

echn

olog

y to

be

inte

grat

ed w

ith h

igh

F max

, lo

w-n

oise

RF

devi

ces.

Page 6: Nanosecond Thermal Processing for Self-Aligned Silicon-on ...308 nm XeCl Excimer Laser Activation of Dopants During Melt Regime, Removal of Damage Caused by Implantation, and Formation

3

Bac

kgro

und

Ther

e is

a n

eed

for d

eepl

y sc

aled

CM

OS

inte

grat

ed c

ircui

ts (I

Cs)

to

prov

ide

mix

ed-m

ode

oper

atio

n (a

nalo

g an

d di

gita

l). A

s IC

dev

ice

dim

ensi

ons

decr

ease

into

the

deep

-sub

mic

ron

rang

e, ti

ghte

r con

trol o

n do

pant

redi

strib

utio

n du

ring

the

IC p

roce

ss h

as b

ecom

e m

ore

rele

vant

. M

inor

var

iatio

ns in

the

dopa

nt d

istri

butio

n co

uld

lead

to la

rge

diffe

renc

es

in th

e el

ectri

cal p

rope

rties

of j

unct

ion

devi

ces.

The

need

for s

elf-a

lignm

ent h

as d

icta

ted

the

use

of p

olys

ilico

n ga

tes

whe

n de

sign

ing

CM

OS

dev

ices

. B

ecau

se th

e C

MO

S p

roce

ss re

quire

s a

high

-tem

pera

ture

pro

cess

to a

nnea

l the

sou

rce

and

drai

n im

plan

ts a

fter

the

gate

def

initi

on (w

hich

lead

s to

sel

f-alig

nmen

t), m

etal

gat

es w

ere

disc

arde

d. I

n ge

nera

l, lo

w-r

esis

tivity

met

al g

ates

are

sup

erio

r for

hig

h-sp

eed

devi

ces

as w

ell a

s hi

ghFm

ax a

nd lo

w-n

oise

pro

perti

es; h

owev

er,

thei

r low

mel

ting

poin

t was

wha

t led

tech

nolo

gy to

use

poly

silic

on.

Page 7: Nanosecond Thermal Processing for Self-Aligned Silicon-on ...308 nm XeCl Excimer Laser Activation of Dopants During Melt Regime, Removal of Damage Caused by Implantation, and Formation

4

Lase

r Ann

ealin

g an

d D

opan

t Act

ivat

ion

Silic

on

Impl

ante

d

Dop

ants

λ=

308

nmXe

Cl E

xcim

er L

aser

Act

ivat

ion

of D

opan

ts

Dur

ing

Mel

t Reg

ime,

R

emov

al o

f Dam

age

Cau

sed

by Im

plan

tatio

n, a

nd

Form

atio

n of

Sha

llow

Ju

nctio

ns.

APP

RO

AC

H

•Sel

f-Alig

ned

Met

al G

ate

•Sili

con-

on-In

sula

tor (

SOI)

Tech

nolo

gy

•Nan

osec

ond

Ther

mal

Pro

cess

ing

with

Exc

imer

Las

er

Page 8: Nanosecond Thermal Processing for Self-Aligned Silicon-on ...308 nm XeCl Excimer Laser Activation of Dopants During Melt Regime, Removal of Damage Caused by Implantation, and Formation

5

Phys

ical

Str

uctu

re o

f a P

oly

Gat

e (S

OI)

MO

SFET

Si S

ubs

trat

e

Bu

ried

Oxi

de

(BO

X)

N+

Gat

e

N+

Sou

rce

P B

ody

N+

Dra

in

Met

al

Inte

rcon

nect

Poly

gat

eSi

licon

Bur

ied

Oxi

de

Con

vent

iona

l Pol

y G

ate

Tech

nolo

gy

Page 9: Nanosecond Thermal Processing for Self-Aligned Silicon-on ...308 nm XeCl Excimer Laser Activation of Dopants During Melt Regime, Removal of Damage Caused by Implantation, and Formation

6

BO

X

Usi

ng A

l as t

he m

ater

ial f

or th

e m

etal

gat

e cr

eate

s a d

evic

e th

at h

as a

t lea

st a

n or

der

of m

agni

tude

low

er g

ate

resi

stan

ce

than

a si

licid

e po

lyga

te.

Met

al G

ate

Tech

nolo

gy

Al

Silic

on

TiN

Gat

e O

xide

3800

Å

70 Å

0.25

-mic

ron

Gat

e Le

ngth

Phys

ical

Str

uctu

re o

f a M

etal

Gat

e (S

OI)

MO

SFET

Page 10: Nanosecond Thermal Processing for Self-Aligned Silicon-on ...308 nm XeCl Excimer Laser Activation of Dopants During Melt Regime, Removal of Damage Caused by Implantation, and Formation

7

Bur

ied

Oxi

deSi

licon

Gat

e O

xide

Met

al G

ate

0.05

µm

Impl

ant S

ito

set

volta

ge th

resh

old

of M

OSF

ET, g

row

ga

te o

xide

,de

posi

t, et

ch

alum

inum

gat

eMET

AL

GA

TE (S

OI)

MO

SFET

: TH

E PR

OC

ESS

Bur

ied

Oxi

deSi

licon

Gat

e O

xide

Met

al G

ate

Cha

nnel

0.05

µm

Impl

ant a

rsen

ic

ions

to c

reat

e so

urce

/dra

in o

f tr

ansi

stor

Page 11: Nanosecond Thermal Processing for Self-Aligned Silicon-on ...308 nm XeCl Excimer Laser Activation of Dopants During Melt Regime, Removal of Damage Caused by Implantation, and Formation

8

0.05

µm

Bur

ied

Oxi

deSilic

onG

ate

Oxi

de

Met

al G

ate

Expo

se w

afer

to L

aser

en

ergy

to a

ctiv

ate

impl

ante

d ar

seni

c

Lase

r Lig

ht R

efle

cted

by

Met

al G

ate

MET

AL

GA

TE (S

OI)

MO

SFET

: TH

E PR

OC

ESS

Bur

ied

Oxi

deN

+ So

urce

SOU

RC

Eco

ntac

t

P ty

pe S

ilico

n

DR

AIN

cont

act

Gat

e O

xide

Cha

nnel

0.05

µm

N+

Dra

in

Dep

osit

oxid

e, p

atte

rn,

etch

con

tact

s an

d m

etal

in

terc

onne

ct, e

nd

prod

uct

Met

al G

ate

Page 12: Nanosecond Thermal Processing for Self-Aligned Silicon-on ...308 nm XeCl Excimer Laser Activation of Dopants During Melt Regime, Removal of Damage Caused by Implantation, and Formation

9

Expe

rimen

tal R

esul

ts

Exci

mer

Las

erO

ptic

s &

Pro

cess

ing

Cha

mbe

r

FIG

. 1 P

rimar

y C

ompo

nent

s of

the

Exci

mer

Las

er P

roce

ssin

g Sy

stem

SOI W

afer

s C

hara

cter

istic

sM

ater

ial

Ion

Impl

ante

d w

ith A

s at

a d

ose

of

5 x

1015

/cm

2@

30 K

eVO

rient

atio

n<0

01>

SIM

S A

naly

sis

Per

form

ed to

det

erm

ine

carri

er c

once

ntra

tion

SiT

hick

ness

700

ÅS

RP

Ana

lysi

s pe

rform

ed to

det

erm

ine

perc

ent a

ctiv

atio

nS

iO2

Thic

knes

sO

n a

3800

Å-la

yer o

f SiO

2

Lase

rE

xcim

er, 3

08 n

mP

ulse

Ene

rgie

sU

p to

425

mJ

Flue

nce

Ran

ged

from

300

to 4

00 m

J/cm

2

Pul

se R

ep. R

ate

1 H

z

Pre

ssur

e30

0 m

torr

(pro

cess

ing

cham

ber)

6-in

SO

I Waf

er

Page 13: Nanosecond Thermal Processing for Self-Aligned Silicon-on ...308 nm XeCl Excimer Laser Activation of Dopants During Melt Regime, Removal of Damage Caused by Implantation, and Formation

10

Lase

r Ann

ealin

g an

d D

opan

t Act

ivat

ion:

SIM

S R

esul

ts

Red

istri

butio

n of

dop

ants

, 35

0 m

J/cm

2

Fig.

2 U

ntre

ated

and

Tre

ated

Sam

ples

(350

mJ/

cm2 )

Page 14: Nanosecond Thermal Processing for Self-Aligned Silicon-on ...308 nm XeCl Excimer Laser Activation of Dopants During Melt Regime, Removal of Damage Caused by Implantation, and Formation

11

shal

low

Junc

tions

60 n

m70

nm

350

mj/c

m2

300

mj/c

m2

Fig.

3 T

reat

ed S

ampl

es (3

00 a

nd 3

50 m

J/cm

2 )

Lase

r Ann

ealin

g an

d D

opan

t Act

ivat

ion:

SR

P R

esul

ts

Page 15: Nanosecond Thermal Processing for Self-Aligned Silicon-on ...308 nm XeCl Excimer Laser Activation of Dopants During Melt Regime, Removal of Damage Caused by Implantation, and Formation

12

Fig.

5 R

uthe

rfor

d B

acks

catte

ring

Spec

trom

etry

(RB

S)A

naly

sis

of L

aser

-Tre

ated

Sam

ple

RB

S A

naly

sis

Page 16: Nanosecond Thermal Processing for Self-Aligned Silicon-on ...308 nm XeCl Excimer Laser Activation of Dopants During Melt Regime, Removal of Damage Caused by Implantation, and Formation

13

EFFE

CTS

OF

LASE

R U

V LI

GH

T O

N

MET

AL

LIN

ES

Lase

r exp

erim

ents

wer

e co

nduc

ted

to d

eter

min

e th

e ef

fect

s of

ultr

avio

let

(UV

) lig

ht o

n th

e m

etal

line

s. F

igur

e 6

show

s tw

o Sc

anni

ng E

lect

ron

Mic

rosc

opy

(SE

M) p

ictu

res

of m

etal

sam

ples

afte

r exp

osur

e to

five

pul

ses

(at r

epet

ition

rate

of 1

Hz)

with

flue

nces

of u

p to

500

mJ/

cm2 .

No

dam

age

to m

etal

line

s w

as o

bser

ved.

Fig.

6 L

aser

-Tre

ated

Met

al L

ines

Page 17: Nanosecond Thermal Processing for Self-Aligned Silicon-on ...308 nm XeCl Excimer Laser Activation of Dopants During Melt Regime, Removal of Damage Caused by Implantation, and Formation

14

Uni

ty C

urre

nt G

ain

Freq

uenc

y

fg

t=

++

m

gdC2π

C gsC gb

()

Spee

dD

ecre

ase

C’ s

Incr

ease

f t

Uni

ty P

ower

Gai

n Fr

eque

ncy

[]

f

f

fm

ax=

++

t

tg

gdds

gs

RC

RR

22π

g

RF

Gai

nD

ecre

ase

Rg

Incr

ease

f max

Min

imum

Noi

seM

icro

wav

e N

oise

Dec

reas

e R

gD

ecre

ase

F min

[]

Fk

gR

Rm

sg

min

=+

+1

f f t

FIG

UR

ES O

F M

ERIT

TO

QU

AN

TIFY

TH

E R

F PE

RFO

RM

AN

CE

Page 18: Nanosecond Thermal Processing for Self-Aligned Silicon-on ...308 nm XeCl Excimer Laser Activation of Dopants During Melt Regime, Removal of Damage Caused by Implantation, and Formation

15

Mod

elin

g of

Gat

e R

esis

tanc

e an

d So

urce

Res

ista

nce

Effe

cts

on F

t /Fm

ax

()

()

() ()

()(

)(

) ()()

()

()

()(

)()

()(

)()

poly

met

al

poly

gdg

ts

gds

tm

etal

gdgs

eff

met

alpo

lyt

sqpo

lyga

tesq

met

alga

te

sqsq

sour

ce

sqsh

gate

sqd

unsi

licid

es

sqsi

licid

edpo

lysi

squm

cmsp

acer

ssp

acer

sour

ce

VA

oxn

umfF

oxov

ff

GH

zfF

GH

zS

GH

zf

GH

zfF

GH

zS

GH

zC

RfR

Rg

ff

GH

zfF

fFm

SC

Cgmf

mm

Rm

mR

mmmm

R

RR

Rmcm

R

RR

RS

gds

mS

gmv

VC

Cm

lm

ml

max

,m

ax,

max

,

max

,

/,

,,

,,

,/

4

d)un

silic

ide

or

si

licid

ed(,

5.4

8.83

5.11

2042

2)

1020(

100

23.

42

8.37

95.

1167.0

422

)10

67.0(10

02

3.42

2)

(2

3.42

)5.

1175.

28(2

7.10

2

200.

255

325

3 ,

67.0

0.25

53

251.0

0.25

um),

x

5um

x

finge

rs

(5 M

etal

Gat

e

toPo

lyG

ate

C

ompa

rison

81gm1

10251

200

250.25

200

ca

seW

orst

1.0,

200

,3

,20

010

05.0001

.0 s,

resi

stan

ceSh

eet

100

,12

,1

,12

0,

6.4,

1.0 ,

0.25

/25

w/

Ass

ume,

22

=

=

=+

+≈

=+

=+

Ω=

==

Ω=

≤Ω

=+

=

==

==

Ω=

+=

==

=∆

==

==

ΩΩ

ΩΩ

ΩΩ

ΩΩ

πµ

πµ

πππ

µµ

µµ

µµµµµ

µµ

µµ

µµ

25um

/0.2

5um

QU

AN

TIFI

CA

TIO

N O

F TH

E M

ETA

L G

ATE

PR

OC

ESS

Page 19: Nanosecond Thermal Processing for Self-Aligned Silicon-on ...308 nm XeCl Excimer Laser Activation of Dopants During Melt Regime, Removal of Damage Caused by Implantation, and Formation

16

nMO

S R

ESU

LTS:

IV-C

urve

s

Fig.

7 Id

vs.

Vd

for (

L =

0.25

, W =

70)

nM

OS

Dev

ice

0.00

E+0

0

5.00

E-0

3

1.00

E-0

2

1.50

E-0

2

2.00

E-0

2

2.50

E-0

2

3.00

E-0

2 0.00

0.50

1.00

1.50

2.00

Vd (V

olts

)

Id (Amps)

Id (V

g=0.

00)

(Vg=

0.50

)(V

g=1.

00)

(Vg=

1.50

)(V

g=2.

00)

Page 20: Nanosecond Thermal Processing for Self-Aligned Silicon-on ...308 nm XeCl Excimer Laser Activation of Dopants During Melt Regime, Removal of Damage Caused by Implantation, and Formation

17

nMO

S R

ESU

LTS:

Ftan

d F m

ax

Fig.

8 F

tan

d F m

axfo

r (L

= 0.

25, W

= 7

0) n

MO

S D

evic

e

-10.

00

0.00

10.0

0

20.0

0

30.0

0

40.0

0

50.0

0

60.0

0

1.00

E+07

1.00

E+08

1.00

E+09

1.00

E+10

1.00

E+11

h21

MA

G/M

SG

F t=

23.3

GH

zF m

ax=

50 G

Hz

Page 21: Nanosecond Thermal Processing for Self-Aligned Silicon-on ...308 nm XeCl Excimer Laser Activation of Dopants During Melt Regime, Removal of Damage Caused by Implantation, and Formation

18

nMO

S R

ESU

LTS

Fig.

9 Id

vs.

Vd

for n

MO

S D

evic

e

0.00

E+0

0

5.00

E-0

3

1.00

E-0

2

1.50

E-0

2

2.00

E-0

2

2.50

E-0

2

3.00

E-0

2 0.00

0.50

1.00

1.50

2.00

2.50

Vd

(Vol

ts)

Id (Amps)

Id (V

g=0.

00)

(Vg=

0.50

)(V

g=1.

00)

(Vg=

1.50

)(V

g=2.

00)

Page 22: Nanosecond Thermal Processing for Self-Aligned Silicon-on ...308 nm XeCl Excimer Laser Activation of Dopants During Melt Regime, Removal of Damage Caused by Implantation, and Formation

19

nMO

S R

ESU

LTS:

F tan

d F m

ax

Fig.

10

F tan

d F m

axfo

r (L

= 0.

25, W

= 5

6) n

MO

S D

evic

e

-10.

00

0.00

10.0

0

20.0

0

30.0

0

40.0

0

50.0

0

60.0

0

1.00

E+07

1.00

E+08

1.00

E+09

1.00

E+10

1.00

E+11

h21

MA

G/M

SG

F t=

17.5

GH

zF m

ax=

44.2

GH

z

Page 23: Nanosecond Thermal Processing for Self-Aligned Silicon-on ...308 nm XeCl Excimer Laser Activation of Dopants During Melt Regime, Removal of Damage Caused by Implantation, and Formation

20

1.D

esig

ned

nMO

S SO

I dev

ices

with

alu

min

um g

ate.

2.C

hara

cter

ized

dop

ant p

rofil

e an

d ac

tivat

ion

leve

ls

usin

g Se

cond

ary

Ion

Mas

s Sp

ectr

omet

ry (S

IMS)

and

sp

read

ing

Res

ista

nce

Prof

iling

(SR

P), r

espe

ctiv

ely,

w

hich

dem

onst

rate

d hi

gh le

vels

of d

opan

t act

ivat

ion

usin

g la

ser a

nnea

ling.

3.D

emon

stra

ted

the

crea

tion

of v

ery

shal

low

junc

tions

, in

the

orde

r of 6

0 nm

, usi

ng la

ser a

nnea

ling.

4.C

reat

ed n

MO

S de

vice

s w

ith Id

val

ues

of o

ver 2

5 m

A,

F tva

lues

of o

ver 2

0 G

Hz,

and

Fm

axva

lues

of 5

0 G

Hz.

5.D

emon

stra

ted

feas

ibili

ty o

f SO

I Met

al G

ate

Tech

nolo

gy

us

ing

lase

r ann

ealin

g.

Con

clus

ions

Page 24: Nanosecond Thermal Processing for Self-Aligned Silicon-on ...308 nm XeCl Excimer Laser Activation of Dopants During Melt Regime, Removal of Damage Caused by Implantation, and Formation

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Standard Form 298 (Rev. 8/98)Prescribed by ANSI Std. Z39.18

04–2005 Final

NANOSECOND THERMAL PROCESSING FOR SELF-ALIGNED SILICON- ON-INSULATOR TECHNOLOGY

A. D. Ramirez B. W. Offord J. D. Popp S. D. Russell J. F. Rowland

SSC San Diego San Diego, CA 92152–5001 TD 3195

ONR

Office of Naval Research 800 North Quincy Street Arlington, VA 22217–5660

Approved for public release; distribution is unlimited.

This is a work of the United States Government and therefore is not copyrighted. This work may be copied and disseminated without restriction. Many SSC San Diego public release documents are available in electronic format at http://www.spawar.navy.mil/sti/publications/pubs/index.html

Future radar and communications systems will have the need to use CMOS integrated circuits to provide increased analog and digital functions. Conventional CMOS technology has been locked into designing processes around polysilicon gate material because of the need for self-alignment. Low-resistance metal gates are superior for high-speed devices; however, their low melting point prevented their use in a self-aligned structure that experiences high-temperature processing (>700 oC). Silicon-on-Insulator (SOI) technology, non-refractory metal gates, and nanosecond laser processing were used to fabricate a self-aligned structure. These techniques will allow further scaling of CMOS devices and enable mixed-mode devices to be integrated on the same substrate. The laser is used to rapidly, on the order of nanoseconds, melt and redistribute the implanted dopants for the source and drain with minimal lateral diffusion, which lowers parasitic gate to drain and source overlap capacitance. Gate resistance can be lowered by at least an order of magnitude and optimal threshold control of pMOS and nMOS devices can be achieved by using an aluminum metal gate instead of a polysilicon gate. This process allows high-performance, low-power digital technology to be integrated with high Fmax, low-noise RF devices.

Mission Area: Microelectronics thermal processing excimer laser dopant activation n-channel Metal Oxide Semiconductor silicon-on-insulator laser annealing field-effect transistor

A. D. Ramirez

U U U UU 30 (619) 553–7561

Page 25: Nanosecond Thermal Processing for Self-Aligned Silicon-on ...308 nm XeCl Excimer Laser Activation of Dopants During Melt Regime, Removal of Damage Caused by Implantation, and Formation

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