Nanoscale memory cell based on a nanoelectromechanical switched capacitor

Nanoscale memory cell based ona nanoelectromechanical switched

capacitor

EECS

Min Hee Cho

OutlineI Introduction• Agenda• DRAM & Key idea• Capacitor type• Carbon Nanotube

II Mechanical switched capacitor• Fabrication• SEM image

• Operation• Switching characteristics

J. E. Jang, et al. nature nanotechnology 2008 (Samsung Advanced Institute of Technology & U of Cambridge )J. E. Jang, et al. APPLIED PHYSICS LETTERS 2008

III Low voltage drive•Low Gate Voltage•Fabrication•SEM image

IV Summary•Summary : Merits•Summary : remaining obstacles

V References/ Q&A

OutlineI Introduction• Agenda• DRAM & Key idea• Capacitor structure• Carbon Nanotube





V References/ Q&A

Agenda

Conventional DRAM New DRAM

Fabrication Top-Down process Bottom-Up Process (CNT)

Operation Field Effect Transistor

+ Capacitor

Electromechanical switch

+ Capacitor

Nanoscale memory cell = DRAM with Carbon nanotube

DRAM & Key ideaSchematic drawing of original designs of DRAM

patented in 1968.

* Development of DRAM : Cell size is smaller and smaller TR : On/Off ratio ↓(due to Short channel effect) Cap : Area of capacitor is also reduced ( Capacitor should be larger to improve performance)

* Solution TR : Mechanical switched TR Cap: Vertical structure ( increase area of capacitor ) or High K

Gate

Drain Source

Capacitor

Trench type

Capacitor structure

Cylinder type like “HAT”

Dielectric:small area

Gate

Drain Source

Capacitor

Source Drain

Gate

DRAM has several limits as shrinkage* Transistor - low Subthreshold swing (low On/Off ratio) - short channel effect (Off leakage)

New challenge for DRAM with CNT* Transistor - Use Electromechanical property not Field effect On/Off ratio ↑ - Smaller cell area : due to the vertical structure* Additionally, they can use existing silicon technology

Area also reduced

Conventional DRAM structure

New DRAM structureNew DRAM structure

Carbon Nanotube (CNT)

Properties

SingleWalledCarbonNanotube(SWNT)

Multi-Walled Carbon Nanotube

(MWNT)

Comparison

Diameter (nm) 1.2~3 5~100Hair(70~100)×103

Tension (GPa) ~45 <50~300Stainless steel :

0.65~1)

Density(g/cc) 1.33~1.40 - Al ~2.7

Electric resistance(Ω·m)

10×10-6 5.1×10-8 Cu 1.7×10-8

Current density(A/m2)

~109 - Cu 106

Thermal conductivity(W/m·K)

~6000 ~3000Diamond : 2000~40000,Cu: 393.7

CNT formation

They use CNT as electromechanical materials rather than semiconductor material






V References/ Q&A

Fabrication 0. Make Nb catalyst dot on Substrate

I. C2H2 &NH3 gas 600~650oC by PECVD : CNT

II. Si3N4 (dielectric & insulator) by PECVD

III. Cr by sputtering : upper electrode

IV. Si3N4 at Drain removed by wet etching Si3N4 remaining at bottom of MWCNT strengthen the interface enhance working reliability

CNT formation

SEM image

* Total cell: 40,000 ea* MWCNT success rate : 95%* Final cell success rate : 50% (failure due to mainly M/A in litho)

CNT diameter : 70nmGap between CNT : 100nmLength : 3.5umSi3N4 thickness : 40nmFor single capacitance: 1.05fF

SEM images






V References/ Q&A

Write

Operation

The mutual repulsion between the positive charges on the capacitor and the nanotube in cell 1 prevents the nanotube from making contact with the capacitor, so no current flows, unlike the situation in cell 2, where the nanotube does make contactwith the cell.

Read

BL of Cell 1 and apply 0.1V gate voltage to the 15V CNT of Cell 1 begins to bend contacts charges flow from CNT(BL) to capacitor

Potential distribution

* When gate voltage is higher than Vt, Transistor turns on * Vd increase Vt decreases due to electrostatic force

Threshold gate voltage (Vt)

OFF

ON

Very High gate voltage: Usually DRAM operates at ~1.3V (or less than 2.5V)

Switching characteristics






V References/ Q&A

J. E. Jang, et al. APPLIED PHYSICS LETTERS 2008

Low Gate Voltage

Too high operating voltage (15~20V)

APPLIED PHYSICS LETTERS 93, 113105 2008

∵ The simple planar gate structure imparts a very small electrostatic force to the drain electrostatic force ∝ 1/d2

Need high voltage

Vertical gate structure

In this workThey make vertical gateand tie it with drain

14~15V 4~5 V4~5 V

PolyMethyl MethAcrylate (PMMA) : thermoplastic and transparent plastic.

PMMA coating after the CNT growth process. 30 nm SiNx deposition by PECVD

E-beam lithography with substrate tilting

Cr layer deposition

lift-off process (Cr on PMMA removed)

400 nm PMMA coating and ashing process to remove the Thin PMMA on the vertical CNT and gate structure

Fabrication

1> Operating Gate voltage can be reduced 2> Area also reduced

SEM images

OutlineI Introduction• Agenda• DRAM Memory• Basic Operation• Capacitor type• Carbon Nanotube





V References/ Q&A

Summary : Merits

• Excellent ‘ON–OFF’ ratio – Due to the mechanical switching approach

No ultra-shallow n- or p-type junctions No thin-gate dielectrics

• Compatible with existing silicon technology

• Vertical orientation Cell area ↓

• Placing defined numbers of nanotubes at selected locations

Summary : Remaining Obstacles

• High voltage Vertical gate (14V 4V : still high)

• The growth temperature used in this work : 600–650 oC is relatively high for integration with CMOS tec

hnology

• Still larger (~200nm ) : Need demonstration at smaller size is needed

• Randomization of nanotube orientation by thermal fluctuations and gas flows

References• “ Nanoscale memory cell based on a nanoelectromechanical switc

hed capacitor”, J. E. Jang, et al. (Samsung Advanced Institute of Technology & U of Cambridge) Nature 26 Nanotechnology | VOL 3 | JANUARY 2008

• “Nanoelectromechanical switch with low voltage drive” J. E. Jang, et al. APPLIED PHYSICS LETTERS 93, 113105 2008

• Internet search – DRAM / CNT etc.

Thank you very much

See you again!

Q&A

Nanoscale memory cell based on a nanoelectromechanical switched capacitor

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