Fracture-based micro- and nanofabrication for biological ...
Nanofabrication and Devices (in ECE and ME Departments)
description
Transcript of Nanofabrication and Devices (in ECE and ME Departments)
Nanofabrication and Devices (in ECE and ME Departments)
John Melngailis
Department of Electrical and Computer Engineering
&
Institute for Research in Engineering and Applied Physics.
University of Maryland, College Park
Nanofabrication
- electron beam lithography, (SEM with beam writing software, 20nm min. features) C.H. Yang
- focused ion beam, milling, induced deposition, etching, and implantation, 5-10 nm minimum beam
diameter, ~30nm features milled. K. Edinger, A. Stanishevsky, J. Orloff and J. Melngailis
- deep reactive ion beam etching, D. DeVoe
- aligner/bonder, R. Ghodssi
- new Engineering & Applied Sciences Bldg. (6000 sq. ft. class 1000, clean room), ready May,04
Engineering and Applied Sciences Building
Clean room
floor plan
6000sq. ft. Class 1000Space
Cross section view of clean room and subfab
FIB facilities
Nanofab 150 kV FIB system with alloy ion sources used for implantation of semiconductor devices
FEI-620 30 kV Dual-Beam SEM/FIB with Ga+ ion sourceMicrion FIB-2500 system with 50 kV Ga+
source and 5nm minimum beam diameter
FIB patterning of diamond films
Patterned CVD diamond microcrystal
A. Stanishevsky, Univ. of Maryland
Trenches focused-ion-beam milled in a diamond film.
30nm wide, 600nm deep
Focused Ion Beam Milled Cross Section of Part of an Integrated Circuit
Ion Beam Shaving Focused Ion Beam Milling
SNOM probeElectrochemical
probeScanning Gas-Nozzle “Nano-jet”
Electron Beam Induced Deposition Focused Ion Beam Implantation
Scanning Thermal Probe
AFM / MFM Probe Scanning Electric Field Probe
FIB/SEM fabricated Nano-Probes
Klaus EdingerLIBRA
Nanodevices-Electronic & optical
• quantum (C. H. Yang, et. al.) • modeling: nanoMOSFET’s, carbon nanotubes
(N. Goldsman & G. Pennington)• magnetic storage (R. Gomez, et al.)• FIB implanted JFET (A. DeMarco & J. Melngailis)• single photon tunneling (I. Smolyaninov & C. Davis)
C.H. Yanga, M.J. Yangb, Andy Chenga, Philip Changa, and J.C. Culbertsonb
Nanoelectronics Research
aDepartment of Electrical and Computer Engineering,University of Maryland, College Park, MarylandbNaval Research Laboratory, Washington DC
le
WL
l
Fabricated 30 nm conducting InAs wires by (I) MBE growth of heterojunctions, (II) electron beam lithography and (III) wet etching
Observed: 1D pure metal regime:
WW < le < l Ballistic regime:
LL < le < l
C.H. Yanga, M.J. Yangb, Andy Chenga, Philip Changa, and J.C. Culbertsonb
Nanoelectronics Research
aDepartment of Electrical and Computer Engineering,University of Maryland, College Park, MarylandbNaval Research Laboratory, Washington DC
Fabricated 100 nm diameter conducting InAs ring, and observed quantum interference due to wave-like electron transport.Left: AFM topographyBelow: Magnetoresistance
Numerical Boltzmann/Schrodinger Equations: CAD of Quantum Effects in Nanoscale Semiconductors
Neil Goldsman, ECE Dept. UMCP
Band Diagram Flow Chart
Quantum Domain Dispersion Relation of QM Well
..
Numerical Boltzmann/Schrodinger Equations: CAD of Quantum Effects in Nanoscale Semiconductors
Neil Goldsman, ECE Dept. UMCP Numerical
I-V Charactistics
Current Vector(SHBTE) Current Vector(QM-SHBTE)
..
Subthreshold Characteristics
Design and Theory of Carbon Nanotube Diodesby Gary Pennington and Neil Goldsman ECE Department University of Maryland
-V
•Results: Using the tube diameter dependence of the effective mass, band offset, dielectric constant, and hole concentration for an array of Y-junction multiwalled carbon nanotubes, we determined an theoretical analytical formula the junction current as a function of constituent tube diameters.
Array of Y-junction carbon nanotubes
Experiment: C. Papadopoulos et al., Phys. Rev. Lett 85, 3476 (2000).
R.D. Gomez, et al., Laboratory for Physical Sciences, College Park MD R.D. Gomez, et al., Laboratory for Physical Sciences, College Park MD and University of Maryland, College Park, MDand University of Maryland, College Park, MD
Mechanism: s-d exchange interaction
Demonstration of current-induced domain wall motion for novel magnetic device applications
L. Gan, S.H. Chung, K. Aschenbach, M.Dreyer and R.D. Gomez, IEEE Transactions on Magnetics 36, 3047, 2000.
Ballistic Nanocontact Magnetic Random Access Memory R.D. Gomez, Department of Electrical and Computer Engineering
Topography of interacting NiFe island arrays
Demonstration of Fabrication and Characterization of Single Domain Magnet
Arrays
H. Koo and R.D. Gomez, IEEE Transactions on Magnetics 37.
Ballistic Nanocontact Magnetic Random Access Memory R.D. Gomez, Department of Electrical and Computer Engineering
Schematic view of our experimental setup.
fiber
to PMT
prism
3BCMUgold film
pinhole
632 nm light
Single-Photon Tunneling
I.I. Smolyaninov, C.Davis et.al. ECE Dept.
Small smart systems &MEMS
• Don Devoe- mechanical resonators…• Reza Ghodssi- III-V MEMS, MEMS_VLSI integration• Elisabeth Smela- polymer mEMS
High-Q Piezoelectric Nanomechanical Filter Arrays
• Functional filter banks based on nano-scale piezoelectric NEMS structures:
– orders-of-magnitude size reduction compared to SAW devices– direct integration with VLSI (ZnO) and high-speed electronics (AlAs)– low power operation• Applications in miniature RF communications, spectrum analyzers, etc.
1
10
102
103
104
105
10-10 10-8 10-6 10-4 10-2 1
Volume (cm3)
Q
NEMS.Thin Film
Thin Crystal
Dielectric
PlanarDielectricLumped
Element
HTS
10+2
piezo
Piezoelectric resonator scaling
L=200nm
gap=20nmgap=L/10
Piezo (AlAs, ZnO)
Capacitive (poly-Si)
f=3GHz
L=30nm
beam length
f=60MHz
~ 34 m Deep Trench in Si SiO2
Bottom PtTop Pt
PZT
Input Signal
~ 34 m Deep Trench in Si SiO2
Bottom PtTop Pt
PZT
Input Signal Output Signal
Mechanical & thermal devices
• Hugh Bruck - funcionally graded materials• Klaus Edinger - scanning thermal nanoprobe
Functionally Graded Smart Thin Film
Mf >Troom
Ms <Troom
5 mm*>150.0°C
*<123.7°C
125.0
130.0
135.0
140.0
145.0
150.0 1 mm
Out-of-plane Displacement
Infrared Temperature Field
Nano Indenter XP
= 100 MPa
r
z
T
t
400 oC
Ms = 43 oC, Mf = 23 oC
Ms = 3 oC, Mf = -17 oC
U-DISPLACEMENT
100 nm 100 nmV-DISPLACEMENT
150 nm 150 nm
Before Actuation
After Actuation
Digital Image Correlation
Film-substrate interface
ATC 1200 SPUTTERING MACHINE “Micropump”
Functionally Graded Smart
Thin Film
“Microbubble”
Atomic Force Microscopy
Fabrication of Functionally Graded Thin Films
Nanoscale Structure and Deformation Characterization
Nanoscale Material Property and Stress Characterization
Microdevice Performance Characterization
Microscale Modeling of Device Performance
Force Modulation Microscopy
Dimension3000 SPM
1 m
T = 44 oCFinite Element
Analysis
Hugh BruckME Dept
Scanning Thermal ProbeKlaus Edinger
Me3 MeCp Pt precursor deposits a Pt/carbon mixture
Filament diameter ~ 30 nmTip end radius < 20 nm
Height: 2-5 m
LIBRA
Nanofabricated Scanning Thermal Probe Klaus Edinger, LIBRA
Topographic image (left): Only the metal leads are visible. The two buried resistors are indicated by the dotted line. Temperature image (right): The two buried resistors (heating current ~2mA) are visible.
• Free-standing 20-50 nm Pt “wire” grown by electron beam induced deposition from an organometallic precursor gas on an AFM type cantilever. • Low thermal mass; high sensitivity; high spatial resolution
•Passive mode: the resistance of the wire in contact with the sample is measured, using a low current temperature mapping
•Active mode: the wire is heated by applied an AC-current mapping of thermal conductivity and diffusivity.
LIBRA
Summary
• nanofabrication capabilities (e-beam/SEM, focused ion beam, MEMS, new EAS Building with clean room)
• nanodevices: electrical & optical
• nanoMEMS
• mechanical and thermal devices