Nanocure 3 Ultraviolet Light Curing System · 2011-07-12 · Novel UV assisted Ozone clean...
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External Use SILICON SYSTEMS GROUP External Use SILICON SYSTEMS GROUP Nanocure ™ 3 Ultraviolet Light Curing System Silicon Systems Group July 12 th , 2011
Transcript of Nanocure 3 Ultraviolet Light Curing System · 2011-07-12 · Novel UV assisted Ozone clean...
External Use
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SILICON SYSTEMS GROUP External Use SILICON SYSTEMS GROUP
Nanocure™ 3 Ultraviolet Light
Curing System
Silicon Systems Group
July 12th, 2011
External Use
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SILICON SYSTEMS GROUP External Use
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SILICON SYSTEMS GROUP SILICON SYSTEMS GROUP
These presentations contain forward-looking statements, including those regarding
market outlooks; technology roadmaps; the proposed Varian merger; and Applied’s
market positions, products, growth opportunities, strategies and business outlooks.
These statements are subject to known and unknown risks and uncertainties that could
cause actual results to differ materially from those expressed or implied by such
statements, including but not limited to: the level of demand for Applied’s products, which
is subject to many factors, such as uncertain global economic and industry conditions,
demand for electronic products and semiconductors, government renewable energy
policies and incentives, and customers’ new technology and capacity requirements; the
satisfaction of conditions precedent to the proposed merger with Varian, including the
ability to secure regulatory approvals in a timely manner or at all; Applied’s ability to (i)
develop, deliver and support a broad range of products and expand its markets, (ii) align
its cost structure with business conditions, (iii) successfully execute its acquisition
strategy and realize synergies, (iv) obtain and protect intellectual property rights, and (v)
attract, motivate and retain key employees; and other risks described in Applied’s SEC
filings. All forward-looking statements are based on management’s estimates, projections
and assumptions as of July 12, 2011, and Applied undertakes no obligation to update any
forward-looking statements.
Safe Harbor
External Use
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SILICON SYSTEMS GROUP
Reflexion GT™ for Tungsten
New Products Released At 2011 Semicon West
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Vantage® Vulcan™ RTP
Centura® DPN HD
Endura® Versa™ XLR W PVD
Endura® HAR Cobalt PVD
Centura® Integrated Gate Stack
Producer® Black Diamond™ 3
Producer® Nanocure™ 3
TRANSISTOR-ENABLING PRODUCTS
INTERCONNECT-ENABLING PRODUCTS
External Use
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SILICON SYSTEMS GROUP
Nanoscale Engineering With UV Light
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Ultraviolet (UV) light energy treatment introduces porosity and
strengthens bond structures inside the film
Black Diamond 3
Nanocure 3
External Use
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SILICON SYSTEMS GROUP External Use
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SILICON SYSTEMS GROUP SILICON SYSTEMS GROUP 5
Deliver lower k value of film for lower
power consumption
Maximize mechanical strength of the
film for higher packaging yield
Provide uniform film curing to lower
variability in device performance
Multilevel low-k layers formed with Nanocure system
Unlock Full Potential Of Porous Low-k Films
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SILICON SYSTEMS GROUP
Advancing UV Curing To 2X nm Node
Uniform Revolutionary optics delivers uniform cure
Robust Optimized UV intensity wafer to wafer
Clean Unique ozone process for low defectivity
Fast 40% faster cure times than competition
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Nanocure 3 System
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SILICON SYSTEMS GROUP External Use
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SILICON SYSTEMS GROUP SILICON SYSTEMS GROUP
Parameter Conventional UV Cure Nanocure 3
Shrinkage Uniformity Map
Shrinkage Uniformity (%,1s)
Shrinkage Range (%) (Max-Min)
E&H Uniformity (GPa) (Max-Min)
3.0
1.8
0.8 / 0.1
1.6
1.0
0.3 / 0.04
New Chamber Provides Uniform Cure
50% more uniform UV cure Tighter modulus and hardness metrics
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SILICON SYSTEMS GROUP External Use
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SILICON SYSTEMS GROUP SILICON SYSTEMS GROUP
Ozone Technology Offers Clean Cure
Novel UV assisted Ozone clean technology
Leading edge solution for lower defects at small device nodes
Number of wafers
Part
icle
ad
ders
Particle data collected over an extended run
0 200 400 600 800 1000
20
40
60
80
Average = 3 adders
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SILICON SYSTEMS GROUP 9
Process Innovations Enable Fast Cure
Up To 40% faster curing times over conventional cure approach
Market leading cure speed
1 Step Cure
S1.0
S1.3
S0.7
1-Step Cure (Nanocure 3)
2-Step Cure
S0.3
t1.0 t1.4
Norm
. F
ilm S
hri
nkag
e (
%)
Normalized Cure Time
S1.1
t1.4
S0.8
S1.0
t1.0
Low Pressure Cure
Norm
. F
ilm S
hri
nkag
e (
%)
Normalized Cure Time
Low Pressure (Nanocure 3)
High Pressure
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Revolutionary optics provides
uniform light distribution on wafer
Innovative chamber design offers
uniform gas flow
Leading on-wafer uniformity
Metal Contour
polishing head
Novel UV-assisted Ozone clean
Most Efficient clean with low defects
Radical UV cleaning solution
Uniformity Defectivity
Technology Leadership in Nanocure
Temperature
Light
Gas Flow
Closed loop monitoring and power
adjustment for consistent curing
Low variability wafer to wafer
Only provider of real time control
Dynamic Control
Reference
Measured
error
System
input
System
output
Measured
output
Controller System
Sensor
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SILICON SYSTEMS GROUP
Nanocure 3 UV Curing Expanding Applied Leadership in Low k Dielectrics
Advanced UV curing technology unlocks
full potential of porous low-k films
Delivers lower k value and maximizes
mechanical strength
Uniform and robust process offers lower
variability in device performance
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External Use
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SILICON SYSTEMS GROUP
