Murty, Johnson, Harame
Transcript of Murty, Johnson, Harame
Murty, Johnson, Harame BCTM 2001
RF BiCMOS Device Modeling
Extraction of HiCUM Model Parameters for SiGe Bipolar Transistors
M. Ramana Murty, J.Johnson and D. Harame9/27/01
Murty, Johnson, Harame BCTM 2001
RF BiCMOS Device Modeling
Outline
• Extraction of Resistances• Base Resistances: CBEB Test Structure• Emitter Resistance: Open-Collector Method• Collector resistance: Test-Structure
• Extraction of Junction Capacitances• Cold S-Parameters (CBEBC Transistors)+ Test-Structures
• Extraction of Avalanche Parameters• Ib vs Vbc Characteristics (CBEBC Transistors)
• Extraction of Current Parameters• Gummel and Transfer Current Characteristics (CBEBC Transistors)
• Extraction of Transit Time parameters• Active S-Parameters (CBEBC Transistors)
Murty, Johnson, Harame BCTM 2001
RF BiCMOS Device Modeling
Base-link Resistance be0/∆l
R (O )
Extrinsic Base Resistance
Test-Structure to Measure Base Resistances
• CBEB Configuration• l = 4.5 and 10 um• b = 0 to 0.8 (5-sizes)
B1
B2
C
E
Murty, Johnson, Harame BCTM 2001
RF BiCMOS Device Modeling
Base Pinch Resistance and Zero Bias Hole Charge
rsBi (O/Sq )
Vbe(V)
chargesjunction internal theare Q and Q
and 0
here
, 0
11
jcijEi
∫=+==
=−
bejjcijEi dVCQQQjrsBirsBir
pQjQ
r
(1/r-1)
Qj
Vce= 0 and 0.5 V
Murty, Johnson, Harame BCTM 2001
RF BiCMOS Device Modeling
Emitter Resistance: Open Collector method
Set Ic=0, Vary Vbe, Measure Vce, Ib. Plot Vce vs Ie and fit to:
baseinternal under the collector in mobilities
,1
2
1ln
=
+=
++=
µµµµ
µ
pc
nc
T
os
EEECE
Vf
IIfIrV VCE (V)
IE (A)
1/AE0
rE(Ω) Slope=ρKE
Offset ?
Murty, Johnson, Harame BCTM 2001
RF BiCMOS Device Modeling
Junction Capacitances – Cold S-parameter Method
Cold => Vbe= -0.5 to +0.5 V, Vbc=0 and Vbe=0, Vce= -0.5 to +3.5 V
+=
+
−=
−=
+=
22121
22121.2
12
)12(2
)12()11(
YYrealRsub
YYimagf
Ccs
fYimagCbc
fYimagYimagCbe
π
π
πB
E
C
Sub
Cbc
Cbe
Ccs
Rsub
Eq.ckt under Cold operation
Murty, Johnson, Harame BCTM 2001
RF BiCMOS Device Modeling
Cold S-par Cbcmeas.
Cbc=Cbcmeas-Ccox
Polyfit Cbc vs. size
Intercept= area partOf (Cbci+Cextbase)
Slope =peri part of Cjcb
Subtract Cex
Fit to C-V equ,=>c’jcb,m,vbi
Fit to C-V equ,=>cjci,m,vbi
Cextbase fromCapmons(CAC2XB)Cjcb,m,vbi
Ccox (=oxideoverSTI) :Capmons(CAC2XBMS)
Extraction Flow of the Components of Cbc
Murty, Johnson, Harame BCTM 2001
RF BiCMOS Device Modeling
• CBEBC Structures: b=0.16, 0.32, 0.48, 0.64, 0.96 and l=8.4 um• Corrected for (a) Emitter Spacer, (b) extrinsic base and (c) oxide capacitance.• Fit to classical C-V relationship
CperiVs VoltageCarea Vs Voltage
Separation of Cbc into its Components
Murty, Johnson, Harame BCTM 2001
RF BiCMOS Device Modeling
Base-Collector Weak Avalanche Model
2/ and 2 , )()0( where
)(exp)(
''''
''''
EnAVLn
nAVLCBbCBbAVL
CBDCijCi
AVLCBDCiAVLTAVL
AbqbafVIVII
VVCqVVfII
ε==−==
−−−=
I b(nA
)
I avl(n
A)
Vbc (V) -Vbc (V)
• Ib and Ic measured at a low Vbe where self-heating effects are negligible
5 device sizes
Murty, Johnson, Harame BCTM 2001
RF BiCMOS Device Modeling
Separation of Ibe into Area and Perimeter Components
• Ibe has no perimeter component as implied by the Ibe/A Vs P/A plot
I beA (A
)
Murty, Johnson, Harame BCTM 2001
RF BiCMOS Device Modeling
Separation of Ic into Area and Perimeter Components
Murty, Johnson, Harame BCTM 2001
RF BiCMOS Device Modeling
Is=9.12e-19Qp0= 3.18e-14mcF=1.035
T
BE
BEjEip
psc V
VVQQ
QII +
++=
)(log)log()log(
0
0
Bias Dependent Early Effect
Ic(a
rea)
(Am
p)
Vbe (V)
Murty, Johnson, Harame BCTM 2001
RF BiCMOS Device Modeling
Transit Time- Low Ic Region
( ) cppfciifEEfEf
CBjci
jciBfvlhf
bcB
ECxfT
IIbIcbbQVC
Cc
cc
gmCCrrr
f
..)(.)(
)( ,11)1(
.2
1
0000000
''
0000
0
τττ
ττττ
βτ
π
+==
=
−+−∆+=
Σ+
+++=
Qf0(area)= 5.7x10-17 Cτf0i/τf0p= 1.857
1/2π
f T (p
s)
16
10
21x103 4x103 7x103
1/Ic(low) (A-1)
Murty, Johnson, Harame BCTM 2001
RF BiCMOS Device Modeling
1 ; 11
; .
.21.2
22
c
ck
hc
hc
hcc
ckhCs i
Iiaaii
waii
Iwfh −=++++
=
++=∆ ττ
Transit Time- High Ic Region and Critical Current Parameters
0.48x8.4 µm
Ick referred ∆τf
Murty, Johnson, Harame BCTM 2001
RF BiCMOS Device Modeling
PTceff
ceff
ceffck VVvxxx
Vvrci
vI ).( ;
2101
lim1
10
lim
32
2−=
+++
+
=−
Ick vs VC’E’ for w = 0.16, 0.32, 0.48, 0.64, 0.96 um
Transit Time-Determination of the Ick Parameters
Murty, Johnson, Harame BCTM 2001
RF BiCMOS Device Modeling
Conclusions
• Several of the HiCUM Model Parameters are Extracted and their Physical Meaningfulness Verified.
• Extraction of High-current parameters, Non-quasi-static effect parameters etc. is underway
3.
Murty, Johnson, Harame BCTM 2001
RF BiCMOS Device Modeling
A Screen-shot of the Structure Data Required in Tradica
SEM+SIMS
Murty, Johnson, Harame BCTM 2001
RF BiCMOS Device Modeling
A Screen-shot of the Model Parameter Data(1) Required in Tradica
Murty, Johnson, Harame BCTM 2001
RF BiCMOS Device Modeling
A Screen-shot of the Model Parameter Data(2) Required in Tradica
Murty, Johnson, Harame BCTM 2001
RF BiCMOS Device Modeling
Murty, Johnson, Harame BCTM 2001
RF BiCMOS Device Modeling