Multi-beam mask writer MBM-1000 · PLDC MBM-1000 has pixel level dose correction (PLDC)...
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Multi-beam mask writer MBM-1000 for advanced mask making H. Matsumoto NuFlare Technology, Inc. 2018/2/27 Feb. 27, 2017 Slide 1
Transcript of Multi-beam mask writer MBM-1000 · PLDC MBM-1000 has pixel level dose correction (PLDC)...
Multi-beam mask writer MBM-1000
for advanced mask making
H. Matsumoto
NuFlare Technology, Inc.
2018/2/27 Feb. 27, 2017 Slide 1
VSB Multi-beam
Shaping aperture array
(SAA) Blanking aperture array
(BAA)
Sub deflectors Main deflectors
Objective lens
Projection lens
Condenser lens
Electron gun
Condenser lenses 1st shaping aperture
Shaping deflectors
2nd shaping aperture
Electron gun
Sub deflectors
Main deflectors
Projector lenses
Objective lens
Reticle
2018/2/27 Feb. 27, 2017 Slide 2
MBM-1000 EBM-9500
current density (A/cm2) 2 1200
max. total current (nA) 500 700
CD (nm[3s]) 1.0 1.3
registration (nm[3s]) 1.8 2.5
Shot count (G/pass) 0.9# (pattern independent) 100-500 (pattern dependent)
# number of exposure by 512512 beams for 150mm area
stripe width
=beam array size
stripe width
=deflection field size
Correction functions (EBM series)
NFT uses consistent theory for PEC/FEC/LEC.
Offline correction can be handled by VSB12i EL function.
10-3 10-2 10-1 100 101 102 103 104
interaction range [um]
dose
Dth primary dose proximity dose fogging dose
primary dose proximity effect fogging effect
with PEC with PEC and FEC
thFP DdgDdgDD xxxxxxxxx 2/
50% dose level
adjusted by PEC
and FEC FEC
PEC LEC/FEC
EBM
offline correction (VSB12i EL)
No secondary dose
2018/2/27 Feb. 27, 2017 Slide 3
PLDC
MBM-1000 has pixel level dose correction
(PLDC)
Middle-range effect correction for EUV-PEC
Short-range effect correction for linearity correction,
fidelity improvement and better dose margin
2018/2/27 Feb. 27, 2017 Slide 4
Corrections run inline.
No need for pre-writing calculation.
Correction functions (EBM/MBM)
MBM does middle-range and short-range correction
inline and real-time by using PLDC.
Corrections by PLDC is consistent with PEC/LEC/FEC
10-3 10-2 10-1 100 101 102 103 104
interaction range [um]
PEC LEC/FEC
EBM
offline correction (VSB12i EL)
beam-by-beam
correction
MBM EUV-PEC
EUV-PEC
consistently
integrated fidelity
2018/2/27 Feb. 27, 2017 Slide 5
PLDC
Data path in MBM-1000
Blanking aperture array (BAA)
Sub deflectors Main deflectors
rasterize
pixel level
dose modulation
vector level processing
shot data generation
deflection data
shot time data
linearity correction
dose margin enhancement
EUV-PEC
PEC/FEC/LEC/GMC
are applied.
PLDC integrated with
rasterizer
beam-by-beam
correction tool-specific
correction
2018/2/27 Feb. 27, 2017 Slide 6
Resolution enhancement by PLDC
PLDC improves dose profile by pixel-based dose
correction.
Dose contrast at pattern edge is enhanced to widen process
margin.
Dose profile can be adjusted to correct patterning linearity.
2018/2/27 Feb. 27, 2017 Slide 7
Zable et al.
Proc. of SPIE Vol. 10454 104540D-1 (2017)
0 100 2000
1
2
3
position [nm]
dose
[a.u
.]
shot + PE dose deposited dose
0 100 2000
1
2
3
position [nm]
do
se [
a.u
.]
shot dose deposited dose
Linearity
Dose blurring limits patterning resolution at fine pitch.
under dose
just dose, but
poor contrast
2018/2/27 Feb. 27, 2017 Slide 8
10-nm beam, 5-nm grid,
20-nm Gaussian
40 nm isolated line 40-nm hp dense line
PLDC enhances dose margin
2018/2/27 Feb. 27, 2017 Slide 9
0
0.2
0.4
0.6
0.8
1
0 20 40 60 80 100
do
se m
argi
n [
nm
/%d
ose
]
pattern hp [nm]
w/o PLDC
w/ PLDC (100%)
w/ PLDC (140%)
w/ PLDC (200%)
0
0.2
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0.8
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0 20 40 60 80 100
do
se m
argi
n [
nm
/%d
ose
]
pattern hp [nm]
w/o PLDC
w/ PLDC (100%)
w/ PLDC (140%)
w/ PLDC (200%)0
0.2
0.4
0.6
0.8
1
0 20 40 60 80 100
do
se m
argi
n [
nm
/%d
ose
]
pattern hp [nm]
w/o PLDC
w/ PLDC (100%)
w/ PLDC (140%)
w/ PLDC (200%)
0
0.2
0.4
0.6
0.8
1
0 20 40 60 80 100
do
se m
argi
n [
nm
/%d
ose
]
pattern hp [nm]
w/o PLDC
w/ PLDC (100%)
w/ PLDC (140%)
w/ PLDC (200%)0
0.2
0.4
0.6
0.8
1
0 20 40 60 80 100
do
se m
argi
n [
nm
/%d
ose
]
pattern hp [nm]
w/o PLDC
w/ PLDC (100%)
w/ PLDC (140%)
w/ PLDC (200%)
0
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0 20 40 60 80 100
do
se m
argi
n [
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/%d
ose
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pattern hp [nm]
w/o PLDC
w/ PLDC (100%)
w/ PLDC (140%)
w/ PLDC (200%)0
0.2
0.4
0.6
0.8
1
0 20 40 60 80 100
do
se m
argi
n [
nm
/%d
ose
]
pattern hp [nm]
w/o PLDC
w/ PLDC (100%)
w/ PLDC (140%)
w/ PLDC (200%)
0
0.2
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1
0 20 40 60 80 100
do
se m
argi
n [
nm
/%d
ose
]
pattern hp [nm]
w/o PLDC
w/ PLDC (100%)
w/ PLDC (140%)
w/ PLDC (200%)
5% dense Line/Space 50% dense Line/Space
hp 20nm not
resolved at 50% LPD poor resolution w/o
dose bias
10-nm beam, 5-nm grid,
20-nm Gaussian
Edge-enhanced PLDC effectively
improves dose margin Low density features print well
PLDC improves patterning resolution.
Larger dose modulation leads to more improvement, but requires
longer write time.
PLDC is effective with 140% modulation which can be good option to
balance improvement and TPT.
pattern size [nm] pattern size [nm]
PLDC corrects for linearity
EPE linearity is corrected.
PLDC corrects for linearity, with increasing dose margin.
Correction accuracy is ok even with 100% dose modulation.
2018/2/27 Feb. 27, 2017 Slide 10
-4
-3
-2
-1
0
1
2
3
4
0 20 40 60 80 100
EPE
[nm
]
pattern hp [nm]
w/o PLDC
w/ PLDC (100%)
w/ PLDC (140%)
w/ PLDC (200%)-4
-3
-2
-1
0
1
2
3
4
0 20 40 60 80 100
EPE
[nm
]
pattern hp [nm]
w/o PLDC
w/ PLDC (100%)
w/ PLDC (140%)
w/ PLDC (200%)-4
-3
-2
-1
0
1
2
3
4
0 20 40 60 80 100
EPE
[nm
]
pattern hp [nm]
w/o PLDC
w/ PLDC (100%)
w/ PLDC (140%)
w/ PLDC (200%)-4
-3
-2
-1
0
1
2
3
4
0 20 40 60 80 100
EPE
[nm
]
pattern hp [nm]
w/o PLDC
w/ PLDC (100%)
w/ PLDC (140%)
w/ PLDC (200%)-4
-3
-2
-1
0
1
2
3
4
0 20 40 60 80 100
EPE
[nm
]
pattern hp [nm]
w/o PLDC
w/ PLDC (100%)
w/ PLDC (140%)
w/ PLDC (200%)-4
-3
-2
-1
0
1
2
3
4
0 20 40 60 80 100
EPE
[nm
]
pattern hp [nm]
w/o PLDC
w/ PLDC (100%)
w/ PLDC (140%)
w/ PLDC (200%)-4
-3
-2
-1
0
1
2
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4
0 20 40 60 80 100
EPE
[nm
]
pattern hp [nm]
w/o PLDC
w/ PLDC (100%)
w/ PLDC (140%)
w/ PLDC (200%)-4
-3
-2
-1
0
1
2
3
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0 20 40 60 80 100
EPE
[nm
]
pattern hp [nm]
w/o PLDC
w/ PLDC (100%)
w/ PLDC (140%)
w/ PLDC (200%)cliff ~25nm
w/o PLDC
5% dense Line/Space 50% dense Line/Space
EPE error at hp 20nm is insignificant
as pattern will not be resolved.
PLDC corrects to
20-nm hp PLDC corrects to 30-nm hp;
20-nm hp has very poor dose margin
10-nm beam, 5-nm grid,
20-nm Gaussian
pattern size [nm] pattern size [nm]
PLDC for curvilinear pattern
PLDC enables ILT patterning without turnaround time
penalty
Simulation without PLDC Simulation with PLDC for edge enhancement
H. Zable et al., " GPU-accelerated inline linearity correction: pixel-level dose
correction (PLDC) for the MBM-1000" , Proc. SPIE 10454, 104540D-1, (2017).
2018/2/27 Feb. 27, 2017 Slide 11
[test pattern from D2S.inc.]
PLDC for curvilinear pattern
Pattern fidelity is improved by PLDC
PLDC off PLDC on comparison
low sensitivity resist (~140 uC/cm2)
4X size of 80
nm contact
PLDC off
PLDC on
2018/2/27 Feb. 27, 2017 Slide 12
Conclusion
PLDC corrects linearity with increasing dose margin.
Effective with 140% dose modulation
Corrects to 20-nm hp (5% density) and 30-nm hp (50% density)
with 20 nm total blur.
PLDC provides EUV-PEC, which is middle-range PEC for
EUV substrate.
PLDC is integrated consistently with correction function
of PEC/FEC/LEC
2018/2/27 Feb. 27, 2017 Slide 13
Thank you for your kind attention
2018/2/27 Feb. 27, 2017 Slide 14
